MOSFET TARASISTOR

 Main Content
 1-Definition
2- Contraction
3- Operation
4- I/V characteristic
5- IGPT
The MOSFET (metal oxide semiconductor field-effect transistor)

is another category of field-effect transistor. The MOSFET, different from the JFET, has no

pn junction structure; instead, the gate of the MOSFET is insulated from the channel by a

silicon dioxide (SiO2) layer.

The two basic types of MOSFETs are enhancement (E) and depletion (D). Of the two types,

the enhancement MOSFET is more widely used. Because polycrystalline silicon is now used

for the gate material instead of metal, these devices are sometimes called IGFETs (insulated-

gate FETS).
Enhancement MOSFET (E-MOSFET)

The E-MOSFET operates only in the enhancement mode and has no depletion

mode. It differs in construction from the D-MOSFET, which is discussed next, in

that it has no structural channel. Notice in Figure 8–34(a) that the substrate

extends completely to the SiO2 layer. For an n-channel device, a positive gate

voltage above a threshold value induces a channel by creating a thin layer of

negative charges in the substrate region adjacent to the SiO2 layer, as shown

in Figure 8–34(b). The conductivity of the channel is enhanced by increasing

the gate-to-source voltage and thus pulling more electrons into the channel

area. For any gate voltage below the threshold value, there is no channel.
E-MOSFET schematic symbols
The schematic symbols for the n-channel and p-
channel E-MOSFETs are shown in Figure 8–35. The
broken lines symbolize the absence of a physical
channel. An inward pointing substrate arrow is for
n channel, and an outward-pointing arrow is for p
channel. Some E-MOSFET devices have a separate
substrate connection.
 Another type of MOSFET is the depletion MOSFET (D-
Depletion MOSFET (D-MOSFET):- MOSFET), and Figure 8–36 illustrates its basic structure.
The drain and source are diffused into the substrate
material and then connected by a narrow channel
adjacent to the insulated gate. Both n-channel and p-
channel devices are shown in the figure. We will use the
n-channel device to describe the basic operation. The p-
channel operation is the same, except the voltage
polarities are opposite those of the n-channel.
The D-MOSFET can be operated in either of two modes—
the depletion mode or the enhancement mode—and is
sometimes called a depletion/enhancement MOSFET.
Depletion Mode

Visualize the gate as one plate of a parallel-plate

capacitor and the channel as the other plate. The
silicon dioxide insulating layer is the dielectric.
With a negative gate voltage, the negative charges
on the gate repel conduction electrons from the
channel, leaving positive ions in their place.
Thereby, the n channel is depleted of some of its
electrons, thus decreasing the channel
conductivity. The greater the negative voltage on
the gate, the greater the depletion of n-channel
electrons. At a sufficiently negative gate-to-source
voltage, VGS(off), the channel is totally depleted
and the drain current is zero. This depletion mode
is illustrated in Figure 8–37(a). Like the n-channel
JFET, the n-channel D-MOSFET conducts drain
current for gate-to-source voltages between
VGS(off) and zero. In addition, the D-MOSFET
conducts for values of VGS above zero
Enhancement Mode

With a positive gate voltage, more

conduction electrons are attracted into
the channel, thus increasing (enhancing)
the channel conductivity, as illustrated in
Figure 8–37(b).
D-MOSFET Symbols

The schematic symbols for both the n-channel and the p-

channel depletion MOSFETs are shown in Figure 8–38.
The substrate, indicated by the arrow, is normally (but
not always) connected internally to the source.
Sometimes, there is a separate substrate pin.
Power MOSFET Structures
The conventional enhancement MOSFETs have a
long thin lateral channel as shown in the structural
view in Figure 8–39. This results in a relatively high
drain-to-source resistance and limits the E-MOSFET
to low power applications. When the gate is
positive, the channel is formed close to the gate
between the source and the drain, as shown.
Laterally Diffused MOSFET (LDMOSFET)

The LDMOSFET has a lateral channel structure and

is a type of enhancement MOSFET designed for
power applications. This device has a shorter
channel between drain and source than does the
conventional E-MOSFET. The shorter channel
results in lower resistance, which allows higher
current and voltage
VMOSFET

The V-groove MOSFET is another example of the

conventional E-MOSFET designed to achieve higher power
capability by creating a shorter and wider channel with
less resistance between the drain and source using a
vertical channel structure. The shorter, wider channels
allow for higher currents and, thus, greater power
dissipation. Frequency response is also improved. The
VMOSFET has two source connections, a gate connection
on top, and a drain connection on the bottom, as shown
in Figure 8–41. The channel is induced vertically along
both sides of the V-shaped groove between the drain (n+
substrate where n+ means a higher doping level than )
and the source connections. The channel length is set by
the thickness of the layers, which is controlled by doping
densities and diffusion time rather than by mask
dimensions.
TMOSFET
The vertical channel structure of the TMOSFET is
illustrated in Figure 8–42. The gate structure is
embedded in a silicon dioxide layer, and the source
contact is continuous over the entire surface area.
The drain is on the bottom. TMOSFET achieves
greater packing density than VMOSFET, while
retaining the short vertical channel advantage
Dual-Gate MOSFETs
The dual-gate MOSFET can be either a depletion or an
enhancement type. The only difference is that it has two
gates, as shown in Figure 8–43. As previously mentioned,
one drawback of a FET is its high input capacitance,
which restricts its use at higher frequencies. By using a
dual-gate device, the input capacitance is reduced, thus
making the device useful in high-frequency RF amplifier
applications. Another advantage of the dual-gate
arrangement is that it allows for an automatic gain
control (AGC) input in RF amplifiers. Another application
is demonstrated in the Application Activity where the
bias on the second gate is used to adjust the
transconductance curve.

radio-frequency power amplifier (RF power amplifier)

is a type of electronic amplifier that converts a low-power 
radio-frequency signal into a higher-power signal
 Short intro

Threshold voltage(VGS(th)) : the minimum
value of the Gate-Source Voltage(VGS)that
allow drain current across throw the channel
VGS(th) is found in Datasheet.

Gate Current equal Zero ID

IG = 0
  Cutoff Region :
Operation  VGS > VGS(th)  ID = Zero
regions  Triode Region : in this region ID depend on VGS & VDS

 ID = K(VGS-Vth)VDS-VDS/2
 The constant K depends on the particular MOSFET
 The conditions to achieve this case:
 (VGS >= Vth) or VDS < (VGS-Vth)

 Saturation Region :
VGS = VG – VS (Constant Value)
VGD = V – VD
G

when increasing VD the value of VGD decreasing

 The conditions to achieve this case:
 (VGS >= Vth) or VDS > (VGS-Vth)
 ID = K
The output &transfer
characteristics of e-mosfet

Output Characteristic Curve :

relationship between output current and output voltage (ID vs VDS)

1- by increasing VDS  ID increasing

2- if VDS very high value  ID will be constant

VDS is determined by the value of (VGS-Vth)

VDS(sat) = VGS - Vth

 Transfer Characteristic Curve :
 relationship between output current and
input voltage (ID vs VGS)
 when VGS > VGS(th)  ID = Zero
(cutoff region)
 when VGS >= Vth (saturation region )
so that drain current (ID )= K
 the D-MOSFET can operate with either
positive or negative gate voltages.
 So that VGS = + or – or zero value The output &transfer
 VGS = 0 corresponds to IDSS & ID = 0 characteristics curve of D-
corresponds to VGS(off)
mosfet
8–7 MOSFET BIASING

 Three ways to bias a MOSFET are :-

 zero-bias

voltage-divider bias

drain-feedback bias
E-MOSFET Bias :-
Because E-MOSFETs must have a VGS greater than the threshold value, VGS(th), zero bias cannot be used. Figure 8–

46 shows two ways to bias an

E-MOSFET (D-MOSFETs can also be biased using these methods). An n-channel device is used for purposes of

illustration. In either the voltage-divider or drain-feedback bias arrangement, the purpose is to make the gate

voltage more positive than the source by an amount exceeding VGS(th). Equations
FOR THE ANALYSIS OF THE VOLTAGE-DIVIDER BIAS IN FIGURE 8–46(A) ARE AS FOLLOWS:

WHERE ID=K(V(GS)-V(GS-TH))^2

IN THE DRAIN-FEEDBACK BIAS CIRCUIT IN FIGURE 8–46(B), THERE IS NEGLIGIBLE GATE CURRENT AND, THEREFORE, NO VOLTAGE DROP ACROSS RG. THIS MAKES VGS = VDS.
D-MOSFET Bias :-
Recall that D-MOSFETs can be operated with either positive or negative values of VGS. A simple bias method is to

set VGS 0 so that an ac signal at the gate varies the gate-to source voltage above and below this 0 V bias point. A

MOSFET with zero bias is shown in Figure 8–49(a). Since VGS 0, ID = IDSS as indicated. The drain-to-source voltage is

expressed as follows:

VDS = VDD – IDSS*RD

The purpose of RG is to accommodate an ac signal input by isolating it from ground, as shown in Figure 8–49(b).

Since there is no dc gate current, RG does not affect the zero gate-to-source bias
THE IGBT

 The IGBT (insulated-gate bipolar transistor) combines features from

both the MOSFET and the BJT that make it useful in high-voltage and
high-current switching applications.
 The IGBT is a device that has the output conduction characteristics of
a BJT but is voltage controlled like a MOSFET
THE IGBT

 The IGBT has three terminals: gate, collector,

and emitter.
 One common circuit symbol is shown in Figure 8–
51. As you can see, it is similar to the BJT
symbol except there is an extra bar representing
the gate structure of a MOSFET rather than a
base.
THE IGBT

 The IGBT has MOSFET input characteristics and BJT output characteristics.
IGBTs have the same saturation voltage as BJTs.
 IGBTs are superior to MOSFETs in some applications because they can handle
high collector-to-emitter voltages exceeding 200 V and have less saturation
voltage when they are in the on state.
 IGBTs are superior to BJTs in some applications because they can switch
faster. In terms of switching speed, MOSFETs switch fastest, then IGBTs,
followed by BJTs, which are slowest. A general comparison of IGBTs,
MOSFETs, and BJTs is given in Table 8–1.
THE IGBT
THE IGBT OPERATION

 The IGBT is controlled by the gate voltage just like a MOSFET.

Essentially, an IGBT can be thought of as a voltage-controlled
BJT, but with faster switching speeds. Because it is controlled by
voltage on the insulated gate.
 the IGBT has essentially no input current.
 The input element is a MOSFET, and the output element is a
bipolar transistor.
 When the gate voltage with respect to the emitter is less than a
threshold voltage the device is turned off. The device is turned on
by increasing the gate voltage to a value exceeding the threshold
voltage.
THE IGBT OPERATION

 he npnp structure of the IGBT forms a parasitic transistor and an

inherent parasitic resistance within the device, as shown in red in
Figure 8–53.
 These parasitic components have no effect during normal operation.
However, if the maximum collector current is exceeded under
certain conditions, the parasitic transistor, Qp can turn on. If Qp
turns on, it effectively combines with Q1 to form a parasitic
element, as shown in Figure 8–53, in which a latch up condition can
occur.
 In latch-up, the device will stay on and cannot be controlled by the
gate voltage. Latch-up can be avoided by always operating within
the specified limits of the device