CH215504A - Elektrodensystem unsymmetrischer Leitfähigkeit. - Google Patents
Elektrodensystem unsymmetrischer Leitfähigkeit.Info
- Publication number
- CH215504A CH215504A CH215504DA CH215504A CH 215504 A CH215504 A CH 215504A CH 215504D A CH215504D A CH 215504DA CH 215504 A CH215504 A CH 215504A
- Authority
- CH
- Switzerland
- Prior art keywords
- electrode system
- asymmetrical conductivity
- asymmetrical
- conductivity
- electrode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/046—Provision of discrete insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
- H10D62/864—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEA0010138 | 1938-11-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH215504A true CH215504A (de) | 1941-06-30 |
Family
ID=6921966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH215504D CH215504A (de) | 1938-11-15 | 1939-11-04 | Elektrodensystem unsymmetrischer Leitfähigkeit. |
Country Status (4)
Country | Link |
---|---|
US (1) | US2208455A (de) |
BE (1) | BE436972A (de) |
CH (1) | CH215504A (de) |
FR (1) | FR886372A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE971775C (de) * | 1942-09-22 | 1959-03-26 | Hildegard Koepke Dr | Einrichtung zur Verstaerkung elektrischer Stroeme und Spannungen |
DE1203882B (de) * | 1961-01-27 | 1965-10-28 | Elektronik M B H | Verfahren zum Einbringen eines metallischen Gitters in eine einkristalline Zone eines Halbleiterbauelements |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH238752A (de) * | 1941-04-21 | 1945-08-15 | Philips Nv | Sperrschichtelektrodensystem mit mindestens einem in die Sperrschicht eingebetteten Gitter. |
NL85857C (de) * | 1948-02-26 | |||
US2524033A (en) * | 1948-02-26 | 1950-10-03 | Bell Telephone Labor Inc | Three-electrode circuit element utilizing semiconductive materials |
US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material |
BE492599A (de) * | 1948-12-30 | |||
DE916084C (de) * | 1949-02-11 | 1954-08-02 | Siemens Ag | Elektrisch steuerbarer Halbleitergleichrichter |
BE527524A (de) * | 1949-05-30 | |||
DE973206C (de) * | 1949-05-31 | 1959-12-24 | Siemens Ag | Regelbarer Widerstand |
US2612567A (en) * | 1949-10-04 | 1952-09-30 | Stuetzer Otmar Michael | Transconductor employing field controlled semiconductor |
DE977341C (de) * | 1950-02-24 | 1965-12-30 | Siemens Ag | Verfahren zum Herstellen einer Halbleiteranordnung |
US2561123A (en) * | 1950-04-04 | 1951-07-17 | Rca Corp | Multicontact semiconductor devices |
NL159657B (nl) * | 1950-06-28 | Bayer Ag | Werkwijze ter bereiding van een n-hydroxyimidothiocarbon- zuurester. | |
DE977455C (de) * | 1951-05-17 | 1966-06-23 | Aeg | Schaltungsanordnung mit Kristalltriode zur Ausloesung eines Relais |
US2764693A (en) * | 1951-05-25 | 1956-09-25 | Gen Electric | Process and apparatus for image production and recordation |
US2854611A (en) * | 1953-05-25 | 1958-09-30 | Rca Corp | Rectifier |
US2840496A (en) * | 1953-11-25 | 1958-06-24 | Rca Corp | Semi-conductor device |
US3952222A (en) * | 1955-08-10 | 1976-04-20 | Rca Corporation | Pickup tube target |
US3017548A (en) * | 1958-01-20 | 1962-01-16 | Bell Telephone Labor Inc | Signal translating device |
GB936181A (en) * | 1959-05-19 | 1963-09-04 | Nat Res Dev | Improvements in and relating to solid-state electrical devices |
NL264215A (de) * | 1960-05-02 | |||
NL282170A (de) * | 1961-08-17 | |||
US3250967A (en) * | 1961-12-22 | 1966-05-10 | Rca Corp | Solid state triode |
US3153154A (en) * | 1962-02-13 | 1964-10-13 | James J Murray | Grid controlled transistor device |
US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
US3509432A (en) * | 1966-06-15 | 1970-04-28 | Massachusetts Inst Technology | Field effect space-charge-limited solid state thin-film device |
US3336486A (en) * | 1966-09-06 | 1967-08-15 | Energy Conversion Devices Inc | Control system having multiple electrode current controlling device |
US3417301A (en) * | 1966-09-20 | 1968-12-17 | North American Rockwell | Composite heteroepitaxial structure |
US3569801A (en) * | 1969-06-02 | 1971-03-09 | Gen Electric | Thin film triodes and method of forming |
US3680204A (en) * | 1969-12-12 | 1972-08-01 | Massachusetts Inst Technology | Solid state device |
-
0
- BE BE436972D patent/BE436972A/xx unknown
-
1939
- 1939-11-04 CH CH215504D patent/CH215504A/de unknown
- 1939-11-13 US US304262A patent/US2208455A/en not_active Expired - Lifetime
-
1942
- 1942-10-05 FR FR886372D patent/FR886372A/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE971775C (de) * | 1942-09-22 | 1959-03-26 | Hildegard Koepke Dr | Einrichtung zur Verstaerkung elektrischer Stroeme und Spannungen |
DE1203882B (de) * | 1961-01-27 | 1965-10-28 | Elektronik M B H | Verfahren zum Einbringen eines metallischen Gitters in eine einkristalline Zone eines Halbleiterbauelements |
Also Published As
Publication number | Publication date |
---|---|
US2208455A (en) | 1940-07-16 |
FR886372A (fr) | 1943-10-13 |
BE436972A (de) |
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