The 2SK955 is an N-channel MOSFET transistor from INCHANGE Semiconductor suitable for high voltage, high speed applications. It has a drain current of 5A, drain-source voltage of 800V, and fast switching speed. The transistor is designed for uses in off-line switching power supplies, UPS systems, motor controls, and devices that require relay or solenoid drivers.
The 2SK955 is an N-channel MOSFET transistor from INCHANGE Semiconductor suitable for high voltage, high speed applications. It has a drain current of 5A, drain-source voltage of 800V, and fast switching speed. The transistor is designed for uses in off-line switching power supplies, UPS systems, motor controls, and devices that require relay or solenoid drivers.
The 2SK955 is an N-channel MOSFET transistor from INCHANGE Semiconductor suitable for high voltage, high speed applications. It has a drain current of 5A, drain-source voltage of 800V, and fast switching speed. The transistor is designed for uses in off-line switching power supplies, UPS systems, motor controls, and devices that require relay or solenoid drivers.
The 2SK955 is an N-channel MOSFET transistor from INCHANGE Semiconductor suitable for high voltage, high speed applications. It has a drain current of 5A, drain-source voltage of 800V, and fast switching speed. The transistor is designed for uses in off-line switching power supplies, UPS systems, motor controls, and devices that require relay or solenoid drivers.
APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER VALUE UNIT
VDSS Drain-Source Voltage (VGS=0) 800 V
VGS Gate-Source Voltage ±20 V
ID Drain Current-continuous@ TC=25℃ 5 A
Ptot Total Dissipation@TC=25℃ 125 W
Tj Max. Operating Junction Temperature 80 ℃
Tstg Storage Temperature Range -55~150 ℃
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INCHANGE Semiconductor isc Product Specification
isc N-Channel Mosfet Transistor 2SK955
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 800 V
VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 10mA 2.1 3.0 4.0 V
