The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures
<p>Schematic illustration of the one-port surface acoustic wave (SAW) resonator and the modeling periodic cell.</p> "> Figure 2
<p>(<b>a</b>) Dependence of the simulated acoustic wave velocity on the normalized thickness of the AlN film and the typical mode schematic diagram of the acoustic waves with different thicknesses of the AlN film. The color corresponds to the displacement amplitude; (<b>b</b>) Dependence of the simulated electromechanical coupling coefficient of the devices on the normalized thickness of the AlN film.</p> "> Figure 3
<p>(<b>a</b>) The simulated propagation loss in region (I); (<b>b</b>) The propagation loss in region (III).</p> "> Figure 4
<p>(<b>a</b>) The photograph of the SAW devices deposited onto AlN/TC4 bilayer; (<b>b</b>) The detailed picture of the electrodes; (<b>c</b>) The cross-section SEM of the AlN/TC4 structure.</p> "> Figure 5
<p>(<b>a</b>) X-ray diffraction (XRD) results of the 3.5 μm thick AlN film. Inset: AlN (002) peak rocking curve of AlN films; (<b>b</b>) Dependence of full width at half maximum (FWHM) values of the AlN films on the normalized thickness of AlN films.</p> "> Figure 6
<p>S<sub>11</sub> parameters of the AlN/TC4 SAW devices. The thicknesses of the AlN films are 1.5 μm, 2.0 μm, 2.5 μm, 3.0 μm, and 3.5 μm, respectively.</p> "> Figure 7
<p>Dependence of experimental (dots) and simulated (dash line) phase velocity on the thickness of AlN films.</p> "> Figure 8
<p>Dependence of the Q-factor and <span class="html-italic">k</span><sup>2</sup> on the normalized thickness of AlN films.</p> "> Figure 9
<p>Dependence of Q-factor and <span class="html-italic">k</span><sup>2</sup> on FWHM where the <span class="html-italic">t<sub>AlN</sub></span> is 2.5 μm. The lines are drawn as a guide for the reader.</p> "> Figure 10
<p>Temperature dependences of the resonance frequency shifts of the prepared AlN/TC4 SAW resonators with different AlN film thicknesses.</p> ">
Abstract
:1. Introduction
2. Design and Simulation
3. Fabrication
4. Results and Discussion
5. Conclusions
Acknowledgments
Author Contributions
Conflicts of Interest
References
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Material | AlN [6] | Ti *[7] | |
---|---|---|---|
density(kg/m3) | 3260 | 4510 | |
elastic constant (GPa) | C11 | 345 | 162.2 |
C12 | 125 | 91.8 | |
C13 | 120 | 69 | |
C33 | 395 | 180.6 | |
C44 | 118 | 46.7 | |
C66 | 110 | 35.2 | |
piezoelectric constant (c/m2) | e15 | −0.48 | … |
e31 | −0.45 | … | |
e33 | 1.55 | … | |
relative permittivity | ε11 | 9 | … |
ε33 | 11 | … |
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Shu, L.; Peng, B.; Li, C.; Gong, D.; Yang, Z.; Liu, X.; Zhang, W. The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures. Sensors 2016, 16, 526. https://doi.org/10.3390/s16040526
Shu L, Peng B, Li C, Gong D, Yang Z, Liu X, Zhang W. The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures. Sensors. 2016; 16(4):526. https://doi.org/10.3390/s16040526
Chicago/Turabian StyleShu, Lin, Bin Peng, Chuan Li, Dongdong Gong, Zhengbing Yang, Xingzhao Liu, and Wanli Zhang. 2016. "The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures" Sensors 16, no. 4: 526. https://doi.org/10.3390/s16040526