[go: up one dir, main page]

ATE521736T1 - Verfahren zur herstellung einer mehrschaligen nanokristallinen struktur, mehrschalige nanokristalline strukturen und eine damit hergestellte anordnung - Google Patents

Verfahren zur herstellung einer mehrschaligen nanokristallinen struktur, mehrschalige nanokristalline strukturen und eine damit hergestellte anordnung

Info

Publication number
ATE521736T1
ATE521736T1 AT06254428T AT06254428T ATE521736T1 AT E521736 T1 ATE521736 T1 AT E521736T1 AT 06254428 T AT06254428 T AT 06254428T AT 06254428 T AT06254428 T AT 06254428T AT E521736 T1 ATE521736 T1 AT E521736T1
Authority
AT
Austria
Prior art keywords
shell
shell nanocrystalline
producing
produced therefrom
structures
Prior art date
Application number
AT06254428T
Other languages
English (en)
Inventor
Shin Ae Jun
Eun Joo Jang
Original Assignee
Samsung Electro Mech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mech filed Critical Samsung Electro Mech
Application granted granted Critical
Publication of ATE521736T1 publication Critical patent/ATE521736T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/712—Integrated with dissimilar structures on a common substrate formed from plural layers of nanosized material, e.g. stacked structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/712—Integrated with dissimilar structures on a common substrate formed from plural layers of nanosized material, e.g. stacked structures
    • Y10S977/714—Containing protein
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2984—Microcapsule with fluid core [includes liposome]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Luminescent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
AT06254428T 2005-09-12 2006-08-24 Verfahren zur herstellung einer mehrschaligen nanokristallinen struktur, mehrschalige nanokristalline strukturen und eine damit hergestellte anordnung ATE521736T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050084554A KR101159853B1 (ko) 2005-09-12 2005-09-12 다층구조 나노결정의 제조방법 및 그에 의해 수득된 나노결정

Publications (1)

Publication Number Publication Date
ATE521736T1 true ATE521736T1 (de) 2011-09-15

Family

ID=37622093

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06254428T ATE521736T1 (de) 2005-09-12 2006-08-24 Verfahren zur herstellung einer mehrschaligen nanokristallinen struktur, mehrschalige nanokristalline strukturen und eine damit hergestellte anordnung

Country Status (5)

Country Link
US (1) US7621997B2 (de)
EP (1) EP1762642B1 (de)
JP (1) JP5536972B2 (de)
KR (1) KR101159853B1 (de)
AT (1) ATE521736T1 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007145089A1 (ja) * 2006-06-14 2007-12-21 Konica Minolta Medical & Graphic, Inc. ３層型半導体粒子
WO2008028054A1 (en) * 2006-08-30 2008-03-06 University Of Florida Research Foundation, Inc. Doped nanocrystals
WO2008133660A2 (en) 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
JP5151993B2 (ja) * 2007-01-22 2013-02-27 コニカミノルタエムジー株式会社 コア／シェル型半導体ナノ粒子とその製造方法
KR100841186B1 (ko) * 2007-03-26 2008-06-24 삼성전자주식회사 다층 쉘 구조의 나노결정 및 그의 제조방법
KR100900866B1 (ko) 2007-05-09 2009-06-04 삼성전자주식회사 나노결정-금속산화물 복합체를 이용하는 발광 다이오드소자 및 그의 제조방법
CN101070474B (zh) * 2007-06-14 2011-01-19 中南大学 灯用壳层梯度绿色发光材料及其制备方法
KR20100040959A (ko) * 2007-08-06 2010-04-21 에이전시 포 사이언스, 테크놀로지 앤드 리서치 카드뮴 및 셀레늄 함유 나노결정질 복합물의 제조 방법 및 이로부터 수득된 나노결정질 복합물
GB0724298D0 (en) * 2007-12-12 2008-01-23 Smartwater Ltd A method for improving the long term stability of nano-crystalline semiconductors in an exterior enviroment
EP2337763A4 (de) * 2008-10-03 2013-09-04 Life Technologies Corp Verfahren zur herstellung von nanokristallen mithilfe eines schwachen elektronenübertragungswirkstoffs und fehlerhaften hüllenvorläufern
CN102264630B (zh) * 2008-10-24 2016-10-19 生命科技公司 稳定的纳米粒子以及制造和使用这种粒子的方法
JP5007293B2 (ja) * 2008-10-31 2012-08-22 Ｄｏｗａホールディングス株式会社 カルコゲン化合物粉の製造方法
KR101480511B1 (ko) 2008-12-19 2015-01-08 삼성전자 주식회사 금속-계면활성제층으로 코팅된 나노 결정의 제조 방법
WO2010123814A1 (en) * 2009-04-20 2010-10-28 3M Innovative Properties Company Non-radiatively pumped wavelength converter
US8455904B2 (en) 2009-04-20 2013-06-04 3M Innovative Properties Company Non-radiatively pumped wavelength converter
KR101250859B1 (ko) * 2009-05-04 2013-04-04 최경재 다층 양자점 및 그 다층 양자점을 적용한 발광소자
WO2011100023A1 (en) 2010-02-10 2011-08-18 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
KR101664180B1 (ko) * 2010-03-22 2016-10-12 삼성디스플레이 주식회사 양자점 제조 방법
WO2012099653A2 (en) 2010-12-08 2012-07-26 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
WO2012158832A2 (en) * 2011-05-16 2012-11-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
KR101320549B1 (ko) * 2011-06-14 2013-10-28 주식회사 큐디솔루션 코어-다중쉘 구조의 양자점 및 이의 제조방법
KR101278257B1 (ko) * 2011-08-25 2013-06-24 한국기계연구원 양자점 및 그 제조 방법
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
KR101353350B1 (ko) * 2011-11-09 2014-01-21 한국표준과학연구원 광대역 파장 흡수 및 에너지변환을 이용한 고효율 태양전지
US9159872B2 (en) 2011-11-09 2015-10-13 Pacific Light Technologies Corp. Semiconductor structure having nanocrystalline core and nanocrystalline shell
WO2013078247A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Methods of coating semiconductor nanocrystals, semiconductor nanocrystals, and products including same
US10008631B2 (en) 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
WO2013078249A1 (en) 2011-11-22 2013-05-30 Qd Vision Inc. Method of making quantum dots
KR101960469B1 (ko) 2012-02-05 2019-03-20 삼성전자주식회사 반도체 나노결정, 그의 제조 방법, 조성물 및 제품
US10807865B2 (en) * 2012-03-15 2020-10-20 Massachusetts Institute Of Technology Semiconductor nanocrystals
US20140117311A1 (en) 2012-10-29 2014-05-01 Juanita N. Kurtin Semiconductor structure having nanocrystalline core and nanocrystalline shell pairing with compositional transition layer
KR101426448B1 (ko) * 2012-11-09 2014-08-05 주식회사 엘엠에스 나노 복합체, 이를 포함하는 광학 부재 및 백라이트 유닛
US10340427B2 (en) * 2014-02-04 2019-07-02 Lumileds Llc Quantum dots with inorganic ligands in an inorganic matrix
JP6697272B2 (ja) * 2015-01-19 2020-05-20 スタンレー電気株式会社 コアシェル構造を有する量子ドットとその製造方法
US9515194B2 (en) 2015-03-27 2016-12-06 International Business Machines Corporation Nano-ribbon channel transistor with back-bias control
KR102640897B1 (ko) * 2016-09-13 2024-02-26 엘지디스플레이 주식회사 양자막대, 그 합성 방법 및 양자막대 표시장치
KR102399447B1 (ko) * 2017-10-16 2022-05-17 엘지디스플레이 주식회사 양자점과 이를 포함하는 양자점 발광다이오드 및 양자점 발광 표시장치
KR102730916B1 (ko) 2018-01-11 2024-11-18 삼성전자주식회사 양자점과 그 제조 방법, 및 이를 포함하는 전자 소자
KR102200585B1 (ko) 2019-03-22 2021-01-11 재단법인대구경북과학기술원 고발광성 단파 적외선 나노입자 및 이의 제조방법
KR102746318B1 (ko) 2019-10-01 2024-12-24 삼성디스플레이 주식회사 양자점, 이를 포함하는 조성물과 복합체, 및 이를 포함하는 전자 소자
KR102696701B1 (ko) 2020-02-13 2024-08-22 삼성디스플레이 주식회사 양자점 및 이를 포함하는 발광 소자
CN113969165A (zh) 2020-07-23 2022-01-25 三星电子株式会社 量子点、以及包括其的量子点-聚合物复合物和电子设备
WO2024151282A2 (en) * 2022-05-12 2024-07-18 University Of Delaware Super-semiconductors based on nanostructured arrays

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49109289A (de) * 1973-02-21 1974-10-17
AUPP004497A0 (en) * 1997-10-28 1997-11-20 University Of Melbourne, The Stabilized particles
US6322901B1 (en) * 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6306736B1 (en) * 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US6225198B1 (en) * 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
EP1321363B1 (de) 2000-09-27 2008-07-16 Japan Tobacco Inc. Verpackungsmaterialfaltvorrichtung für verpackungsmaschine
EP2218762A3 (de) 2001-07-20 2010-09-29 Life Technologies Corporation Lumineszente Nanopartikel und Verfahren zu ihrer Herstellung
AU2003302316A1 (en) * 2002-08-13 2004-06-30 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
EP1590171B1 (de) * 2003-01-22 2011-06-08 The Board Of Trustees Of The University Of Arkansas Monodisperse nanokristalle mit kern/schale und anderen komplexen strukturen sowie herstellungsverfahren dafür
US7193098B1 (en) * 2003-03-20 2007-03-20 The Research Foundation Of State University Of New York Process for producing semiconductor nanocrystal cores, core-shell, core-buffer-shell, and multiple layer systems in a non-coordinating solvent utilizing in situ surfactant generation
JP4269842B2 (ja) * 2003-08-08 2009-05-27 日油株式会社 半導体ナノ微結晶の製造方法
US8017235B2 (en) * 2003-09-04 2011-09-13 National Institute Of Advanced Industrial Science And Technology Method for manufacturing fine composite particles, apparatus for manufacturing fine composite particles, and fine composite particles
US20070116868A1 (en) * 2003-09-24 2007-05-24 The Regents Of The University Of California Hybrid synthesis of core/shell nanocrystals
KR100590784B1 (ko) * 2004-01-14 2006-06-15 학교법인 포항공과대학교 Ｉｉ-ｖｉ 반도체 화합물로 이루어진 고발광성 ｉ형 적층구조 코어/2중 쉘 양자점 및 이의 제조 방법
KR100722086B1 (ko) * 2004-11-11 2007-05-25 삼성전자주식회사 다층구조의 나노결정 및 그의 제조방법

Also Published As

Publication number Publication date
JP5536972B2 (ja) 2014-07-02
KR101159853B1 (ko) 2012-06-25
EP1762642B1 (de) 2011-08-24
US7621997B2 (en) 2009-11-24
US20070059527A1 (en) 2007-03-15
EP1762642A3 (de) 2009-07-08
JP2007077010A (ja) 2007-03-29
KR20070029915A (ko) 2007-03-15
EP1762642A2 (de) 2007-03-14

Similar Documents

Publication Publication Date Title
ATE521736T1 (de) Verfahren zur herstellung einer mehrschaligen nanokristallinen struktur, mehrschalige nanokristalline strukturen und eine damit hergestellte anordnung
DE602008005556D1 (de) Verfahren zur Herstellung beschichteter Paneele und beschichtetes Paneel
ATE503734T1 (de) Honigwabenstruktur und verfahren zur herstellung
ATE547405T1 (de) Verfahren zur herstellung einer 1,2- dihydropyridin-2-onverbindung
ATE486857T1 (de) Verfahren zur herstellung von telmisartan
EP2201115A4 (de) Mutanten mit fähigkeit zur produktion von 1,4-butandiol und verfahren zur herstellung von 1,4-butandiol unter verwendung davon
WO2010032879A3 (en) Method for producing oxidized compound
DE602007000606D1 (de) System und Verfahren zur Herstellung einer flächenförmigen Struktur
EP1857413A4 (de) Regelmässig angeordnetes nanopartikuläres siliciumdioxid und herstellungsverfahren dafür
ATE471533T1 (de) Verfahren zur herstellung einer schablone
EA200701505A1 (ru) Композиционный материал и способ его изготовления
DE602005024742D1 (de) Verfahren zur Herstellung einer unpolaren einkristtrid-Halbleiter
DE602004014887D1 (de) Anorganische Nanokristalle mit einer organischen Beschichtung und deren Vorbereitungsverfahren
ATE434530T1 (de) Verfahren zur herstellung einer datenseite und datenseite
ATE448235T1 (de) Verfahren zur herstellung von isocyanatosilan und silylisocyanurat
EP2226328A4 (de) Verfahren zur herstellung einer alkylzinnoxidverbindung und verfahren zur herstellung eines carbonatesters mithilfe der verbindung
DE602007000647D1 (de) System und Verfahren zur Herstellung einer flächenförmigen Struktur
ATE486182T1 (de) Trägerartiges, aus einzelteilen zusammengesetztes bauelement sowie verfahren und vorrichtung zur herstellung des bauelements
EA200800167A1 (ru) Фасонные углеродные волокна и их применение
DE502006000347D1 (de) Oberflächenbelegte perlglanzpigmente, verfahren zu deren herstellung und deren verwendung
WO2007047523A3 (en) System and method for positioning and synthesizing of nanostructures
EP1939929A4 (de) Lotschicht, kühlkörper mit einer solchen lotschicht und verfahren zur herstellung eines solchen kühlkörpers
ATE501835T1 (de) Verfahren und vorrichtung zur herstellung eines tragflächenholmprofilelements
DE602005001161D1 (de) Verfahren zur Herstellung einer Kohlenstoffteilchen-Faser
DE502005009313D1 (de) Verfahren zur herstellung einer sinterrohmischung

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties