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ORCIDBCICTS 2019: Nashville, TN, USA
- 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019. IEEE 2019, ISBN 978-1-7281-0586-4
- Je-Hyeong Bahk, Ali Shakouri:
Ultra-fast Thermoreflectance Imaging for Electronic, Optoelectronic, and Thermal Devices. 1-7 - Shamima Afroz, Virginia Wheeler, Marko J. Tadjer, James C. Gallagher, Geoffrey Foster, Karl D. Hobart, Brian Novak, Ken A. Nagamatsu, Kevin Frey, Patrick Shea, Rob Howell, Josephine Chang, Andrew D. Koehler, Tatyana Feygelson:
Diamond Superjunction (SJ) Process Development: Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES). 1-4 - Badou Sene
, Herbert Knapp, Hao Li, Jonas Kammerer, Soran Majied, Klaus Aufinger, Jonas Fritzin, Daniel Reiter, Nils Pohl:
A 16-dBm D-Band Power Amplifier with a Cascaded CE and CB Output Power Stage Using a Stub Matching Topology. 1-4 - Ahmed Zeeshan Pervaiz, Supriyo Datta, Kerem Yunus Çamsari:
Probabilistic Computing with Binary Stochastic Neurons. 1-6 - Jonathan P. Sculley, Brian Markman, Utku Soylu, Yihao Fang, Miguel E. Urteaga, Andy D. Carter, Mark J. W. Rodwell, Paul D. Yoder:
Monte Carlo Investigation of Traveling Accumulation Layers in InP Heterojunction Bipolar Transistor Power Amplifiers. 1-4 - Kevin W. Kobayashi, Ying Z. McCleary:
140GHz SiGe HBT and 100GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers with Active Bias Terminations. 1-4 - Mathieu Jaoul, Didier Céli, Cristell Maneux, Thomas Zimmer:
Measurement based accurate definition of the SOA edges for SiGe HBTs. 1-4 - Jason Hodges, Sayed Ali Albahrani, Sourabh Khandelwal:
A Computationally Efficient Modelling Methodology for Field-Plates in GaN HEMTs. 1-4 - Frederik Vanaverbeke, Michael Satinu, Kevin Kim:
Characterization of the Self-Enhanced Class J PA Operating Mode in LDMOS and GaN Transistors. 1-7 - Dong Liu, John Papapolymerou, Parsian K. Mohseni, Michael Becker, Jung-Hun Seo, John D. Albrecht, Timothy A. Grotjohn, Zhenqiang Ma, Sang Jung Cho, Aaron Hardy, Jisoo Kim, Cristian J. Herrera-Rodriguez, Edward Swinnich, Mohadeseh A. Baboli, Jiarui Gong, Xenofon Konstantinou:
Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction. 1-4 - Paul Stärke, Vincent Rieß, Corrado Carta, Frank Ellinger:
Active Single-Ended to Differential Converter (Balun) for DC up to 70 GHz in 130 nm SiGe. 1-4 - Keigo Nakatani, Yutaro Yamaguchi, Masatake Hangai, Shintaro Shinjo:
A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network. 1-4 - Romain Hersent, Achour Ouslimani, Jean-Yves Dupuy, Agnieszka Konczykowska, Filipe Jorge, Fabrice Blache, Muriel Riet, Virginie Nodjiadjim, Colin Mismer, Abed-Elhak Kasbari:
Over 70-GHz 4.9-Vppdiff InP linear driver for next generation coherent optical communications. 1-4 - Michael Schröter, Mario Krattenmacher:
Mathematical foundation for constructing accurate dynamic bipolar transistor compact models. 1-4 - Simone Veni, Michele Caruso, Marc Tiebout, Andrea Bevilacqua:
A 17 GHz All-npn Push-Pull Class-C VCO. 1-4 - Martin Kuball, James W. Pomeroy, Filip Gucmann, Bahar Oner:
Thermal analysis of semiconductor devices and materials - Why should I not trust a thermal simulation ? 1-5 - Jashva Rafique, The'Linh Nguyen, Sorin P. Voinigescu:
A 4.6V, 6-bit, 64GS/s Transmitter in 22nm FDSOI CMOS. 1-4 - Paulius Sakalas, Anindya Mukherjee, Michael Schröter:
Distortion Analysis of CE and CB SiGe HBT Power-Cells with fmax beyond 220 GHz for Millimeter-Wave Applications. 1-4 - Florinel Balteanu:
RF Front End Module Architectures for 5G. 1-8 - Abhiram Chakraborty, Mohamed Hamouda, Yijue Chen, Claus Lautenschlager, Daniel Englisch, Muhammad Qureshi, Ngoc-Hoa Huynh, Klaus Hoenninger, Hans-Peter Forstner:
A Scalable Multimode 24-GHz Radar Transceiver for Industrial and Consumer Applications in a 0.13µm SiGe BiCMOS Technology. 1-4 - Vadim Issakov, Andrea Bilato, Vera Kurz, Daniel Englisch, Angelika Geiselbrechtinger:
A Highly Integrated D-Band Multi-Channel Transceiver Chip for Radar Applications. 1-4 - Shui-Qing Yu, Yiyin Zhou, Huong Tran, Baohua Li, Seyed Ghetmiri, Aboozar Mosleh, Mansour Mortazavi, Wei Du, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle:
Development of SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications. 1-5 - Kenichi Okada:
Millimeter-Wave CMOS Phased-Array Transceiver Toward 1Tbps Wireless Communication. 1-6 - Ahmed Omar, Anindya Mukherjee, Wenfeng Liang, Yaxin Zhang, P. Sakalas, Michael Schröter:
82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency. 1-4 - Masaharu Ito, Takashi Okawa, Tsunehisa Marumoto:
D-band Transceiver Utilizing 70-nm GaAs-mHEMT Technology for FDD System. 1-4 - Yuriy M. Greshishchev, Tingjun Wen, Naim Ben-Hamida, Jorge Aguirre, Sadok Aouini, Marinette Besson, Robert Gibbins, Young Gouk Cho, Jerry Lam, Douglas McPherson, Mahdi Parvizi:
A 60 GS/s 8-b DAC with > 29.5dB SINAD up to Nyquist frequency in 7nm FinFET CMOS. 1-4 - Wei Quan, Akshay M. Arabhavi, Diego Marti, Sara Hamzeloui, Olivier Ostinelli, Colombo R. Bolognesi:
InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz. 1-4 - Sebastien Blais, Yuriy M. Greshishchev, Peter Schvan, Ian Betty, Douglas McGhan:
Coherent Transceiver for High Speed Optical Communications: Opportunities and Challenges. 1-6 - Young-Kai Chen, Tsu-Hsi Chang, Abirami Sivananthan:
Advanced mm-Wave Power Electronics (Invited Talk). 1-4 - David Wohlert, Bror Peterson, Thi Ri Mya Kywe, Luís Ledezma, Jeff Gengler:
8-Watt Linear Three-Stage GaN Doherty Power Amplifier for 28 GHz 5G Applications. 1-4 - Xi Zhang, Xiao Liu, Marc Spiegelberg, Rainier van Dommele, Marion K. Matters-Kammerer:
A DC-51.5 GHz Electro-Absorption Modulator Driver with Tunable Differential DC Coupling for 3D Wafer Scale Packaging. 1-4 - M. Micovic, D. Regan, J. Wong, J. Tai, H. Sharifi:
Highly Efficient Ka-band (33 GHz - 36 GHz) GaN MMIC Power Amplifier with >58.5% PAE. 1-3 - Weihu Wang, Brian A. Floyd:
Comparison of 10/20/40 GHz Quadrature VCOs for W-band FMCW Radar Systems in 90nm SiGe BiCMOS Technology. 1-4 - Daniel Reiter, Hao Li, Herbert Knapp, Jonas Kammerer, Jonas Fritzin, Soran Majied, Badou Sene, Nils Pohl:
A 19.5 dBm Power Amplifier with Highly Accurate 8-bit Power Controlling for Automotive Radar Applications in a 28 nm CMOS Technology. 1-4 - Franz X. Kärtner, Neetesh Singh:
Integrated CMOS-Compatible Mode-Locked Lasers and Their Optoelectronic Applications. 1-8 - Ken A. Nagamatsu, Shamima Afroz, Shalini Gupta, Sam Wanis, Jeffrey Hartman, Eric J. Stewart, Patrick Shea, Karen Renaldo, Robert S. Howell, Brian Novak, Annaliese Drechsler, Josephine Chang, Dale Dawson, Ron Freitag, Kevin Frey, Monique Farrell, Georges Siddiqi:
Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise Performance. 1-4 - Bishwadeep Saha, Sébastien Frégonese, Soumya Ranjan Panda, Anjan Chakravorty, Didier Céli, Thomas Zimmer:
Collector-substrate modeling of SiGe HBTs up to THz range. 1-4 - Keiji Tanaka, Naruto Tanaka, Shoichi Ogita:
25.78-Gbit/s Burst Mode TIA for 50G-EPON OLT. 1-4 - Rohit R. Karnaty, Umesh K. Mishra, James F. Buckwalter, Matthew Guidry, Pawana Shrestha, Brian Romanczyk, Nirupam Hatui, Xun Zheng, Christian Wurm, Haoran Li, Stacia Keller:
Virtual-Source Modeling of N-polar GaN MISHEMTS. 1-4 - Sourabh Khandelwal, Kevin Kellogg, Cole Hill, Hugo Morales, Larry Dunleavy, Gergana Drandova, Anita Pacheco, Jose Jimenez:
Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling. 1-4 - Pilsoon Choi, Annie Kumar, Sachin Yadav, Xiao Gong, Dimitri A. Antoniadis, Eugene A. Fitzgerald:
Implementation of InGaAs-OI Passive Devices and Its Application to 5G Millimeter-Wave Phase Shifter. 1-4 - Cezar B. Zota, Clarissa Convertino, Marilyne Sousa, Daniele Caimi, Kirsten E. Moselund, Lukas Czornomaz:
High-Performance InGaAs-on-Silicon Technology Platform For Logic and RF Applications. 1-6 - Yunyi Gong, Seokchul Lee, Hanbin Ying, Anup P. Omprakash, Edward Gebara, Huifang Gu, Charles Nicholls, John D. Cressler:
A Broadband Logarithmic Power Detector Using 130 nm SiGe BiCMOS Technology. 1-4 - Hiroshi Hamada, Takuya Tsutsumi, Go Itami, Hiroki Sugiyama, Hideaki Matsuzaki, Kenichi Okada, Hideyuki Nosaka:
300-GHz 120-Gb/s Wireless Transceiver with High-Output-Power and High-Gain Power Amplifier Based on 80-nm InP-HEMT Technology. 1-4 - Yuan Chang, Brian A. Floyd:
A Broadband Reflection-Type Phase Shifter Achieving Uniform Phase and Amplitude Response across 27 to 31 GHz. 1-4 - Soumya Ranjan Panda, Sébastien Fregonese, Anjan Chakravorty, Thomas Zimmer:
TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range. 1-4 - Yves Ngu, Ephrem G. Gebreselasie, Rajendran Krishnasamy, Rick Rassel:
Ballast Resistor Temperature Effect and Ruggedness. 1-4 - Munehiko Nagatani, Yutaka Miyamoto, Hideyuki Nosaka, Hitoshi Wakita, Yoshihiro Ogiso, Hiroshi Yamazaki, Miwa Mutoh, Minoru Ida, Fukutaro Hamaoka, Masanori Nakamura, Takayuki Kobayashi:
A 110-GHz-Bandwidth 2: 1 AMUX-Driver using 250-nm InP DHBTs for Beyond-1-Tb/s/carrier Optical Transmission Systems. 1-4 - Rafael Perez Martinez, Uppili S. Raghunathan, Brian R. Wier, Harrison P. Lee, John D. Cressler:
Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown. 1-4 - Hanbin Ying, Jeffrey W. Teng, George N. Tzintzarov, Anup P. Omprakash, Sunil G. Rao, Uppili S. Raghunathan, Adrian Ildefonso, Martin S. Fernandez, John D. Cressler:
DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures. 1-4 - Zeljko Osrecki, Josip Zilak, Marko Koricic, Tomislav Suligoj:
Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers. 1-4 - Yusuke Kumazaki, Keiji Watanabe, Toshihiro Ohki, Junji Kotani, Shiro Ozaki, Yoshitaka Niida, Kozo Makiyama, Yuichi Minoura, Naoya Okamoto, Norikazu Nakamura:
Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates. 1-4 - Diego C. Ruiz, Tamara Saranovac, Daxin Han, Olivier Ostinelli, Colombo R. Bolognesi:
New GaInAs/InAs/InP Composite Channels for mm-Wave Low-Noise InP HEMTs. 1-4 - Mauro Marchetti, Gustavo Avolio, Michele Squillante, Ajay K. Doggalli:
Load pull measurement techniques: architecture, accuracy, and applications. 1-6 - Khandker Akif Aabrar, Lan Wei, Ujwal Radhakrishna:
Modeling layout, distribution and breakdown effects in GaN HEMTs in the MVSG approach. 1-4 - Holger Rücker, Bernd Heinemann:
Device Architectures for High-speed SiGe HBTs. 1-7 - Daniel Martin, Michael Roberg, Zoya Popovic, Taylor Barton:
A 6-12 GHz Reconfigurable Transformer-Based Outphasing Combiner in 250-nm GaAs. 1-4 - Zach Griffith, Miguel Urteaga, Petra Rowell, Lan Tran, Bobby Brar:
50 - 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT. 1-6 - Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Toshiyuki Oishi:
Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation. 1-4 - Andrea Bilato, Vadim Issakov, Andrea Bevilacqua:
A 114-126 GHz Frequency Quintupler with >36 dBc Harmonic Rejection in 0.13 μm SiGe BiCMOS. 1-4 - Moon-Kyu Cho, Ickhyun Song, Nelson E. Lourenco, Adilson S. Cardoso, Christopher T. Coen, Douglas R. Denison, John D. Cressler:
A 2-20 GHz SiGe Amplitude Control Circuit with Differential Signal Selectivity for Wideband Reconfigurable Electronics. 1-4 - Sam Razavian, Aydin Babakhani:
A THz Pulse Radiator Based on PIN Diode Reverse Recovery. 1-4 - Bruce Schmukler, Jeffrey Barner, Jeremy Fisher, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Kyle M. Bothe, Satyaki Ganguly, Terry Alcorn, Jennifer Gao, Chris Hardiman, Evan Jones, Dan Namishia, Fabian Radulescu:
A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low Compression. 1-4 - Wooram Lee:
A 48-79 GHz Low-Noise Amplifier with Broadband Phase-Invariant Gain Control in 45nm SOI CMOS. 1-4 - Adam W. DiVergilio:
Application of the Kull epilayer formulation to a compact model for junction diodes. 1-4 - Valdrin Qunaj, Patrick Reynaert:
A Compact Ka-Band Transformer-Coupled Power Amplifier for 5G in 0.15um GaAs. 1-4 - Bilal Hassan, Adrien Cutivet, Christophe Rodriguez, Flavien Cozette, Ali Soltani, Hassan Maher, François Boone:
Scalable Small-Signal Modeling of AlGaN/GaN HEMT Based on Distributed Gate Resistance. 1-4 - Nivedhita Venkatesan, Gerardo Silva-Oelker, Patrick Fay:
Graded-Channel GaN-Based HEMTs for High Linearity Amplifiers at Millimeter-Wave. 1-4 - Kevin Chuang:
Design Considerations for Behavioral Modeling and Pre-Distortion of Wide Bandwidth Wireless Systems. 1-6 - Kazutaka Inoue, Kenta Sugawara, Ken Kikuchi, Isao Makabe, Hiroshi Yamamoto:
Feasibility Study of InAlN/GaN HEMT for sub-6 GHz Band Applications. 1-4
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