BE530566A - - Google Patents
Info
- Publication number
- BE530566A BE530566A BE530566DA BE530566A BE 530566 A BE530566 A BE 530566A BE 530566D A BE530566D A BE 530566DA BE 530566 A BE530566 A BE 530566A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1250/54A GB753140A (en) | 1953-07-22 | 1953-07-22 | Improvements in or relating to electric semi-conducting devices |
GB20395/53A GB753133A (en) | 1953-07-22 | 1953-07-22 | Improvements in or relating to electric semi-conducting devices |
Publications (1)
Publication Number | Publication Date |
---|---|
BE530566A true BE530566A (de) |
Family
ID=26236590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE530566D BE530566A (de) | 1953-07-22 |
Country Status (4)
Country | Link |
---|---|
BE (1) | BE530566A (de) |
CH (1) | CH331017A (de) |
DE (1) | DE1024640B (de) |
GB (1) | GB753140A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1087704B (de) * | 1956-04-03 | 1960-08-25 | Philips Nv | Verfahren zur Herstellung von Halbleiteranordnungen mit wenigstens einem p-n-UEbergang |
DE1207012B (de) * | 1955-12-24 | 1965-12-16 | Telefunken Patent | Halbleiterbauelement mit einer injizierenden und einer sammelnden Elektrode |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2964435A (en) * | 1957-03-27 | 1960-12-13 | Mc Graw Edison Co | Semiconductor devices and their manufacture |
DE1243278B (de) * | 1958-03-27 | 1967-06-29 | Siemens Ag | npn- bzw. pnp-Leistungstransistor aus Silizium |
US3041226A (en) * | 1958-04-02 | 1962-06-26 | Hughes Aircraft Co | Method of preparing semiconductor crystals |
NL238556A (de) * | 1958-04-24 | |||
NL239076A (de) * | 1958-06-09 | 1900-01-01 | ||
NL105824C (de) * | 1958-06-26 | |||
FR1230933A (de) * | 1958-07-26 | 1960-09-21 | ||
DE1105522B (de) * | 1958-11-12 | 1961-04-27 | Licentia Gmbh | Transistor mit einem scheibenfoermigen Halbleiterkoerper |
US3225416A (en) * | 1958-11-20 | 1965-12-28 | Int Rectifier Corp | Method of making a transistor containing a multiplicity of depressions |
NL246742A (de) * | 1958-12-24 | |||
NL247735A (de) * | 1959-01-28 | |||
US2937114A (en) * | 1959-05-29 | 1960-05-17 | Shockley Transistor Corp | Semiconductive device and method |
US3108914A (en) * | 1959-06-30 | 1963-10-29 | Fairchild Camera Instr Co | Transistor manufacturing process |
US3041214A (en) * | 1959-09-25 | 1962-06-26 | Clevite Corp | Method of forming junction semiconductive devices having thin layers |
DE1133038B (de) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps |
DE1166379B (de) * | 1961-05-12 | 1964-03-26 | Raytheon Co | Hochfrequenztransistor und Verfahren zu seinem Herstellen |
DE1208409B (de) * | 1961-05-19 | 1966-01-05 | Int Standard Electric Corp | Elektrisches Halbleiterbauelement mit pn-UEbergang und Verfahren zum Herstellen |
DE1237694B (de) * | 1961-08-10 | 1967-03-30 | Siemens Ag | Verfahren zum Legieren von elektrischen Halbleiterbauelementen |
DE1225304B (de) * | 1961-11-16 | 1966-09-22 | Telefunken Patent | Diffusionsverfahren zum Herstellen eines Halbleiterbauelementes |
DE1280421B (de) * | 1965-08-23 | 1968-10-17 | Halbleiterwerk Frankfurt Oder | Verfahren zum Verringern von Bahnwiderstaenden in Halbleiteranordnungen |
CH426020A (de) * | 1965-09-08 | 1966-12-15 | Bbc Brown Boveri & Cie | Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement |
DE1281037B (de) * | 1965-09-18 | 1968-10-24 | Telefunken Patent | Verfahren zum Herstellen eines Transistors |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
-
0
- BE BE530566D patent/BE530566A/xx unknown
-
1953
- 1953-07-22 GB GB1250/54A patent/GB753140A/en not_active Expired
-
1954
- 1954-07-21 DE DEI8930A patent/DE1024640B/de active Pending
- 1954-07-22 CH CH331017D patent/CH331017A/de unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1207012B (de) * | 1955-12-24 | 1965-12-16 | Telefunken Patent | Halbleiterbauelement mit einer injizierenden und einer sammelnden Elektrode |
DE1087704B (de) * | 1956-04-03 | 1960-08-25 | Philips Nv | Verfahren zur Herstellung von Halbleiteranordnungen mit wenigstens einem p-n-UEbergang |
Also Published As
Publication number | Publication date |
---|---|
CH331017A (de) | 1958-06-30 |
DE1024640B (de) | 1958-02-20 |
GB753140A (en) | 1956-07-18 |