CA2406214A1 - Films minces deposes et leur utilisation dans des applications de couches sacrificielles et de separation - Google Patents
Films minces deposes et leur utilisation dans des applications de couches sacrificielles et de separation Download PDFInfo
- Publication number
- CA2406214A1 CA2406214A1 CA002406214A CA2406214A CA2406214A1 CA 2406214 A1 CA2406214 A1 CA 2406214A1 CA 002406214 A CA002406214 A CA 002406214A CA 2406214 A CA2406214 A CA 2406214A CA 2406214 A1 CA2406214 A1 CA 2406214A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- volume ratio
- surface area
- high surface
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000010409 thin film Substances 0.000 title claims description 15
- 238000000926 separation method Methods 0.000 title abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 390
- 238000000034 method Methods 0.000 claims abstract description 244
- 239000000758 substrate Substances 0.000 claims abstract description 228
- 239000011800 void material Substances 0.000 claims abstract description 178
- 238000004519 manufacturing process Methods 0.000 claims abstract description 42
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 518
- 238000000151 deposition Methods 0.000 claims description 115
- 238000005530 etching Methods 0.000 claims description 102
- 229910052710 silicon Inorganic materials 0.000 claims description 99
- 239000010703 silicon Substances 0.000 claims description 98
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 97
- 238000000576 coating method Methods 0.000 claims description 84
- 239000011248 coating agent Substances 0.000 claims description 82
- 239000000126 substance Substances 0.000 claims description 52
- 239000000446 fuel Substances 0.000 claims description 48
- 239000000203 mixture Substances 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 229920000642 polymer Polymers 0.000 claims description 33
- 238000012545 processing Methods 0.000 claims description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 29
- 239000011521 glass Substances 0.000 claims description 26
- 235000012431 wafers Nutrition 0.000 claims description 24
- 150000004767 nitrides Chemical class 0.000 claims description 23
- 239000012212 insulator Substances 0.000 claims description 22
- 150000002739 metals Chemical class 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 19
- -1 dielectric Substances 0.000 claims description 16
- 238000005755 formation reaction Methods 0.000 claims description 16
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- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000011368 organic material Substances 0.000 claims description 12
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000005247 gettering Methods 0.000 claims description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 27
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 24
- 239000004033 plastic Substances 0.000 description 22
- 229920003023 plastic Polymers 0.000 description 22
- 235000012239 silicon dioxide Nutrition 0.000 description 18
- 239000011888 foil Substances 0.000 description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 16
- 238000001459 lithography Methods 0.000 description 16
- 238000001020 plasma etching Methods 0.000 description 16
- 229910021426 porous silicon Inorganic materials 0.000 description 14
- 239000000377 silicon dioxide Substances 0.000 description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000007795 chemical reaction product Substances 0.000 description 8
- 239000011148 porous material Substances 0.000 description 8
- 239000002210 silicon-based material Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000003750 conditioning effect Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000012384 transportation and delivery Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000005452 bending Methods 0.000 description 5
- 230000003197 catalytic effect Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 230000003993 interaction Effects 0.000 description 5
- 235000015097 nutrients Nutrition 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000012377 drug delivery Methods 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 238000005459 micromachining Methods 0.000 description 4
- 239000006163 transport media Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229920000557 Nafion® Polymers 0.000 description 3
- 238000013019 agitation Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000002650 laminated plastic Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000007784 solid electrolyte Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
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- 239000000806 elastomer Substances 0.000 description 2
- 238000011066 ex-situ storage Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229920005570 flexible polymer Polymers 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 210000000056 organ Anatomy 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000006213 oxygenation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- XTUSEBKMEQERQV-UHFFFAOYSA-N propan-2-ol;hydrate Chemical compound O.CC(C)O XTUSEBKMEQERQV-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- 229910017974 NH40H Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000010261 cell growth Effects 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002001 electrolyte material Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229960004592 isopropanol Drugs 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
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- 239000002609 medium Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002090 nanochannel Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000002663 nebulization Methods 0.000 description 1
- 230000021368 organ growth Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/008—Manufacture of substrate-free structures separating the processed structure from a mother substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0115—Porous silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0127—Using a carrier for applying a plurality of packaging lids to the system wafer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Micromachines (AREA)
- Weting (AREA)
- Laminated Bodies (AREA)
Abstract
Selon l'invention, on utilise des matériaux à grand rapport surface-volume pour des applications de séparation, de couche de libération et de matériau sacrificiel. L'invention porte sur la notion de matériau, les conceptions d'application et les méthodologies de fabrication. On utilise des matériaux déposés en réseau de colonnes/vides en tant qu'exemples de matériaux à grand rapport surface-volume. Plusieurs applications spécifiques montrent l'intérêt de créer des structures sur un laminé posé sur un substrat-mère et, ensuite, suivant l'approche matériau d'application de séparation, de séparer ce laminé du substrat-mère selon ledit programme de séparation. Lesdits matériaux constituent en outre un excellent utilitaire de couche de libération. Plusieurs applications montrent également comment utiliser l'approche pour former uniquement des cavités, des canaux, des entrefers et des structures connexes à l'intérieur de divers substrats ou sur ces derniers. Enfin, il est également possible et intéressant de combiner les programmes relatifs à la formation de cavités à celui concernant la séparation de laminé.
Applications Claiming Priority (19)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19754800P | 2000-04-17 | 2000-04-17 | |
| US60/197,548 | 2000-04-17 | ||
| US20193700P | 2000-05-05 | 2000-05-05 | |
| US60/201,937 | 2000-05-05 | ||
| US09/580,105 US6399177B1 (en) | 1999-06-03 | 2000-05-30 | Deposited thin film void-column network materials |
| US09/580,105 | 2000-05-30 | ||
| US20819700P | 2000-05-31 | 2000-05-31 | |
| US60/208,197 | 2000-05-31 | ||
| US21553800P | 2000-06-30 | 2000-06-30 | |
| US60/215,538 | 2000-06-30 | ||
| US23162600P | 2000-09-11 | 2000-09-11 | |
| US60/231,626 | 2000-09-11 | ||
| US23579400P | 2000-09-27 | 2000-09-27 | |
| US60/235,794 | 2000-09-27 | ||
| US09/739,940 | 2000-12-19 | ||
| US09/739,940 US6794196B2 (en) | 1999-12-20 | 2000-12-19 | Deposited thin films and their use in detection, attachment and bio-medical applications |
| US26820801P | 2001-02-12 | 2001-02-12 | |
| US60/268,208 | 2001-02-12 | ||
| PCT/US2001/012281 WO2001080286A2 (fr) | 2000-04-17 | 2001-04-17 | Films minces deposes et leur utilisation dans des applications de couches sacrificielles et de separation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2406214A1 true CA2406214A1 (fr) | 2001-10-25 |
Family
ID=27578668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002406214A Abandoned CA2406214A1 (fr) | 2000-04-17 | 2001-04-17 | Films minces deposes et leur utilisation dans des applications de couches sacrificielles et de separation |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1280617A4 (fr) |
| JP (1) | JP2004507880A (fr) |
| CN (1) | CN1427749A (fr) |
| AU (1) | AU2001261026A1 (fr) |
| CA (1) | CA2406214A1 (fr) |
| WO (1) | WO2001080286A2 (fr) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7427526B2 (en) | 1999-12-20 | 2008-09-23 | The Penn State Research Foundation | Deposited thin films and their use in separation and sacrificial layer applications |
| DE10155349C2 (de) * | 2001-11-02 | 2003-11-20 | Fraunhofer Ges Forschung | Mikrobrennstoffzellensystem sowie Verfahren zu seiner Herstellung |
| AU2003205104A1 (en) | 2002-01-11 | 2003-07-30 | The Pennsylvania State University | Method of forming a removable support with a sacrificial layers and of transferring devices |
| ATE402484T1 (de) | 2002-01-29 | 2008-08-15 | Matsushita Electric Ind Co Ltd | Halbleitervorrichtung mit brennstoffzelle und verfahren zu ihrer herstellung |
| US6921014B2 (en) * | 2002-05-07 | 2005-07-26 | General Electric Company | Method for forming a channel on the surface of a metal substrate |
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| EP3271950B1 (fr) * | 2015-03-18 | 2019-03-06 | The Regents Of The University Of Michigan | Décollement épitaxial à relaxation de contrainte par l'intermédiaire de mésas pré-structurés |
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| CN106784151B (zh) * | 2016-12-28 | 2018-08-14 | 中国电子科技集团公司第十八研究所 | 一种柔性铜铟镓硒薄膜太阳电池制备方法 |
| CN110068549B (zh) * | 2018-01-22 | 2021-09-17 | 天津大学 | 一种可忽略力光耦合效应的柔性光子器件薄膜堆叠结构 |
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| CN111229339B (zh) * | 2020-01-17 | 2021-11-30 | 上海新微技术研发中心有限公司 | 光栅波导微流体芯片的制造方法 |
| DE102020203906A1 (de) * | 2020-03-26 | 2021-09-30 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines mikromechanischen Sensors |
| CN112162015B (zh) * | 2020-09-07 | 2024-06-11 | 天地（常州）自动化股份有限公司 | 一种抗气体干扰型mems气体传感器及制备方法 |
| CN114858755B (zh) * | 2022-07-05 | 2022-10-21 | 中国航发四川燃气涡轮研究院 | 一种航空发动机涂层变频原位激光检测系统 |
| CN117153855B (zh) * | 2023-10-30 | 2024-03-01 | 合肥晶合集成电路股份有限公司 | 一种背照式图像传感器的半导体结构及其制作方法 |
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|---|---|---|---|---|
| GB2198611B (en) * | 1986-12-13 | 1990-04-04 | Spectrol Reliance Ltd | Method of forming a sealed diaphragm on a substrate |
| GB8921722D0 (en) * | 1989-09-26 | 1989-11-08 | British Telecomm | Micromechanical switch |
| US5591139A (en) * | 1994-06-06 | 1997-01-07 | The Regents Of The University Of California | IC-processed microneedles |
| KR0147211B1 (ko) * | 1994-08-30 | 1998-11-02 | 이헌조 | 도전성 마이크로 브릿지의 제조방법 |
| JP3305516B2 (ja) * | 1994-10-31 | 2002-07-22 | 株式会社東海理化電機製作所 | 静電容量式加速度センサ及びその製造方法 |
| CA2176052A1 (fr) * | 1995-06-07 | 1996-12-08 | James D. Seefeldt | Transducteur a faisceau resonnant au silicium et methode correspondante |
| US5573679A (en) * | 1995-06-19 | 1996-11-12 | Alberta Microelectronic Centre | Fabrication of a surface micromachined capacitive microphone using a dry-etch process |
| FR2736205B1 (fr) * | 1995-06-30 | 1997-09-19 | Motorola Semiconducteurs | Dispositif detecteur a semiconducteur et son procede de formation |
| EP0895276A1 (fr) * | 1997-07-31 | 1999-02-03 | STMicroelectronics S.r.l. | Procédé de fabrication de microstructures intégrées de matériau semi-conducteur en couches monocristallines |
-
2001
- 2001-04-17 EP EP01934877A patent/EP1280617A4/fr not_active Withdrawn
- 2001-04-17 AU AU2001261026A patent/AU2001261026A1/en not_active Abandoned
- 2001-04-17 CN CN 01808233 patent/CN1427749A/zh active Pending
- 2001-04-17 CA CA002406214A patent/CA2406214A1/fr not_active Abandoned
- 2001-04-17 JP JP2001577585A patent/JP2004507880A/ja active Pending
- 2001-04-17 WO PCT/US2001/012281 patent/WO2001080286A2/fr not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004507880A (ja) | 2004-03-11 |
| WO2001080286A3 (fr) | 2002-02-07 |
| WO2001080286A2 (fr) | 2001-10-25 |
| CN1427749A (zh) | 2003-07-02 |
| AU2001261026A1 (en) | 2001-10-30 |
| EP1280617A4 (fr) | 2005-08-03 |
| EP1280617A2 (fr) | 2003-02-05 |
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