DK525979A - Halvleder-ladnngsoverfoeringsanordning - Google Patents
Halvleder-ladnngsoverfoeringsanordningInfo
- Publication number
- DK525979A DK525979A DK525979A DK525979A DK525979A DK 525979 A DK525979 A DK 525979A DK 525979 A DK525979 A DK 525979A DK 525979 A DK525979 A DK 525979A DK 525979 A DK525979 A DK 525979A
- Authority
- DK
- Denmark
- Prior art keywords
- ladnngsoverfoeringsanordning
- semiconductor
- semiconductor ladnngsoverfoeringsanordning
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
- H10D44/476—Three-phase CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
- H10D44/466—Three-phase CCD
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7849053 | 1978-12-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
DK525979A true DK525979A (da) | 1980-06-20 |
Family
ID=10501808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK525979A DK525979A (da) | 1978-12-19 | 1979-12-11 | Halvleder-ladnngsoverfoeringsanordning |
Country Status (7)
Country | Link |
---|---|
US (1) | US4262297A (da) |
EP (1) | EP0012561B1 (da) |
JP (1) | JPS5586158A (da) |
CA (1) | CA1133134A (da) |
DE (1) | DE2963991D1 (da) |
DK (1) | DK525979A (da) |
GB (1) | GB2038089B (da) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8303268A (nl) * | 1983-09-23 | 1985-04-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd door toepassing van een dergelijke werkwijze. |
US4688066A (en) * | 1984-08-31 | 1987-08-18 | Rca Corporation | Opposite direction multiple-phase clocking in adjacent CCD shift registers |
NL8502478A (nl) * | 1985-09-11 | 1987-04-01 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
DE3715675A1 (de) * | 1987-05-11 | 1988-12-01 | Messerschmitt Boelkow Blohm | Halbleiterelement |
JP2565213B2 (ja) * | 1989-10-27 | 1996-12-18 | ソニー株式会社 | 読み出し専用メモリ装置 |
JP3780003B2 (ja) * | 1993-06-15 | 2006-05-31 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
US5646427A (en) * | 1995-08-23 | 1997-07-08 | Dalsa, Inc. | Integrated circuit defect tolerant architecture |
US6376868B1 (en) | 1999-06-15 | 2002-04-23 | Micron Technology, Inc. | Multi-layered gate for a CMOS imager |
US6654057B1 (en) | 1999-06-17 | 2003-11-25 | Micron Technology, Inc. | Active pixel sensor with a diagonal active area |
US6326652B1 (en) | 1999-06-18 | 2001-12-04 | Micron Technology, Inc., | CMOS imager with a self-aligned buried contact |
US6414342B1 (en) * | 1999-06-18 | 2002-07-02 | Micron Technology Inc. | Photogate with improved short wavelength response for a CMOS imager |
US6204524B1 (en) | 1999-07-14 | 2001-03-20 | Micron Technology, Inc. | CMOS imager with storage capacitor |
JP2001308313A (ja) * | 2000-04-21 | 2001-11-02 | Nec Corp | 電荷転送装置及びそれを用いた固体撮像装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4163239A (en) * | 1971-12-30 | 1979-07-31 | Texas Instruments Incorporated | Second level phase lines for CCD line imager |
US3946421A (en) * | 1974-06-28 | 1976-03-23 | Texas Instruments Incorporated | Multi phase double level metal charge coupled device |
US3943543A (en) * | 1974-07-26 | 1976-03-09 | Texas Instruments Incorporated | Three level electrode configuration for three phase charge coupled device |
US3961352A (en) * | 1975-05-30 | 1976-06-01 | Northern Electric Company Limited | Multi-ripple charge coupled device |
-
1979
- 1979-11-30 US US06/098,851 patent/US4262297A/en not_active Expired - Lifetime
- 1979-12-05 DE DE7979302795T patent/DE2963991D1/de not_active Expired
- 1979-12-05 EP EP79302795A patent/EP0012561B1/en not_active Expired
- 1979-12-05 GB GB7942007A patent/GB2038089B/en not_active Expired
- 1979-12-11 DK DK525979A patent/DK525979A/da not_active Application Discontinuation
- 1979-12-18 JP JP16466479A patent/JPS5586158A/ja active Pending
- 1979-12-19 CA CA342,284A patent/CA1133134A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0012561B1 (en) | 1982-11-03 |
US4262297A (en) | 1981-04-14 |
CA1133134A (en) | 1982-10-05 |
GB2038089A (en) | 1980-07-16 |
EP0012561A1 (en) | 1980-06-25 |
JPS5586158A (en) | 1980-06-28 |
DE2963991D1 (en) | 1982-12-09 |
GB2038089B (en) | 1983-04-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AHS | Application shelved for other reasons than non-payment |