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BR8008860A - Dispositivos semicondutores controlados por regioes de depleccao - Google Patents

Dispositivos semicondutores controlados por regioes de depleccao

Info

Publication number
BR8008860A
BR8008860A BR8008860A BR8008860A BR8008860A BR 8008860 A BR8008860 A BR 8008860A BR 8008860 A BR8008860 A BR 8008860A BR 8008860 A BR8008860 A BR 8008860A BR 8008860 A BR8008860 A BR 8008860A
Authority
BR
Brazil
Prior art keywords
deplection
regions
semiconductor devices
devices controlled
controlled
Prior art date
Application number
BR8008860A
Other languages
English (en)
Inventor
W Cardwell Jr
Original Assignee
W Cardwell Jr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by W Cardwell Jr filed Critical W Cardwell Jr
Publication of BR8008860A publication Critical patent/BR8008860A/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/088—J-Fet, i.e. junction field effect transistor
BR8008860A 1979-10-09 1980-09-24 Dispositivos semicondutores controlados por regioes de depleccao BR8008860A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/083,092 US4698653A (en) 1979-10-09 1979-10-09 Semiconductor devices controlled by depletion regions
PCT/US1980/001234 WO1981001073A1 (en) 1979-10-09 1980-09-24 Semiconductor devices controlled by depletion regions

Publications (1)

Publication Number Publication Date
BR8008860A true BR8008860A (pt) 1981-08-25

Family

ID=22176123

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8008860A BR8008860A (pt) 1979-10-09 1980-09-24 Dispositivos semicondutores controlados por regioes de depleccao

Country Status (8)

Country Link
US (1) US4698653A (pt)
EP (1) EP0036887B1 (pt)
JP (1) JPH0468774B2 (pt)
BR (1) BR8008860A (pt)
CA (1) CA1153479A (pt)
DE (1) DE3071863D1 (pt)
IT (1) IT1128701B (pt)
WO (1) WO1981001073A1 (pt)

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US6818513B2 (en) * 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6713813B2 (en) 2001-01-30 2004-03-30 Fairchild Semiconductor Corporation Field effect transistor having a lateral depletion structure
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US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
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US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
JP2008536316A (ja) 2005-04-06 2008-09-04 フェアチャイルド・セミコンダクター・コーポレーション トレンチゲート電界効果トランジスタおよびその形成方法
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
US7592841B2 (en) * 2006-05-11 2009-09-22 Dsm Solutions, Inc. Circuit configurations having four terminal JFET devices
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7646233B2 (en) * 2006-05-11 2010-01-12 Dsm Solutions, Inc. Level shifting circuit having junction field effect transistors
US7319256B1 (en) * 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
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US20080099796A1 (en) * 2006-11-01 2008-05-01 Vora Madhukar B Device with patterned semiconductor electrode structure and method of manufacture
US20080237657A1 (en) * 2007-03-26 2008-10-02 Dsm Solution, Inc. Signaling circuit and method for integrated circuit devices and systems
US20080265936A1 (en) * 2007-04-27 2008-10-30 Dsm Solutions, Inc. Integrated circuit switching device, structure and method of manufacture
US7692220B2 (en) * 2007-05-01 2010-04-06 Suvolta, Inc. Semiconductor device storage cell structure, method of operation, and method of manufacture
US7727821B2 (en) 2007-05-01 2010-06-01 Suvolta, Inc. Image sensing cell, device, method of operation, and method of manufacture
US7629812B2 (en) * 2007-08-03 2009-12-08 Dsm Solutions, Inc. Switching circuits and methods for programmable logic devices
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US20090168508A1 (en) * 2007-12-31 2009-07-02 Dsm Solutions, Inc. Static random access memory having cells with junction field effect and bipolar junction transistors
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US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
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Also Published As

Publication number Publication date
JPH0468774B2 (pt) 1992-11-04
EP0036887A4 (en) 1984-04-27
WO1981001073A1 (en) 1981-04-16
IT8049846A0 (it) 1980-10-08
EP0036887B1 (en) 1986-12-10
IT1128701B (it) 1986-06-04
CA1153479A (en) 1983-09-06
EP0036887A1 (en) 1981-10-07
DE3071863D1 (en) 1987-01-22
JPS56501306A (pt) 1981-09-10
US4698653A (en) 1987-10-06

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Legal Events

Date Code Title Description
MK Patent expired

Effective date: 19950924