The document provides the product specification for the isc Silicon PNP Power Transistor 2SA747, highlighting its high power dissipation of 100W and a collector-emitter breakdown voltage of -120V. It is designed for general-purpose applications and includes absolute maximum ratings and electrical characteristics. Key parameters include a collector current of -10A and a junction temperature of 150°C.
The document provides the product specification for the isc Silicon PNP Power Transistor 2SA747, highlighting its high power dissipation of 100W and a collector-emitter breakdown voltage of -120V. It is designed for general-purpose applications and includes absolute maximum ratings and electrical characteristics. Key parameters include a collector current of -10A and a junction temperature of 150°C.
The document provides the product specification for the isc Silicon PNP Power Transistor 2SA747, highlighting its high power dissipation of 100W and a collector-emitter breakdown voltage of -120V. It is designed for general-purpose applications and includes absolute maximum ratings and electrical characteristics. Key parameters include a collector current of -10A and a junction temperature of 150°C.
The document provides the product specification for the isc Silicon PNP Power Transistor 2SA747, highlighting its high power dissipation of 100W and a collector-emitter breakdown voltage of -120V. It is designed for general-purpose applications and includes absolute maximum ratings and electrical characteristics. Key parameters include a collector current of -10A and a junction temperature of 150°C.
