Study of Neutron-, Proton-, and Gamma-Irradiated Silicon Detectors Using the Two-Photon Absorption–Transient Current Technique
<p>Sketch of the used table-top TPA-TCT setup.</p> "> Figure 2
<p>(<b>a</b>) Charge versus depth profile of an irradiated (3.32 × 10<sup>14</sup> <math display="inline"><semantics> <mrow> <mrow> <mi mathvariant="normal">n</mi> <mo>/</mo> <mi mathvariant="normal">c</mi> <mi mathvariant="normal">m</mi> </mrow> </mrow> </semantics></math>) <math display="inline"><semantics> <mrow> <mn>156</mn> <mo> </mo> <mrow> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </mrow> </semantics></math> thick p-type planar pad detector. The bias voltage is <math display="inline"><semantics> <mrow> <mn>300</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math>. A comparison of the three different SPA correction methods is shown. The waveform subtraction method is indicated by the index WF, the subtraction method by the index const , and the correction by intensity method by the index I. The uncorrected data are given without index. (<b>b</b>) Time over threshold measurement in the same pad detector, including a comparison of the waveform subtraction and the intensity correction method.</p> "> Figure 3
<p>Current transients recorded in the non-irradiated 21-DS-79 (<b>a</b>), the neutron-irradiated 21-DS-102, and the proton-irradiated 21-DS-92 (<b>b</b>) CiS pad detector. The fluence of the neutron- and proton-irradiated device were 7.02 × 10<sup>15</sup> <math display="inline"><semantics> <mrow> <mrow> <mi mathvariant="normal">n</mi> <mo>/</mo> <mi mathvariant="normal">c</mi> <msup> <mi mathvariant="normal">m</mi> <mn>2</mn> </msup> </mrow> </mrow> </semantics></math> and 1.17 × 10<sup>16</sup> <math display="inline"><semantics> <mrow> <mrow> <mi mathvariant="normal">p</mi> <mo>/</mo> <mi mathvariant="normal">c</mi> <msup> <mi mathvariant="normal">m</mi> <mn>2</mn> </msup> </mrow> </mrow> </semantics></math>, respectively. Positions in the legends refer to positions of the focal point where <math display="inline"><semantics> <mrow> <mn>0</mn> <mo> </mo> <mrow> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </mrow> </semantics></math> corresponds to the top side and <math display="inline"><semantics> <mrow> <mn>156</mn> <mo> </mo> <mrow> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </mrow> </semantics></math> to the back side of the sensor. The measurements were performed at <math display="inline"><semantics> <mrow> <mo>−</mo> <mn>20</mn> <mrow> <mo> </mo> <mo>°</mo> <mi mathvariant="normal">C</mi> </mrow> </mrow> </semantics></math> and 0% relative humidity. The beam parameters were <math display="inline"><semantics> <mrow> <msub> <mi>w</mi> <mn>0</mn> </msub> <mo>=</mo> <mn>1.2</mn> <mo> </mo> <mrow> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <msub> <mi>z</mi> <mi mathvariant="normal">R</mi> </msub> <mo>=</mo> <mn>9.7</mn> <mo> </mo> <mrow> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </mrow> </semantics></math>, and a pulse energy of <math display="inline"><semantics> <mrow> <mn>200</mn> <mo> </mo> <mrow> <mi mathvariant="normal">p</mi> <mi mathvariant="normal">J</mi> </mrow> </mrow> </semantics></math> was used. The laser frequency was <math display="inline"><semantics> <mrow> <mn>200</mn> <mo> </mo> <mi>Hz</mi> </mrow> </semantics></math>, and the average of 256 single acquisitions was recorded. The bias voltage was <math display="inline"><semantics> <mrow> <mn>300</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math>. The signals are shifted on the time axis for better readability.</p> "> Figure 4
<p>In-depth scans of the charge collection in pad detectors for neutron- (<b>a</b>) and proton- (<b>b</b>) irradiated samples. Figure (<b>c</b>,<b>d</b>) show the SPA corrected in-depth scans for neutrons and protons, respectively. The bias voltage is <math display="inline"><semantics> <mrow> <mn>300</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math>.</p> "> Figure 5
<p>Charge collected by SPA in neutron- (<b>a</b>) and proton- (<b>b</b>) irradiated <math display="inline"><semantics> <mrow> <mn>156</mn> <mo> </mo> <mrow> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </mrow> </semantics></math> thick pad sensors. Charge collected by TPA for the same neutron- (<b>c</b>) and proton- (<b>d</b>) irradiated devices. The TPA charge is extracted as the mean of the collected charge between the FWHM of the in-depth scans. The bias voltage for all scans is <math display="inline"><semantics> <mrow> <mn>300</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math>.</p> "> Figure 6
<p>Prompt current at <math display="inline"><semantics> <mrow> <msub> <mi>t</mi> <mi>pc</mi> </msub> <mo>=</mo> <mn>600</mn> <mo> </mo> <mrow> <mi mathvariant="normal">p</mi> <mi mathvariant="normal">s</mi> </mrow> </mrow> </semantics></math> for different bias voltages measured for (<b>a</b>) a neutron fluence of 7.02 × 10<sup>15</sup> <math display="inline"><semantics> <mrow> <mrow> <mi mathvariant="normal">n</mi> <mo>/</mo> <mi mathvariant="normal">c</mi> <msup> <mi mathvariant="normal">m</mi> <mn>2</mn> </msup> </mrow> </mrow> </semantics></math> and (<b>b</b>) a proton fluence of 1.17 × 10<sup>16</sup> <math display="inline"><semantics> <mrow> <mrow> <mi mathvariant="normal">p</mi> <mo>/</mo> <mi mathvariant="normal">c</mi> <msup> <mi mathvariant="normal">m</mi> <mn>2</mn> </msup> </mrow> </mrow> </semantics></math>. The equivalent fluences are comparable. The double junction is clearly visible in both plots. The proton-irradiated sample shows an electric field that grows from, and is stronger at, the back electrode. This effect is often called type inversion .</p> "> Figure 7
<p>(<b>a</b>) In-depth scans of the charge collection in pad detectors. Gamma-irradiated samples and a non-irradiated sample are shown. (<b>b</b>) Comparison between the in-depth scans of a non-irradiated, a neutron-, a proton-, and a gamma-irradiated pad sensor. The bias voltage in all scans is <math display="inline"><semantics> <mrow> <mn>300</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math>.</p> "> Figure 8
<p>(<b>a</b>) In-depth scans of the charge collection in pad detectors. A non-irradiated sample is shown as well as a neutron-, a proton-, and a gamma-irradiated sample. (<b>b</b>) Same in-depth scans, but the SPA offset is corrected by the waveform subtraction method. The bias voltage is <math display="inline"><semantics> <mrow> <mn>300</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math>.</p> "> Figure 9
<p>(<b>a</b>) SPA charge collection normalised with the average electric field versus the equivalent fluence for neutron- and proton-irradiated FZ p-type pad detector. (<b>b</b>) TPA charge collection versus the equivalent fluence and dose for the same DUT.</p> "> Figure 10
<p>Charge collected by SPA normalised with the pulse energy for proton and neutron irradiation in <math display="inline"><semantics> <mrow> <mn>156</mn> <mo> </mo> <mrow> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </mrow> </semantics></math> thick pad detectors, biased to <math display="inline"><semantics> <mrow> <mn>300</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math>. The fit function is of the form <math display="inline"><semantics> <mrow> <mi>C</mi> <mspace width="0.166667em"/> <mo>·</mo> <mspace width="0.166667em"/> <msubsup> <mi mathvariant="sans-serif">Φ</mi> <mrow> <mi>eq</mi> </mrow> <mi mathvariant="normal">a</mi> </msubsup> </mrow> </semantics></math>, with <math display="inline"><semantics> <mrow> <mi>C</mi> <mo>=</mo> <mn>14.3</mn> <mo>×</mo> <msup> <mn>10</mn> <mrow> <mo>−</mo> <mn>11</mn> </mrow> </msup> <mo> </mo> <mrow> <mi mathvariant="normal">c</mi> <msup> <mi mathvariant="normal">m</mi> <mrow> <mn>2</mn> <mi mathvariant="normal">a</mi> </mrow> </msup> <mi mathvariant="normal">f</mi> <mi mathvariant="normal">C</mi> <mo>/</mo> <mi mathvariant="normal">n</mi> <mi mathvariant="normal">J</mi> </mrow> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mi>a</mi> <mo>=</mo> <mrow> <mn>0.84</mn> </mrow> </mrow> </semantics></math>. The highest fluences are excluded from the fit.</p> "> Figure 11
<p>(<b>a</b>) Effective linear absorption coefficient of neutron-irradiated pad detectors versus the bias voltage, which is normalised with the device thickness. (<b>b</b>) Effective linear absorption coefficient for <math display="inline"><semantics> <mrow> <mn>156</mn> <mo> </mo> <mrow> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </mrow> </semantics></math> thick neutron- and proton-irradiated pad detectors versus the equivalent fluence. The value for the maximum bias voltage is used. The absorption coefficient does not saturate for the highest fluences, and the highest applied bias voltage is different for the proton- and neutron-irradiated devices. In order to show comparable <math display="inline"><semantics> <msub> <mi>α</mi> <mi>eff</mi> </msub> </semantics></math> for the highest fluences, a bias voltage of <math display="inline"><semantics> <mrow> <mn>300</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math> is selected. The arrows are used to guide the eye towards the empty markers. These show the <math display="inline"><semantics> <msub> <mi>α</mi> <mi>eff</mi> </msub> </semantics></math> calculated from the interpolated <math display="inline"><semantics> <mrow> <msub> <mi>Q</mi> <mi>SPA</mi> </msub> <mrow> <mo>(</mo> <msub> <mi mathvariant="sans-serif">Φ</mi> <mi>eq</mi> </msub> <mo>)</mo> </mrow> </mrow> </semantics></math> of <a href="#sensors-24-05443-f010" class="html-fig">Figure 10</a>.</p> "> Figure 12
<p>(<b>a</b>) Charge collection of a non-irradiated <math display="inline"><semantics> <mrow> <mn>156</mn> <mo> </mo> <mrow> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </mrow> </semantics></math> thick p-type pad sensor measured in a <sup>90</sup>Sr setup. (<b>b</b>) Charge collection in neutron-irradiated pad sensors for different fluences. The histogram is normalised to the maximum amount of counts to ease the comparison. The bias voltage in all measurements is <math display="inline"><semantics> <mrow> <mn>300</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math>.</p> "> Figure 13
<p>Charge collection efficiency for pad sensors, measured with the TPA-TCT and a <sup>90</sup>Sr setup, against the equivalent fluence. The type of irradiation is mentioned in the legend.</p> "> Figure 14
<p>(<b>a</b>) Time over threshold profiles of the non-irradiated and the irradiated pad detectors. The highest fluences, while avoiding the double junction effect, are used to allow the comparison. The refraction from the air–silicon interface is not corrected in the <span class="html-italic">z</span>-axis. The location of the top and back interface is extracted from the non-irradiated device, and they are indicated by the dashed lines. (<b>b</b>) Refractive index extracted from the in-depth scans of various irradiated pad detectors. The nominal refractive index <math display="inline"><semantics> <mrow> <mi>n</mi> <mo>(</mo> <mn>250</mn> <mo> </mo> <mi mathvariant="normal">K</mi> <mo>)</mo> <mo>=</mo> <mrow> <mn>3.4681</mn> <mo>±</mo> <mn>0.0002</mn> </mrow> </mrow> </semantics></math> is taken from [<a href="#B31-sensors-24-05443" class="html-bibr">31</a>]. All scans are performed with a bias voltage of <math display="inline"><semantics> <mrow> <mn>300</mn> <mo> </mo> <mi mathvariant="normal">V</mi> </mrow> </semantics></math>.</p> ">
Abstract
:1. Introduction
2. Experimental Setup
Devices
3. Influence of Radiation Damage
3.1. Correction of the Single-Photon Absorption Offset
3.2. Influence of Neutron and Proton Irradiation
3.3. Influence of Gamma Irradiation
3.4. Comparison of Neutron, Proton, and Gamma Irradiation
3.5. Beam Depletion Due to SPA
3.6. Influence on the Two-Photon Absorption Coefficient
3.7. Refractive Index
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
Abbreviations
CC | Collected charge |
CCE | Charge collection efficiency |
DUT | Device under test |
FWHM | Full width at half maximum |
MIP | Minimum ionising particle |
MPV | Most probable value |
PCB | Printed circuit board |
SNR | Signal-to-noise ratio |
SPA | Single Photon Absorption |
TCT | Transient Current Technique |
ToT | Time over threshold |
TPA | Two-Photon Absorption |
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Name | Active | Fluence/ | Annealing |
---|---|---|---|
Thickness [μm] | Dose | ||
Pristine | |||
21-DS-79 | – | – | |
25-DS-66 | |||
Neutron [] | |||
21-DS-78 | at and at | ||
21-DS-84 | |||
21-DS-98 | |||
21-DS-99 | |||
21-DS-101 | |||
21-DS-102 | |||
25-DS-104 | |||
25-DS-87 | |||
25-DS-88 | |||
Proton [] | |||
21-DS-97 | at and at | ||
21-DS-96 | |||
21-DS-94 | |||
21-DS-92 | |||
Gamma [] | |||
19-DS-97 | - | ||
19-DS-99 |
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Pape, S.; Fernández García, M.; Moll, M.; Wiehe, M. Study of Neutron-, Proton-, and Gamma-Irradiated Silicon Detectors Using the Two-Photon Absorption–Transient Current Technique. Sensors 2024, 24, 5443. https://doi.org/10.3390/s24165443
Pape S, Fernández García M, Moll M, Wiehe M. Study of Neutron-, Proton-, and Gamma-Irradiated Silicon Detectors Using the Two-Photon Absorption–Transient Current Technique. Sensors. 2024; 24(16):5443. https://doi.org/10.3390/s24165443
Chicago/Turabian StylePape, Sebastian, Marcos Fernández García, Michael Moll, and Moritz Wiehe. 2024. "Study of Neutron-, Proton-, and Gamma-Irradiated Silicon Detectors Using the Two-Photon Absorption–Transient Current Technique" Sensors 24, no. 16: 5443. https://doi.org/10.3390/s24165443