EM5209

Dual Channel, Ultra-Low Resistance Load Switch

General Description Applications
The EM5209 is a small, ultra-low RON, dual
 Ultrabook
channel load switch with controlled turn on. The
 Notebooks & Netbooks
device contains two N-channel MOSFETs that can
operate over an input voltage range of 0.8V to 5.5V  Tablet PC
and can support a maximum continuous current of  Consumer electronics
6A per channel. Each switch is independently  Set-top boxes/Residental gateway
controlled by an on/off input (ON1 and ON2),  Telecom systems
which is capable of interfacing directly with
 Solid State Drives (SSD)
low-voltage control signals. In EM5209, a 220-Ω
on-chip load resistor is added for quick output Pin Configuration
discharge when switch is turned off. 1 14
The EM5209 is available in a small, VIN1 VOUT1

space-saving DFN3X2 package with integrated VIN1 VOUT1

thermal pad allowing for high power dissipation. ON1 CT1

VBIAS GND

Ordering Information ON2 CT2

Part Number Package Remark VIN2 VOUT2

EM5209VF DFN3X2-14L VIN2 VOUT2

DFN3X2 14L
TOP VIEW

Features Typical Application Circuit

 Integrated dual channel load switch
 Input voltage range : 0.8V to 5.5V VBIAS
 Ultra low RON resistance 20mΩ per channel CBIAS=1uF
VBIAS
 6A maximum continuous switch current per VIN1
4
VOUT1 VOUT1
channel VIN1 1/2 13/14

CIN1=1uF CT1 CL1=0.1uF RL1

 Low quiescent current 75uA (dual channel) Enable
12

3
 Adjustable output rising time Disable ON1
EM5209
 Quick Output Discharge (QOD) VIN2 VOUT2 VOUT2
8/9
VIN2 6/7
 DFN3X2 14-pin package with Thermal Pad CT2 CL2=0.1uF RL2
CIN2=1uF
 Bias voltage supports : 2.5V and 5.5V Enable
5
10

 Over Temperature Protection Disable ON2

11
GND

2017/09/01
A.7 1
 EM5209
Pin Assignment
Pin Name Pin No. Pin Function

Switch #1 input. Bypass this input with a ceramic capacitor to GND. Recommended voltage
VIN1 1/2 range for this pin for optimal RON performance is 0.8V to VBIAS. (VIN1≦VBIAS)
ON1 3 Active high switch #1 control input. Do not leave floating.
Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5V to
VBIAS 4 5.5V.
ON2 5 Active high switch #2 control input. Do not leave floating.
Switch #2 input. Bypass this input with a ceramic capacitor to GND. Recommended voltage
VIN2 6/7 range for this pin for optimal RON performance is 0.8V to VBIAS.(VIN2≦VBIAS)
VOUT2 8/9 Switch #2 output.
CT2 10 Switch #2 slew rate control. Can be left floating.
GND 11 Ground
CT1 12 Switch #1 slew rate control. Can be left floating.
VOUT1 13 / 14 Switch #1 output.
Thermal
15 Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND.
PAD

Function Block Diagram

VIN1 1/2

Control
ON1 3
Logic

13/14 VOUT1
CT1 12

11 GND

Charge
VBIAS 4
Pump

VIN2 6/7

Control
ON2 5
Logic

8/9 VOUT2
CT2 10

2017/09/01
A.7 2
 EM5209
Absolute Maximum Ratings (Note1)
 VIN1,2 ---------------------------------------------------------------------------------------------------- -0.3V to +6.0V
 VOUT1,2 ------------------------------------------------------------------------------------------------- -0.3V to +6.0V
 VBIAS ----------------------------------------------------------------------------------------------------- -0.3V to +6.0V
 VON1,2 ---------------------------------------------------------------------------------------------------- -0.3V to +6.0V
 Maximum Peak Switch Current Per Channel, Pulse<300uS, 2% Duty-----------------------------------8A
 Maximum Switch Current Per Channel, IMAX ---------------------------------------------------------------- 6A
 Power Dissipation, PD @ TA = 25C, DFN3X2 ---------------------------------------------------------- 1.53W
 Package Thermal Resistance, ΘJA, DFN3X2 (Note 2)----------------------------------------------- 65C/W
 Junction Temperature------------------------------------------------------------------------------------------ 150C
 Lead Temperature (Soldering, 10 sec.)-------------------------------------------------------------------- 260C
 Storage Temperature ------------------------------------------------------------------------------ 65C to 150C
 ESD susceptibility (Note3)
HBM (Human Body Mode) ---------------------------------------------------------------------------------- 2KV
MM (Machine Mode) ------------------------------------------------------------------------------------------ 200V
CDM (Charged-Device Model) ------------------------------------------------------------------------------ 1KV

Recommended Operating Conditions (Note4)

 Bias Voltage, VBIAS ---------------------------------------------------------------------------------- +2.5V to +5.5V
 Supply Input Voltage, VIN1,2 ------------------------------------------------------------------------- +0.8V to VBIAS
 ON Voltage VON1,2 High-level input voltage --------------------------------------------------- +1.2V to +5.5V
VON1,2 Low-level input voltage ------------------------------------------------------ +0V to +0.6V
 Junction Temperature ------------------------------------------------------------------------------- 40C to 125C
 Ambient Temperature --------------------------------------------------------------------------------- 40C to 85C
 Input capacitor CIN1,2 ------------------------------------------------------------------------------------------ ≧1uF

Electrical Characteristics
VBIAS= 5V, TA=25℃, unless otherwise specified
Parameter Symbol Test Conditions Min Typ Max Units
Power Supplies and Currents Section
VBIAS Quiescent current (both IOUT1 = IOUT2 = 0,
IBIAS-ON-both 75 100 uA
channels) VIN1,2 = VON1,2 = VBIAS = 5V
VBIAS Quiescent current (single IOUT1 = IOUT2 = 0, VON2 = 0V
IBIAS-ON-single 60 uA
channel) VIN1,2 = VON1 = VBIAS = 5V
VOUT1,2 = 0V, VON1,2 = 0V
VBIAS Shutdown current IBIAS-OFF 2 uA
VIN1,2 = VBIAS = 5V
VIN1,2 = 5.0V 2
VIN1,2 Off state supply current VOUT1,2 = 0V, VIN1,2 = 3.3V 2
IVIN-OFF uA
(per channel) VON1,2 = 0V VIN1,2 = 1.8V 2
VIN1,2 = 0.8V 1
ON pin leakage current ION VON = 5.5V 1 uA
Resistance Section
VIN = 5.0V 20 25
VIN = 3.3V 20 25
IOUT=200mA, VIN = 1.8V 20 25
ON-state Resistance RON mΩ
VBAIS = 5.0V VIN = 1.5V 20 25
VIN = 1.2V 20 25
VIN = 0.8V 20 25

2017/09/01
A.7 3
 EM5209
Output Pull-down Resistance RPD VIN = 5.0V, VON = 0V, IOUT = 15mA 220 300 Ω
VBIAS= 2.5V, TA=25℃, unless otherwise specified
Parameter Symbol Test Conditions Min Typ Max Units
Power Supplies and Currents Section
VBIAS Quiescent current IOUT1 = IOUT2 = 0,
IBIAS-ON-both 25 37 uA
(both channels) VIN1,2 = VON1,2 = VBIAS = 2.5V
VBIAS Quiescent current (single IOUT1 = IOUT2 = 0, VON2 = 0V
IBIAS-ON-single 20 uA
channel) VIN1,2 = VON1 = VBIAS = 2.5V
VOUT1,2 = 0V, VON1,2 = 0V
VBIAS Shutdown current IBIAS-OFF 2 uA
VIN1,2 = VBIAS = 2.5V
VIN1,2 = 2.5V 2
VIN1,2 Off state supply current VOUT1,2 = 0V, VIN1,2 = 1.8V 2
IVIN-OFF uA
(per channel) VON1,2 = 0V VIN1,2 = 1.2V 2
VIN1,2 = 0.8V 1
ON pin leakage current ION VON = 5.5V 1 uA
Resistance Section
VIN = 2.5V 22 29
VIN = 1.8V 22 29
IOUT=200mA, VIN = 1.5V 22 29
ON-state Resistance RON mΩ
VBAIS = 2.5V VIN = 1.2V 22 29
VIN = 0.8V 22 29
Output Pull-down Resistance RPD VIN = 2.5V, VON = 0V, IOUT = 1mA 260 320 Ω
ON Input Supply
High-level input voltage vON-H 1.2 V
Low-level input voltage vON-L 0.6 V
Over Temperature Protection
Over Temperature Protection TOTP 150 ℃
Hysteresis THYS 30 ℃

Switching Timing Diagrams

Switching characteristics
Parameter Symbol Test Conditions Min Typ Max Units
VIN=VON=VBIAS=5V, TA=25C
Turn-on time TON RL=10Ω, CL=0.1uF, CT=1000pF 1200 uS
Turn-off time TOFF RL=10Ω, CL=0.1uF, CT=1000pF 6 uS
Vout Rising time TR RL=10Ω, CL=0.1uF, CT=1000pF 1700 uS

2017/09/01
A.7 4
 EM5209
Vout falling time TF RL=10Ω, CL=0.1uF, CT=1000pF 7 uS
ON Delay time TD RL=10Ω, CL=0.1uF, CT=1000pF 200 uS
VIN=0.8V, VON=VBIAS=5V, TA=25C
Turn-on time TON RL=10Ω, CL=0.1uF, CT=1000pF 360 uS
Turn-off time TOFF RL=10Ω, CL=0.1uF, CT=1000pF 10 uS
Vout Rising time TR RL=10Ω, CL=0.1uF, CT=1000pF 300 uS
Vout falling time TF RL=10Ω, CL=0.1uF, CT=1000pF 4 uS
ON Delay time TD RL=10Ω, CL=0.1uF, CT=1000pF 200 uS
VIN=VON= VBIAS=3.3V, TA=25C
Turn-on time TON RL=10Ω, CL=0.1uF, CT=1000pF 1900 uS
Turn-off time TOFF RL=10Ω, CL=0.1uF, CT=1000pF 8 uS
Vout Rising time TR RL=10Ω, CL=0.1uF, CT=1000pF 2300 uS
Vout falling time TF RL=10Ω, CL=0.1uF, CT=1000pF 7 uS
ON Delay time TD RL=10Ω, CL=0.1uF, CT=1000pF 500 uS
VIN=0.8V, VON= VBIAS=3.3V, TA=25C
Turn-on time TON RL=10Ω, CL=0.1uF, CT=1000pF 900 uS
Turn-off time TOFF RL=10Ω, CL=0.1uF, CT=1000pF 10 uS
Vout Rising time TR RL=10Ω, CL=0.1uF, CT=1000pF 700 uS
Vout falling time TF RL=10Ω, CL=0.1uF, CT=1000pF 4 uS
ON Delay time TD RL=10Ω, CL=0.1uF, CT=1000pF 500 uS

Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device.
These are for stress ratings. Functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may remain possibility to affect device reliability.
Note 2. θJA is measured in the natural convection at TA=25oC on a 4-layers high effective thermal conductivity test board with
minimum copper area of JEDEC 51-7 thermal measurement standard.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.

Output Rising Time Control

The table as below contains rise time values measured on a typical device. Rise time shown below are only valid for
the power-on sequence where VIN and VBIAS are already in steady state condition, and the VON is high.

Rise Time (us) 10%-90% Vo Rising Time, VON=VBIAS=5V,RL=10Ω, CIN=1uF, CL=0.1uF, TA=25℃
CT (nF) 0.8V 1.05V 1.5V 1.8V 2.5V 3.3V 5V
0 38.5 45.4 60.1 67.4 82.4 99.7 127.6
0.22 101 123 169 189 273 343 501
0.47 164 206 294 352 489 646 979
EM5209VF 1 315 398 526 651 861 1204 1890
2.2 654 823 1140 1470 1930 2680 4180
4.7 1370 1790 2590 3080 4280 5570 8680
10 3080 4660 5290 6380 8930 12000 18100
Table1

2017/09/01
A.7 5
 EM5209

Typical Operating Characteristics

VBIAS=5V；CIN=1uF；CL=0.1uF；TA=25℃
Turn-ON from VBIAS Turn-ON from VON1&VON2
(Both Channel) (Both Channel)

Turn-OFF from VON1&VON2 Turn-ON when Heavy load (3A)

(Both Channel) (Single Channel)

VBIAS vs. Quiescent Current VBIAS vs. Quiescent Current

(Two Channel) (Single Channel)

2017/09/01
A.7 6
 EM5209

Typical Operating Characteristics

VBIAS vs. Shutdown Current (Two Channel) VIN vs. OFF-State Supply Current

RON vs. Temperature (VBIAS=5.5V) RON vs. Temperature (VBIAS=2.5V)

VIN vs. RPD (VBIAS=2.5V) VON Threshold vs. Temperature

2017/09/01
A.7 7
 EM5209

Typical Operating Characteristics

VIN vs. TR (CT=1nF, VBIAS=5.5V) VIN vs. TR (CT=1nF, VBIAS=2.5V)

VIN vs. TD (CT=1nF, VBIAS=5.5V) VIN vs.TD (CT=1nF, VBIAS=2.5V)

2017/09/01
A.7 8
 EM5209
Functional Description
On-Resistance Thermal and Layout Consideration
The MOSFET gate voltage in the EM5209 is driven EM5209 is designed to maintain a constant output
by an internal charge pump. The output voltage of load current. Due to physical limitations of the chip
the charge pump is dependent on the voltage on layout and assembly of the device the maximum
VBIAS pin. Care must be taken to ensure a sufficient switch current is 6A for each channel, the figure
VBIAS is used to keep the desired RON when given below show an example of typical PCB layout. All
the anticipated input voltage. copper traces for the VIN and VOUT pin should be
widely and short to carry the maximum continuous
ON/OFF Control current and obtain the best effect. The input and
EM5209 is enabled if the voltage of the Von pin is output capacitor (option) should be close to the
greater than logic high level and the VBIAS voltage device as possible to minimize the parasitic trace
has an adequate applied. If the voltage of the ON inductances and prevents the voltage drop when
pin is less than logic low level, the device will be load transient.
disabled. The maximum IC junction temperature should be
restricted to 125 ℃ under normal operating
Input Capacitor conditions. To calculate the maximum allowable
The EM5209 do not require an input capacitor. In dissipation, PD(MAX) for a given output current and
order to limit the voltage drop on the input supply ambient temperature, used the following equation:
caused by transient inrush current, an input bypass TJ ( MAX )  TA
PD ( MAX ) 
capacitor is recommended. A 1uF ceramic  JA
capacitor should be placed as closed as possible to Where:
the VIN pin. Higher values capacitor can help to PD(MAX)=Maximum allowable power dissipation
further reduce the voltage drop. TJ(MAX)=Maximum allowable junction temperature
(125 ℃ for the EM5209)
Output Capacitor TA=Ambient Temperature of the device
Due to the integrated body diode in the NMOS ΘJA= Junction to air thermal impedance. This
switch, the CIN greater than CL is highly parameter is also dependent upon PCB layput.
recommended. A CIN to CL ratio of 10 to 1 is
recommended for minimizing VIN drop caused by
inrush during startup. It also helps to prevent
parasitic inductance forces VOUT below GND when
switching off. Output capacitor has minimal affect
on device’s turn on slew rate time.

Slew Rate Control

The slew rate of each channel output voltage can
be controlled by the capacitor on the CT pin to
GND which provides soft start functionality. This
limits the inrush current caused by capacitor
charging.

2017/09/01
A.7 9
 EM5209
Marking Information
Device Name: EM5209VF for DFN3X2-14L

EM5209 Device Name

ABCDEFG: Date Code

Outline Drawing
D e b
8 14

L
D1

L1
E1
E

K
7 1
A1
A

A3

Dimension in mm
Dimension A A1 A3 b D E D1 E1 e L K
Min. 0.7 0.00 0.13 2.9 1.9 2.4 0.7 0.3 0.200 0.15
Typ. 0.203 3.0 2.0
Max. 0.8 0.05 0.25 3.1 2.1 2.6 1.0 0.5 0.426 0.35

Recommended minimum pads

0.4 0.25
0.7

1.0
0.15

2.7

2.6

2017/09/01
A.7 10
 EM5209

 Tape&Reel Information:3000pcs/Reel(Dimension in millimeter)

2.0±0.05 4.0±0.1
1.55±0.10

5°MAX

8.0±0.3
PIN1
1.75±0.1
3.5±0.05

3.35±0.1
FEED DIRECTION 5°MAX
1.0±0.25
4.0±0.1 1.0±0.05
8.4+2.5

ψ53.6
177.8 MAX

ψ
61

0
16
ψ

14.4

2017/09/01
A.7 11