AU2003284565A1 - Ferroelectric memory array - Google Patents

Ferroelectric memory array

Info

Publication number: AU2003284565A1
Authority: AU; Australia
Prior art keywords: memory array; ferroelectric memory; ferroelectric; array; memory
Prior art date: 2002-11-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2003284565A

Inventor

Shigeki Sakai

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

National Institute of Advanced Industrial Science and Technology AIST

Original Assignee

National Institute of Advanced Industrial Science and Technology AIST

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-11-20

Filing date

2003-11-19

Publication date

2004-06-15

2003-11-19 Application filed by National Institute of Advanced Industrial Science and Technology AIST filed Critical National Institute of Advanced Industrial Science and Technology AIST

2004-06-15 Publication of AU2003284565A1 publication Critical patent/AU2003284565A1/en

Status Abandoned legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/10—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the top-view layout
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/033—Manufacture or treatment of data-storage electrodes comprising ferroelectric layers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Semiconductor Memories (AREA)
Non-Volatile Memory (AREA)

AU2003284565A 2002-11-20 2003-11-19 Ferroelectric memory array Abandoned AU2003284565A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2002336253A JP2004172355A (en)	2002-11-20	2002-11-20	Ferroelectric memory array
JP2002-336253		2002-11-20
PCT/JP2003/014704 WO2004047176A1 (en)	2002-11-20	2003-11-19	Ferroelectric memory array

Publications (1)

Publication Number	Publication Date
AU2003284565A1 true AU2003284565A1 (en)	2004-06-15

Family

ID=32321800

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2003284565A Abandoned AU2003284565A1 (en)	2002-11-20	2003-11-19	Ferroelectric memory array

Country Status (3)

Country	Link
JP (1)	JP2004172355A (en)
AU (1)	AU2003284565A1 (en)
WO (1)	WO2004047176A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4511539B2 (en)	2004-08-16	2010-07-28	富士通セミコンダクター株式会社	Nonvolatile semiconductor memory
JP7248966B2 (en)	2016-07-06	2023-03-30	国立研究開発法人産業技術総合研究所	Semiconductor memory element, electric wiring, optical wiring, ferroelectric gate transistor, manufacturing method of electronic circuit, memory cell array and manufacturing method thereof
WO2018008609A1 (en) *	2016-07-06	2018-01-11	国立研究開発法人産業技術総合研究所	Semiconductor storage element, other elements, and method for manufacturing same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS63279496A (en) *	1987-05-12	1988-11-16	Citizen Watch Co Ltd	Semiconductor non-volatile memory
JPH04352354A (en) *	1991-05-29	1992-12-07	Nec Corp	Lsi component of wsi chip
JP3465397B2 (en) *	1995-01-26	2003-11-10	ソニー株式会社	Semiconductor nonvolatile memory device
CN1260733C (en) *	1997-11-14	2006-06-21	罗姆股份有限公司	Semiconductor memory and method for accessing semiconductor memory
JP2002009255A (en) *	2000-06-19	2002-01-11	Matsushita Electric Ind Co Ltd	Non-volatile semiconductor storage device
JP2002329843A (en) *	2001-04-26	2002-11-15	Canon Inc	Ferroelectric transistor type nonvolatile memory element and method of manufacturing the same

2002
- 2002-11-20 JP JP2002336253A patent/JP2004172355A/en active Pending
2003
- 2003-11-19 WO PCT/JP2003/014704 patent/WO2004047176A1/en active Application Filing
- 2003-11-19 AU AU2003284565A patent/AU2003284565A1/en not_active Abandoned

Also Published As

Publication number	Publication date
JP2004172355A (en)	2004-06-17
WO2004047176A1 (en)	2004-06-03

Publication	Publication Date	Title
AU2003253428A1 (en)	2004-02-25	Nonvolatile memory device
AU2003201760A1 (en)	2003-10-20	Phase-change memory device
EP1554732B8 (en)	2015-04-08	Highly compact non-volatile memory and method thereof
AU2003212801A1 (en)	2003-09-02	Microelectronic stimulator array
AU2003223473A1 (en)	2003-11-03	Microelectronic stimulator array
AU2002354082A1 (en)	2003-06-23	Nonvolatile memory
AU2002306638A1 (en)	2002-09-19	Single transistor ferroelectric memory cell
AU2003225221A1 (en)	2003-11-17	Reflect array antenna wih assymetrically switched antenna elements
AU2002366471A1 (en)	2003-06-30	Non-volatile memory
AU2003235106A1 (en)	2004-11-19	Semiconductor memory
AU2002344397A1 (en)	2003-11-11	Array antenna
AU2002358302A1 (en)	2003-07-24	Programming non-volatile memory devices
AU2003241803A1 (en)	2005-01-21	Ferroelectric memory
AU2003258032A1 (en)	2004-02-23	Content addressable memory with cascaded array
AUPS261402A0 (en)	2002-06-20	Array monitoring
SG108925A1 (en)	2005-02-28	Non-volatile memory cells
AU2003285948A1 (en)	2004-06-30	Source-biased memory cell array
AU2003221799A1 (en)	2004-11-26	Cubic memory array
AU2003249434A1 (en)	2004-03-19	Dynamic memory management
AU2003300903A1 (en)	2004-06-30	Regulome arrays
AU2003272109A1 (en)	2004-05-13	Flash eeprom unit cell and memory array architecture including the same
AU2003229062A1 (en)	2003-12-02	Antenna for array applications
AU2003230158A1 (en)	2003-12-19	Dense array structure for non-volatile semiconductor memories
AU2003286914A1 (en)	2004-06-18	Bios storage array
AU2003227363A1 (en)	2004-11-19	Semiconductor memory

Legal Events

Date	Code	Title	Description
2005-08-04	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase