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BE609586A - Matière semi-conductrice, et son procédé de fabrication - Google Patents

Matière semi-conductrice, et son procédé de fabrication

Info

Publication number
BE609586A
BE609586A BE609586A BE609586A BE609586A BE 609586 A BE609586 A BE 609586A BE 609586 A BE609586 A BE 609586A BE 609586 A BE609586 A BE 609586A BE 609586 A BE609586 A BE 609586A
Authority
BE
Belgium
Prior art keywords
manufacturing process
semiconductor material
semiconductor
manufacturing
Prior art date
Application number
BE609586A
Other languages
English (en)
Inventor
George Krsek
Walter Charles Benzing
Original Assignee
Merck & Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck & Co Inc filed Critical Merck & Co Inc
Publication of BE609586A publication Critical patent/BE609586A/fr

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02576N-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02579P-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/115Orientation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
BE609586A 1960-10-26 1961-10-25 Matière semi-conductrice, et son procédé de fabrication BE609586A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6510060A 1960-10-26 1960-10-26
US86239A US3131098A (en) 1960-10-26 1961-01-31 Epitaxial deposition on a substrate placed in a socket of the carrier member

Publications (1)

Publication Number Publication Date
BE609586A true BE609586A (fr) 1962-04-25

Family

ID=26745202

Family Applications (1)

Application Number Title Priority Date Filing Date
BE609586A BE609586A (fr) 1960-10-26 1961-10-25 Matière semi-conductrice, et son procédé de fabrication

Country Status (5)

Country Link
US (1) US3131098A (fr)
BE (1) BE609586A (fr)
CH (1) CH389105A (fr)
GB (1) GB991370A (fr)
SE (1) SE315337B (fr)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL252729A (fr) * 1959-06-18
DE1419717A1 (de) * 1960-12-06 1968-10-17 Siemens Ag Monokristalliner Halbleiterkoerper und Verfahren zur Herstellung desselben
NL273009A (fr) * 1960-12-29
US3220380A (en) * 1961-08-21 1965-11-30 Merck & Co Inc Deposition chamber including heater element enveloped by a quartz workholder
US3297922A (en) * 1961-11-02 1967-01-10 Microwave Ass Semiconductor point contact devices
DE1464305B2 (de) * 1962-02-10 1970-09-10 Nippon Electric Co. Ltd., Tokio Verfahren zum Herstellen von Halbleiterbauelementen sowie nach diesem Verfahren hergestellte Bauelemente
DE1202616B (de) * 1962-02-23 1965-10-07 Siemens Ag Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht
US3319138A (en) * 1962-11-27 1967-05-09 Texas Instruments Inc Fast switching high current avalanche transistor
US3257626A (en) * 1962-12-31 1966-06-21 Ibm Semiconductor laser structures
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
BE650116A (fr) * 1963-07-05 1900-01-01
US3304908A (en) * 1963-08-14 1967-02-21 Merck & Co Inc Epitaxial reactor including mask-work support
GB1051562A (fr) * 1963-11-26
US3343518A (en) * 1964-09-30 1967-09-26 Hayes Inc C I High temperature furnace
NL6513397A (fr) * 1964-11-02 1966-05-03 Siemens Ag
US3383571A (en) * 1965-07-19 1968-05-14 Rca Corp High-frequency power transistor with improved reverse-bias second breakdown characteristics
US3391270A (en) * 1965-07-27 1968-07-02 Monsanto Co Electric resistance heaters
US3491720A (en) * 1965-07-29 1970-01-27 Monsanto Co Epitaxial deposition reactor
FR1462288A (fr) * 1965-09-24 1966-04-15 Radiotechnique Dispositif de détection pour particules
US3423651A (en) * 1966-01-13 1969-01-21 Raytheon Co Microcircuit with complementary dielectrically isolated mesa-type active elements
US3454434A (en) * 1966-05-09 1969-07-08 Motorola Inc Multilayer semiconductor device
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3462311A (en) * 1966-05-20 1969-08-19 Globe Union Inc Semiconductor device having improved resistance to radiation damage
US3384049A (en) * 1966-10-27 1968-05-21 Emil R. Capita Vapor deposition apparatus including centrifugal force substrate-holding means
US3659552A (en) * 1966-12-15 1972-05-02 Western Electric Co Vapor deposition apparatus
US3399651A (en) * 1967-05-26 1968-09-03 Philco Ford Corp Susceptor for growing polycrystalline silicon on wafers of monocrystalline silicon
US3823685A (en) * 1971-08-05 1974-07-16 Ncr Co Processing apparatus
JP5284108B2 (ja) * 2006-02-10 2013-09-11 インターモレキュラー, インコーポレイテッド 材料、単位工程および工程順序のコンビナトリアル変化のための方法およびシステム
US8772772B2 (en) * 2006-05-18 2014-07-08 Intermolecular, Inc. System and method for increasing productivity of combinatorial screening
US8011317B2 (en) * 2006-12-29 2011-09-06 Intermolecular, Inc. Advanced mixing system for integrated tool having site-isolated reactors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2650564A (en) * 1949-12-02 1953-09-01 Ohio Commw Eng Co Dynamic pyrolytic plating apparatus
BE509317A (fr) * 1951-03-07 1900-01-01
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US2785997A (en) * 1954-03-18 1957-03-19 Ohio Commw Eng Co Gas plating process
BE544843A (fr) * 1955-02-25
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten
US2989941A (en) * 1959-02-02 1961-06-27 Hoffman Electronics Corp Closed diffusion apparatus
NL259447A (fr) * 1959-12-31

Also Published As

Publication number Publication date
SE315337B (fr) 1969-09-29
CH389105A (fr) 1965-03-15
GB991370A (en) 1965-05-05
US3131098A (en) 1964-04-28

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