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ATE115292T1 - Verfahren für nichtinvasive charakterisierung von halbleitern. - Google Patents

Verfahren für nichtinvasive charakterisierung von halbleitern.

Info

Publication number
ATE115292T1
ATE115292T1 AT89300496T AT89300496T ATE115292T1 AT E115292 T1 ATE115292 T1 AT E115292T1 AT 89300496 T AT89300496 T AT 89300496T AT 89300496 T AT89300496 T AT 89300496T AT E115292 T1 ATE115292 T1 AT E115292T1
Authority
AT
Austria
Prior art keywords
semiconductor
reference electrode
spv
photovoltage
charge
Prior art date
Application number
AT89300496T
Other languages
English (en)
Inventor
Emil Kamieniecki
Michael Wollowitz
William C Goldfarb
Original Assignee
Semitest Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/145,923 external-priority patent/US4827212A/en
Priority claimed from US07/171,677 external-priority patent/US4891584A/en
Application filed by Semitest Inc filed Critical Semitest Inc
Application granted granted Critical
Publication of ATE115292T1 publication Critical patent/ATE115292T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
AT89300496T 1988-01-20 1989-01-19 Verfahren für nichtinvasive charakterisierung von halbleitern. ATE115292T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/145,923 US4827212A (en) 1988-01-20 1988-01-20 Noninvasive method and apparatus for characterization of semiconductors
US07/171,677 US4891584A (en) 1988-03-21 1988-03-21 Apparatus for making surface photovoltage measurements of a semiconductor
US28079388A 1988-12-07 1988-12-07

Publications (1)

Publication Number Publication Date
ATE115292T1 true ATE115292T1 (de) 1994-12-15

Family

ID=27386338

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89300496T ATE115292T1 (de) 1988-01-20 1989-01-19 Verfahren für nichtinvasive charakterisierung von halbleitern.

Country Status (3)

Country Link
EP (1) EP0325453B1 (de)
AT (1) ATE115292T1 (de)
DE (1) DE68919716T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453703A (en) * 1993-11-29 1995-09-26 Semitest Inc. Method for determining the minority carrier surface recombination lifetime constant (ts of a specimen of semiconductor material
DE19747376A1 (de) * 1997-10-27 1999-05-06 E & H Eichhorn & Hausmann Gmbh Verfahren und Vorrichtung zum kapazitiven Messen des Abstands von einer Halbleiteroberfläche
DE19840200A1 (de) 1998-09-03 2000-03-09 Wacker Chemie Gmbh Klassiervorrichtung
DE102010033705B4 (de) * 2010-08-06 2016-06-09 X-Fab Semiconductor Foundries Ag Testsystem und Verfahren zur Charakterisierung von Magnetfeldsensoren im Verbund mit Halbleiterscheiben
CN109142894B (zh) * 2018-07-05 2020-11-24 清华大学 基于耦合等势原理的直流导线电晕空间电荷分布的测试方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3116611C2 (de) * 1980-05-01 1985-05-15 Hitachi, Ltd., Tokio/Tokyo Vorrichtung zur Messung von Halbleitereigenschaften
US4333051A (en) * 1980-05-28 1982-06-01 Rca Corporation Method and apparatus for determining minority carrier diffusion length in semiconductors
US4563642A (en) * 1981-10-09 1986-01-07 Hitachi, Ltd. Apparatus for nondestructively measuring characteristics of a semiconductor wafer with a junction
US4544887A (en) * 1982-10-21 1985-10-01 Gte Laboratories Incorporated Method of measuring photo-induced voltage at the surface of semiconductor materials

Also Published As

Publication number Publication date
EP0325453A2 (de) 1989-07-26
EP0325453B1 (de) 1994-12-07
DE68919716T2 (de) 1995-07-20
EP0325453A3 (en) 1989-08-23
DE68919716D1 (de) 1995-01-19

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