CA1077607A - Dispositif electroluminescent a semiconducteur et methode de fabrication - Google Patents
Dispositif electroluminescent a semiconducteur et methode de fabricationInfo
- Publication number
- CA1077607A CA1077607A CA255,114A CA255114A CA1077607A CA 1077607 A CA1077607 A CA 1077607A CA 255114 A CA255114 A CA 255114A CA 1077607 A CA1077607 A CA 1077607A
- Authority
- CA
- Canada
- Prior art keywords
- region
- regions
- layer
- substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 23
- 238000002955 isolation Methods 0.000 claims abstract description 22
- 230000012010 growth Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 239000002184 metal Substances 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract description 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 229910052682 stishovite Inorganic materials 0.000 abstract description 7
- 229910052905 tridymite Inorganic materials 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000002674 ointment Substances 0.000 abstract 1
- 239000000969 carrier Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 1
- 239000005630 Diquat Substances 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10H20/8162—Current-blocking structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50075902A JPS5811111B2 (ja) | 1975-06-20 | 1975-06-20 | 半導体レ−ザ装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1077607A true CA1077607A (fr) | 1980-05-13 |
Family
ID=13589720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA255,114A Expired CA1077607A (fr) | 1975-06-20 | 1976-06-17 | Dispositif electroluminescent a semiconducteur et methode de fabrication |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5811111B2 (fr) |
| CA (1) | CA1077607A (fr) |
| DE (1) | DE2627355C3 (fr) |
| FR (1) | FR2316747A1 (fr) |
| GB (1) | GB1543220A (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4194933A (en) * | 1977-05-06 | 1980-03-25 | Bell Telephone Laboratories, Incorporated | Method for fabricating junction lasers having lateral current confinement |
| US4169997A (en) * | 1977-05-06 | 1979-10-02 | Bell Telephone Laboratories, Incorporated | Lateral current confinement in junction lasers |
| DE3065856D1 (en) * | 1979-02-13 | 1984-01-19 | Fujitsu Ltd | A semiconductor light emitting device |
| JPS57136385A (en) * | 1981-02-16 | 1982-08-23 | Sanyo Electric Co Ltd | Manufacture of semiconductor laser |
| DE3105786A1 (de) * | 1981-02-17 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | Herstellung von lumineszenz- oder laserdioden mit intern begrenzter leuchtflaeche |
| JPS57160186A (en) * | 1981-03-27 | 1982-10-02 | Nec Corp | Manufacture of semiconductor laser |
| JPS60130880A (ja) * | 1983-12-19 | 1985-07-12 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| JPS63248168A (ja) * | 1987-04-02 | 1988-10-14 | Nec Corp | ヘテロ接合バイポ−ラトランジスタおよびその製造方法 |
| JPS63248167A (ja) * | 1987-04-02 | 1988-10-14 | Nec Corp | ヘテロ接合バイポ−ラトランジスタの製造方法 |
| DE10008584A1 (de) | 2000-02-24 | 2001-09-13 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement für die Emission elektromagnetischer Strahlung und Verfahren zu dessen Herstellung |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4946878A (fr) * | 1972-09-08 | 1974-05-07 |
-
1975
- 1975-06-20 JP JP50075902A patent/JPS5811111B2/ja not_active Expired
-
1976
- 1976-06-11 GB GB24342/76A patent/GB1543220A/en not_active Expired
- 1976-06-17 CA CA255,114A patent/CA1077607A/fr not_active Expired
- 1976-06-18 DE DE2627355A patent/DE2627355C3/de not_active Expired
- 1976-06-18 FR FR7618712A patent/FR2316747A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2627355C3 (de) | 1979-03-22 |
| GB1543220A (en) | 1979-03-28 |
| FR2316747B1 (fr) | 1980-08-14 |
| DE2627355A1 (de) | 1976-12-23 |
| DE2627355B2 (de) | 1978-07-20 |
| JPS5811111B2 (ja) | 1983-03-01 |
| JPS51151090A (en) | 1976-12-25 |
| FR2316747A1 (fr) | 1977-01-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry | ||
| MKEX | Expiry |
Effective date: 19970513 |