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Isc BU2506DF: Isc Silicon NPN Power Transistor

The document provides specifications for the BU2506DF silicon NPN power transistor from INCHANGE Semiconductor. It is designed for use in horizontal deflection circuits of color TV receivers. Key specifications include a collector-emitter sustaining voltage of 700V minimum, high switching speed, and a built-in damper diode. Absolute maximum ratings include a collector-emitter voltage of 700V and collector current of 5A continuous and 8A peak.

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Iván Alexander Chero Cabrera
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72 views2 pages

Isc BU2506DF: Isc Silicon NPN Power Transistor

The document provides specifications for the BU2506DF silicon NPN power transistor from INCHANGE Semiconductor. It is designed for use in horizontal deflection circuits of color TV receivers. Key specifications include a collector-emitter sustaining voltage of 700V minimum, high switching speed, and a built-in damper diode. Absolute maximum ratings include a collector-emitter voltage of 700V and collector current of 5A continuous and 8A peak.

Uploaded by

Iván Alexander Chero Cabrera
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor BU2506DF

DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
·High Switching Speed
·Built-in Damper Diode

APPLICATIONS
·Designed for use in horizontal deflection circuits of
color TV receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCES Collector- Emitter Voltage(VBE= 0) 1500 V

VCEO Collector-Emitter Voltage 700 V

VEBO Emitter-Base Voltage 7.5 V

IC Collector Current- Continuous 5 A

ICM Collector Current-Peak 8 A

IBB Base Current- Continuous 3 A

IBM Base Current-Peak 5 A

Collector Power Dissipation


PC 45 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -65~150 ℃

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor BU2506DF

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 700 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.79A


B 5.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.79A


B 1.1 V

VCE= 1500V ; VBE= 0 1.0


ICES Collector Cutoff Current mA
VCE= 1500V ; VBE= 0; TC=125℃ 2.0

IEBO Emitter Cutoff Current VEB= 7.5V ; IC= 0 95 208 mA

hFE-1 DC Current Gain IC= 0.3A ; VCE= 5V 12

hFE-2 DC Current Gain IC= 3A; VCE= 5V 3.8 7.5

VECF C-E Diode Forward Voltage IF= 3A 2.0 V

COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 47 pF

Switching times

tstg Storage Time IC= 3A, IB(end)= 0.67A; CFB= 9.4nF 6.0 μs
LC= 1.35mH; LB= 8μH; -VBB= 4V;
Fall Time (-dIB/dt= 0.45A/μs) 0.5 μs
tf

isc Website：www.iscsemi.cn 2

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