CA2314478A1 - Controllable selective oxidation on vcsels - Google Patents
Controllable selective oxidation on vcsels Download PDFInfo
- Publication number
- CA2314478A1 CA2314478A1 CA 2314478 CA2314478A CA2314478A1 CA 2314478 A1 CA2314478 A1 CA 2314478A1 CA 2314478 CA2314478 CA 2314478 CA 2314478 A CA2314478 A CA 2314478A CA 2314478 A1 CA2314478 A1 CA 2314478A1
- Authority
- CA
- Canada
- Prior art keywords
- layer
- regions
- ions
- oxidation
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000003647 oxidation Effects 0.000 claims abstract description 27
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 12
- 150000002500 ions Chemical class 0.000 claims abstract description 11
- 238000002513 implantation Methods 0.000 claims description 7
- -1 gallium ions Chemical class 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000005253 cladding Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Element Separation (AREA)
Abstract
A method for controlling the oxidation of a layer containing an oxidisable material extending in a transverse plane in a vertical cavity surface emitting laser (VCSEL), involves selectively implanting ions into transversely spaced regions of the layer to change the concentration of the oxidisable material in the transversely spaced regions.
Subsequently the layer is oxidised and the degree of oxidation of the layer varies in a transverse direction between the implanted regions and non-implanted regions of the layer.
Subsequently the layer is oxidised and the degree of oxidation of the layer varies in a transverse direction between the implanted regions and non-implanted regions of the layer.
Description
CONTROLLABLE SELECTIVE OXIDATION ON VCSELs This invention relates to generally to VCSELs, vertical cavity surface emitting lasers, and more particularly to a method of controlling the selective oxidation of VCSELs.
In a VCSEL, and active region is arranged between stacks of layers of alternating refractive index forming Bragg mirrors in a vertical arrangement. Typically the Bragg layers are made of gallium arsenide/gallium aluminum arsenide (GaAs/AIGaAs).
VCSELs are advantageous for a number of reasons, such as their planar construction, the fact that they emit light perpendicular to the surface of the die, and the possibility of array fabrication. They find application, for example, as drivers in fiber optic communications.
In a complete VCSEL, cladding regions are arranged on either side of the active region.
Transition regions are located between the cladding regions and the Bragg mirrors to allow for a smooth transition from the cladding region to the Bragg stacks.
Contact regions are formed on the outer side of the Bragg stacks. The transition regions are typically formed of layers of AIAs or AIGaAs to match the Bragg layers.
A typical VCSEL of this type is described in US patent number 5,764,671, the contents of which are incorporated herein by reference.
It is desirable to selectively oxidize portions of the AIAs orAlGaAs layers in the Bragg minors or transition regions to bring about a number of advantages, such as improved carrier confinement, decreased series resistance, and the like, which improves optical gain and lowers the threshold current of the VCSEL. This technique is disclosed in US patent no. 5,359, 618, the contents of which are incorporated herein by reference.
In the prior art, the oxidation process is controlled by setting the time or water vapour flow, in practice by removing the sample from the oven or just turning off the water vapor. It is also known in the prior art that the percentage of gallium can be changed to enhance or reduce the oxidation of the bulk A1~X~Ga(x~As layer.
An object of the invention is to improve the ability to selectively oxidize portions of the Bragg layers.
According to the present invention there is provided a method for controlling the oxidation of a layer containing an oxidisable material extending in a transverse plane in a vertical cavity surface emitting laser (VCSEL), comprising the steps of selectively implanting ions into transversely spaced regions of the layer to change the concentration of the oxidisable material in the transversely spaced regions, and subsequently oxidising the layer, whereby the degree of oxidation of the layer in a transverse direction varies between the implanted regions and non-implanted regions of the layer.
For example, the implantation of Ga ions into AIAS or AlGaAs will lower the concentration of Al, which in turn has the effect of decreasing the oxidation rate significantly. By masking the layer, the oxidation rate can be selectively controlled over its transverse dimension.
Other types of ion can be used to control the oxidation in a specific layer.
For example, the implantation of Oxygen ions can be used for the selective oxidation of a layer with a high concentration of Al. In this case, the wafer must be heated after the implantation.
This technique can be applied to all VCSEL materials where a change of the metal (normally Al) concentration in a specific layer is desired.
By fabricating more reproducible components, the production yield can be made higher, giving consumers a higher quality product.
The invention also provides a vertical cavity surface emitting laser, comprising at least one oxidation layer containing an oxidised material divided into a plurality of transversely spaced regions implanted with ions, the degree of oxidation of said layer varying in a transverse direction between said implanted regions and non-implanted regions in said layer.
The invention will now be described in more detail, by way of example only, with reference to the accompanying drawings, in which the single Figure is a cross section through a VCSEL.
The VCSEL 10 is formed on a substrate 101 with a contact region on the underside. The VCSEL 10 consists of Bragg stack 109, active region 117, which may be sandwiched between cladding layers, Bragg stack 127, and contact region 132. This general structure is described in more detail in US patent no. 5,764,671, the contents of which are herein incorporated by reference.
In a VCSEL, and active region is arranged between stacks of layers of alternating refractive index forming Bragg mirrors in a vertical arrangement. Typically the Bragg layers are made of gallium arsenide/gallium aluminum arsenide (GaAs/AIGaAs).
VCSELs are advantageous for a number of reasons, such as their planar construction, the fact that they emit light perpendicular to the surface of the die, and the possibility of array fabrication. They find application, for example, as drivers in fiber optic communications.
In a complete VCSEL, cladding regions are arranged on either side of the active region.
Transition regions are located between the cladding regions and the Bragg mirrors to allow for a smooth transition from the cladding region to the Bragg stacks.
Contact regions are formed on the outer side of the Bragg stacks. The transition regions are typically formed of layers of AIAs or AIGaAs to match the Bragg layers.
A typical VCSEL of this type is described in US patent number 5,764,671, the contents of which are incorporated herein by reference.
It is desirable to selectively oxidize portions of the AIAs orAlGaAs layers in the Bragg minors or transition regions to bring about a number of advantages, such as improved carrier confinement, decreased series resistance, and the like, which improves optical gain and lowers the threshold current of the VCSEL. This technique is disclosed in US patent no. 5,359, 618, the contents of which are incorporated herein by reference.
In the prior art, the oxidation process is controlled by setting the time or water vapour flow, in practice by removing the sample from the oven or just turning off the water vapor. It is also known in the prior art that the percentage of gallium can be changed to enhance or reduce the oxidation of the bulk A1~X~Ga(x~As layer.
An object of the invention is to improve the ability to selectively oxidize portions of the Bragg layers.
According to the present invention there is provided a method for controlling the oxidation of a layer containing an oxidisable material extending in a transverse plane in a vertical cavity surface emitting laser (VCSEL), comprising the steps of selectively implanting ions into transversely spaced regions of the layer to change the concentration of the oxidisable material in the transversely spaced regions, and subsequently oxidising the layer, whereby the degree of oxidation of the layer in a transverse direction varies between the implanted regions and non-implanted regions of the layer.
For example, the implantation of Ga ions into AIAS or AlGaAs will lower the concentration of Al, which in turn has the effect of decreasing the oxidation rate significantly. By masking the layer, the oxidation rate can be selectively controlled over its transverse dimension.
Other types of ion can be used to control the oxidation in a specific layer.
For example, the implantation of Oxygen ions can be used for the selective oxidation of a layer with a high concentration of Al. In this case, the wafer must be heated after the implantation.
This technique can be applied to all VCSEL materials where a change of the metal (normally Al) concentration in a specific layer is desired.
By fabricating more reproducible components, the production yield can be made higher, giving consumers a higher quality product.
The invention also provides a vertical cavity surface emitting laser, comprising at least one oxidation layer containing an oxidised material divided into a plurality of transversely spaced regions implanted with ions, the degree of oxidation of said layer varying in a transverse direction between said implanted regions and non-implanted regions in said layer.
The invention will now be described in more detail, by way of example only, with reference to the accompanying drawings, in which the single Figure is a cross section through a VCSEL.
The VCSEL 10 is formed on a substrate 101 with a contact region on the underside. The VCSEL 10 consists of Bragg stack 109, active region 117, which may be sandwiched between cladding layers, Bragg stack 127, and contact region 132. This general structure is described in more detail in US patent no. 5,764,671, the contents of which are herein incorporated by reference.
A layer 190 intended for oxidation and consisting of AIGaAs is located above the active layer 117. The oxidation layer 190 is intended for oxidation to enhance the properties of the device as described above.
During the manufacture process, the layer 190 is masked to leave exposed regions 190a while regions 190b are covered by the mask. Gallium ions are then implanted using a conventional implantation process into the exposed regions 190a to reduce the Al concentration in the layer 109.
After removal of the mask from the oxidation layer 190, the device is placed in an oxidation oven in a conventional manner. The degree of oxidation varies across the wafer in the direction indicated by the arrow X. Where the A1 concentration is reduced, in the regions 190a, there is a significant decrease in the oxidation rate, as a result of which the degree of oxidation varies across the wafer.
By varying the size of the regions 190a and the implantation dose, the degree of oxidation can be selectively controlled across the wafer.
During the manufacture process, the layer 190 is masked to leave exposed regions 190a while regions 190b are covered by the mask. Gallium ions are then implanted using a conventional implantation process into the exposed regions 190a to reduce the Al concentration in the layer 109.
After removal of the mask from the oxidation layer 190, the device is placed in an oxidation oven in a conventional manner. The degree of oxidation varies across the wafer in the direction indicated by the arrow X. Where the A1 concentration is reduced, in the regions 190a, there is a significant decrease in the oxidation rate, as a result of which the degree of oxidation varies across the wafer.
By varying the size of the regions 190a and the implantation dose, the degree of oxidation can be selectively controlled across the wafer.
Claims (10)
1. A method for controlling the oxidation of a layer containing an oxidisable material extending in a transverse plane in a vertical cavity surface emitting laser (VCSEL), comprising the steps of selectively implanting ions into transversely spaced regions of said layer to change the concentration of the oxidisable material in said transversely spaced regions, and subsequently oxidising said layer, whereby the degree of oxidation of said layer in a transverse direction varies between the implanted regions and non-implanted regions of said layer.
2. A method as claimed in claim 1, wherein said layer is made of AlAs or AlGaAs, aluminum constituting said oxidizable material, and said ions are gallium ions.
3. A method as claimed in claim 1, wherein said layer contains Al, which forms said oxidizable material, and said ions are oxygen ions.
4. A method as claimed in claim 1, wherein said layer is heated after implantation.
5. A method as claimed in claim 1, wherein said ion implantation is carried out through a mask into said regions.
6. A method as claimed in claim 1, wherein the implantation dose for said transversely spaced regions is varied across the layer.
7. A method as claimed in claim 1, wherein the size of said transversely spaced regions varies across the layer.
8. A vertical cavity surface emitting laser, comprising at least one oxidation layer containing an oxidised material divided into a plurality of transversely spaced regions implanted with ions, the degree of oxidation of said layer varying in a transverse direction between said implanted regions and non-implanted regions in said layer.
9. A vertical cavity surface emitting laser as claimed in claim 8, wherein said layer is made of AlAs or AlGaAs, and said ions are gallium ions.
10. A vertical cavity surface emitting laser as claimed in claim 8, wherein said oxidisable material is aluminum and said implanted ions are oxygen ions.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9917321.3 | 1999-07-24 | ||
| GB9917321A GB2352871A (en) | 1999-07-24 | 1999-07-24 | Controllable selective oxidation on VCSELs |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2314478A1 true CA2314478A1 (en) | 2001-01-24 |
Family
ID=10857817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2314478 Abandoned CA2314478A1 (en) | 1999-07-24 | 2000-07-20 | Controllable selective oxidation on vcsels |
Country Status (5)
| Country | Link |
|---|---|
| CA (1) | CA2314478A1 (en) |
| DE (1) | DE10035913A1 (en) |
| FR (1) | FR2804794A1 (en) |
| GB (1) | GB2352871A (en) |
| SE (1) | SE0002735L (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2377318A (en) * | 2001-07-03 | 2003-01-08 | Mitel Semiconductor Ab | Vertical Cavity Surface Emitting Laser |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5881085A (en) * | 1996-07-25 | 1999-03-09 | Picolight, Incorporated | Lens comprising at least one oxidized layer and method for forming same |
| US5719891A (en) * | 1995-12-18 | 1998-02-17 | Picolight Incorporated | Conductive element with lateral oxidation barrier |
| US5729566A (en) * | 1996-06-07 | 1998-03-17 | Picolight Incorporated | Light emitting device having an electrical contact through a layer containing oxidized material |
| EP0844651A1 (en) * | 1996-11-26 | 1998-05-27 | Xerox Corporation | Method of controlling oxidation in multilayer semiconductor structure comprising Group III elements |
| JP3745096B2 (en) * | 1997-10-07 | 2006-02-15 | 松下電器産業株式会社 | Surface emitting semiconductor laser and manufacturing method thereof |
-
1999
- 1999-07-24 GB GB9917321A patent/GB2352871A/en not_active Withdrawn
-
2000
- 2000-07-20 CA CA 2314478 patent/CA2314478A1/en not_active Abandoned
- 2000-07-21 DE DE2000135913 patent/DE10035913A1/en not_active Withdrawn
- 2000-07-21 SE SE0002735A patent/SE0002735L/en not_active Application Discontinuation
- 2000-07-24 FR FR0009661A patent/FR2804794A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB2352871A (en) | 2001-02-07 |
| GB9917321D0 (en) | 1999-09-22 |
| FR2804794A1 (en) | 2001-08-10 |
| DE10035913A1 (en) | 2001-03-01 |
| SE0002735D0 (en) | 2000-07-21 |
| SE0002735L (en) | 2001-01-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Dead |