Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules
<p>Traditional design optimization approach for MEMS devices.</p> "> Figure 2
<p>The proposed methodology for optimizing capacitive RF MEMS switches.</p> "> Figure 2 Cont.
<p>The proposed methodology for optimizing capacitive RF MEMS switches.</p> "> Figure 3
<p>Methodology of material selection.</p> "> Figure 4
<p>Schematic view of the developed capacitive RF MEMS switches: (<b>a</b>) the one-dimensional model of the displacement of the movable membrane during electrostatic activation; (<b>b</b>) the equivalent electrical model.</p> "> Figure 5
<p>The isometric 3D topology of the developed capacitive RF MEMS switches: (<b>a</b>) switch (A); (<b>b</b>) switch (B).</p> "> Figure 6
<p>The CPW designs: (<b>a</b>) CPW (A) is RF MEMS switch (A); (<b>b</b>) CPW (B) is RF MEMS switch (B).</p> "> Figure 7
<p>Schematic view: (<b>a</b>) CPW (A) is RF MEMS switch (A); (<b>b</b>) CPW (B) is RF MEMS switch (B).</p> "> Figure 8
<p>The distribution of E and H fields in the developed design of CPW (A).</p> "> Figure 9
<p>The distribution of E and H fields in the developed design of CPW (B).</p> "> Figure 10
<p>Distribution graph of CPW (A) and CPW (B) from the frequency RF signal: (<b>a</b>,<b>b</b>) the characteristic resistance <math display="inline"><semantics> <msub> <mi mathvariant="italic">Z</mi> <mn>0</mn> </msub> </semantics></math> and the VSWR of CPW (A); (<b>c</b>,<b>d</b>) the characteristic resistance <math display="inline"><semantics> <msub> <mi mathvariant="italic">Z</mi> <mn>0</mn> </msub> </semantics></math> and the VSWR of CPW (B).</p> "> Figure 11
<p>The results of EM and transient thermal modeling: (<b>a</b>) CPW (A); (<b>b</b>) CPW (B).</p> "> Figure 12
<p>Schematic view of the designs of the movable membranes: (<b>a</b>) switch (A); (<b>b</b>) switch (B).</p> "> Figure 13
<p>Schematic view of the air flow under movable membranes.</p> "> Figure 14
<p>Schematic view of the structures of the fixed down actuation electrodes: (<b>a</b>) switch (A); (<b>b</b>) switch (B).</p> "> Figure 15
<p>The results of EM and transient thermal modeling of CPW (A) and CPW (B) including fixed down actuation electrodes, contact pads and contact lines: (<b>a</b>) switch (A); (<b>b</b>) switch (B).</p> "> Figure 16
<p>Schematic view of the developed zig-zag elastic suspension.</p> "> Figure 17
<p>The results of modeling of electromechanical parameters of switch (A): (<b>a</b>) electrostatic displacement and switching time; (<b>b</b>) distribution of mechanical strain and mechanical stress.</p> "> Figure 18
<p>The results of modeling of electromechanical parameters of switch (B): (<b>a</b>) electrostatic displacement and switching time; (<b>b</b>) distribution of mechanical strain and mechanical stress.</p> "> Figure 19
<p>Schematic view of the developed additional fixed MIM capacitor: (<b>a</b>) switch (A); (<b>b</b>) switch (B).</p> "> Figure 20
<p>The results of EM and transient thermal modeling of CPW (A) and CPW (B) including fixed down actuation electrodes, contact pads, contact lines and MIM capacitor: (<b>a</b>) switch (A); (<b>b</b>) switch (B).</p> "> Figure 21
<p>The results of EM and transient thermal modeling of the developed RF MEMS switch (A): (<b>a</b>) open state; (<b>b</b>) closed state.</p> "> Figure 22
<p>The results of EM and transient thermal modeling of the developed RF MEMS switch (B): (<b>a</b>) open state; (<b>b</b>) closed state.</p> "> Figure 23
<p>The technological layers in the manufacture of experimental samples.</p> "> Figure 24
<p>Photos of the manufacturing process of experimental samples: (<b>a</b>) RF MEMS switch (A); (<b>b</b>) RF MEMS switch (B).</p> "> Figure 25
<p>The manufactured experimental samples of RF MEMS switches: (<b>a</b>) RF MEMS switch (A); (<b>b</b>) RF MEMS switch (B).</p> "> Figure 26
<p>The results of the study of electromagnetic parameters of manufactured experimental samples of RF MEMS switch (A) and RF MEMS switch (B): (<b>a</b>) insertion loss in the open state; (<b>b</b>) reflection loss in the open state; (<b>c</b>) isolation in the closed state.</p> "> Figure 27
<p>Photos of the process of applying capacitor structures in the experimental study of <math display="inline"><semantics> <msub> <mi>TiO</mi> <mn>2</mn> </msub> </semantics></math> thin films.</p> ">
Abstract
:1. Introduction
2. Methodology of Designing High-Performance Capacitive RF MEMS Switches
- -
- High dielectric constant, ;
- -
- Low dielectric loss tangent, ;
- -
- High resistivity, ;
- -
- High thermal conductivity, .
- -
- Functional requirements;
- -
- Geometric properties;
- -
- Properties of the material.
- -
- The first material index = is associated with dielectric loss in the CPW or effective permittivity ;
- -
- The second material index = is related to the tangent of dielectric loss;
- -
- The third material index = and the first performance index = is the value of dielectric loss or attenuation;
- -
- The fourth material index = is the loss of RF power in the substrate, while, since the loss level is directly proportional to the electrical resistivity of the substrate material, the second performance index = is electrical loss;
- -
- The result of the electrical and thermal resistances of the substrate material induces heating of the substrate material, which means that the fifth material index = and the third performance index = are thermal residual stresses.
- -
- The first material index = is related to the value of the Young’s modulus of the material;
- -
- The second material index = is related to the value of the Poisson’s ratio of the material;
- -
- The third material index = is related to the value of the coefficient of thermal expansion of the material;
- -
- The first performance index = is related to the value of the control voltage;
- -
- The fourth material index = and the second performance index = are related to the value of the electrical resistance of the material and the value of the RF loss that occurs;
- -
- The fifth material index = and the third performance index = are related to the thermal conductivity of the material and thermal residual stresses.
- -
- Dielectric constant, ;
- -
- Electrical resistivity, ;
- -
- Thermal conductivity, ;
- -
- Coefficient of thermal expansion, ;
- -
- Young’s modulus, .
- -
- The first material index is related to the value of the dielectric constant of the material = , while the first performance index = is related to the value of the control voltage;
- -
- The second material index = is associated with the value of the electrical resistance and the value of the dielectric constant, while the second performance index = is associated with the electric charge of the dielectric layer ;
- -
- The third material index = is associated with the value of Young’s modulus;
- -
- The fourth material index = is associated with the value of the coefficient of thermal expansion;
- -
- The fifth material index = is associated with the value of the thermal conductivity;
- -
- The third performance index = is related to the efficiency of thermal stress relaxation of the RF MEMS switch ;
- -
- The sixth material index = is related to the value of the dielectric constant, while the fourth performance index = is related to the value of the capacitance ratio and, accordingly, the EM parameters obtained.
3. Proof of Methodology
3.1. Design of Structures
3.1.1. Designs of the Coplanar Waveguide
3.1.2. Designs of the Movable Membranes
3.2. Design of the Actuation Electrodes
3.3. Design of the Elastic Suspension Elements
3.4. Design of the MIM Capacitor
4. Manufacturing Process and Experimental Research
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Material | Electrical | Thermal | Coefficient of |
---|---|---|---|
Resistivity, , | Conductivity, K, | Thermal Expansion, , | |
Aluminum | 222 | 23.6 | |
Gold | 388 | 14.2 | |
Copper | 315 | 17 | |
Platinum | 71 | 9.1 | |
Nickel | 70 | 13.3 |
Material | Dielectric | Electrical | Thermal | Coefficient of | Dielectric |
---|---|---|---|---|---|
Constant | Resistivity | Conductivity | Thermal Expansion | Loss Tangent | |
, | , | , | |||
Quartz | 3.8 | 13.8 | 5.5 | ≈ | |
Glass | 5–10 | ≈ | 80 | 9 | ≈ |
GaAs | 12.8 | – | 35–50 | 5.73 | ≈ |
11.3 | 50 | 4.7 | |||
AlN | 9.2 | ≈ | 32.1 | 5.27 | |
BeO | 6.76 | ≈ | 33 | 8.9 | |
GaN | 8.5 | 25.3 | 5.27 | ≈ | |
InP | 12.4 | 68 | 4.6 | ||
LTCC | 7.3 | 28 | 5.6 | ||
SiC | 9.6 | ≈ | 20.7 | 11 | |
11.7 | 24.7 | 9.2 | ≈ |
Material | Young’s | Poisson’s | Electrical | Thermal | Coefficient of |
---|---|---|---|---|---|
Modulus | Ratio | Resistivity | Conductivity | Thermal Expansion | |
, | , | , | |||
Aluminum | 69 | 0.33 | 222 | 23.6 | |
Gold | 77 | 0.42 | 388 | 14.2 | |
Copper | 115 | 0.33 | 315 | 17 | |
Platinum | 171 | 0.39 | 71 | 9.1 | |
Nickel | 204 | 0.31 | 70 | 13.3 | |
304 | 0.3 | ∼ | 29 | 2.7 | |
Mo | 320 | 0.32 | 142 | 4.9 | |
380 | 0.22 | ∼ | 39 | 7.4 |
Material | Dielectric | Electrical | Thermal | Coefficient of | Young’s |
---|---|---|---|---|---|
Constant | Resistivity | Conductivity | Thermal Expansion | Modulus | |
, | , | , | , | ||
3.8 | 1.4 | 5.6 | 71 | ||
7 | 3 | 9 | 304 | ||
10 | 39 | 7.4 | 380 | ||
AlN | 9.14 | 16 | 7.7 | 330 | |
25 | 1.1 | 6 | 57 | ||
22 | 8 | 6.3 | 140 | ||
80 | 11.7 | 9 | 230 | ||
BST | 800 | 12 | 9.4 | 1000 | |
25 | 3.9 | 9.2 | 200 |
Component | Length, μm | Width, μm | Depth, μm | Material |
---|---|---|---|---|
CPW (A) | 20 | 100 | 20 | Copper |
Substrate | 650 | 400 | 500 | |
CPW (B) | 15 | 140 | 15 | Copper |
Substrate | 900 | 700 | 500 |
Component | Length, μm | Width, μm | Thickness, μm | Material |
---|---|---|---|---|
Movable membrane | 200 | 60 | 1 | |
Left part | 80 | 60 | 1 | Aluminum |
Central part | 40 | 20 | 1 | |
Right part | 80 | 60 | 1 | |
Holes | ||||
Form | Dimensions, μm | Numbers | ||
Circle | 3 | 7 | 152 | |
Movable membrane | 200 | 60 | 1 | |
Left part | 60 | 60 | 1 | Aluminum |
Central part | 80 | 20 | 1 | |
Right part | 60 | 60 | 1 | |
Holes | ||||
Form | Dimensions, μm | Numbers | ||
Square | 6 | 8 | 68 |
Component | Length, μm | Width, μm | Thickness, μm | Material |
---|---|---|---|---|
135 | 80 | 1 | ||
105 | 10 | 1 | ||
30 | 10 | 1 | Aluminum | |
80 | 10 | 1 | ||
21.52 | 0.175 | 3.5 | 6.35 | 3.1 |
135 | 80 | 1 | ||
105 | 10 | 1 | ||
30 | 10 | 1 | Aluminum | |
80 | 10 | 1 | ||
19.35 | 0.15 | 5 | 6.5 | 3.2 |
1 | 37.25 | 80 | 0.2 | 14.901 | ||
1 | 116.5 | 80 | 0.2 | 46.601 |
Parameters | [59] | [60] | [61] | [62] | [63] | [64] | This Work |
---|---|---|---|---|---|---|---|
Lateral | Vertical | Lateral | Lateral | Vertical | Latching | Vertical | |
, V | 57 | 75 | 15 | 32.6 | 26 | 38 | 3.5/5 |
Q | – | – | – | – | – | – | 0.7 |
– | – | – | – | – | – | ||
, μs | 56 | 10 | 120 | – | 25 | 39.5 | 6.35/6.5 |
, μs | 40 | 5 | 150 | – | 13 | 94.8 | 3.1/3.2 |
, | 1.5 | 1–2 | – | – | – | 0.7/0.62 | |
Sub | Sub | Sub | 1–10 | DC-30 | DC-20 | S-/ | |
6 GHz | 6 GHz | 6 GHz | GHz | GHz | GHz | C-, X-, Ku | |
– | – | – | – | – | – | 14,901/46,601 | |
Open state | |||||||
Theoretical | |||||||
, dB | −0.28 | −0.28 | −0.31 | −0.13 | −0.18 | −1.8 | −0.07/−0.16 |
Experiment | |||||||
−0.69/−0.66 | |||||||
(@GHz) | @6 | @6 | @6 | @6 | @2 | @6 | @3.6/@3.4 |
Theoretical | |||||||
, dB | – | – | – | – | – | – | -41.17/-30.8 |
Experiment | |||||||
−28.35/−20.66 | |||||||
(@GHz) | @3.6/@3.4 | ||||||
Closed state | |||||||
Theoretical | |||||||
, dB | −38.4 | −31 | −36 | −24.96 | −38.8 | −33.18 | −42.2/−54.9 |
Experiment | |||||||
−54.77/−52.13 | |||||||
(@GHz) | @6 | @6 | @6 | @6 | @2 | @6 | @3.6/@3.4 |
, W | – | – | – | – | – | – | >1 |
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Share and Cite
Tkachenko, A.; Lysenko, I.; Kovalev, A. Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules. Micromachines 2023, 14, 477. https://doi.org/10.3390/mi14020477
Tkachenko A, Lysenko I, Kovalev A. Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules. Micromachines. 2023; 14(2):477. https://doi.org/10.3390/mi14020477
Chicago/Turabian StyleTkachenko, Alexey, Igor Lysenko, and Andrey Kovalev. 2023. "Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules" Micromachines 14, no. 2: 477. https://doi.org/10.3390/mi14020477