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CN104505471B - A kind of preparation method and mask plate of high aperture mask plate - Google Patents

A kind of preparation method and mask plate of high aperture mask plate Download PDF

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Publication number
CN104505471B
CN104505471B CN201410809458.1A CN201410809458A CN104505471B CN 104505471 B CN104505471 B CN 104505471B CN 201410809458 A CN201410809458 A CN 201410809458A CN 104505471 B CN104505471 B CN 104505471B
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China
Prior art keywords
mask plate
connecting bridge
high aperture
low polymer
preparation
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CN201410809458.1A
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Chinese (zh)
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CN104505471A (en
Inventor
张秀玉
刘周英
党鹏乐
张小宝
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Kunshan New Flat Panel Display Technology Center Co Ltd
Kunshan Guoxian Photoelectric Co Ltd
Original Assignee
Kunshan New Flat Panel Display Technology Center Co Ltd
Kunshan Guoxian Photoelectric Co Ltd
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Priority to CN201410809458.1A priority Critical patent/CN104505471B/en
Publication of CN104505471A publication Critical patent/CN104505471A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The present invention provides a kind of preparation method of high aperture mask plate, comprises the following steps:S1, mask plate surface be coated with photo-curing material, and ultraviolet radiation-curable is carried out to the photo-curing material of mask plate body region and connecting bridge reserved area and forms low polymer, cleaning removes connecting bridge after the uncured photo-curing material in corrosion region surface, the mask plate that surface is coated with to low polymer again is immersed in corrosive solution and gets rid of connecting bridge and treat corrosion region, obtains to surface and is coated with the mask plate of low polymer;S2:The low polymer of mask plate surface is removed, produces high aperture mask plate.Width of the invention by reducing mask plate main body connecting bridge, it can effectively increase the aperture opening ratio of mask plate, aperture opening ratio is increased 30 50%.

Description

A kind of preparation method and mask plate of high aperture mask plate
Technical field
The present invention relates to a kind of technical field of organic electroluminescence device manufacture, specifically a kind of mask of high aperture The mask plate that the preparation method and method of plate are prepared.
Background technology
As the display device of a new generation, OLED is that OLED has traditional monitor incomparable Advantage, such as self-luminous, low backlight, achievable ultra-thin display and Flexible Displays, driving voltage, power saving, reaction speed are not needed It is fast etc., it is widely used.
RGB juxtaposition methods are a kind of basic skills that OLED realizes full-color display.This method makees R/G/B monochrome devices For sub-pixel, and it is combined into a pixel and realizes full-color EL display.This method takes full advantage of the high efficiency feature of OLED, It is the screen body efficiency high of making, low in energy consumption.When R/G/B sub-pixels are deposited, typically fine mask plate FMM is used.
As described in Figure 1, the mask plate of prior art includes mask plate body region 02, mask plate main body connecting bridge 03, distribution Mask plate opening 01 between the mask plate body region 02 and mask plate main body connecting bridge 03.In FMM, using with perforate The mask plate of Invar (invar alloy) material be bundled on the framework of stainless steel, the thickness of mask plate is typically in 40-50 microns Between.When R/G/B sub-pixels are deposited, mask plate is bonded with substrates into intimate by magnet.But covering in Invar materials The method that perforate is prepared on diaphragm plate can only be wet etching, and perforate all very littles, the positioning accurate accuracy of wet etching are poor, easily The position for the perforate for causing to finally obtain has relatively large deviation.Cause metal mask method FMM can not realize high-resolution screen body Evaporation, the highest resolution for the screen body that metal mask method FMM methods are prepared is 320PPI (Pixels Per Inch- per inch The number of pixels possessed) left and right.Therefore pursuit of the evaporation in the industry to high PPI at present causes to want aperture opening ratio evaporation mask plate Seek more and more higher.
The content of the invention
Therefore, the technical problems to be solved by the invention are that Invar of the prior art (invar alloy) mask plate is opened Mouth rate is low and there is relatively large deviation to lead to not the evaporation for realizing high-resolution screen body for the position of perforate, and then provides a kind of height and open The preparation method of mouth rate mask plate, the mask plate that this method is prepared have higher aperture opening ratio.
In order to solve the above technical problems, technical scheme is as follows:
A kind of preparation method of high aperture mask plate, comprises the following steps:
S1, in mask plate surface photo-curing material is coated with, and to the photocuring of mask plate body region and connecting bridge reserved area Material carries out ultraviolet radiation-curable and forms low polymer, and cleaning removes bridge in succession and treats the uncured photocuring in corrosion region surface After material,
S2, the mask plate that the step S1 surfaces prepared are coated with to low polymer are immersed in the company of getting rid of in corrosive solution Connect bridge and treat corrosion region, obtain to surface and be coated with the high aperture mask plate of low polymer;
S3:The low polymer of mask plate surface is removed, produces high aperture mask plate.
In the step S1, the mask plate main body connecting bridge is divided into connecting bridge reserved area and is arranged on the connecting bridge The connecting bridge of reserved area both sides treats corrosion region.
The connecting bridge treats that the area of corrosion region is the 30%-50% of connecting bridge reserved area area.
In the step S1, described low polymer is polyimides.
In the step S2, the mask plate that surface is coated with to low polymer is immersed in the FeCl that concentration is 80-95%3 Solution, under conditions of power-on voltage is 70-100v the immersion 30-300 seconds get rid of connecting bridge and treat corrosion region, obtain surface coating There is the high aperture mask plate of low polymer.
The step S3 is:The mask plate for being coated with low polymer is positioned in the solution of dimethyl acetamide and soaks 10- 25 minutes.
The step S1 goes to connect using organic solution cleaning treats the uncured photo-curing material in corrosion region surface except connecing bridge.
The high aperture mask plate that a kind of above method is prepared, including mask plate body region, for connecting described cover The connecting bridge reserved area of diaphragm plate body region, the mask plate being distributed between the mask plate body region and connecting bridge reserved area are opened Mouthful.
The above-mentioned technical proposal of the present invention has advantages below compared with prior art:
(1) preparation method of high aperture mask plate of the present invention is to be coated with photo-curing material in mask plate surface, And ultraviolet radiation-curable is carried out to the photo-curing material of mask plate body region and connecting bridge reserved area and forms low polymer, cleaning Remove connecting bridge and be immersed in corrosive solution iron chloride after the uncured photo-curing material in corrosion region surface, then by mask plate Connecting bridge is got rid of in solution and treats corrosion region, then removes the low polymer of mask plate surface again, obtains high aperture mask plate. Compared with prior art, by reducing the width of mask plate main body connecting bridge, the aperture opening ratio of mask plate can effectively be increased, specifically Aperture opening ratio can be probably set to increase 30-50%.
(2) photo-curing material of the invention is using the polyimides that low polymer degree is formed after ultraviolet light solidification, and it can be with The integrality of mask plate body region and connecting bridge reserved area during erosion removal connecting bridge treats corrosion region is effectively protected, and It is placed on easily to remove from the surface of mask plate when in the solution of dimethyl acetamide.
(3) present invention, will not be to covering during aperture opening ratio is increased using a part for etchant solution etching connecting bridge The flatness of diaphragm plate has an impact, and can ensure that deviation does not occur for mask plate aperture position, and then ensure that and subsequently use process In vapor deposition accuracy.
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, specific embodiment and combination below according to the present invention Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the structural representation of prior art mask plate;
Fig. 2 is that embodiment 1 completes the mask structure being schematic diagram after S1 steps;
Fig. 3 is high aperture mask plate prepared by the present invention;
Fig. 4 is that embodiment 2 completes the mask structure being schematic diagram after S1 steps;
Reference therein is:01- mask plate openings, 02- mask plates body region, 03- mask plate main body connecting bridges, 04- connecting bridges treat corrosion region, 05- connecting bridges reserved area.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention Formula is described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein. Conversely, there is provided these embodiments so that the disclosure will be thorough and complete, and the design of the present invention will be fully conveyed to Those skilled in the art, the present invention will only be defined by the appended claims.
Embodiment 1
As shown in Figures 2 and 3, the preparation method of a kind of high aperture mask plate of the present invention, comprises the following steps:
S1:Photo-curing material is coated with mask plate surface, and to the light of mask plate body region 02 and connecting bridge reserved area 05 Curing materials carry out ultraviolet radiation-curable formed low polymer, with alcohol washes remove connecting bridge treat the surface of corrosion region 04 not by The photo-curing material of solidification;
S2:The mask plate that the step S1 surfaces prepared are coated with to low polymer is immersed in concentration as 80-95%'s FeCl3Solution, under conditions of power-on voltage is 70-100v the immersion 30-300 seconds get rid of connecting bridge and treat corrosion region 04, obtain Surface is coated with the mask plate of low polymer;Described low polymer is polyimides.
S3:Be coated with low polymer mask plate be positioned in the solution of dimethyl acetamide soak 15-25 minutes remove The low polymer of mask plate surface, produce high aperture mask plate.
Fig. 3 show the high aperture mask plate that the above method is prepared, including mask plate body region 02, for connecting The connecting bridge reserved area 05 of the mask plate body region 02, be distributed in the mask plate body region 02 and connecting bridge reserved area 05 it Between mask plate opening 01.The mask plate compared with common mask plate, the connecting bridge reserved area 05 of mask plate body region 02 Area is only the 50-70% of the area of prior art connecting bridge 03, and aperture opening ratio significantly increases.Higher available for evaporation resolution ratio is aobvious Show device.The mask plate material of the present invention is Invar (invar alloy), specially dilval material.
The photo-curing material used in the present invention is not particularly limited, and can arbitrarily be selected as long as not damaging the effect of the present invention Select.They can be the organic compound of any one low polymerization degree that can solidify on Invar (invar alloy).These are low It is that polyimides (is purchased from the high outstanding polyimides material in Jilin as preferable photo-curing material among the organic compound of the degree of polymerization Expect Co., Ltd).
The corrosive solution used in the present invention is also not particularly limited, as long as the effect for not damaging the present invention can be any Selection.They can be the solution that any one can corrode dilval material.Among these solution, preferable concentration is 80-95% FeCl3 solution.
Embodiment 2
Another embodiment of the present invention as shown in figure 4, a kind of preparation method of high aperture mask plate of the present invention, including Following steps:
S1:Photo-curing material is coated with mask plate surface, and to the light of mask plate body region 02 and connecting bridge reserved area 05 Curing materials carry out ultraviolet radiation-curable formed low polymer, with alcohol washes remove connecting bridge treat the surface of corrosion region 04 not by The photo-curing material of solidification;
S3, the step S1 surfaces prepared are coated with to the mask plate of low polymer, and to be immersed in concentration be 80-95%'s FeCl3Solution, under conditions of power-on voltage is 70-100v the immersion 30-300 seconds get rid of connecting bridge and treat corrosion region 04, obtain Surface is coated with the mask plate of low polymer;Described low polymer is polyimides.
S4:Be coated with low polymer mask plate be positioned in the solution of dimethyl acetamide soak 20 minutes remove cover The low polymer on diaphragm plate surface, produce high aperture mask plate.
As transformable embodiment, the connecting bridge treats that corrosion region 04 can also be arranged on the connecting bridge reserved area 05 downside.
Obviously, above-described embodiment is only intended to clearly illustrate example, and is not the restriction to embodiment.It is right For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or Among changing still in the protection domain of the invention.

Claims (8)

1. a kind of preparation method of high aperture mask plate, it is characterised in that comprise the following steps:
S1:Photo-curing material is coated with mask plate surface, and to the light of mask plate body region (02) and connecting bridge reserved area (05) Curing materials carry out ultraviolet radiation-curable and form low polymer, and cleaning removes connecting bridge and treats that corrosion region (04) surface is uncured Photo-curing material;
S2, the mask plate that the step S1 surfaces prepared are coated with to low polymer are immersed in corrosive solution and get rid of connecting bridge Corrosion region (04) is treated, obtains to surface and is coated with the high aperture mask plate of low polymer;
S3:The low polymer of mask plate surface is removed, produces high aperture mask plate.
2. the preparation method of high aperture mask plate according to claim 1, it is characterised in that:
In the step S1, the mask plate main body connecting bridge (03) is divided into connecting bridge reserved area (05) and is arranged on the company The connecting bridge for connecing bridge reserved area (05) both sides treats corrosion region (04).
3. the preparation method of high aperture mask plate according to claim 1, it is characterised in that:The connecting bridge is waited to corrode The area in area (04) is the 30%-50% of connecting bridge reserved area (05) area.
4. the preparation method of high aperture mask plate according to claim 1, it is characterised in that:In the step S1, institute The low polymer stated is polyimides.
5. the preparation method of high aperture mask plate according to claim 1, it is characterised in that:, will in the step S2 The mask plate that surface is coated with low polymer is immersed in the FeCl that concentration is 80-95%3Solution, it is 70-100v in power-on voltage Under conditions of the immersion 30-300 seconds get rid of connecting bridge and treat corrosion region (04), obtain to surface and be coated with the high aperture of low polymer Mask plate.
6. the preparation method of high aperture mask plate according to claim 1, it is characterised in that:The step S3 is:Apply The mask plate for being furnished with low polymer is positioned over immersion 10-25 minutes in the solution of dimethyl acetamide.
7. the preparation method of high aperture mask plate according to claim 1, it is characterised in that:The step S1, which is used, to be had The cleaning of machine solution removes connecting bridge and treats the uncured photo-curing material in corrosion region (04) surface.
8. the high aperture mask plate that a kind of claim 1-7 either method is prepared, it is characterised in that including mask plate master Body area (02), for connecting the connecting bridge reserved area (05) of the mask plate body region (02), it is distributed in the mask plate main body Mask plate opening (01) between area (02) and connecting bridge reserved area (05).
CN201410809458.1A 2014-12-22 2014-12-22 A kind of preparation method and mask plate of high aperture mask plate Active CN104505471B (en)

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Publication number Priority date Publication date Assignee Title
CN111364002B (en) * 2020-04-08 2022-05-24 山东奥莱电子科技有限公司 Manufacturing method of fine metal mask plate suitable for high PPI

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CN1134600A (en) * 1995-01-13 1996-10-30 株式会社半导体能源研究所 Method and apparatus for fabricating thin-film transistors
CN1429353A (en) * 2000-03-14 2003-07-09 西孝 Exposure controlling photomask and production method therefor
CN1706032A (en) * 2003-04-25 2005-12-07 住友电气工业株式会社 Method for manufacturing semiconductor device
CN1606156A (en) * 2003-10-09 2005-04-13 精工爱普生株式会社 Semiconductor device and method for making same
CN101887214A (en) * 2010-07-16 2010-11-17 中国科学院长春光学精密机械与物理研究所 Method for preparing fine metal mask bushing by wet etching
CN103205701A (en) * 2012-01-16 2013-07-17 昆山允升吉光电科技有限公司 A vapor deposition mask plate and a production method thereof
CN103205700A (en) * 2012-01-16 2013-07-17 昆山允升吉光电科技有限公司 A mask plate for effectively improving vapor deposition quality and a production process thereof
CN102590944A (en) * 2012-03-31 2012-07-18 上海光芯集成光学股份有限公司 Mask technology for glass substrate for ion exchange

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