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AU2001241132A1 - Exposure controlling photomask and production method therefor - Google Patents

Exposure controlling photomask and production method therefor

Info

Publication number
AU2001241132A1
AU2001241132A1 AU2001241132A AU4113201A AU2001241132A1 AU 2001241132 A1 AU2001241132 A1 AU 2001241132A1 AU 2001241132 A AU2001241132 A AU 2001241132A AU 4113201 A AU4113201 A AU 4113201A AU 2001241132 A1 AU2001241132 A1 AU 2001241132A1
Authority
AU
Australia
Prior art keywords
production method
method therefor
exposure controlling
controlling photomask
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001241132A
Inventor
Takashi Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2001241132A1 publication Critical patent/AU2001241132A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
AU2001241132A 2000-03-14 2001-03-14 Exposure controlling photomask and production method therefor Abandoned AU2001241132A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000-117245 2000-03-14
JP2000117245 2000-03-14
JP2000-131832 2000-03-27
JP2000131832 2000-03-27
PCT/JP2001/002006 WO2001069316A1 (en) 2000-03-14 2001-03-14 Exposure controlling photomask and production method therefor

Publications (1)

Publication Number Publication Date
AU2001241132A1 true AU2001241132A1 (en) 2001-09-24

Family

ID=26590346

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001241132A Abandoned AU2001241132A1 (en) 2000-03-14 2001-03-14 Exposure controlling photomask and production method therefor

Country Status (6)

Country Link
US (1) US7052806B2 (en)
JP (1) JP4557242B2 (en)
CN (1) CN1244016C (en)
AU (1) AU2001241132A1 (en)
TW (1) TW575786B (en)
WO (1) WO2001069316A1 (en)

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* Cited by examiner, † Cited by third party
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CN1304273C (en) * 1999-12-06 2007-03-14 西孝 Gear and method of making the same
US7053387B2 (en) * 2002-08-19 2006-05-30 Konica Corporation Pattern drawing method by scanning beam and pattern drawing apparatus
JP4479535B2 (en) * 2005-02-21 2010-06-09 セイコーエプソン株式会社 Optical element manufacturing method
US7220680B1 (en) * 2005-10-31 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for photolithography in semiconductor manufacturing
US7955516B2 (en) * 2006-11-02 2011-06-07 Applied Materials, Inc. Etching of nano-imprint templates using an etch reactor
US7883822B2 (en) * 2007-10-17 2011-02-08 Texas Instruments Incorporated Graded lithographic mask
JP5568934B2 (en) * 2009-09-29 2014-08-13 ソニー株式会社 Solid-state imaging device, method for manufacturing solid-state imaging device, electronic device, lens array
CN103631087A (en) * 2012-08-22 2014-03-12 北京京东方光电科技有限公司 Light obstructing substrate and manufacturing method thereof, and method for obstructing UV light in box aligning process
CN103345010A (en) * 2013-07-11 2013-10-09 中国科学院光电技术研究所 Method for manufacturing micro-lens array element based on polydimethylsiloxane template
CN104505471B (en) * 2014-12-22 2017-12-29 昆山工研院新型平板显示技术中心有限公司 A kind of preparation method and mask plate of high aperture mask plate
US10895008B2 (en) * 2017-03-31 2021-01-19 Dai Nippon Printing Co., Ltd. Vapor deposition mask, frame-equipped vapor deposition mask, vapor deposition mask preparation body, vapor deposition pattern forming method, and method for producing organic semiconductor element
CN110498388A (en) * 2018-05-18 2019-11-26 上海新微技术研发中心有限公司 Photomask and method for processing fine structure
JP7178277B2 (en) * 2019-01-25 2022-11-25 株式会社トッパンフォトマスク Imprint mold manufacturing method
US12210279B2 (en) * 2021-05-27 2025-01-28 AGC Inc. Electroconductive-film-coated substrate and reflective mask blank

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5794706A (en) 1980-12-04 1982-06-12 Ricoh Co Ltd Plate-like lens
JPS6420628A (en) 1987-07-16 1989-01-24 Agency Ind Science Techn Flattening method
US4971426A (en) 1989-10-11 1990-11-20 Eastman Kodak Company Optical article for reflection modulation
JP2837291B2 (en) 1991-07-02 1998-12-14 シャープ株式会社 Original image reading device
JP3158296B2 (en) 1991-11-19 2001-04-23 ソニー株式会社 Forming method of micro condenser lens
US5310623A (en) * 1992-11-27 1994-05-10 Lockheed Missiles & Space Company, Inc. Method for fabricating microlenses
JPH0627636A (en) 1992-07-10 1994-02-04 Seiko Epson Corp Photomask and production of photomask as well as etching method and exposing method
DE4333620A1 (en) * 1993-10-15 1995-04-20 Jenoptik Technologie Gmbh Arrangement and method for generating dose profiles for the production of surface profiles
JP3357160B2 (en) 1994-01-18 2002-12-16 有限会社東京テクノロジー Electron beam drawing method and electron beam drawing system
JP3642801B2 (en) * 1994-02-18 2005-04-27 リコー光学株式会社 EXPOSURE MASK, ITS MANUFACTURING METHOD, SURFACE SHAPE FORMING METHOD USING EXPOSURE MASK, AND EXPOSURE MASK MANUFACTURING APPARATUS
AU5325596A (en) * 1995-04-26 1996-11-18 Minnesota Mining And Manufacturing Company Method and apparatus for step and repeat exposures
JPH097115A (en) 1995-06-16 1997-01-10 Victor Co Of Japan Ltd Production of thin-film magnetic head
KR0183923B1 (en) 1996-09-10 1999-04-01 삼성전자주식회사 Manufacturing method of phase inversion mask
JPH11237625A (en) 1998-02-23 1999-08-31 Alps Electric Co Ltd Photomask and production of rugged body using the phtomask
US6534221B2 (en) * 1998-03-28 2003-03-18 Gray Scale Technologies, Inc. Method for fabricating continuous space variant attenuating lithography mask for fabrication of devices with three-dimensional structures and microelectronics
CN2362168Y (en) 1998-11-24 2000-02-02 聂世锦 Three-colour traffic lights
US6335151B1 (en) * 1999-06-18 2002-01-01 International Business Machines Corporation Micro-surface fabrication process
JP4437366B2 (en) * 2000-11-02 2010-03-24 リコー光学株式会社 Manufacturing method of density distribution mask by power modulation method

Also Published As

Publication number Publication date
US20030135979A1 (en) 2003-07-24
JP4557242B2 (en) 2010-10-06
CN1244016C (en) 2006-03-01
US7052806B2 (en) 2006-05-30
TW575786B (en) 2004-02-11
WO2001069316A1 (en) 2001-09-20
CN1429353A (en) 2003-07-09

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