[go: up one dir, main page]
Scribd
Upload
6 views2 pages

Isc N-Channel MOSFET Transistor 15N15: INCHANGE Semiconductor Product Specification

Uploaded by

Javier Dorado Sánchez

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt

Isc N-Channel MOSFET Transistor 15N15: INCHANGE Semiconductor Product Specification

Uploaded by

Javier Dorado Sánchez
6 views2 pages

Original Title

15N15

Copyright

© © All Rights Reserved

Available Formats

PDF, TXT or read online from Scribd

Did you find this document useful?

Is this content inappropriate?

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
6 views2 pages

Isc N-Channel MOSFET Transistor 15N15: INCHANGE Semiconductor Product Specification

Uploaded by

Javier Dorado Sánchez

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
You are on page 1/ 2

INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 15N15

·FEATURES
·Drain Current ID= 15A@ TC=25℃
·Drain Source Voltage-
: VDSS= 150V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.15Ω(Max)
·Fast Switching

·APPLICATIONS
·Switching regulators
·Switching converters,motor drivers,relay drivers.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 150 V

VGS Gate-Source Voltage-Continuous ±30 V

ID Drain Current-Continuous 15 A

IDM Drain Current-Single Plused 40 A

PD Total Dissipation @TC=25℃ 100 W

Tj Max. Operating Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark

PDF pdfFactory Pro www.fineprint.cn


INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 15N15

·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA 150 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.0 4.0 V

VSD Diode Forward On-voltage IS= 7.5A ;VGS= 0 1.4 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 7.5A 0.15 Ω

IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA

IDSS Zero Gate Voltage Drain Current VDS=120V; VGS= 0 1 µA

Ciss Input Capacitance 1700


VDS=25V;

VGS=0V;
Crss Reverse Transfer capacitance 350 pF
fT=1MHz
Coss Output Capacitance 750

tr Rise Time 150 225


VGS=10V;

td(on) Turn-on Delay Time ID=7.5A; 50 75

VDD=75V; ns
tf Fall Time 125 190
RGS=50Ω

td(off) Turn-off Delay Time 185 280

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

PDF pdfFactory Pro www.fineprint.cn

You might also like