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GB577976A - Improvements in the manufacture of silicon material for crystal contacts - Google Patents

Improvements in the manufacture of silicon material for crystal contacts

Info

Publication number
GB577976A
GB577976A GB16431/41A GB1643141A GB577976A GB 577976 A GB577976 A GB 577976A GB 16431/41 A GB16431/41 A GB 16431/41A GB 1643141 A GB1643141 A GB 1643141A GB 577976 A GB577976 A GB 577976A
Authority
GB
United Kingdom
Prior art keywords
crystal contacts
manufacture
silicon material
silicon
maintained
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16431/41A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE466804D priority Critical patent/BE466804A/xx
Priority to NL67322D priority patent/NL67322C/xx
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB16431/41A priority patent/GB577976A/en
Priority to US468577A priority patent/US2428992A/en
Priority to FR927777D priority patent/FR927777A/en
Publication of GB577976A publication Critical patent/GB577976A/en
Priority to CH263777D priority patent/CH263777A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Contacts (AREA)
  • Conductive Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

577,976. Silicon. GENERAL ELECTRIC CO., Ltd., RANSLEY, C. E., RYDE, J. W., and WILLIAMS, S. V. Dec. 19, 1941, Nos. 16431/41 and 12969/42. [Class 90] In the preparation of material for crystal contacts by melting silicon with small amount of additive material such as aluminium or beryllium and cooling slowly to form a solid product, the solid product is maintained for a considerable time at a temperature greatly above atmospheric temperature but below the melting point and is thereafter quenched rapidly. For example it may be maintained at 1,050‹C. for one hour. Specifications 577,181 and 589,592 are referred to.
GB16431/41A 1941-12-19 1941-12-19 Improvements in the manufacture of silicon material for crystal contacts Expired GB577976A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
BE466804D BE466804A (en) 1941-12-19
NL67322D NL67322C (en) 1941-12-19
GB16431/41A GB577976A (en) 1941-12-19 1941-12-19 Improvements in the manufacture of silicon material for crystal contacts
US468577A US2428992A (en) 1941-12-19 1942-12-10 Manufacture of silicon material for crystal contacts
FR927777D FR927777A (en) 1941-12-19 1946-06-11 Obtaining silicon for crystal contacts
CH263777D CH263777A (en) 1941-12-19 1946-08-21 Process for the production of a semiconducting material for crystal rectifiers.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB16431/41A GB577976A (en) 1941-12-19 1941-12-19 Improvements in the manufacture of silicon material for crystal contacts

Publications (1)

Publication Number Publication Date
GB577976A true GB577976A (en) 1946-06-11

Family

ID=10077194

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16431/41A Expired GB577976A (en) 1941-12-19 1941-12-19 Improvements in the manufacture of silicon material for crystal contacts

Country Status (6)

Country Link
US (1) US2428992A (en)
BE (1) BE466804A (en)
CH (1) CH263777A (en)
FR (1) FR927777A (en)
GB (1) GB577976A (en)
NL (1) NL67322C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3097068A (en) * 1959-05-29 1963-07-09 Union Carbide Corp Crystallization of pure silicon platelets

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE503719A (en) * 1950-06-15
NL178757B (en) * 1952-06-02 British Steel Corp METHOD AND DEVICE FOR THE CONTINUOUS PRODUCTION OF A METAL STRIP FROM METAL POWDER.
BE531626A (en) * 1953-09-04
US3010857A (en) * 1954-03-01 1961-11-28 Rca Corp Semi-conductor devices and methods of making same
US2859141A (en) * 1954-04-30 1958-11-04 Raytheon Mfg Co Method for making a semiconductor junction
DE1012696B (en) * 1954-07-06 1957-07-25 Siemens Ag Semiconductor transition between zones of different conduction types and process for producing the transition
US2957788A (en) * 1955-02-08 1960-10-25 Rca Corp Alloy junction type semiconductor devices and methods of making them
GB794128A (en) * 1955-08-04 1958-04-30 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
NL260152A (en) * 1960-01-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3097068A (en) * 1959-05-29 1963-07-09 Union Carbide Corp Crystallization of pure silicon platelets

Also Published As

Publication number Publication date
US2428992A (en) 1947-10-14
NL67322C (en)
FR927777A (en) 1947-11-10
BE466804A (en)
CH263777A (en) 1949-09-15

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