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Vlsi Unit 2

The document discusses the properties of sheet resistance in materials, specifically focusing on how it relates to thickness and resistivity. It also covers the implications of these properties in the design of MOS circuits, including capacitance and delay considerations. Additionally, it addresses scaling factors for various models used in circuit design to accommodate different parameters.

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p.hemanthsai125
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0% found this document useful (0 votes)
21 views16 pages

Vlsi Unit 2

The document discusses the properties of sheet resistance in materials, specifically focusing on how it relates to thickness and resistivity. It also covers the implications of these properties in the design of MOS circuits, including capacitance and delay considerations. Additionally, it addresses scaling factors for various models used in circuit design to accommodate different parameters.

Uploaded by

p.hemanthsai125
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Sheet kesSt

ana RS

i ImA that are nominally uniform


thin
resistanu Of B
Mathunati Cally t o
ratto
in thic kneSS
Sheet
Sheet
resistiits of ma trial to thickrness of matrial
mor Pronound w ith
tesis tanu 1A
Sheet resiatanu 1
Scaling Jhu Orera tianhistor | devi
Par of
abbec orerall
resistanto which
Power of desiqn
timing and
-W
Sheet reAibtanu modal
A

between a DppoAia faces


Conhider resistanu RAB
area
a
Cross Sectiorn
RAG PL A s unifomM

b
beetweenfaCes
tweenfates of a unifom
iS hngth iSP,
where
matcrialwhose rekis tivry
Conducting
Slab Of
and thicknes s t
width

RAB P.L

E
Of Square shape
s of Square Shape
resiktive material
I6 L ie
i,e
then P. Rs
RAB
LE
of a
dr eu
a Square.
of Square
independunt
Ks s Comple tly has
matrial
Srde Square
Atab of
for e H per
Icm per Stc quare i
a
Same resistane
eAactl hey hare sami thickness
Jhe ac ual values r assocra ttd with layers Un

a Mos CirCuit dupend bn the thickness Oflayer

and resistiviy ofs material


22904
RS Ohm per square
5Hm brbit 2Hm or blt tum

Metal 0 03

10>50 20>45 204Ss


iffus om u d

St licde 2
1 5 30 1530
I51b0
Poystlico
2X 10 2x 1ot
ntranÁistor
Channel

P tron stor 9o A
PA LD
Chonel
201

C99uNi 9d
Orbi 2um
Mupical Sheet egistanu .
5m
and 2 pm
22

comes Smaller, Ks Con tributi on


be
AS line wid th Currtny availabl
inCreases. NEh
N h
to RC delay from S- lo
ranqtng
Sheet r e s i s tan
PotystliCon adrantage s
S Oppartnt that Som of
it
offset n ter Connect reS ' s t a n u a t
Could
Scaling low Sheet
resiStanu

qate level htre-fore by


StltCdesi,which are forned by dupositing
thninkrinq
neta C)Polys?l'con Ond
hare been inreltiqated as intertonn ectung
medium
uel 2 P
Copacitanle
SAondard unit of i
Capacitan (
tan dard
unit Of
Jhe
channe Mo
MOS
9alto
Capacitanú of Tt1 dinotd
de find a dimunion

traniAtor
havin q1 k t
havin g

b q y MOS protesS
may be
evalua led for on

for 5 um 25uM
5 Hmx SuM
Anta Standard Cquare

Cana ci t a n u 4I0pf

2
or 4u
2um 2um
S tand ard quare
Area

&*1D P m
Capacitane

&X Io O 603 2PE


4 um
Vou rO PEx 0 /m 2
2Mm 2 um
Copacitonu Su Tupi
-Cal
&atu to
Chan nu 4
3 7S
itusi 0n
Capaci
Poty silito to b6 o6 tant
ubihrau o4
ual) to urkhe 0 3 O33 O 33 valuu)
Mita2 bSubsthat O2 D
fvr
O17
Mut2 t mtd) O S Mo
uel 2 Ps O 2 0 2 O 2
rjhe dilay unit (n

h Atandasd gat aa beung


Capacitanu beung
Char Qed through Onu fatur Aiz re AtAtante RA

thun clulay untt IR (n channel)xI D4


Vop

nd

or 5 H
ld x OolPF 0'lSec.

0 0 6 4 4 n Sec
For 2um T: 2x 10 io 0032 PF
tumi tkd
Svery ctose to traMi t
Delay unit

d 25 Hm VSeC to n sec Cm
HoVds 6s0Cm x 3

O13 nse C
inverter duloy

nMOS irer ter In ordur to achiere


Conkider 4:l1atio

rotio) Kpu will be 44 Fpd


1 Zpu lo Zpd
KN
Kpu 4 R 4-0
Calodid tnver tera,
Conhidur a pai of
b we totl be Cortanl
Over par
thn dulot
-
5T-

Td Zpu 4-:
2d

CM OS inverters th nMos ratio


lhi Consdering
T-

rul no
no lonqu applis
2 - 5T- 25Kn
Rpu

IOK , 20c
Rpd 2 pca

Naura asummetry o usually equal size Pullup p trais tors

ana
and type pul) doun tonAistor enist Jhe ay mmey

of reAstan Vatues Can be eltminad bynCreakn

width fPderia C.hannel a f a c t o r of 2 o 3,


A more jormal eltimation Of CmoS inverter dlay

A omotnverttr m qinuraeither chorq


or
drichargs
lood o n d thurt by rietunt. and hall
a Canactve
not zuo and estimatuo thut paiamiluy
timL a
tollowA

Rise Hm £stimatiom
in satura tion
uS asSume that P devia Stays

Charqing period of Coad Capaci tor CL


or
tor entire

modeled as
Jhe Circuit may be
to be
asSumed
AS Prs
Saturation

ase ApLvas Ivepl J


-

dsp
Yin: Ygs
2 ve
Vout Current
charge a n d
Jhis

inte its maqnitude is appro1imaely

RISe tfme model. Comstant


Vout Td Sp t
2 C
Vout p Vgs-Vepl3E
2 CL

t 2 CL Vout
p CVgs-IVe e

t Tr wnen Vout: Voo

2 VpD C ib Vtp 0:2 VpDD


T

ApC YpD -IVeplJ


VpD C 3 CL
s p lo s VpD ApYppD
Tall time EStimation:

Similary to discharqe of CL through n-tramiktdr


the Circuit model iS qiven
iven a

ds
C Vout

Vin

Tdsn t
Vout
CL

Tdsn p 2
Cvas Vo)

CLVout 3CL

Idsn n VoD
Caecitive loads
rtvin Lar
large Capacitive
driving Comporátivey
Jhe proble of
must be Propoa ted
Loads a r SeS when SignalS

chip to off Chp Generally off chup


rom on
than
may be SeveralJ Or ders higher
Capacitances

on chup LCq vaues


CL iS Offchip
For e C lo
Canacitan

Ca sCaded inver ttrAas drivers


intended to drive Carge Canacive
In verters

Present low pullup and pull down


loads must

esrStane
resiStan le values for Zpd and Zpu imply
Low tmply
LDw L:h ratios In o ther wordS, channe ls must be
Low
widi to reduu rekistan , ,in Conhequen
made very
meet this conditt on ocCupres a lar qe
ioverter to

area
Large
Lil ratto and sun
Sunu ngth
ungh
BeCause of
Low
fcature S i u the
reduud be
Can't be

region be Come s Arqnit Cont


and a
Larq
larqu
qat which in turn
rS presented at input,
Capaci tanu
a
Slows dow rat Of Chanq of voltageL
tnput
to abore Problem S to
1S to
The remedy
whrch is
Casladed invertrS, each on of
Use

Ataq by width factor f


larqer than preading a

I:f CL

Super BufferS
Jhe aSymme try of Conren tonal inverter SS

clearly undeSt ra ble and 9tres Se to


Signifiant
when inye tter S used to
delay ProblemS an

drire more Aiqni fitant CanaciEtve loads.


Vop In verting tpe Super
buffer S as
Show
T
in ique
Vou
alhen Vin 0 , i S
Vin on and 2, 4 a
obb and TiS ri Se

utckly to Vpp and Vout is VoD.

Vin VoD, , Ta, Ty are on and


lhun
Cund Vout isend)0 .
obb

Vio T2 13 T4 Vout
H
L ON OFF O OFF

ON OFP ON
H ON

Non-inrerting ype Super buffer


VoD

Vout

Vin T
Ty
Scaltng of Mos Cirtuits

Scalinq modlh Jhe mosE Lommony used medek

are Constannt electric fetd Scaling mod


Contant Voltaq Ataling modl
Combined Voltaq and dtmeion caling
modl

Scaingfactors in Ordur to acco modali th


the abore

3 modus &Scaling tactors ar used-k , V3

modl
I Combined Vot tagu
Vol tag and dinension Acaling
Acalinq
for Sappy
S choSen os S calng actor
oidu thick ness and
D and
ge VpD and 9ali
linnar
dimen Aion
other
o is used for ol)
a y

euctnic fred Sealing modul


Constant
t
voltaq Scalung mudu l
Constant

or devi Parameters
Scaltng
Scaling Sactors

Gat Area Aq
Ag: L
W and hlidth tchanne) rekpe ctivel
L, au
dunqth dimensios thut ah
As Both are
Staud by
Ag i staud by Ya

unit Area : Con


Gatu Canaci t a n u per

Co CA Eo A

A A

AS 1s Scaud by VA

Co YIp
Co is Scaud by

anu ' Cq
Gai Canaci t

Co Cor Co A Co.L hN
C
C
Acalud by
bu
A
ACalud, by
and n l ahL Atalud
AS Co
Co
V

C Ccalud by Al

Parasitic Capacitanu G
Ca o A

where
re An is area of dyulutiom requon

A d wrdth of oluputiorv
Ored t Scaud by /a and width 1%
Ataud by &
C i Acalud by Ye
Saturation Currtnt

Co C vge. Ve

Y p) P
L dealud b4
an calud by
,
Staud by ,
be cau Se Co
gsVe a
Coud by Vs

S
Scaud by Yp
Tdss

Carrent dunsi y
J: Tass aua iA
A ond
staud
As Tdss i
As
Acolud by a

Scalud by l p

per
hatt tq
Switching Enerq
Cq VpD ACcaud by
and Vpp i
i Ataud by la
Cq by
healud
Eg i
YpE
Carrler dikity in channd m

Co is
SCalud by /
be cause
Qon: Co Vgs and Vgs il Scald by

Ron i Ccaud by
Channul RestAtanu Ron

Kon
W An and
channul
in channu
mobilityr
m obilit fn
His
Carrier
Widln a c atalud by
whert
unqth, lud by )
iA
a ssumud Lostrant
n
S

Kon

bLalud by
Kom ib

ati dula T
by
is
Scaud by l) Cq tAScalud
Ta Ron Ron

Ta 1 Al
Td i s s
talud b4 Ala
requun fo
Maimum eperaung

HCo

he
f o is -Acaud by
ower DiAsi pation Per a t

and Ron 1A
V po Ac Scalud by A
A taud by'

Ps

Pgd Eq fo nd fo bby s
Acalud by and
As As Eq 1
gd 2 Y 2

both are
Atalud by V
AS
Pg16hcalud by
Pa unni
itt arta
u
disSipatiom per
ower

Pa
Scaud by
Scalud bt
and Agi
scaud bby Vp
As Pq i
Po
Acad by l p
Pa 1
Power Speed Product P

Pq Td A
T
Pai Acalud bs Vp ond
1Acalud b4 la
Pr 1A calud bby
Paramutus Combinud V¢D Conktant Euctricfreld Cors tant ha ltaqe
ACalung moclu Acaltng modul - calng modu
VDD Suppu Vo ttaq
Channul ungth
Channu hlidth
Gau oid thickr Ya
Ag Aati orto
Co hau Conaci tanuper
unit r t a
Gal Cara citanu V Va
C Panaitic
Capacitanu
on Carier durbitr
Ron Channd
re sistan
dgs Saturotion
Curent
Current dimity
4 Switthndray
Power oli SS ipattom Ys V
Per qai
Power dissi potton
Power
Per i t
unit o
Orea
Gau oulayr
Maa ore fo Va
TqunlytD
Speed Power
Produ ct Ya3
Scalinoq Ef tec didftrent scaun mocus

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