Open menu” edit”---> capacity and address midification:
Flash architecture: 1024x8 : it is 8 flash;each flash chip is :1024mb;
Die density:8gb: it is 8gb/8pcs=1gb for each flash;
Row 16,colum10,bank 2 ,bank group 2 address; like this picture: this is 8GB;
IF it is 512MB: so ROW address is :15; other colum and bank address same; DIE density become to :4GB;
Don’t change “Die quantity” !generally memory is 1 wafer;
Data bit width: Conventional memory is generally 8bit; The server memory is usually 4-
bit flash;
Signal loading: It's about 3D flash. Ordinary memory doesn't care about this;because 3D
flash don’t have on market now;
Anyway, we want modify memory capacity, only change “ROW address”;
Ranks quanity Single side / double side: if it is double side select”2”; if single side, select “1”;
Modular types: desk/notebook/server ; if you want to change to notebook memory; so you
can select notebook;
If it is ECC memory; it with ECC check ;we need select “ecc bus expansion”; if it does not support ECC. So dont need select it;
VDD voltage don’t do it!
Dram address mapping; it is used repairing;Generally, it does not need to be modified;
Check it, we changed it to 4GB Single side memory:
After modify must click “one key to write”;