Abstract
Graphene has significant potential for application in electronics1,2,3,4,5, but cannot be used for effective field-effect transistors operating at room temperature because it is a semimetal with a zero bandgap6,7. Processing graphene sheets into nanoribbons with widths of less than 10 nm can open up a bandgap that is large enough for room-temperature transistor operation8,9,10,11,12,13,14,15,16,17,18,19, but nanoribbon devices often have low driving currents or transconductances18,19. Moreover, practical devices and circuits will require the production of dense arrays of ordered nanoribbons, which remains a significant challenge20,21. Here, we report the production of a new graphene nanostructure—which we call a graphene nanomesh—that can open up a bandgap in a large sheet of graphene to create a semiconducting thin film. The nanomeshes are prepared using block copolymer lithography and can have variable periodicities and neck widths as low as 5 nm. Graphene nanomesh field-effect transistors can support currents nearly 100 times greater than individual graphene nanoribbon devices, and the on–off ratio, which is comparable with the values achieved in individual nanoribbon devices, can be tuned by varying the neck width. The block copolymer lithography approach used to make the nanomesh devices is intrinsically scalable and could allow for the rational design and fabrication of graphene-based devices and circuits with standard semiconductor processing.
This is a preview of subscription content, access via your institution
Access options
Subscribe to this journal
Receive 12 print issues and online access
$259.00 per year
only $21.58 per issue
Buy this article
- Purchase on SpringerLink
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout




Similar content being viewed by others
References
Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004).
Scott Bunch, J., Yaish, Y., Brink, M., Bolotin, K. & McEuen, P. L. Coulomb oscillations and Hall effect in quasi-2D graphite quantum dots. Nano Lett. 5, 287–290 (2005).
Zhang, Y. B., Tan, Y. W., Stormer, H. L. & Kim, P. Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature 438, 201–204 (2005).
Geim, A. K. & Novoselov, K. S. The rise of graphene. Nature Mater. 6, 183–191 (2007).
Tan, Y.-W., Zhang, Y., Stormer, H. L. & Kim, P. Temperature dependent electron transport in graphene. Eur. Phys. J. Spec. Top. 148, 15–18 (2007).
Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197–200 (2005).
Meric, I., Han, M. Y., Young, A. F., Ozyilmaz, B., Kim, P. & Shepard, K. L. Current saturation in zero-bandgap, topgated graphene field-effect transistors. Nature Nanotech. 3, 654–659 (2008).
Nakada, K., Fujita, M., Dresselhaus, G. & Dresselhaus, M. S. Edge state in graphene ribbons: nanometer size effect and edge shape dependence. Phys. Rev. B 54, 17954–17961 (1996).
Son, Y.-W., Cohen, M. L. & Louie, S. G. Energy gaps in graphene nanoribbons. Phys. Rev. Lett. 97, 216803 (2006).
Barone, V., Hod, O. & Scuseria, G. E. Electronic structure and stability of semiconducting graphene nanoribbons. Nano Lett. 6, 2748–2754 (2006).
Li, T. C. & Lu, S.-P. Quantum conductance of graphene nanoribbons with edge defects. Phys. Rev. B 77, 085408 (2008).
Sols, F., Guinea, F. & Castro Neto, A. H. Coulomb blockade in graphene nanoribbons. Phys. Rev. Lett. 99, 166803 (2007).
Han, M. Y., Ozyilmaz, B., Zhang, Y. & Kim, P. Energy band-gap engineering of graphene nanoribbons. Phys. Rev. Lett. 98, 206805 (2007).
Ozyilmaz, B., Jarillo-Herrero, P., Efetov, D. & Kim, P. Electronic transport in locally gated graphene nanoconstrictions. Appl. Phys. Lett. 91, 192107 (2007).
Chen, Z. H., Lin, Y.-M., Rookes, M. J. & Avouris, P. Graphene nano-ribbon electronics. Physica E 40, 228–232 (2007).
Li, X. L., Wang, X. R., Zhang, L., Lee, S. & Dai, H. J. Chemically derived, ultrasmooth graphene nanoribbon semiconductors. Science 319, 1229–1232 (2008).
Kosynkin, D. V. et al. Longitudinal unzipping of carbon nanotubes to form graphene nanoribbons. Nature 459, 872–876 (2009).
Jiao, L. Y., Zhang, L., Wang, X. R., Diankov, G. & Dai, H. J. Narrow graphene nanoribbons from carbon nanotubes. Nature 458, 877–880 (2009).
Bai, J., Duan, X. & Huang, Y. Rational fabrication of graphene nanoribbons using a nanowire etch mask. Nano Lett. 9, 2083–2087 (2009).
Lu, W. & Lieber C. M. Nanoelectronics from the bottom up. Nature Mater. 6, 841–850 (2007).
Duan, X. Assembled semiconductor nanowire thin films for high-performance flexible macroelectronics. MRS Bull. 32, 134–141 (2007).
Park, S. & Ruoff R. S. Chemical methods for the production of graphenes. Nature Nanotech. 4, 217–224 (2009).
Tung, V. C., Allen, M. J., Yang, Y. & Kaner, R. B. High-throughput solution processing of large-scale graphene. Nature Nanotech. 4, 25–29 (2009).
Li, X. et al. Large-area synthesis of high quality and uniform graphene films on copper foils. Science 324, 1312–1314 (2009).
Reina, A. et al. Large area, few-layer graphene films on arbitrary substrates by chemical vapour deposition. Nano Lett. 9, 30–35 (2009).
Hawker, C. J. & Russell, T. P. Block copolymer lithography: merging ‘bottom-up’ with ‘top-down’ processes. MRS Bull. 30, 952–966 (2005).
Xu, T. et al. The influence of molecular weight on nanoporous polymer films. Polymer 42, 9091–9095 (2001).
Cheng, J. Y., Mayes, A. M. & Ross, C. A. Nanostructure engineering by template self-assembly of block copolymers. Nature Mater. 3, 823–828 (2004).
Park, S. et al. Macroscopic 10-terabit-per-square-inch arrays from block copolymers with lateral order. Science 323, 1030–1033 (2009).
Son, Y. W., Cohen, M. L. & Louie, S. G. Half-metallic graphene nanoribbons. Nature 444, 347–349 (2006).
Acknowledgements
The authors acknowledge technical support regarding TEM from the Electron Imaging Center for Nanomachines (EICN) at University of California, Los Angeles, and for device fabrication from the Nanoelectronics Research Facility at University of California, Los Angeles. We thank R. Kaner and D. Neuhauser for discussions, J. Chen and C. Liu for assistance in statistics analysis, and F.X. Xiu for assistance in block copolymer processing. Y.H. acknowledges support from the Henry Samueli School of Engineering and an Applied Science Fellowship. X.D. acknowledges partial support by the NIH Director's New Innovator Award Program, part of the NIH Roadmap for Medical Research, through grant no. 1DP2OD004342-01.
Author information
Authors and Affiliations
Contributions
X.D., Y.H. and J.B. conceived and designed the experiments. J.B., X.Z. and S.J. performed the experiments. J.B. collected and analysed the data. J.B., Y.H. and X.D. wrote the paper. All authors discussed the results and commented on the manuscript.
Corresponding authors
Ethics declarations
Competing interests
The authors declare no competing financial interests.
Supplementary information
Supplementary information
Supplementary information (PDF 944 kb)
Rights and permissions
About this article
Cite this article
Bai, J., Zhong, X., Jiang, S. et al. Graphene nanomesh. Nature Nanotech 5, 190–194 (2010). https://doi.org/10.1038/nnano.2010.8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1038/nnano.2010.8