[go: up one dir, main page]

ATE211577T1 - Überspannungsdetektionsschaltung zur auswahl der prüfbetriebsart - Google Patents

Überspannungsdetektionsschaltung zur auswahl der prüfbetriebsart

Info

Publication number
ATE211577T1
ATE211577T1 AT97912749T AT97912749T ATE211577T1 AT E211577 T1 ATE211577 T1 AT E211577T1 AT 97912749 T AT97912749 T AT 97912749T AT 97912749 T AT97912749 T AT 97912749T AT E211577 T1 ATE211577 T1 AT E211577T1
Authority
AT
Austria
Prior art keywords
supervoltage
selecting
detection circuit
test mode
overvoltage detection
Prior art date
Application number
AT97912749T
Other languages
English (en)
Inventor
Joseph C Sher
Todd A Merritt
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE211577T1 publication Critical patent/ATE211577T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31701—Arrangements for setting the Unit Under Test [UUT] in a test mode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/46—Test trigger logic

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Dc-Dc Converters (AREA)
AT97912749T 1996-10-21 1997-10-21 Überspannungsdetektionsschaltung zur auswahl der prüfbetriebsart ATE211577T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/734,504 US5841714A (en) 1996-10-21 1996-10-21 Supervoltage circuit
PCT/US1997/018734 WO1998018134A1 (en) 1996-10-21 1997-10-21 Overvoltage detection circuit for test mode selection

Publications (1)

Publication Number Publication Date
ATE211577T1 true ATE211577T1 (de) 2002-01-15

Family

ID=24951958

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97912749T ATE211577T1 (de) 1996-10-21 1997-10-21 Überspannungsdetektionsschaltung zur auswahl der prüfbetriebsart

Country Status (8)

Country Link
US (1) US5841714A (de)
EP (1) EP0932904B1 (de)
JP (1) JP3413446B2 (de)
KR (1) KR100319029B1 (de)
AT (1) ATE211577T1 (de)
AU (1) AU4985697A (de)
DE (1) DE69709889T2 (de)
WO (1) WO1998018134A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949725A (en) * 1997-08-20 1999-09-07 Micron Technology, Inc. Method and apparatus for reprogramming a supervoltage circuit
US6496027B1 (en) * 1997-08-21 2002-12-17 Micron Technology, Inc. System for testing integrated circuit devices
US6046944A (en) * 1998-01-28 2000-04-04 Sun Microsystems, Inc. Bias generator circuit for low voltage applications
US6043702A (en) * 1998-01-29 2000-03-28 Sun Microsystems, Inc. Dynamic biasing for overshoot and undershoot protection circuits
US6347381B1 (en) * 1998-10-30 2002-02-12 Stmicroelectronics, Inc. Test mode circuitry for electronic storage devices and the like
US6285243B1 (en) 2000-02-23 2001-09-04 Micron Technology, Inc. High-voltage charge pump circuit
DE102004015269B4 (de) * 2004-03-29 2008-03-27 Infineon Technologies Ag Integrierte Schaltung zur Ermittelung einer Spannung
US9424911B2 (en) * 2014-01-06 2016-08-23 Marvell World Trade Ltd. Method and apparatus for screening memory cells for disturb failures

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH081760B2 (ja) * 1987-11-17 1996-01-10 三菱電機株式会社 半導体記憶装置
EP0367115B1 (de) * 1988-10-31 1994-03-16 Fujitsu Limited Integrierte Schaltung mit einer Signaldiskriminierungsschaltung und Verfahren zu deren Prüfung
US5019772A (en) * 1989-05-23 1991-05-28 International Business Machines Corporation Test selection techniques
KR940004408B1 (ko) * 1991-08-23 1994-05-25 삼성전자 주식회사 반도체 메모리 장치의 자동 스트레스 모드 테스트장치
US5212442A (en) * 1992-03-20 1993-05-18 Micron Technology, Inc. Forced substrate test mode for packaged integrated circuits
JP2885597B2 (ja) * 1993-03-10 1999-04-26 株式会社東芝 半導体メモリ
JPH0773062A (ja) * 1993-06-29 1995-03-17 Fujitsu Ltd 半導体集積回路装置
US5467306A (en) * 1993-10-04 1995-11-14 Texas Instruments Incorporated Method of using source bias to increase threshold voltages and/or to correct for over-erasure of flash eproms
US5493532A (en) * 1994-05-31 1996-02-20 Sgs-Thomson Microelectronics, Inc. Integrated circuit memory with disabled edge transition pulse generation during special test mode
US5627485A (en) * 1995-06-26 1997-05-06 Micron Technology, Inc. Voltage-independent super voltage detection circuit

Also Published As

Publication number Publication date
EP0932904B1 (de) 2002-01-02
EP0932904A1 (de) 1999-08-04
KR100319029B1 (ko) 2002-01-05
AU4985697A (en) 1998-05-15
WO1998018134A1 (en) 1998-04-30
JP2000504457A (ja) 2000-04-11
DE69709889D1 (de) 2002-02-28
KR20000052681A (ko) 2000-08-25
DE69709889T2 (de) 2002-09-05
JP3413446B2 (ja) 2003-06-03
US5841714A (en) 1998-11-24

Similar Documents

Publication Publication Date Title
ATE336007T1 (de) Integrierte schaltung mit testinterface
KR930020852A (ko) 반도체 집적 회로 장치
KR940017215A (ko) 과전압 보호기능을 지니는 저(low)전압 입력 및 출력회로
ES2098385T3 (es) Procedimiento para comprobar circuitos de conmutacion semiconductores integrados, soldados con pletinas, y el uso de un probador de transistores para este procedimiento.
KR880012008A (ko) 전원절환회로
KR930008868A (ko) 시험회로를 내장한 기억용 반도체 집적회로
ATE211577T1 (de) Überspannungsdetektionsschaltung zur auswahl der prüfbetriebsart
US5367491A (en) Apparatus for automatically initiating a stress mode of a semiconductor memory device
EP0905605A3 (de) Schaltung als Einschaltdetektor mit schneller Abschaltfeststellung
KR900019324A (ko) A.c. 대 저 전압 d.c. 변환기
KR900011152A (ko) 전원전압 강하검파 및 초기화회로 재설정 회로
DE50115381D1 (de) Verfahren zur Prüfung von einer integrierten Schaltung
GB2350503A (en) Dynamic bias circuitry utilizing early voltage clamp and translinear techniques
US7439796B2 (en) Current mirror with circuitry that allows for over voltage stress testing
TR199901818T2 (xx) Radyo yap�s�.
US3995175A (en) High impedance voltage probe
KR910015057A (ko) 반도체집적회로
US6201320B1 (en) Automatic power turn-on circuit for a battery-powered voltage measurement apparatus
TWI256122B (en) Integrated circuit and associated packaged integrated circuit
ATE222415T1 (de) Schutzschaltung auf einer integrierten schaltung
US4675550A (en) Mode detection circuit for a dual purpose analog input
KR940026953A (ko) 반도체 메모리 장치
KR930008854A (ko) 반도체 메모리의 내부전압공급장치
KR960027331A (ko) 버퍼회로 및 바이어스회로
HUP0203926A2 (hu) Feszültségszint-eltoló áramkör