The document discusses Curie temperature and the Hall effect. It begins by defining Curie temperature as the temperature above which a substance is paramagnetic and below which it is ferroelectric. It then discusses barium titanate (BaTiO3) specifically, describing its phase transitions with temperature changes and applications in electronics due to its ferroelectric properties. The document also covers the Hall effect theory, defining concepts like carrier density, mobility, and how the Hall effect can determine if a semiconductor is p-type or n-type. It lists some applications of the Hall effect like magnetometers and automotive fuel level sensors.
The document discusses Curie temperature and the Hall effect. It begins by defining Curie temperature as the temperature above which a substance is paramagnetic and below which it is ferroelectric. It then discusses barium titanate (BaTiO3) specifically, describing its phase transitions with temperature changes and applications in electronics due to its ferroelectric properties. The document also covers the Hall effect theory, defining concepts like carrier density, mobility, and how the Hall effect can determine if a semiconductor is p-type or n-type. It lists some applications of the Hall effect like magnetometers and automotive fuel level sensors.
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this ppt contains theory applications and results of both experiment.
The document discusses Curie temperature and the Hall effect. It begins by defining Curie temperature as the temperature above which a substance is paramagnetic and below which it is ferroelectric. It then discusses barium titanate (BaTiO3) specifically, describing its phase transitions with temperature changes and applications in electronics due to its ferroelectric properties. The document also covers the Hall effect theory, defining concepts like carrier density, mobility, and how the Hall effect can determine if a semiconductor is p-type or n-type. It lists some applications of the Hall effect like magnetometers and automotive fuel level sensors.
The document discusses Curie temperature and the Hall effect. It begins by defining Curie temperature as the temperature above which a substance is paramagnetic and below which it is ferroelectric. It then discusses barium titanate (BaTiO3) specifically, describing its phase transitions with temperature changes and applications in electronics due to its ferroelectric properties. The document also covers the Hall effect theory, defining concepts like carrier density, mobility, and how the Hall effect can determine if a semiconductor is p-type or n-type. It lists some applications of the Hall effect like magnetometers and automotive fuel level sensors.
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CURIE TEMPERATURE
AND HALL EFFECT
BY : ABHINANDAN YADAV suvashis maithy shivam arora
Curie temperature(by Shivam Arora
)
Dielectric:Substance when put in electric field, becomes
polarized.
Polarization:Dipole moment per unit volume.
P= 0E
We can define dielectric
constant as =C/C0 C Capacitance of capacitor with dielectric C0Capacitance of capacitor with air
Ferroelectricity (discovered in 1920):Characteristics of having spontaneous polarization Ability to reverse the direction of polarization with external electric field
Curie temperature:Above this temperature substance is paramagnetic
Below this temperature substance is ferroelectric
Perovskite:One of the largest oxide families, among which
most important group is ferroelectric oxide Posses extremely high value of dielectric constant Ferro electricity in perovskite discovered in 1940 Crystal structure ABO3 (O= oxygen)
A located at the corner
B located at the center O located on the face Resulting perovskite structure can also be described by BO6 (octahedral)
Perovskite with multifunction
structure
Reason for changing cubic to
tetragonal structure Due to temperature change distortion in BO6 Due to this distortion BaTiO3 It will go cubic to tetragonal structure ( decreasing temperature )
Size effect It will told us degree of distortion
For simple cubic case , geometrically relation
a= 1.44(rA+ rB)= 2(rB + rO) t= (rA+rO)/1.44(rB +rO) t is called gold schmithed tolerance factor If rA is smaller than ideal value than t become smaller than 1 as result BO6 octahedral will tilt in order to fill space
Structure base on (t)
Cubic -> .89<t<1 Ex SrTiO3 T=1.00 rA=1.44A0 , rB= .60A0 Low value of t reduce the symmetry t=.81 orthorhombic
Barium Titanate(BaTiO3) Used in electronic application due to its excellent Ferroelectric properties with high dielectric constant. It was the first oxide ferroelectric of the form ABO 3. Above Curie Temperature --> Cubic Structure Size of Barium ion --> 158pm Size of Titanate ion --> 60m
Properties of Barium Titanate chemical formula
BaTiO3
Molar mass
233.192g
Appearance
White crystal
density
6.02g/cm3
Melting point
1625C
Band gap
3.2eV
Refractive index
2.412
Effect of temperature At the Curie temperature crystal undergoes phase transition which is called displacement phase transition. Above the Curie temperature Cubic structure is stable with a= 4.009. When cooling down below 130C -0C then the structure is tetragonal with a=3.992 and c=4.035. Cooling below 0C tetragonal structure change to orthorhombic structure and below -90C unit cell changes to rhombohedral
Concept of spontaneous polarization Below the Curie Point one of the axis (c-axis ) stretched about 1% and other axis shrink to become tetragonal . In this case titanium ion will occupy the position near the oxygen ion being displaced by 0.12 from the body centre due to this spontaneous polarization occur.
In the Para-electric cubic face the centre of
the positive charge coincide with the negative
charge . Cooling below curie temperature tetragonal face develop where the centre of the positive ion displaced relative to negative ion which leads to the formation of electric dipole. Due to this spontaneous polarization occurs.
Applications of BaTiO
In the pure from it is electrical insulator but
when dropped with small amount of metal
most notably scandium yttrium etc. become semiconducting. As a semiconductor it possesses positive temperature coefficient of resistance and this property is used in thermal switch. Thermal switch is a device which can save our circuit from heating
Second application of BaTiO3:BaTiO3 has piezoelectric properties so we can use it transducer TRANSDUCER:- device which converts one form of energy to other form. Using BaTiO3 we can measure pressure.
HALL EFFECT THEORY AND APPLICATIONS
By Abhinandan Yadav
OBJECTIVE To find the Hall coefficient, carrier density and
carrier mobility of the given specimen and
also find the whether the specimen are p-type or n-type.
LORENTZ FORCE When a charge particle moving in magnetic
field, charge particle experiences a force due to
magnetic field this forces is called Lorentz force. This force is perpendicular to the plane of interactions.
HALL EFFECT The Hall effect comes from the magnetic
forces on the carriers.
Discovered in 1879 by Edwin Herbart Hall. The Hall effect is the productions of voltage
difference across current carrying bar in the
presence of magnetic field, perpendicular to current and magnetic field.
HALL EFFECT
MOBILITY Mobility is a characteristic property of charge
carriers.
CONDUCTIVITY Conductivity is the characteristic of the
specimen conductivity of specimen is given by
nqv N is number of carrier q is charge on the carrier v is velocity of charge carrier
FORMULAS Hall coefficient Carrier density Mobility
R is the Hall coefficient, Vh is the Hall
voltage, H is magnetic field intensity, q is charge on the carrier, n is carrier density, is mobility of carrier, is conductivity of carrier.
APPLICATIONS Magnetometers to measure magnetic field Hall effect sensor or current sensor Magnetic positions sensing in brushless DC
electric motor Automotive fuel level indicator Spacecraft propulsion And many more
Hall Effect Sensor
Hall effect sensor is transducer that varies its
output voltage in response to a magnetic
field.
A wheel containing two
magnets passing by a Hall effect sensor
HALL EFFECT SENSOR
CIRCUIT FOR SENSOR
Automotive Fuel Level
Indicator The main principle of operations of such
indicator is position sensing of floating
element. A button magnet is mounted on the surface of a floating object the current carrying conductor is fixed on the top of the tank linking up with this magnet. As the level of the fuel rises, an increases magnetic field is applied on the current carrying conductor resulting higher voltage
Spacecraft Propulsion HALL EFFECT THRUSTER Hall effect thruster is a type of
thruster in which the propellant
is accelerated by an electric field
SPACECRAFT PROPULSION
Hall thruster. Hall thrusters are largely axially symmetric. This is a
cross-section containing that axis.
RESULT (CALCULATION, GRAPH, ERROR ANALYSIS) By Suvashis Maity
Curie temperature Temperature v/s dielectric constant graph Curie temperature is about 1360c Above this temperature dielectric is paramagnetic, does not show spontaneous polarization Below this temperature dielectric is ferroelectric This temperature is also called transition temperature.
If we farther decrease the temperature we get this
curve:-
1.Above curie temperature ( Cubic structure)
2. 50c to curie temperature ( Tetragonal structure) 3. -800c to 50c (Orthorhombic structure) 4. <-800c ( Rhombohedral structure)
Behaviour of dielectric constant() with temperature
Above curie temperature Above curie temperature crystal is paraelectric. With increase of temperature vibration of each
dipole increase randomness increase
alignment decrease decrease
Below curie temperature
Below curie temperature crystal is ferroelectric. BaTiO3 is polycrystalline structure form
grains optical and mechanical activity of
each crystal are same in a grain Spontaneous polarization each domain aligned Effective +ve and ve charges appear at each boundary of grain called space charge oppose spontaneous polarization With decrease of temperature space charge increase dielectric constant decrease
Hall effect
Calibration curve
Current vs Hall voltage
Magnetic field vs Hall voltage
Calculations:-
By variable mag. field method we get R=0.21*10-3 volt m amp-1
-1
Source of errors:1. Effect of earths magnetic field:
a. Horizontal component of earth magnetic field can effects the resultant magnetic field produces by the coil b. Effect is very less(around 0.6 gauss) 2. Temperature effect: Increase in temperature scattering increases mobility decreases
Error analysis:-
Why hall effect?
There are also some methods to
find carrier density and carrier
mobility. (Wien effect, field effect mobility) Apply current in +x direction, Magnetic field in +y direction, Force will be at +z direction and mejority carrier gets attracted by the force . Corresponding to electron and hole we get +ve and ve voltage. Using Hall effect we can find the types of semiconductor.
REFERENCES:Introduction to Solid State
PhysicsbyCharles Kittel Solid State Physics byS. O. Pillai Spontaneous polarizatand ferroelectricity of BaTiO3 type ceramics by muRata Electrons and holes in semiconductor by william shockley Electronic circuits and theory by Millman and Halkias https://en.wikipedia.org/wiki/Hall_effect
