Amity Institute of Applied Sciences
Amity University, Kolkata
Experiment No. 3
TITLE OF EXPERIMENT: TO STUDY REVERSED BIASED
CHARACTERISTICS OF P-N JUNCTION DIODE
Program Name: B.Sc (H)-Physics
Course Name: Concept of Electronics
Code: PHYS204
Name of Course Coordinator: Dr. PARTHA SONA MAJI
A. AIM/OBJECTIVE OF THE EXPERIMENT:
1. To observe and draw the Forward and Reverse bias V-I Characteristics of a P-N Junction
diode.
2. To calculate the static and dynamic resistance in forward and reverse Bias Conditions.
B. APPARATUS/SOFTWARE’S/SIMULATORS/CHEMICALS USED:
1. P-N Diode IN4007
2. Regulated Power supply (0-30V)
3. Resistor 1KΩ.
4. Ammeter (0-20 mA)
5. Ammeter (0-200µA)
6. Voltmeter (0-20V).
7. Connecting chords & probes.
C. THEORY/WORKING PRINCIPLE: (Detailed write up with proper figures/diagrams/flow-
charts/tables/graphical plots/working formula/ equations/chemical reactions etc., as required)
A P-N junction diode conducts only in one direction. The V-I characteristics of the diode are
curve between voltage across the diode and current flowing through the diode. When external
voltage is zero, circuit is open and the potential barrier does not allow the current to flow.
Therefore, the circuit current is zero. When P-type (Anode) is connected to +ve terminal and n-
type (cathode) is connected to –ve terminal of the supply voltage is known as forward bias. The
potential barrier is reduced when diode is in the forward biased condition. At some forward
voltage, the potential barrier altogether eliminated and current starts flowing through the diode
and also in the circuit. Then diode is said to be in ON state. The current increases with increasing
forward voltage. When N-type (cathode) is connected to +ve terminal and P-type (Anode) is
connected – ve terminal of the supply voltage is known as reverse bias and the potential barrier
across the junction increases. Therefore, the junction resistance becomes very high and a very
small current (reverse saturation current) flows in the circuit. Then diode is said to be in OFF
state. The reverse bias current is due to minority charge carriers.
CIRCUIT DIAGRAM:
A) Reverse Bias:
Amity Institute of Applied Sciences
Amity University, Kolkata
B) EXPECTED GRAPH:
D. APPLICATIONS:
1. Rectifiers,
2. Signal limiters,
3. Voltage regulators,
4. Switches,
5. Signal modulator and demodulator,
6. Signal mixers,
7. Oscillators etc..
E. SAFETY MEASUREMENTS (IF ANY):
1. Check the all-power connections before switch-on the device.
2. . Parallax error should be avoided while taking the readings from the Analog meters.
3. Switch off the kits before leaving the practical instrument.
F. EXPERIMENTAL PROCEDURE:
1. PROCEDURE:
REVERSE BIAS:
1. Connections are made as per the circuit diagram
Amity Institute of Applied Sciences
Amity University, Kolkata
2. For reverse bias, the RPS +ve is connected to the cathode of the diode and RPS –ve is
connected to the anode of the diode.
3. Switch on the power supply and increase the input voltage (supply voltage) in steps of 1V.
4. Note down the corresponding current flowing through the diode voltage across the diode
for each and every step of the input voltage.
5. The readings of voltage and current are tabulated 6. Graph is plotted between voltage(VR)
on X-axis and current (IR) on Y-axis.
G. OBSERVATIONS/DATA
REVERSE BIAS:
S.NO Applied Reverse Voltage(V) Diode Voltage (Vr) Diode Current (Ir)
Volt Volt mA
Result
Calculation of Static and Dynamic Resistance for a given diode.
In forward bias condition:
Static Resistance, Rs = Vf/If
Dynamic Resistance, RD = ∆Vf /∆If
H. REFERENCES
1. B. Ghosh, Fundamental of Electronincs, Books and Allied (P) LTD. India.
