SILICO  Silicon Controlled Rectifier is a four-layer

N current-controlling device, which is used in

devices like dimmers.
 These are used in device that require the control
CONT of high power and high voltage.
 The working of the whole region of the SCR

ROLLE
circuit predominantly relies upon the method of
its triggering.
Key characteristics and features of an SCR:

D 1. Structure: The SCR consists of three terminals:

anode (A), cathode (K), and gate (G). It is
typically made of alternating layers of p-type and
RECTI n-type semiconductor materials.
2. Operation: The SCR operates in two stable

FIERS states: the OFF state and the ON state. It remains

in the OFF state until a gate current is applied.
Once the SCR is triggered into the ON state, it
continues to conduct current even if the gate current is removed until the
forward current falls below a specific threshold called the holding current.
3. Triggering: The SCR can be triggered into the ON state by applying a
positive voltage pulse to the gate terminal. The gate pulse can be a brief
signal or a continuous signal, depending on the application.
4. Latching: Once triggered into the ON state, the SCR latches or remains
conducting until the forward current reduces below the holding current or
the anode current is interrupted.
5. Forward Blocking Voltage: The SCR can withstand a high reverse voltage,
known as the reverse breakdown voltage or peak inverse voltage (PIV), in
the OFF state. It can handle high-voltage applications.
6. Applications: SCRs are commonly used in various applications, including
motor control, power supplies, lighting control, AC power control,
rectification, voltage regulation, and industrial heating systems.
 SCRs are widely used in power electronics due to their ability to handle high
power levels and their robustness in harsh environments.
 They provide efficient and controlled power switching for various
applications that require AC power control or high-voltage rectification.

Key Terminologies of SCR

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  SCR (Silicon Controlled Rectifier): The complete name of the Device,
addressing a four-layer, three-terminal semiconductor device that conducts
current in one direction only.
 Anode (A): The Positively charged terminal of the SCR. It is the terminal
where the current enters the device.
 Cathode (K): The negatively charged terminal of the SCR. It is the
terminal where the current exit the device.
 Gate (G): The control terminal of the SCR. Applying a little current or
voltage to the gate controls the conduction of the device.
 Forward blocking Mode: The mode wherein the SCR is in a non-
conducting state, and a positive voltage is applied to the anode regarding
the cathode. In this mode, the gate signal isn’t applied or is deficient to
trigger conduction.
 Reverse Blocking Mode: The mode wherein the SCR is in a non-
conducting state, and a negative voltage is applied to the cathode
concerning the anode.
 Forward Conduction Mode: The mode wherein the SCR is in a directing
state, permitting current stream from the anode to the cathode. This is set
off by applying an adequate gate signal in the forward blocking mode.
 Latching Current (I-L): The base current expected to keep the SCR in the
leading state after it has been set off. When the SCR is locked, it stays in
the ON state regardless of whether the gate signal is taken out.
 Holding Current (I-H): The base current expected to keep up with the
SCR in the ON state after it has been triggered. In the event that the current
falls underneath the holding current, the SCR will switch off.
 Gate Triggering Current (I-GT): The base current expected at the gate to
trigger the SCR into conduction.
 Gate Triggering Voltage (V-GT): The base voltage expected at the door
to set off the SCR into conduction.
 Turn off Time (T-OFF): The time expected for the SCR to switch off
after the gate signal is taken out.
 Critical Rate of Rise of Off-State Voltage (dv/dt): The most extreme rate
at which the off-state voltage can change without triggering the SCR
accidentally.
Construction of SCR
 Silicon Controlled Rectifier (SCR) is basically a four layered, three
junction and three terminal device.
 The four layer are PNPN, the three Junction are namely J1 , J2 and J3 and
the three terminals are anode(A), cathode(K) and the gate (G) as shown in
figure
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P-N-P-N Type SCR

 A SCR is built with the four layers that comprise of the P-type and the N-
type semiconductor material.
 These are layered so that it will in general frame three intersections that are
J1, J2, and J3.
 The three terminals that are appended to it are known as anode, cathode,
and gate.
 The anode is the essential terminal through which the ongoing streams or
enters the gadget.
 Where the cathode is the terminal through which the entered current leaves
the device.
 The ongoing entering terminal is of positive extremity and the terminal
through which the current is leaving is of negative extremity.
 In the middle of between the progression of current among the terminals,
there should be a terminal that can give the control.
 This can be given by the terminal door. This terminal is at times
additionally alluded to as the terminal of control.
Considering a SCR is of P-N-P-N type.
 For this situation, as the anode is associated at the Cover that is to P-type
and the cathode is associated toward the end that is for N-type.
 Where the terminal gate is likewise associated with the p-type however it
will be the subsequent P-type in the succession.
 Thus the gate terminal is situated so that it is closer to the terminal cathode.
 In this, the intersection J1 is in the middle of between the main P-type and
the N-type.
 The second intersection J2 will in the middle of between the N-type and the
subsequent P-type layers.
 The third intersection will in the middle of between the last P-type and the
N-type layers.

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  In view of the prerequisite or the need of the applications these layers of
the Thyristor are doped.

Silicon Controlled Rectifier Symbol

Symbolic Representation of SCR

Operation of SCR
Figure shows the schematic diagram of SCR. It consists of four layers(i.e., p, n, p
and n) three terminals A(Anode), K(Cathode) and G(Gate) and three junction
J1 , J2 , and J3.

Basic operation diagram of SCR

 The anode and cathode terminals are connected to the main power circuit
wherever, the gate terminal is connected to the control circuit.
 Whenever the P layer near the anode is made more positive compared to N
layer near the cathode, Junctions J1 and J3 get forward biased.
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  Whereas, the middle junction J2 gets reverse biased. Junction J2 is known
as a junction capacitance as it acts as a capacitor in this mode.
 Due to the depletion layer formed at this junction, no current flows through
the device, but due to the drift of mobile charge carriers, a small amount of
leakage current flows through the circuit.
 As the leakage current is negligible small, the device does not conducts.
This state is known as forward blocking state or OFF state of the device, as
it blocks the forward biased voltage.
 Whenever the N layer near the cathode is more positive compared to P
layer near the anode, junctions J1 and J3 are in reverse biased and middle
junction J2 get forward biased.
 As the junctions J1 and J3 are in reverse biased condition, they do not
allow any amount of current to flow through the device. This state is
known as reverse blocking state or OFF state.
 By increasing the voltage across the anode and cathode, the width of the
depletion layer at the junction J2 may be reduced.
 At some particular voltage, J2 disappears this is due to the breakdown of
the junctions by large voltage gradient also called as avalanche breakdown.
 As junctions J1 and J3 are already in the forward biased condition, there
exists a free carrier movement from anode to cathode.
 As a result, the device starts conducting and hence it is said to be in the
conducting state or ON state.
Modes of Operation in SCR
 In SCR there are three junctions J1, J2 and J3 .
 These junctions play a very important role in the operation of SCR.
Depending on whether the junctions are forward biased or reverse biased,
the SCR will either conduct the current or will not be conduct.
 For SCR to conduct current, all the three junctions must be forward biased.
 If any one of the junctions is reverse biased the SCR will not conduct any
current and hence acts as an open switch. This can be explained by
considering the following cases,
 Reverse Blocking: In this Case the Positive Voltage is given to Cathode and
Negative Voltage is given to Anode and Gate is Open Circuited. In this case,
the junction J1 and J3 are reverse biased, whereas J2 is forward biased. As the
Junctions J1 and J3 are reverse biased so there will be no Current, But there
will be Small leakages in the Forward Junction J2 As the leakage current is
Very Small which will not Turn on SCR. Hence the SCR will be in OFF State.

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Reverse Blocking

 OFF State Forward Blocking mode: In this case, Positive Voltage is given
to Anode and Negative Voltage is given to the Cathode and Gate is Open
Circuited. The junction J2 is reverse biased, whereas junctions J1 and J3 are
forward biased, Because of the Reverse Bias Voltage the Width of the
Depletion Region which Block the Flow of Current Between J1 and J3.Again
due to which the SCR does not conduct and acts as an open switch.


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 ON State Conduction mode: The SCR will Conduct Current by Increasing
Forward Bias Voltage above the Break down Voltage and By Applying
Positive Voltage at gate terminal. In this case, all the three junctions are
forward biased and hence SCR gets turned ON and starts conducting. Here,
the SCR acts as a closed switch.

Hence, from the above analysis, it is clear that all the three junctions play
important role in the operation of SCR and they all must be forward biased in
order to turn ON the SCR.
V-I characteristics of SCR
The VI characteristics are also classified into Static and Dynamic
characteristics of SCR as follows:
Static V-I Characteristics of SCR
 The V-I characteristics of SCR is a graph between the anode current IA and
the anode-cathode voltage VA for different values of gate current IG.
 This characteristics can be drawn by considering the basic operation of the
SCR. The below figure shows the V-I characteristics which is also called as
static-cathode characteristics. It basically consist of three regions, They are
 Region 1
 Region 2
 Region 3

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Static V-I Characteristics of SCR

Region 1: When the positive terminal of the supply is connected to cathode and
the negative terminal is connected to anode with gate circuit open then SCR
operates in region 1. In this region junction J1 and J3 becomes reverse biased,
whereas the junction J2 becomes forward biased. The reverse biased junctions
(J1 and J3) acts as open circuit and the forward biased junction(J2) acts as a short
circuit, as shown in figure.
From figure it is clear that, the SCR does not conduct any current and it is said to
be in reverse blocking state or OFF state. However, a very small amount of

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leakage current flows through it. Now, if we increase the reverse voltage to the
value called as reverse breakdown voltage, then an avalanche will occur and
breaks the junction J1 and J3. Due to this a very huge amount of the current flows
through the circuit and hence the SCR starts conducting. But this method of
conducting SCR or the circuit in which it is working. Hence, we must ensure that
the reverse voltage does not exceed the reverse breakdown voltage VAK.
Region 2: When the positive terminal of the supply is connected to anode and the
negative terminal is connected to cathode with gate circuit open then SCR
operates in region 2. In this region junction J1 and J3 becomes forward biased,
whereas the junction J2 gets reverse biased. The forward biased junctions (J1 and
J3) acts as short circuit and the reverse biased junction(J2) acts as a open circuit,
as shown in figure. Even in this region, the SCR does not conduct any current
expect a very small value of the leakage current. This mode of SCR is called as
forward blocking mode. Just as the region 1, i. e., reverse blocking mode, the
SCR can be made to conduct in the forward blocking mode by increasing the
anode-cathode voltage to a value called as forward breakdown voltage(VBO).
Even this method is not recommended as it may also damage the SCR. Hence, the
SCR does not conduct even in this mode and is treated as open switch.
Region 3: When the positive terminal of the supply is connected to anode and the
negative terminal to cathode with gate circuit closed the SCR operates in region
3. In this region, all the three junctions (J1, J2 and J3) act as short circuit shown
in figure and hence conducts current. In this region SCR is said to be in a forward
conduction mode and hence acts as a closed switch. This method of conducting
the SCR is the most efficient, as it requires a voltage which is very much less
than VBO. The only extra thing we require is a gate signal for a small period of
latching current. Once the anode current attains this value, the gate losses the
control and hence can be removed. The removal of the gate signal will not have
any effect on the SCR conduction. However, if the anode current decreases to a
value called ad holding current, the SCR will once again go back to the forward
blocking gate. Hence, care must be taken that, the anode current should not drop
below the holding current after the gate signal is removed.
Dynamic or Switching Characteristics of SCR
 During turn ON and turn OFF process, thyristor is subjected to different
voltages across it and different currents through it.
 The time variation of the voltage across a thyristor and the current through
it during turn ON and turn OFF constitute the switching Characteristics of
a thyristor.
Turn ON Switching Characteristics
 A forward biased thyristor is turned ON by applying a positive gate voltage
between the gate and the cathode, as shown in figure(1).
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Circuit Diagram of a Turn ON Switching Characteristics of SCR

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Turn ON Switching Characteristics of SCR

Figure(2) , shows the waveforms of the gate current(IG), anode current(IA) and
anode to cathode voltage(VAK). The total switching period being much smaller
compared to the cycle time, IA and VAK before and after switching will appear
flat.
As shown in figure , there is a transition time “Toff” from forward OFF state to
forward ON state. This transition time is called the thyristor turn ON time and
can be divided into three separate intervals namely, They are
 Delay time (Td)

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 Rise time (Tr)
 Spread time ( Tp)
Delay Time (Td)
 It is the time between the instant at which the gate current reaches 90% of
its final value and the instant at which the anode current reaches 10% of its
final value.
 It is the time taken by the anode voltage to fall from VAK to 0.9 VAK
Rise Time (Tr)
 For a resistive load, “rise time” is the time taken by the anode current to
rise from 10% of its final value to 90% of its final value. At the same time,
the voltage VAK falls from 90% of its initial value to 10% of its initial
value.
 However, current rise and voltage fall characteristics are strongly
influenced by the type of the load. For inductive load the voltage falls
faster than the current. While, for a capacitive load, current rises rapidly.
Spread Time ( Tp)
 It is the time taken by the anode current to rise from 90% of its final value
to 100%. During this time conduction spreads over the entire cross-section
of the cathode of the thyristor.
 The spreading interval depends on the area of the cathode and on the gate
structure of the thyristor.

Turn OFF Switching Characteristics

 Once the thyristor is ON and its anode current is above the latching current
level, the gate losses control.
 It can be turned OFF only by reducing the anode current below the holding
current.
 The OFF time tq of a thyristor is defined as the time between the instant
anode current becomes zero and the instant the thyristor regains forward
blocking capability.
 If forward voltage is applied across the device, during this period the
thyristor turns ON again.
 During turn OFF time, excess minority carriers from all the four layers of
the thyristor must be removed.
 Accordingly, tq is divided into two intervals, the reverse recovery
time(tRR) and the gate recovery time(tGR), figure shows the variation of
the anode current and the anode to cathode voltage with time during turn
OFF operation for an applied sinusoidal voltage(VI).

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  The anode current becomes zero at time t1 and starts growing in the
negative direction with the same DiA / Dt till time t2.
 This negative current removes excess carriers from the junctions J1 and J3.
 At time t2 excess carriers densities at these junctions are not sufficient to
maintain the reverse current.
 The value of the anode current at time t2 is called as the reverse recovery
current(IRR).
 The reverse anode current reduces to the level of reverse saturation current.
The total charge removed from the junctions between t1 and t3 is called the
reverse recovery charge(QRR).

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  Fast decaying reverse current during the interval t2 – t3 coupled with the di
/ dt limiting inductor may cause a large reverse voltage spike to appear
across the device.
 This voltage must be limited below the VRRM rating of the device. Up to
time t2 the voltage across the device(VAK) does not change substantially
from its state value.
 However, after the reverse recovery time, the thyristor regions the reverse
blocking capacity and VAK starts following the supply voltage. At the end
of the reverse recovery period(trr) trapped charges still exist at the junction
J2 which prevents the device from blocking forward voltage just after trr.
 These trapped charges are removed only by the process of recombination.
The time taken for this recombination process to complete between t3 and
t4 is called the gate recovery time(tgr). The time interval tq = trr + tgr is
called “device turn OFF time” of the thyristor.
 No forward voltage should appear across the device before the time tq in
order to avoid its inadvertent turn ON. While designing an SCR circuit, one
must provide a time interval (tc > tq) during which a reverse voltage is
applied across the device, where tc is the circuit turn OFF time.
Types of SCR
 Discrete Plastic
 Plastic Module
 Press Pack
Discrete Plastic
 A Discrete Plastic SCR (Silicon Controlled Rectifier) alludes to an
individual SCR bundled in a plastic lodging.
 This bundling gives a defensive and protecting nook for the semiconductor
gadget, making it reasonable for different electronic applications.
Here are a few vital highlights and qualities of a Discrete Plastic SCR

CONSTRUCTION OF DISCRETE PLASTIC

Semiconductor Layers: Like other SCRs, a Discrete Plastic SCR comprises of

exchanging layers of p-type and n-type semiconductor materials, shaping a P-N-
P-N structure.
Gate Design: The SCR incorporates a gate structure, commonly made of metal or
one more conductive material, put between the anode and cathode.
Packaging of Discrete Plastic
Plastic Enclosure: The semiconductor gadget is housed in a plastic bundle that
gives mechanical security, electrical insulation, and ecological isolation.

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Lead Design: The plastic package has leads for external associations. Normal
lead setups incorporate TO-92, TO-220, or other industry-standard packages.
Plastic Module
 A Plastic Module SCR (Silicon Controlled Rectifier) alludes to a SCR
semiconductor gadget that is epitomized in a plastic module for security
and simplicity of reconciliation into electronic circuits.
 This kind of bundling joins the vigor of module-style bundling with the
advantages of a plastic nook. Here are key elements and qualities of a
Plastic Module SCR

CONSTRUCTION OF PLASTIC MODULE

Semiconductor Layers: Like other SCRs, a Plastic Module SCR comprises of

layers of p-type and n-type semiconductor materials organized in a P-N-P-N
structure.
Gate Structure: The SCR module incorporates a door structure, frequently made
of metal or one more conductive material, situated between the anode and
cathode for controlling conduction.
Packaging of Plastic Module
Plastic Module Enclosure: The semiconductor gadget is housed in a module-
style plastic bundle that gives security against ecological variables, mechanical
burdens, and electrical protection.
Lead Design: The module normally includes terminal leads or pins that work
with simple association with outside circuits. The lead setup relies upon the
particular module plan.
Module Size and Form Factor: The plastic module bundling can differ in size
and structure factor, contingent upon the power rating, expected application, and
industry norms.
Press Pack
 A Press Pack SCR (Silicon Controlled Rectifier) alludes to a SCR
semiconductor gadget that is typified in a powerful and strong press pack
lodging.
 The press pack configuration offers mechanical help and warm
administration, making it reasonable for high-power and high-voltage
applications.
Here are key elements and qualities of a Press Pack SCR

CONSTRUCTION OF PRESS PACK

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Semiconductor Layers: Like other SCRs, a Press Pack SCR comprises of layers
of p-type and n-type semiconductor materials organized in a P-N-P-N structure.
Gate Structure: The SCR incorporates an entryway structure, frequently made
of metal or one more conductive material, situated between the anode and
cathode for controlling conduction.
Packaging of Press Pack
Press Pack Enclosure: The semiconductor gadget is housed in a press pack,
which is an unbending, generally metal, nook that offers mechanical help and
warm dispersal.
Cooling Components: Press pack SCR modules frequently incorporate cooling
components, for example, heat sinks or other warm administration parts to
disperse the intensity created during activity.
Terminal Leads: The module highlights terminal leads or pins that work with
simple association with outside circuits. The lead setup relies upon the particular
module design.
Turn ON methods of an SCR
Triggering is nothing but switching the device from a non-conducting(OFF) state
to a conducting (ON) state. The various methods of thyristor triggering are as
follows,
 Forward Voltage Triggering
 Gate triggering
 Thermal triggering
 Light triggering
 dv / dt triggering
Forward Voltage Triggering
With the gate circuit open, the thyristor will not start conducting with the normal
value of forward anode to cathode voltage. However, if this voltage is increased
beyond the forward break over voltage VB an avalanche will occur and hence the
SCR starts conducting. However, this method of triggering is never
recommended, as it may damage the SCR or the whole circuit.
Gate Triggering
Gate triggering is the most efficient and the most commonly used method of
triggering the SCR. In this method, small gate pulse is applied between gate and
cathode along with the normal anode to cathode. With this, a gate current will be
established which will J2 will be forward biased. As the other two junctions
J1 and J3 was already forward biased, the SCR starts conducting.
Thermal Triggering
During forward blocking mode of SCR, junctions J1 and J3 will be forward
biased and hence acts as a short circuit; whereas, junction J2 will be reverse
biased, which acts as an open circuit. Due to this, the applied voltage will appear
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across the open terminals of junction J2 along with some leakage current. This
leakage current will increase the temperature of the junction J2 (because of
junction resistance) which in turn increases the mobile charges and hence the
current. This process is cumulative and hence may turn ON the SCR at point.
Light Triggering
In this method, the inner p-layer is radiated with a light ray of an appropriate
wavelength and intensity. With this, free charge carriers will be injected in the
junction J2 and the junction J2 will be forward biased and hence the SCR gets
turned ON. SCRS, employing this technique, are called as LASCR (Light
Activated SCR).
dv/dt (V) Triggering
We know that under forward blocking mode, junction J1 and J3 are forward
biased; whereas, junction J2 is reverse biased. The junction J2 acts as a capacitor
because of the opposite polarity carriers present at its two terminals. Hence, the
leakage current through the junction is nothing but the capacitor current given by,
ic = C dv / dt
Where, C = Junction capacitance
V = Anode to cathode voltage
If the rate of rise of the voltage V is very high i.e., the voltage across the SCR
increases within no time ic will very large (from above equation ). This large
value of current will turn ON the SCR immediately.
Advantages of SCR
 Fast switching speed: SCRs can turn on and off somewhat rapidly, which is
significant for applications requiring exact timing and control.
 Good thermal stability: SCRs can deal with high temperatures without
critical execution corruption, making them reasonable for high-temperature
conditions.
 High current and voltage handling capacity: SCRs are equipped for taking
care of high current and voltage levels, making them reasonable for power
control applications.
 Low conduction losses: When in the “on” state, SCRs have low voltage drop
and negligible power scattering, which brings about proficient conduction.
 Easy gate control: The terminating of a SCR is constrained by applying a
door current, making it simple to set off and control.
 High reliability: SCRs have a long functional life and can endure cruel
ecological circumstances, making them dependable for the overwhelming
majority modern applications.
Disadvantages of SCR

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 Gate triggering can be sensitive to noise: The door setting off instrument of
SCRs can be delicate to electrical commotion, so legitimate assurance and
separating might be vital.
 Unidirectional conduction: SCRs lead current in only one bearing, making
them unacceptable for applications that require bidirectional control of
current.
 Potential for voltage spikes: At the point when a SCR is switched off, it can
produce voltage spikes in the circuit, which might require extra defensive
parts.
 Lack of inherent turn-off capability: When a SCR is set off (turned on), it
will stay in the “on” state until the ongoing through it dips under a specific
limit or is switched. This can be a constraint in certain applications.
 Limited frequency response: SCRs are not appropriate for high-recurrence
applications because of their mood killer attributes and entryway control
constraints.
 Higher cost compared to some alternatives: At times, SCRs might be more
costly than other semiconductor gadgets, like MOSFETs or IGBTs, for
explicit applications.
Applications of SCR
 Voltage Regulation: In applications like voltage controllers and stabilizers,
SCRs are utilized to control the result voltage and keep up with it inside a
predetermined reach, guaranteeing a steady power supply to delicate gear.
 Protection Devices: SCRs can act as security gadgets in flood silencers,
where they redirect overabundance voltage and current to protect electronic
gear from voltage spikes and floods.
 Uninterruptible Power Supplies (UPS): SCRs are utilized in UPS
frameworks to change from network capacity to battery power during
blackouts, guaranteeing a nonstop and solid power supply to basic gear.
 Power Control: SCRs are broadly utilized in power control applications, for
example, dimmer switches for lighting, engine speed control, and stage point
control for warming components. They can direct how much power conveyed
to a heap by controlling the terminating point of the SCR.
 Rectification: SCRs can be utilized as high-power rectifiers in power supplies
and battery chargers, changing over rotating current (AC) into direct current
(DC). They are especially valuable in applications that require high voltage
and current levels, as modern rectifiers.
 Thyristor Control Panels: SCRs are used in thyristor control boards for the
productive control of different modern cycles and apparatus, like electric
curve heaters, welding machines, and modern stoves.

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 High-Power Heating: SCRs are utilized for exact control of electric warming
components in applications like electric ovens, furnaces, and modern heaters.
 Energy Conservation: SCRs are utilized in energy protection frameworks to
streamline the power factor and decrease energy utilization in modern plants
and offices.
 Soft Starters: SCRs are utilized in delicate starter circuits to step by step
increase the voltage and flow to electric engines, diminishing mechanical
pressure and limiting inrush flow, which can expand the life expectancy of the
engine and decrease mileage.
 Light Dimming: In dramatic lighting and a few modern settings, SCRs are
utilized to control the force of lighting apparatuses and lights, giving smooth
and exact darkening control.

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