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AT320025B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
AT320025B
AT320025B AT576469A AT576469A AT320025B AT 320025 B AT320025 B AT 320025B AT 576469 A AT576469 A AT 576469A AT 576469 A AT576469 A AT 576469A AT 320025 B AT320025 B AT 320025B
Authority
AT
Austria
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
AT576469A
Other languages
German (de)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT320025B publication Critical patent/AT320025B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121BJTs having built-in components
    • H10D84/125BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
AT576469A 1968-06-21 1969-06-18 Semiconductor device AT320025B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6808722.A NL164703C (en) 1968-06-21 1968-06-21 SEMICONDUCTOR DEVICE, CONTAINING A CONTACT WITH AT LEAST TWO SECTIONS AND A COMMON SECTION FOR THESE SECTIONS, INCLUDING A SERIES OF THE SERIES ON EACH PART OF THE CONNECTION OF THE COMMUNITY SECTION.

Publications (1)

Publication Number Publication Date
AT320025B true AT320025B (en) 1975-01-27

Family

ID=19803953

Family Applications (1)

Application Number Title Priority Date Filing Date
AT576469A AT320025B (en) 1968-06-21 1969-06-18 Semiconductor device

Country Status (8)

Country Link
JP (1) JPS5513587B1 (en)
AT (1) AT320025B (en)
BR (1) BR6909999D0 (en)
CH (1) CH501998A (en)
FR (1) FR2011431A1 (en)
GB (2) GB1278442A (en)
NL (1) NL164703C (en)
SE (1) SE342113B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0148620A1 (en) * 1983-12-27 1985-07-17 Kabushiki Kaisha Toshiba Image sensing device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7002117A (en) * 1970-02-14 1971-08-17
JPS5818964A (en) * 1981-07-28 1983-02-03 Fujitsu Ltd semiconductor equipment
DE3329241A1 (en) * 1983-08-12 1985-02-21 Siemens AG, 1000 Berlin und 8000 München POWER TRANSISTOR
NL8403111A (en) * 1984-10-12 1986-05-01 Philips Nv METHOD FOR MANUFACTURING A BIPOLAR TRANSISTOR WITH EMITTER SERIES, AND TRANSISTOR MANUFACTURED BY THE METHOD
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor
US5298785A (en) * 1987-05-15 1994-03-29 Fuji Electric Co., Ltd. Semiconductor device
FR2615326B1 (en) * 1987-05-15 1990-08-31 Fuji Electric Co Ltd MULTI-TRANSMITTER-TYPE SEMICONDUCTOR DEVICE
JPH0320953U (en) * 1989-07-11 1991-02-28
JPH07109831B2 (en) * 1990-01-25 1995-11-22 株式会社東芝 Semiconductor device
JP4949650B2 (en) * 2005-07-13 2012-06-13 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method of semiconductor device
US9331642B2 (en) 2014-06-27 2016-05-03 Freescale Semiconductor, Inc. Monolithic transistor circuits with tapered feedback resistors, RF amplifier devices, and methods of manufacture thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL296170A (en) * 1962-10-04
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3506886A (en) * 1965-03-08 1970-04-14 Itt High power transistor assembly
FR1475075A (en) * 1965-03-08 1967-03-31 Int Standard Electric Corp High power semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0148620A1 (en) * 1983-12-27 1985-07-17 Kabushiki Kaisha Toshiba Image sensing device

Also Published As

Publication number Publication date
NL6808722A (en) 1969-12-23
FR2011431A1 (en) 1970-02-27
NL164703C (en) 1981-01-15
NL164703B (en) 1980-08-15
GB1278442A (en) 1972-06-21
CH501998A (en) 1971-01-15
SE342113B (en) 1972-01-24
DE1802899B2 (en) 1975-04-24
DE1802899A1 (en) 1970-02-26
BR6909999D0 (en) 1973-01-02
GB1278443A (en) 1972-06-21
JPS5513587B1 (en) 1980-04-10

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee