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CA1301955C - Mesfet a deux couches superposees - Google Patents

Mesfet a deux couches superposees

Info

Publication number
CA1301955C
CA1301955C CA000612547A CA612547A CA1301955C CA 1301955 C CA1301955 C CA 1301955C CA 000612547 A CA000612547 A CA 000612547A CA 612547 A CA612547 A CA 612547A CA 1301955 C CA1301955 C CA 1301955C
Authority
CA
Canada
Prior art keywords
active layer
delta
semiconductor device
carrier concentration
mesfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CA000612547A
Other languages
English (en)
Inventor
Masanori Nishiguchi
Naoto Okazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP24663488A external-priority patent/JP2664077B2/ja
Priority claimed from JP24663588A external-priority patent/JP2664078B2/ja
Priority claimed from JP24663288A external-priority patent/JP2664075B2/ja
Priority claimed from JP24663388A external-priority patent/JP2664076B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of CA1301955C publication Critical patent/CA1301955C/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/907—Folded bit line dram configuration

Landscapes

  • Junction Field-Effect Transistors (AREA)
CA000612547A 1988-09-30 1989-09-22 Mesfet a deux couches superposees Expired - Lifetime CA1301955C (fr)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP24663488A JP2664077B2 (ja) 1988-09-30 1988-09-30 半導体装置
JP24663588A JP2664078B2 (ja) 1988-09-30 1988-09-30 半導体装置
JP246635/1988 1988-09-30
JP246632/1988 1988-09-30
JP246633/1988 1988-09-30
JP246634/1988 1988-09-30
JP24663288A JP2664075B2 (ja) 1988-09-30 1988-09-30 半導体装置
JP24663388A JP2664076B2 (ja) 1988-09-30 1988-09-30 半導体装置

Publications (1)

Publication Number Publication Date
CA1301955C true CA1301955C (fr) 1992-05-26

Family

ID=27478041

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000612547A Expired - Lifetime CA1301955C (fr) 1988-09-30 1989-09-22 Mesfet a deux couches superposees

Country Status (6)

Country Link
US (1) US5027170A (fr)
EP (1) EP0366930B1 (fr)
KR (1) KR920009753B1 (fr)
AU (1) AU638940B2 (fr)
CA (1) CA1301955C (fr)
DE (1) DE68919809T2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1300763C (fr) * 1988-09-29 1992-05-12 Masanori Nishiguchi Mesfet protege contre les rayonnements
JPH0547798A (ja) * 1991-01-31 1993-02-26 Texas Instr Inc <Ti> 抵抗性ＡｌＧａＡｓを有するＧａＡｓ ＦＥＴ
AU643780B2 (en) * 1991-04-29 1993-11-25 Sumitomo Electric Industries, Ltd. A semiconductor device
US5250826A (en) * 1992-09-23 1993-10-05 Rockwell International Corporation Planar HBT-FET Device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4193182A (en) * 1977-02-07 1980-03-18 Hughes Aircraft Company Passivated V-gate GaAs field-effect transistor and fabrication process therefor
JPS5691477A (en) * 1979-12-25 1981-07-24 Nec Corp Semiconductor
US4338616A (en) * 1980-02-19 1982-07-06 Xerox Corporation Self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain
JPS6085567A (ja) * 1983-10-17 1985-05-15 Mitsubishi Electric Corp 電界効果トランジスタ
US4688062A (en) * 1984-06-29 1987-08-18 Raytheon Company Semiconductor structure and method of manufacture
JPS6199380A (ja) * 1984-10-22 1986-05-17 Fujitsu Ltd 半導体装置およびその製造方法
JPH01132170A (ja) * 1987-11-18 1989-05-24 Toshiba Corp 電界効果トランジスタ
CA1300763C (fr) * 1988-09-29 1992-05-12 Masanori Nishiguchi Mesfet protege contre les rayonnements

Also Published As

Publication number Publication date
US5027170A (en) 1991-06-25
AU4179289A (en) 1990-04-05
EP0366930A3 (en) 1990-06-13
EP0366930A2 (fr) 1990-05-09
KR900005607A (ko) 1990-04-14
AU638940B2 (en) 1993-07-15
KR920009753B1 (ko) 1992-10-22
DE68919809T2 (de) 1995-08-03
DE68919809D1 (de) 1995-01-19
EP0366930B1 (fr) 1994-12-07

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JP2664073B2 (ja) 半導体装置
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Legal Events

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