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ATE543104T1 - Auf magnettunnelübergang (mtj) basierender magnetfeldwinkelsensor - Google Patents

Auf magnettunnelübergang (mtj) basierender magnetfeldwinkelsensor

Info

Publication number
ATE543104T1
ATE543104T1 AT08392004T AT08392004T ATE543104T1 AT E543104 T1 ATE543104 T1 AT E543104T1 AT 08392004 T AT08392004 T AT 08392004T AT 08392004 T AT08392004 T AT 08392004T AT E543104 T1 ATE543104 T1 AT E543104T1
Authority
AT
Austria
Prior art keywords
magnetic tunnel
tunnel junction
magnetic field
multiple layer
magnetic
Prior art date
Application number
AT08392004T
Other languages
English (en)
Inventor
Yimin Guo
Po-Kang Wang
Original Assignee
Magic Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Magic Technologies Inc filed Critical Magic Technologies Inc
Application granted granted Critical
Publication of ATE543104T1 publication Critical patent/ATE543104T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
AT08392004T 2007-05-02 2008-04-29 Auf magnettunnelübergang (mtj) basierender magnetfeldwinkelsensor ATE543104T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/799,706 US7635974B2 (en) 2007-05-02 2007-05-02 Magnetic tunnel junction (MTJ) based magnetic field angle sensor

Publications (1)

Publication Number Publication Date
ATE543104T1 true ATE543104T1 (de) 2012-02-15

Family

ID=39939104

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08392004T ATE543104T1 (de) 2007-05-02 2008-04-29 Auf magnettunnelübergang (mtj) basierender magnetfeldwinkelsensor

Country Status (4)

Country Link
US (1) US7635974B2 (de)
EP (2) EP2040089B1 (de)
JP (2) JP5596906B2 (de)
AT (1) ATE543104T1 (de)

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Also Published As

Publication number Publication date
EP2040089B1 (de) 2012-01-25
EP2458395B1 (de) 2013-09-18
EP2458395A1 (de) 2012-05-30
US7635974B2 (en) 2009-12-22
JP5973498B2 (ja) 2016-08-23
US20080272771A1 (en) 2008-11-06
JP2014220507A (ja) 2014-11-20
EP2040089A3 (de) 2010-08-04
JP2008277834A (ja) 2008-11-13
JP5596906B2 (ja) 2014-09-24
EP2040089A2 (de) 2009-03-25

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