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AU2001288232A1 - Method and apparatus for tuning a plasma reactor chamber - Google Patents

Method and apparatus for tuning a plasma reactor chamber

Info

Publication number
AU2001288232A1
AU2001288232A1 AU2001288232A AU8823201A AU2001288232A1 AU 2001288232 A1 AU2001288232 A1 AU 2001288232A1 AU 2001288232 A AU2001288232 A AU 2001288232A AU 8823201 A AU8823201 A AU 8823201A AU 2001288232 A1 AU2001288232 A1 AU 2001288232A1
Authority
AU
Australia
Prior art keywords
tuning
plasma reactor
reactor chamber
chamber
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001288232A
Inventor
Steven T. Fink
Robert G. Hostetler
Wayne L. Johnson
Eric J. Strang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2001288232A1 publication Critical patent/AU2001288232A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
AU2001288232A 2000-08-10 2001-08-07 Method and apparatus for tuning a plasma reactor chamber Abandoned AU2001288232A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22421700P 2000-08-10 2000-08-10
US60/224,217 2000-08-10
PCT/US2001/024570 WO2002014810A2 (en) 2000-08-10 2001-08-07 Method and apparatus for tuning a plasma reactor chamber

Publications (1)

Publication Number Publication Date
AU2001288232A1 true AU2001288232A1 (en) 2002-02-25

Family

ID=22839742

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001288232A Abandoned AU2001288232A1 (en) 2000-08-10 2001-08-07 Method and apparatus for tuning a plasma reactor chamber

Country Status (3)

Country Link
US (1) US6960887B2 (en)
AU (1) AU2001288232A1 (en)
WO (1) WO2002014810A2 (en)

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US6963043B2 (en) * 2002-08-28 2005-11-08 Tokyo Electron Limited Asymmetrical focus ring
US20070012402A1 (en) * 2003-07-08 2007-01-18 Sundew Technologies, Llc Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
WO2007094616A1 (en) * 2006-02-14 2007-08-23 Brooks Automation Asia Ltd. Load-lock chamber for vacuum processing of substrate
EP2044608B1 (en) 2006-07-20 2012-05-02 SPP Process Technology Systems UK Limited Ion sources
US8400063B2 (en) * 2006-07-20 2013-03-19 Aviza Technology Limited Plasma sources
WO2008009889A1 (en) * 2006-07-20 2008-01-24 Aviza Technology Limited Ion deposition apparatus
US7416677B2 (en) * 2006-08-11 2008-08-26 Tokyo Electron Limited Exhaust assembly for plasma processing system and method
US20080302303A1 (en) * 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US8142606B2 (en) * 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
US10479509B2 (en) * 2007-12-21 2019-11-19 Airbus Operations Gmbh Ventilation system for wide-bodied aircraft
SG10201405042QA (en) * 2009-08-31 2014-10-30 Lam Res Corp A multi-peripheral ring arrangement for performing plasma confinement
JP5606063B2 (en) * 2009-12-28 2014-10-15 東京エレクトロン株式会社 Plasma processing equipment
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
JP5661513B2 (en) * 2011-03-03 2015-01-28 東京エレクトロン株式会社 Plasma processing equipment
US9039911B2 (en) 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
US9490152B2 (en) * 2012-05-29 2016-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Asymmetrical chamber configuration
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9230819B2 (en) 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US9017526B2 (en) * 2013-07-08 2015-04-28 Lam Research Corporation Ion beam etching system
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
WO2015023435A1 (en) * 2013-08-12 2015-02-19 Applied Materials, Inc. Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactors
US10047457B2 (en) * 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
JP6230900B2 (en) * 2013-12-19 2017-11-15 東京エレクトロン株式会社 Substrate processing equipment
US9418869B2 (en) 2014-07-29 2016-08-16 Lam Research Corporation Method to etch a tungsten containing layer
JP6523714B2 (en) * 2015-03-05 2019-06-05 東京エレクトロン株式会社 Plasma processing system
JP2019075517A (en) * 2017-10-19 2019-05-16 東京エレクトロン株式会社 Processing device and member having diffusion path
KR20220047654A (en) 2019-08-28 2022-04-18 어플라이드 머티어리얼스, 인코포레이티드 Tuning Methods to Improve Plasma Stability
US20210388495A1 (en) * 2020-06-16 2021-12-16 Applied Materials, Inc. Asymmetric exhaust pumping plate design for a semiconductor processing chamber
CN111811767B (en) * 2020-08-10 2024-06-04 中国空气动力研究与发展中心超高速空气动力研究所 Free molecular flow generating device for lean gas dynamic test

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209357A (en) 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
JPS5623745A (en) 1979-08-01 1981-03-06 Hitachi Ltd Plasma etching device
US4367114A (en) 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
US4389307A (en) * 1981-06-22 1983-06-21 Queen's University At Kingston Arrangement of multiple fluid cyclones
DE3914065A1 (en) * 1989-04-28 1990-10-31 Leybold Ag DEVICE FOR CARRYING OUT PLASMA ETCHING PROCESSES
US5800686A (en) 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US6132550A (en) * 1995-08-11 2000-10-17 Sumitomo Electric Industries, Ltd. Apparatuses for desposition or etching
JP4114972B2 (en) * 1997-05-27 2008-07-09 キヤノンアネルバ株式会社 Substrate processing equipment
US6335293B1 (en) * 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
CA2272596A1 (en) * 1999-05-21 2000-11-21 Lawrence A. Lambert Waste water treatment method and apparatus
EP1214459B1 (en) * 1999-08-17 2009-01-07 Tokyo Electron Limited Pulsed plasma processing method and apparatus

Also Published As

Publication number Publication date
WO2002014810A2 (en) 2002-02-21
WO2002014810A3 (en) 2002-09-19
US6960887B2 (en) 2005-11-01
US20030227258A1 (en) 2003-12-11

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