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ORCIDICICDT 2014: Austin, TX, USA
- 2014 IEEE International Conference on IC Design & Technology, ICICDT 2014, Austin, TX, USA, May 28-30, 2014. IEEE 2014, ISBN 978-1-4799-2153-9
- Philippe Galy, J. Bourgeat, D. Marin-Cudraz:
New modular bi-directional power-switch and self ESD protected in 28nm UTBB FDSOI advanced CMOS technology. 1-4 - Yuan Fang, Jonas Bargon, Ashok Jaiswal, Klaus Hofmann:
A low-jitter clock and data recovery for GDDR5 interface trainings. 1-4 - C. B. Kushwah, Santosh Kumar Vishvakarma
, Devesh Dwivedi:
Single-ended sub-threshold finfet 7T SRAM cell without boosted supply. 1-4 - Puskar Budhathoki, Andreas Henschel, Ibrahim Abe M. Elfadel:
Thermal-driven 3D floorplanning using localized TSV placement. 1-4 - Landon Caley, Chien-Wei Lo, Francis Sabado, Jia Di:
A comparative analysis of 3D-IC partitioning schemes for asynchronous circuits. 1-4 - Sanad Kawar, Khaldoon Abugharbieh, Waseem Al-Akel, Mahmood Mohammed:
A 10 Gbps loss of signal detector for high-speed AC-coupled serial transceivers in 28nm CMOS technology. 1-4 - Robert Bucki, Todd Bridges, Benjamin Bowers, T. Xue, I. Mir, D. Le, T. Kazi, Jeff Fischer, Samit Ekbote, S. Sengupta, G. Nallapati:
Mobile CPU power/performance benchmarking and process technology co-optimization. 1-4 - Nanshu Lu, Pulin Wang:
Bio-integrated electronics. 1-5 - Koji Eriguchi, Yoshinori Takao, Kouichi Ono:
A new aspect of plasma-induced physical damage in three-dimensional scaled structures - Sidewall damage by stochastic straggling and sputtering. 1-5 - Gerald Cibrario, Marjorie Gary, Fabien Gays, Karim Azizi-Mourier, Olivier Billoint, Ogun Turkyilmaz, Olivier Rozeau:
A high-level design rule library addressing CMOS and heterogeneous technologies. 1-4 - Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, Kouichi Ono:
Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETs. 1-4 - D. H. Triyoso, Wenke Weinreich, Konrad Seidel, Mark G. Nolan, Patrick Polakowski, D. Utess, Susanne Ohsiek, K. Dittmar, M. Weisheit, M. Licbau, R. Fox:
ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM. 1-4 - Somnath Paul, Saibal Mukhopadhyay, Swarup Bhunia:
Robust low-power reconfigurable computing with a variation-aware preferential design approach. 1-6 - Haoxing Ren:
A brief introduction on contemporary High-Level Synthesis. 1-4 - Lirida A. B. Naviner, Kaikai Liu, Hao Cai, Jean-François Naviner:
Efficient computation of combinational circuits reliability based on probabilistic transfer matrix. 1-4 - Gennadi Bersuker:
Assessing device reliability through atomic-level modeling of material characteristics. 1-3 - Akif Sultan, Rashad Ramzan, Derick Wristers:
Design layout optimization in the presence of proximity-dependent stress effects. 1-4 - C. B. Kushwah, Santosh Kumar Vishvakarma:
A sub-threshold eight transistor (8T) SRAM cell design for stability improvement. 1-4 - David Burnett, Sanjay Parihar, Hema Ramamurthy, Sriram Balasubramanian:
FinFET SRAM design challenges. 1-4 - Ken Kawai, Akifumi Kawahara, Ryutaro Yasuhara, Shunsaku Muraoka, Zhiqiang Wei, Ryotaro Azuma, Kouhei Tanabe, Kazuhiko Shimakawa:
Highly-reliable TaOx reram technology using automatic forming circuit. 1-4 - Tzung-Je Lee, Kai-Wei Ruan, Chua-Chin Wang:
32% Slew rate and 27% data rate improved 2×VDD output buffer using PVTL compensation. 1-4 - Gerard Touma, Rouwaida Kanj, Rajiv V. Joshi, Ayman I. Kayssi, Ali Chehab:
Robust bias temperature instability refresh design and methodology for memory cell recovery. 1-4 - Francesco Guido, Vincenzo Mariano Mastronardi, Maria Teresa Todaro, Simona Petroni, Massimo de Vittorio:
Piezoelectric soft MEMS for tactile sensing and energy harvesting. 1-4 - Revathy Padmanabhan, Navakanta Bhat, Yuichiro Morozumi, S. Mohan, Sanjeev Kaushal:
High-performance stacked TiO2-ZrO2 and Si-doped ZrO2 metal-insulator-metal capacitors. 1-4 - Mahmood Mohammed, Khaldoon Abugharbieh, Mahmoud Abdelfattah, Sanad Kawar:
Design of a voltage reference circuit based on subthreshold and triode MOSFETs in 90nm CMOS. 1-4 - Thuy Dao, Todd Roggenbauer, Jim Colclasure:
STI fill effect on poly-poly comb IL. 1-3 - Bao Liu, Chiung-Hung Chen:
Testing, diagnosis and repair methods for NBTI-induced SRAM faults. 1-4 - Mariem Slimani, Arwa Ben Dhia, Lirida A. B. Naviner:
Cross logic: A new approach for defect-tolerant circuits. 1-4 - Wenke Weinreich, Konrad Seidel, Patrick Polakowski, Stefan Riedel, Lutz Wilde, Dina H. Triyoso, Mark G. Nolan:
ALD ZrO2 processes for BEoL device applications. 1-4 - Ronald P. Luijten, Andreas C. Döring, Stephan Paredes:
Dual function heat-spreading and performance of the IBM/ASTRON DOME 64-bit μServer demonstrator. 1-4 - An Chen:
Emerging research device roadmap and perspectives. 1-4 - Stephen Long, W. Mark Dorsey, André A. Adams, Gregory H. Huff:
Metallization of a polymer substrate for microfluidic-cooled RF laminates. 1-4 - Giulia Beanato, Alessandro Cevrero, Giovanni De Micheli, Yusuf Leblebici:
3D serial TSV link for low-power chip-to-chip communication. 1-4 - Armen Durgaryan, Abraham Balabanyan, Vazgen Melikyan, Khaldoon Abugharbieh:
Pull-up/pull-down line impedance matching methodology for high speed transmitters. 1-4 - Stephen J. Tarsa, Amit P. Kumar, H. T. Kung:
Workload prediction for adaptive power scaling using deep learning. 1-5 - Joshua Friedrich, Hung Q. Le, William J. Starke, Jeff Stuecheli, Balaram Sinharoy, Eric J. Fluhr, Daniel M. Dreps, Victor V. Zyuban, Gregory S. Still, Christopher J. Gonzalez, David Hogenmiller, Frank Malgioglio, Ryan Nett, Ruchir Puri, Phillip J. Restle, David Shan, Zeynep Toprak Deniz, Dieter F. Wendel, Matthew M. Ziegler, Dave W. Victor:
The POWER8TM processor: Designed for big data, analytics, and cloud environments. 1-4 - Sriram R. Vangal, Shailendra Jain, Vivek De:
A solar-powered 280mV-to-1.2V wide-operating-range IA-32 processor. 1-4 - J. Mazurier, Olivier Weber, François Andrieu, Cyrille Le Royer, Olivier Faynot, Maud Vinet:
Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs. 1-4 - Dimitrios Rodopoulos, Dimitrios Stamoulis, Grigorios Lyras, Dimitrios Soudris, Francky Catthoor:
Understanding timing impact of BTI/RTN with massively threaded atomistic transient simulations. 1-4 - Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer:
Characterization and modeling of charge trapping: From single defects to devices. 1-4 - Chua-Chin Wang, Wen-Je Lu, Sheng-Syong Wang:
An on-chip high-voltage current sensor for battery module monitoring. 1-4 - James Boley, Benton H. Calhoun, Vikas Chandra, Robert C. Aitken:
Modeling SRAM dynamic VMIN. 1-4 - James W. Miller, Michael Stockinger, Scott Ruth, Alex Gerdemann, Melanie Etherton, Mohamed Moosa:
RC triggered active ESD clamps; How should they behave under powered conditions? 1-5 - Shivam Priyadarshi, W. Rhett Davis, Paul D. Franzon:
Pathfinder3D: A framework for exploring early thermal tradeoffs in 3DIC. 1-6
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