BE609586A - Matière semi-conductrice, et son procédé de fabrication - Google Patents
Matière semi-conductrice, et son procédé de fabricationInfo
- Publication number
- BE609586A BE609586A BE609586A BE609586A BE609586A BE 609586 A BE609586 A BE 609586A BE 609586 A BE609586 A BE 609586A BE 609586 A BE609586 A BE 609586A BE 609586 A BE609586 A BE 609586A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing process
- semiconductor material
- semiconductor
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US6510060A | 1960-10-26 | 1960-10-26 | |
US86239A US3131098A (en) | 1960-10-26 | 1961-01-31 | Epitaxial deposition on a substrate placed in a socket of the carrier member |
Publications (1)
Publication Number | Publication Date |
---|---|
BE609586A true BE609586A (fr) | 1962-04-25 |
Family
ID=26745202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE609586A BE609586A (fr) | 1960-10-26 | 1961-10-25 | Matière semi-conductrice, et son procédé de fabrication |
Country Status (5)
Country | Link |
---|---|
US (1) | US3131098A (fr) |
BE (1) | BE609586A (fr) |
CH (1) | CH389105A (fr) |
GB (1) | GB991370A (fr) |
SE (1) | SE315337B (fr) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL252729A (fr) * | 1959-06-18 | |||
DE1419717A1 (de) * | 1960-12-06 | 1968-10-17 | Siemens Ag | Monokristalliner Halbleiterkoerper und Verfahren zur Herstellung desselben |
NL273009A (fr) * | 1960-12-29 | |||
US3220380A (en) * | 1961-08-21 | 1965-11-30 | Merck & Co Inc | Deposition chamber including heater element enveloped by a quartz workholder |
US3297922A (en) * | 1961-11-02 | 1967-01-10 | Microwave Ass | Semiconductor point contact devices |
DE1464305B2 (de) * | 1962-02-10 | 1970-09-10 | Nippon Electric Co. Ltd., Tokio | Verfahren zum Herstellen von Halbleiterbauelementen sowie nach diesem Verfahren hergestellte Bauelemente |
DE1202616B (de) * | 1962-02-23 | 1965-10-07 | Siemens Ag | Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht |
US3319138A (en) * | 1962-11-27 | 1967-05-09 | Texas Instruments Inc | Fast switching high current avalanche transistor |
US3257626A (en) * | 1962-12-31 | 1966-06-21 | Ibm | Semiconductor laser structures |
US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
BE650116A (fr) * | 1963-07-05 | 1900-01-01 | ||
US3304908A (en) * | 1963-08-14 | 1967-02-21 | Merck & Co Inc | Epitaxial reactor including mask-work support |
GB1051562A (fr) * | 1963-11-26 | |||
US3343518A (en) * | 1964-09-30 | 1967-09-26 | Hayes Inc C I | High temperature furnace |
NL6513397A (fr) * | 1964-11-02 | 1966-05-03 | Siemens Ag | |
US3383571A (en) * | 1965-07-19 | 1968-05-14 | Rca Corp | High-frequency power transistor with improved reverse-bias second breakdown characteristics |
US3391270A (en) * | 1965-07-27 | 1968-07-02 | Monsanto Co | Electric resistance heaters |
US3491720A (en) * | 1965-07-29 | 1970-01-27 | Monsanto Co | Epitaxial deposition reactor |
FR1462288A (fr) * | 1965-09-24 | 1966-04-15 | Radiotechnique | Dispositif de détection pour particules |
US3423651A (en) * | 1966-01-13 | 1969-01-21 | Raytheon Co | Microcircuit with complementary dielectrically isolated mesa-type active elements |
US3454434A (en) * | 1966-05-09 | 1969-07-08 | Motorola Inc | Multilayer semiconductor device |
US3460510A (en) * | 1966-05-12 | 1969-08-12 | Dow Corning | Large volume semiconductor coating reactor |
US3462311A (en) * | 1966-05-20 | 1969-08-19 | Globe Union Inc | Semiconductor device having improved resistance to radiation damage |
US3384049A (en) * | 1966-10-27 | 1968-05-21 | Emil R. Capita | Vapor deposition apparatus including centrifugal force substrate-holding means |
US3659552A (en) * | 1966-12-15 | 1972-05-02 | Western Electric Co | Vapor deposition apparatus |
US3399651A (en) * | 1967-05-26 | 1968-09-03 | Philco Ford Corp | Susceptor for growing polycrystalline silicon on wafers of monocrystalline silicon |
US3823685A (en) * | 1971-08-05 | 1974-07-16 | Ncr Co | Processing apparatus |
JP5284108B2 (ja) * | 2006-02-10 | 2013-09-11 | インターモレキュラー, インコーポレイテッド | 材料、単位工程および工程順序のコンビナトリアル変化のための方法およびシステム |
US8772772B2 (en) * | 2006-05-18 | 2014-07-08 | Intermolecular, Inc. | System and method for increasing productivity of combinatorial screening |
US8011317B2 (en) * | 2006-12-29 | 2011-09-06 | Intermolecular, Inc. | Advanced mixing system for integrated tool having site-isolated reactors |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2650564A (en) * | 1949-12-02 | 1953-09-01 | Ohio Commw Eng Co | Dynamic pyrolytic plating apparatus |
BE509317A (fr) * | 1951-03-07 | 1900-01-01 | ||
US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
US2785997A (en) * | 1954-03-18 | 1957-03-19 | Ohio Commw Eng Co | Gas plating process |
BE544843A (fr) * | 1955-02-25 | |||
US2895858A (en) * | 1955-06-21 | 1959-07-21 | Hughes Aircraft Co | Method of producing semiconductor crystal bodies |
DE1029941B (de) * | 1955-07-13 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung von einkristallinen Halbleiterschichten |
US2989941A (en) * | 1959-02-02 | 1961-06-27 | Hoffman Electronics Corp | Closed diffusion apparatus |
NL259447A (fr) * | 1959-12-31 |
-
1961
- 1961-01-31 US US86239A patent/US3131098A/en not_active Expired - Lifetime
- 1961-10-13 GB GB36860/61A patent/GB991370A/en not_active Expired
- 1961-10-25 BE BE609586A patent/BE609586A/fr unknown
- 1961-10-25 SE SE10613/61A patent/SE315337B/xx unknown
- 1961-10-26 CH CH1242161A patent/CH389105A/fr unknown
Also Published As
Publication number | Publication date |
---|---|
SE315337B (fr) | 1969-09-29 |
CH389105A (fr) | 1965-03-15 |
GB991370A (en) | 1965-05-05 |
US3131098A (en) | 1964-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BE609586A (fr) | Matière semi-conductrice, et son procédé de fabrication | |
FR1278336A (fr) | Chausson et son procédé de fabrication | |
BE603406A (fr) | Emballage et son procédé de fabrication. | |
BE610917A (fr) | Procédé de fabrication de matière semi-conductrice | |
CH392701A (fr) | Diode à semi-conducteur et son procédé de fabrication | |
FR1303419A (fr) | Catalyseur perfectionné et son procédé de fabrication | |
BE596277A (fr) | Matière réfractaire extra-alumineuse et son procédé de fabrication | |
BE573518A (fr) | Matière de rembourrage et son procédé de fabrication. | |
FR1289687A (fr) | Matière semi-conductrice et son procédé de fabrication | |
BE608816A (fr) | Récipient souple et son procédé de fabrication. | |
FR1308788A (fr) | Matière semi-conductrice et son procédé de fabrication | |
FR1450427A (fr) | Composition de matière explosive et son procédé de fabrication | |
FR1271522A (fr) | Chaussure fantaisie, et son procédé de fabrication | |
FR80129E (fr) | Récipient souple et son procédé de fabrication | |
FR1304315A (fr) | Matière semi-conductrice, son procédé de fabrication et son utilisation dans les éléments semi-conducteurs | |
FR1153302A (fr) | Matière céramique et son procédé de fabrication | |
FR1175871A (fr) | Nouvelle matière céramique, son procédé de fabrication et ses applications | |
OA00825A (fr) | Elément électroluminescent et son procédé de fabrication. | |
BE614102A (fr) | Semi-conducteur et son procédé de fabrication. | |
FR1321789A (fr) | Matériau électrophotographique, son procédé de fabrication et son application | |
FR1401951A (fr) | Matière filtrante et son procédé de fabrication | |
FR1424947A (fr) | Composition de moulage thermoplastique et son procédé de fabrication | |
FR1315520A (fr) | Semi-conducteur et son procédé de fabrication | |
FR1334898A (fr) | Châssis-mère de moulage et son procédé de fabrication | |
FR1311142A (fr) | Chaussure et son procédé de fabrication |