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The ILD detector is proposed for an electron-positron collider with collision centre-of-mass energies from 90~\GeV~to about 1~\TeV. It has been developed over the last 10 years by an international team of scientists with the goal to... more
The ILD detector is proposed for an electron-positron collider with collision centre-of-mass energies from 90~\GeV~to about 1~\TeV. It has been developed over the last 10 years by an international team of scientists with the goal to design and eventually propose a fully integrated detector, primarily for the International Linear Collider, ILC. In this report the fundamental ideas and concepts behind the ILD detector are discussed and the technologies needed for the realisation of the detector are reviewed. The document starts with a short review of the science goals of the ILC, and how the goals can be achieved today with the detector technologies at hand. After a discussion of the ILC and the environment in which the experiment will take place, the detector is described in more detail, including the status of the development of the technologies foreseen for each subdetector. The integration of the different sub-systems into an integrated detector is discussed, as is the interface b...
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The International Large Detector, ILD, is a detector concept which has been developed for the electron-positron collider ILC. The detector has been optimized for precision physics in a range of energies between 90 GeV and 1 TeV. ILD... more
The International Large Detector, ILD, is a detector concept which has been developed for the electron-positron collider ILC. The detector has been optimized for precision physics in a range of energies between 90 GeV and 1 TeV. ILD features a high precision, large volume combined silicon and gaseous tracking system, together with a high granularity calorimeter, all inside a 3.5 T solenoidal magnetic field. The paradigm of particle flow has been the guiding principle of the design of ILD. In this document the required performance of the detector, the proposed implementation and the readiness of the different technologies needed for the implementation are discussed. This is done in the framework of the ILC collider proposal, now under consideration in Japan, and includes site specific aspects needed to build and operate the detector at the proposed ILC site in Japan.
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CMOS sensors are being developed to equip a vertex detector offering the perfomances required for the physics programme at the International Linear Collider. The progress realised from Spring 2003 to Spring 2005 is exposed in this report.... more
CMOS sensors are being developed to equip a vertex detector offering the perfomances required for the physics programme at the International Linear Collider. The progress realised from Spring 2003 to Spring 2005 is exposed in this report. It addresses the exploration of new fabrication processes, the design of fast integrated signal processing micro-circuits, the assessment and improvement of the radiation tolerance, the reduction of the power dissipation, the thinning of the sensors, the design of a light mechanical support and cooling studies. Progresses were also achieved on a detector design exploiting the features of CMOS sensors. Since several performance requirements are dictated by the beamstrahlung electron rate, the latter was revisited and assessed with improved accuracy. The constraints coming out from this study are significantly more stringent than those written in the TESLA TDR.
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A novel Monolithic Active Pixel Sensor (MAPS) for charged particle tracking is presented. The partially depleted thin epitaxial layer of a low-resistivity silicon wafer is used as a sensitive detector volume from which the charge... more
A novel Monolithic Active Pixel Sensor (MAPS) for charged particle tracking is presented. The partially depleted thin epitaxial layer of a low-resistivity silicon wafer is used as a sensitive detector volume from which the charge liberated by ionising particles is collected by diffusion. The sensor is a photodiode within a special structure allowing the high detection efficiency required for tracking applications. Two prototypes have been designed and fabricated using standard 0.6 and 0.35micron CMOS processes. Results of the first prototype are presented, which is made of four arrays, each containing 64×64 pixels with a readout pitch of 20 microns in both directions. Extensive tests made with a soft X-ray source (Fe) and beams of minimum ionising particles (pions of 15 and 120 GeV/c) at CERN have demonstrated the predicted performance. The individual pixel noise of around 12 ENC leads to an extremely favourable signal to noise ratio for minimum ionising particles for which over 100...
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CMOS Monolithic Active Pixel Sensors (MAPS) have demonstrated their strong potential for tracking devices, particularly for flavour tagging. They are foreseen to equip several vertex detectors and beam telescopes. Most applications... more
CMOS Monolithic Active Pixel Sensors (MAPS) have demonstrated their strong potential for tracking devices, particularly for flavour tagging. They are foreseen to equip several vertex detectors and beam telescopes. Most applications require high read-out speed, imposing sensors to feature digital output with integrated zero suppression. The most recent development of MAPS at IPHC and IRFU addressing this issue will be reviewed. An architecture will be presented, combining a pixel array, column-level discriminators and zero suppression circuits. Each pixel features a preamplifier and a correlated double sampling (CDS) micro-circuit reducing the temporal and fixed pattern noises. The sensor is fully programmable and can be monitored. It will equip experimental apparatus starting data taking in 2009/2010.
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The APVD[1,2], an integrated circuit for the front-end electronics of DC-coupled silicon detectors has been developed and produced in the radiation-hard process DMILL for the CMS experiment. This paper reports very briefly on the final... more
The APVD[1,2], an integrated circuit for the front-end electronics of DC-coupled silicon detectors has been developed and produced in the radiation-hard process DMILL for the CMS experiment. This paper reports very briefly on the final test results, more details will be published elsewhere. I. SUMMARY The APVD_DC contains, like other members of the APV[3] family 128 identical analogue channels, each com-posed of a low noise preamplifier, a CR-RC shaper, an analogue pipeline of 160 cells and a signal processing stage[1,2]. A current compensation circuit is added in every preamplifier to sink the leakage current coming from a DC coupled silicon detector. The circuit has been tested and measured in the presence of significant DC-currents up to 11 microampere, without deterioration of the analogue performance of the circuit like pulse shape or dynamic range. The noise increases by about 300 ENC as is shown in figure 1, small compared to the additional shot-noise. Figure 1: The measured ...
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Designed and manufactured in a commercial CMOS 0.35 μm OPTO process for equipping the EUDET beam telescope, MIMOSA26 is the first reticule size pixel sensor with digital output and integrated zero suppression. It features a matrix of... more
Designed and manufactured in a commercial CMOS 0.35 μm OPTO process for equipping the EUDET beam telescope, MIMOSA26 is the first reticule size pixel sensor with digital output and integrated zero suppression. It features a matrix of pixels with 576 rows and 1152 columns, covering an active area of ~224 mm. A single point resolution of about 4 μm was obtained with a pixel pitch of 18.4 μm. Its architecture allows a fast readout frequency of ~10 k frames/s. The paper describes the chip design, test and major characterisation outcome.
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The APVD_DC realised in the DMILL technology is a radiation-hard integrated circuit for front-end readout electronics of the silicon tracker of CMS. DC-coupled silicon microstrip detectors have significant economical advantages compared... more
The APVD_DC realised in the DMILL technology is a radiation-hard integrated circuit for front-end readout electronics of the silicon tracker of CMS. DC-coupled silicon microstrip detectors have significant economical advantages compared to AC-coupled devices mainly due to their less complex fabrication process and better yield. The APVD_DC allows the use of DCcoupled silicon detectors with significant leakage currents as it is expected due to irradiation after several years of LHC operation. In this paper, a solution is presented with an active individual leakage current compensation technique for each input channel. The APVD_DC contains 128 identical analogue channels, each one composed of a low noise preamplifier, a CR-RC shaper, a 160 cells-deep analogue pipeline and an analogue signal processing stage. A deconvolution filter at the latest stage recuperates the initial fast response function of a silicon detector and confines it to one LHC bunch crossing. The 128 analogue channel...
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International audienc
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... J. Baudot, G. Bertolone, A. Brogna, G. Claus, C. Colledani, R. De Masi, A. Dorokhov, W. Dulinski, M. Goffe, A. Himmi, C. Hu-Guo, K. Jaaskelainen, F. Morel, M ... TABLE 1: CHARACTERISTICS OF MIMOSA22-BIS RAD-TOL PIXEL SUB-ARRAYS... more
... J. Baudot, G. Bertolone, A. Brogna, G. Claus, C. Colledani, R. De Masi, A. Dorokhov, W. Dulinski, M. Goffe, A. Himmi, C. Hu-Guo, K. Jaaskelainen, F. Morel, M ... TABLE 1: CHARACTERISTICS OF MIMOSA22-BIS RAD-TOL PIXEL SUB-ARRAYS Sub-array Diode Surface (μm²) ...
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CMOS Monolithic Active Pixel Sensors (MAPS) demonstrate excellent performances in the field of charged particle tracking. A single point resolution of 1-2 mum and a detection efficiency close to 100% were routinely observed with various... more
CMOS Monolithic Active Pixel Sensors (MAPS) demonstrate excellent performances in the field of charged particle tracking. A single point resolution of 1-2 mum and a detection efficiency close to 100% were routinely observed with various MAPS designs featuring up to 106 pixels on active areas as large as 4 cm2[1]. Those features make MAPS an interesting technology for vertex detectors
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ABSTRACT Solid state solutions for imaging are mainly represented by CCDs and, more recently, by CMOS imagers. Both devices are based on the integration of the total charge generated by the impinging radiation, with no processing of the... more
ABSTRACT Solid state solutions for imaging are mainly represented by CCDs and, more recently, by CMOS imagers. Both devices are based on the integration of the total charge generated by the impinging radiation, with no processing of the single photon information. The dynamic range of these devices is intrinsically limited by the finite value of noise. Here we present the design of an architecture which allows efficient, in-pixel, noise reduction to a practically zero level, thus allowing infinite dynamic range imaging. A detailed calculation of the dynamic range is worked out, showing that noise is efficiently suppressed. This architecture is based on the concept of single-photon counting. In each pixel, we integrate both the front-end, low-noise, low-power analog part and the digital part. The former consists of a charge preamplifier, an active filter for optimal noise bandwidth reduction, a buffer and a threshold comparator, and the latter is simply a counter, which can be programmed to act as a normal shift register for the readout of the counters' contents. Two different ASIC's based on this concept have been designed for different applications. The first one has been optimized for silicon edge-on microstrips detectors, used in a digital mammography R and D project. It is a 32-channel circuit, with a 16-bit binary static counter.It has been optimized for a relatively large detector capacitance of 5 pF. Noise has been measured to be equal to 100 + 7*Cd (pF) electron rms with the digital part, showing no degradation of the noise performances with respect to the design values. The power consumption is 3.8mW/channel for a peaking time of about 1 microsecond(s) . The second circuit is a prototype for pixel imaging. The total active area is about (250 micrometers )**2. The main differences of the electronic architecture with respect to the first prototype are: i) different optimization of the analog front-end part for low-capacitance detectors, ii) in- pixel 4-bit comparator-offset compensation, iii) 15-bit pseudo-random counter. The power consumption is 255 (mu) W/channel for a peaking time of 300 ns and an equivalent noise charge of 185 + 97*Cd electrons rms. Simulation and experimental result as well as imaging results will be presented.
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AbstractThe use of CMOS Monolithic Active Pixel Sensors for high precision minimum ionizing particle tracking has been proven to be a viable and powerful novel experimental technique. In this approach a lightly doped thin and partially... more
AbstractThe use of CMOS Monolithic Active Pixel Sensors for high precision minimum ionizing particle tracking has been proven to be a viable and powerful novel experimental technique. In this approach a lightly doped thin and partially depleted silicon epitaxial layer is used ...
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A new generation of semi-conducting pixel sensors for detecting minimum ionising particles (mip) was designed and first prototypes were fabricated in a standard CMOS technology, guided by the very high vertex detector performances... more
A new generation of semi-conducting pixel sensors for detecting minimum ionising particles (mip) was designed and first prototypes were fabricated in a standard CMOS technology, guided by the very high vertex detector performances demanded in future collider experiments. ...
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CMOS pixel sensors are a very attractive solution for future vertex detectors needing very high granularity and minimal material budget. The first prototypes, made of small arrays of a few thousands of pixels, demonstrated the viability... more
CMOS pixel sensors are a very attractive solution for future vertex detectors needing very high granularity and minimal material budget. The first prototypes, made of small arrays of a few thousands of pixels, demonstrated the viability of the technology and its high tracking performances. The latter could be reproduced with the first reticle sized prototype. An alternative manufacturing technology, without
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ABSTRACT A detector, equipped with 50 μm thin CMOS Pixel Sensors (CPS), is being designed for the upgrade of the Inner Tracking System (ITS) of the ALICE experiment at LHC. Two CPS flavours, MISTRAL and ASTRAL, are being developed at IPHC... more
ABSTRACT A detector, equipped with 50 μm thin CMOS Pixel Sensors (CPS), is being designed for the upgrade of the Inner Tracking System (ITS) of the ALICE experiment at LHC. Two CPS flavours, MISTRAL and ASTRAL, are being developed at IPHC aiming to meet the requirements of the ITS upgrade. The first is derived from the MIMOSA28 sensor designed for the STAR-PXL detector. The second integrates a discriminator in each pixel to improve the readout speed and power consumption. This paper will describe in details the sensor development and show some preliminary test results.
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A prototype readout system for the STAR PIXEL detector in the Heavy Flavor Tracker (HFT) vertex detector upgrade is presented. The PIXEL detector is a Monolithic Active Pixel Sensor (MAPS) based silicon pixel vertex detector fabricated in... more
A prototype readout system for the STAR PIXEL detector in the Heavy Flavor Tracker (HFT) vertex detector upgrade is presented. The PIXEL detector is a Monolithic Active Pixel Sensor (MAPS) based silicon pixel vertex detector fabricated in a commercial CMOS process that integrates the detector and front-end electronics layers in one silicon die. Two generations ofMAPS prototypes designed specifically for the PIXEL are discussed. We have constructed a prototype telescope system consisting of three small MAPS sensors arranged in three parallel and coaxial planes with a readout system based on the readout architecture for PIXEL. This proposed readout architecture is simple and scales to the size required to readout the final detector. The real-time hit finding algorithm necessary for data rate reduction in the 400 million pixel detector is described, and aspects of the PIXEL system integration into the existing STAR framework are addressed. The complete system has been recently tested a...
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The final sensor developed for the EUDET beam telescope has been fabricated and sucessfully tested during the last year. The sensor performances were assessed in the laboratory and by running simultaneously up to 6 sensors on a minimum... more
The final sensor developed for the EUDET beam telescope has been fabricated and sucessfully tested during the last year. The sensor performances were assessed in the laboratory and by running simultaneously up to 6 sensors on a minimum ionising particle beam at the CERN SPS. The results obtained validate the sensors fully for their use in the telescope.
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Future high energy physics (HEP) experiments require detectors with unprecedented performances for track and vertex reconstruction. These requirements call for high precision sensors, with low material budget and short integration time.... more
Future high energy physics (HEP) experiments require detectors with unprecedented performances for track and vertex reconstruction. These requirements call for high precision sensors, with low material budget and short integration time. The development of CMOS sensors for HEP applications was initiated at IPHC Strasbourg more than 10 years ago, motivated by the needs for vertex detectors at the International Linear
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CMOS pixel sensors are foreseen to equip the vertex detector (called PXL) of the upgraded inner tracking system of the STAR experiment at RHIC. The sensors (called ULTIMATE) are being designed and their architecture is being optimized for... more
CMOS pixel sensors are foreseen to equip the vertex detector (called PXL) of the upgraded inner tracking system of the STAR experiment at RHIC. The sensors (called ULTIMATE) are being designed and their architecture is being optimized for the PXL specifications, extrapolating from the MIMOSA-26 sensor realized for the EUDET beam telescope.The paper gives an overview of the ULTIMATE sensor
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Nuclear Instruments and Methods in Physics Research A 511 (2003) 124–131 ... W. Adam a , B. Bellini t , E. Berdermann b , P. Bergonzo c , W. de Boer d , F. Bogani e , ... E. Borchi f , A. Brambilla c , M. Bruzzi f, *, C. ...
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A novel monolithic active pixel sensor for charged particle tracking has been designed and fabricated in a standard CMOS technology. The device architecture is identical to a CMOS camera, recently being proposed as an alternative to CCD... more
A novel monolithic active pixel sensor for charged particle tracking has been designed and fabricated in a standard CMOS technology. The device architecture is identical to a CMOS camera, recently being proposed as an alternative to CCD sensors for visible light imaging. The partially depleted thin epitaxial silicon layer is used as a sensitive detector volume. The sensor is a photodiode having a special structure, which allows the high detection efficiency required for tracking applications A first prototype was made of four arrays each containing 64×64 pixels, with a readout pitch of 20μm in both directions. An architecture allowing serial readout of the analogue information from each pixel has been implemented. To evaluate the tracking performance of such a device, series of tests have been performed using a high-energy particle beam. A detailed analysis of the beam test data presented in this work demonstrate close to 100% minimum ionising particle detection efficiency and a good enough signal-to-noise ratio of more than 30.