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ATE353475T1 - Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche - Google Patents

Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche

Info

Publication number
ATE353475T1
ATE353475T1 AT02292517T AT02292517T ATE353475T1 AT E353475 T1 ATE353475 T1 AT E353475T1 AT 02292517 T AT02292517 T AT 02292517T AT 02292517 T AT02292517 T AT 02292517T AT E353475 T1 ATE353475 T1 AT E353475T1
Authority
AT
Austria
Prior art keywords
producing
substrate surface
adhesive surface
substrate
adhesive substrate
Prior art date
Application number
AT02292517T
Other languages
English (en)
Inventor
Christophe Maleville
Corinne Maunand-Tussot
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Application granted granted Critical
Publication of ATE353475T1 publication Critical patent/ATE353475T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AT02292517T 2002-10-11 2002-10-11 Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche ATE353475T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02292517A EP1408534B1 (de) 2002-10-11 2002-10-11 Verfahren und Vorrichtung zur Herstellung einer haftenden Substratoberfläche
US46592303P 2003-04-24 2003-04-24

Publications (1)

Publication Number Publication Date
ATE353475T1 true ATE353475T1 (de) 2007-02-15

Family

ID=32773620

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02292517T ATE353475T1 (de) 2002-10-11 2002-10-11 Verfahren und vorrichtung zur herstellung einer haftenden substratoberfläche

Country Status (4)

Country Link
US (1) US20040069321A1 (de)
EP (1) EP1408534B1 (de)
JP (1) JP2004200653A (de)
AT (1) ATE353475T1 (de)

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* Cited by examiner, † Cited by third party
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US8920391B2 (en) * 2004-06-18 2014-12-30 Sunless, Inc. Container for system for spray coating human subject
US20050279865A1 (en) * 2004-06-18 2005-12-22 Innovative Developments, Llc Fluid spraying system
US20100129557A1 (en) * 2004-06-18 2010-05-27 Mt Industries, Inc. Spray coating at least one portion of a subject
US20070197982A1 (en) * 2006-01-05 2007-08-23 Scott Thomason Automatic body spray system
JP5317529B2 (ja) * 2008-05-02 2013-10-16 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェーハの処理方法及び処理装置
WO2010020092A1 (en) * 2008-08-20 2010-02-25 Acm Research (Shanghai) Inc. Barrier layer removal method and apparatus
DE102008061521B4 (de) * 2008-12-10 2011-12-08 Siltronic Ag Verfahren zur Behandlung einer Halbleiterscheibe
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
EP2390925A1 (de) * 2010-05-31 2011-11-30 Applied Materials, Inc. Herstellungsverfahren für Dünnfilmsolarzelle, Ätzverfahren, Vorrichtung zum Ätzen und Dünnfilmsolarvorrichtung

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US5158100A (en) * 1989-05-06 1992-10-27 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefor
JP2581268B2 (ja) * 1990-05-22 1997-02-12 日本電気株式会社 半導体基板の処理方法
JPH0719739B2 (ja) * 1990-09-10 1995-03-06 信越半導体株式会社 接合ウェーハの製造方法
US5464480A (en) * 1993-07-16 1995-11-07 Legacy Systems, Inc. Process and apparatus for the treatment of semiconductor wafers in a fluid
US5634978A (en) * 1994-11-14 1997-06-03 Yieldup International Ultra-low particle semiconductor method
JPH08264500A (ja) * 1995-03-27 1996-10-11 Sony Corp 基板の洗浄方法
US5714203A (en) * 1995-08-23 1998-02-03 Ictop Entwicklungs Gmbh Procedure for the drying of silicon
JPH0969509A (ja) * 1995-09-01 1997-03-11 Matsushita Electron Corp 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法
US6058945A (en) * 1996-05-28 2000-05-09 Canon Kabushiki Kaisha Cleaning methods of porous surface and semiconductor surface
JPH10144650A (ja) * 1996-11-11 1998-05-29 Mitsubishi Electric Corp 半導体材料の洗浄装置
US6027602A (en) * 1997-08-29 2000-02-22 Techpoint Pacific Singapore Pte. Ltd. Wet processing apparatus
US6701941B1 (en) * 1997-05-09 2004-03-09 Semitool, Inc. Method for treating the surface of a workpiece
US6240933B1 (en) * 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US20020157686A1 (en) * 1997-05-09 2002-10-31 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US20020066464A1 (en) * 1997-05-09 2002-06-06 Semitool, Inc. Processing a workpiece using ozone and sonic energy
EP0989962A4 (de) * 1997-06-13 2005-03-09 Mattson Technology Ip Inc Verfahren zur behandlung von halbleiterscheiben
US6423613B1 (en) * 1998-11-10 2002-07-23 Micron Technology, Inc. Low temperature silicon wafer bond process with bulk material bond strength
DE19853486A1 (de) * 1998-11-19 2000-05-31 Wacker Siltronic Halbleitermat Verfahren zur naßchemischen Behandlung von Halbleiterscheiben
US6240939B1 (en) * 1999-03-22 2001-06-05 Mcgee Charles P. Windbreak
JP2000349081A (ja) * 1999-06-07 2000-12-15 Sony Corp 酸化膜形成方法
JP4344855B2 (ja) * 1999-08-06 2009-10-14 野村マイクロ・サイエンス株式会社 電子デバイス用基板の有機汚染防止法及び有機汚染を防止した電子デバイス用基板
US6286231B1 (en) * 2000-01-12 2001-09-11 Semitool, Inc. Method and apparatus for high-pressure wafer processing and drying
US6492283B2 (en) * 2000-02-22 2002-12-10 Asm Microchemistry Oy Method of forming ultrathin oxide layer
FR2806892B1 (fr) * 2000-03-29 2002-06-14 Oreal Boitier du type boitier de maquillage comportant un couvercle articule
DE10036691A1 (de) * 2000-07-27 2002-02-14 Wacker Siltronic Halbleitermat Verfahren zur chemischen Behandlung von Halbleiterscheiben
JP4914536B2 (ja) * 2001-02-28 2012-04-11 東京エレクトロン株式会社 酸化膜形成方法
US6821908B1 (en) * 2001-09-10 2004-11-23 Mia-Com Inc., In-situ method for producing a hydrogen terminated hydrophobic surface on a silicon wafer
US20030087532A1 (en) * 2001-11-01 2003-05-08 Biao Wu Integrated process for etching and cleaning oxide surfaces during the manufacture of microelectronic devices

Also Published As

Publication number Publication date
JP2004200653A (ja) 2004-07-15
EP1408534A1 (de) 2004-04-14
US20040069321A1 (en) 2004-04-15
EP1408534B1 (de) 2007-02-07

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Legal Events

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