FETs vs.
BJTs
• Amplifiers
Similarities: • Switching devices
• Impedance matching circuits
• FETs are voltage controlled devices.
Differences: BJTs are current controlled devices.
• FETs have higher input impedance. BJTs
have higher gain.
• FETs are less sensitive to temperature
variations and are better suited for
integrated circuits
• FETs are generally more static sensitive
than BJTs.
FET Types
JFET: Junction FET
MOSFET: Metal–Oxide–Semiconductor FET
D-MOSFET: Depletion MOSFET
E-MOSFET: Enhancement MOSFET
Junction Field effect Transistor(JFET)
There are two types of JFETs:
• n-channel
• p-channel
The n-channel is the more widely used
of the two.
JFETs have three terminals:
• The Drain (D) and Source
(S) are connected to the n-
channel
• The Gate (G) is connected to
the p-type material
JFET Operation: The Basic Idea
JFET operation can be compared to that of a water
spigot.
• The source is the accumulation of
electrons at the negative pole of
the drain-source voltage.
• The drain is the electron
deficiency (or holes) at the positive
pole of the applied voltage.
• The gate controls the width of the
n-channel and, therefore, the flow
of charges from source to drain.
JFET Operating Characteristics
There are three basic operating conditions for a JFET:
• VGS = 0 V, VDS increasing to some positive value
• VGS < 0 V, VDS at some positive value
• Voltage-controlled resistor
JFET Characteristics: VGS=0V
Three things happen when VGS = 0 V and VDS increases
from 0 V to a more positive voltage:
• The size of the depletion region
between p- type gate and n-channel
increases.
• Increasing the size of the depletion
region decreases the width of the n-
channel, which increases its
resistance.
• Even though the n-channel
resistance is increasing, the current
from source to drain (ID) through the n-
channel is increasing because VDS is
increasing.
JFET Characteristics: Pinch Off
• If VGS = 0 V and VDS
continually increases to a
more positive voltage, a point
is reached where the depletion
region gets so large that it
pinches off the channel.
• This suggests that the
current in channel (ID)
drops to 0 A, but it does
not: As VDS increases, so
does ID. However, once
pinch off occurs, further
increases in VDS do not
cause ID to increase.
JFET Characteristics: Saturation
At the pinch-off point:
• Any further increase in VDS
does not produce any
increase in ID. VDS at pinch-
off is denoted as Vp
• ID is at saturation or
maximum, and is referred
to as IDSS.
JFET Operating Characteristics(VGS<0,
VDS at some positive value
• Application of a
negative voltage to the
gate of a JFET.
• As VGS becomes more
negative, the depletion
region increases.
JFET Operating Characteristics
As VGS becomes more negative:
• The JFET
experiences pinch-off
at a lower voltage
(VP).
• ID decreases (ID < IDSS)
even when VDS
increases
• ID eventually drops to
0 A. The value of VGS
that causes this to
occur is designated
VGS(off).
Note that at high levels of VDS the JFET reaches a breakdown situation. ID
increases uncontrollably if VDS > VDSmax, and the JFET is likely destroyed.
P-Channel JFETs
• The p-channel JFET
behaves the same as
the n-channel JFET.
The only differences
are that the voltage
polarities and current
directions are
reversed.
JFET Transfer Curve
This graph
shows the
value of ID for
a given value
of VGS.
Plotting the JFET Transfer Curve
Using IDSS and Vp (VGS(off)) values found in a specification
sheet, the transfer curve can be plotted according to
these three steps:
2
V
1. Solving for VGS = 0 V: ID = IDSS
ID I 1 GS
DSS V
P
2. Solving for VGS = VGS(off): ID = 0 A
3. Solving for VGS = 0 V to VGS(off): 0 A < ID < IDSS
MOSFETs
MOSFETs have characteristics similar to those of
JFETs and additional characteristics that make then
very useful.
There are two types of MOSFETs:
Depletion-Type
Enhancement-Type
Depletion-Type MOSFET Construction
The Drain (D) and Source
(S) connect to the to n-
type regions. These n-
typed regions are
connected via an n-
channel. This n-channel is
connected to the Gate (G)
via a thin insulating layer
of silicon dioxide (SiO2).
The n-type material lies on
a p-type substrate that
may have an additional
terminal connection called
the Substrate (SS).
Depletion-Type MOSFET :Basic Operation and Characteristics
• VGS=0 and VDS is applied across the drain to source
terminals.
• This results to attraction of free electrons of the n-
channel to the drain, and hence current flows.
• n-Channel depletion-type MOSFET with VGS = 0 V and
applied voltage VDD
• VGS is set at a negative voltage such as -1 V.
• The negative potential at the gate pressures
electrons toward the p-type substrate and
attract holes from the p-type substrate.
• This will reduce the number of free electrons in
the n-channel available for conduction.
• The more negative the VGS, the resulting level
of drain current ID is reduced.
• When VGS is reduced to VP (Pinch-off voltage),
then ID=0 mA.
Basic MOSFET Operation
A depletion-type MOSFET can operate in two modes:
Depletion mode
Enhancement mode
Depletion Mode Operation (D-MOSFET)
The characteristics
are similar to a JFET.
When VGS = 0 V, ID = IDSS
When VGS < 0 V, ID < IDSS
The formula used to plot the
2
transfer curve for a JFET applies ID I 1VGS
DSS VP
to a D-MOSFET as well:
Enhancement Mode Operation
(D-MOSFET)
VGS > 0 V, ID
increases above IDSS
(ID > IDSS)
The formula used to
plot the transfer
curve still applies:
2
V
ID I
DSS 1 V
GS
P
Note that VGS is now positive
p-Channel D-Type MOSFET
D-Type MOSFET Symbols
E-Type MOSFET Construction
• The Drain (D) and Source (S) connect to the to n-type
regions. These n-type regions are connected via an n-
channel
• The Gate (G) connects to the p-
type substrate via a thin
insulating layer of silicon
dioxide (SiO2) +
-
-
• There is no channel - -
+ -
- ++
• The n-type material lies on a p- -
type substrate that may have -
an additional terminal
connection called the
Substrate (SS)
E-Type MOSFET Operation
The enhancement-type MOSFET (E-MOSFET) operates
only in the enhancement mode.
• VGS is always
positive
• As VGS increases, ID
increases
• As VGS is kept
constant and VDS is
increased, then ID
saturates (IDSS) and
the saturation level
(VDSsat) is reached
E-Type MOSFET Transfer Curve
To determine ID given VGS:
ID k (VGS VT ) 2
where:
VT = the E-MOSFET
threshold
voltage
k, a constant, can be
determined by using VDSsat can be calculated using:
values at a specific ID(ON)
k VDSsat VGS VT
point and the (VGS(ON) VT) 2
formula:
p-Channel E-Type MOSFETs
The p-channel enhancement-type MOSFET is similar to
its n-channel counterpart, except that the voltage
polarities and current directions are reversed.
MOSFET Symbols
ID / VGS
GS
RELATIONSHIP BETWEEN μ, rd, gm
μ=rd×gm
• μ =amplification factor= VDS/ VGS
