Shenzhen Tuofeng Semiconductor Technology co.
, LTD
4407
P-Channel Enhancement-Mode MOSFET (-30V, -12A)
PRODUCT SUMMARY
VDSS ID RDS(on) (m-ohm) Max
13 @ VGS = -20V ,ID=-10A
-30V -12A 20 @ VGS = -10V ,ID=-10A
28 @ VGS = -5V ,ID=-10A
Features
· Advanced Trench Process Technology
· High Density Cell Design for Ultra Low On-Resistance
· Lead free product is acquired
·
Pin 1 / 2 / 3: Source
Pin 4: Gate
Pin 5 / 6 / 7 / 8: Drain
SOP-8
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol Parameter Ratings Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
o
Drain Current @TA=25 C -10 A
ID
a
IDM Drain Current (Pulsed) -60 A
IAR Avalanche Current 30 A
EAR Repetitive Avalanche Energy L=0.3mH 135 mJ
o
Total Power Dissipation @TA=25 C 3
PD o
W
Total Power Dissipation @TA=75 C 2.1
IS Maximum Diode Forward Current -2.1 A
Tj, Tstg Operating Junction and Storage Temperature Range -55 to +150 °C
b
RqJA Thermal Resistance Junction to Ambient (PCB mounted) 50 °C/W
a: Repetitive Rating: Pulse width limited by the maximum junction temperation.
b: 1-in2 2oz Cu PCB board
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Shenzhen Tuofeng Semiconductor Technology co., LTD
4407
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
· Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
VDS=-24V, VGS=0V - - -1
IDSS Zero Gate Voltage Drain Current uA
IGSS Gate-Body Leakage Current VGS=±25V, VDS=0V - - ±100 nA
· On Characteristics c
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1.0 - -3.0 V
IDS(on) On State Drain Current VDS=-5V, VGS=-10V 60 - - A
RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-10A - - 14 mW
VGS=-4.5V, ID=-6A - - 20
gFS Forward Transconductance VDS=-10V, ID=-5A - 26 - S
· Dynamic Characteristics d
Ciss Input Capacitance - 2076 2500
Coss Output Capacitance VDS=-15V, VGS=0V, f=1MHz - 503 - pF
Crss Reverse Transfer Capacitance - 302 423
Rg Gate Resistance VDS=0V, VGS=0V, f=1MHz 1 2 3 W
· Switching Characteristicsd
Qg Total Gate Charge - 37.2 -
Qgs Gate-Source Charge VDS=-15V, ID=-12A, VGS=-10V - 7 - nC
Qgd Gate-Drain Charge - 10.4 -
td(on) Turn-on Delay Time - 12.4 -
tr Turn-on Rise Time VDD=-15V, RL=1.25W, - 8.2 -
nS
td(off) Turn-off Delay Time VGS=-10V, RG=3W - 25.6 -
tf Turn-off Fall Time - 12 -
trr Reverse Recovery Time - 33 40 nS
IDS=-12A, dI/ dt=100A/ uS
Qrr Reverse Recovery Charge - 23 - nC
· Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage VGS=0V, IS=-1A - - -1 V
IS Drain-Source Diode Forward Current - - -4.2 A
Note: Pulse Test: Pulse Width £300us, Duty Cycle£2%
2
Shenzhen Tuofeng Semiconductor Technology co., LTD
4407
Characteristics Curve
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Shenzhen Tuofeng Semiconductor Technology co., LTD
4407
Characteristics Curve
