National University of Computer and Emerging Sciences

School of Engineering Islamabad Campus

Serial No:
EE1004-Electronic Devices
Sessional I Exam
and Circuits Total Time: 1 Hour
Tuesday 26 Sep, 2023
Total Marks: 60
Course Instructor
Dr. Muhammad Awais
________________
Signature of Invigilator

____________________________ _______ __________ _____________________

Student Name Roll No Section Signature

DO NOT OPEN THE QUESTION BOOK OR START UNTIL INSTRUCTED.

Instructions:
1. Verify at the start of the exam that you have a total of three (3) questions printed
on four (4) pages including this title page.
2. Attempt all questions on the question-book and in the given order.
3. The exam is closed books, closed notes. Please see that the area in your threshold
is free of any material classified as ‘useful in the paper’ or else there may a charge
of cheating.
4. Read the questions carefully for clarity of context and understanding of meaning
and make assumptions wherever required, for neither the invigilator will address
your queries, nor the teacher/examiner will come to the examination hall for any
assistance.
5. Fit in all your answers in the provided space. You may use extra space on the last
page if required. If you do so, clearly mark question/part number on that page to
avoid confusion.
6. Use only your own stationery and calculator. If you do not have your own
calculator, use manual calculations.
7. Use only permanent ink-pens. Only the questions attempted with permanent ink-
pens will be considered. Any part of paper done in lead pencil cannot be claimed
for rechecking.

Q-1 Q-2 Q-3 Q-4 Total

Total Marks 15 15 15 15 60

Marks Obtained

Assessment of CLO CLO 1 CLO 1 CLO 2 CLO 2

Vetted By: ____________________________Vetter Signature: ____________________

Q1.
 National University of Computer and Emerging Sciences
School of Engineering Islamabad Campus
CLO-01: Describe physics, structure, operation and current-voltage characteristics of PN
Junction/diode, Bipolar Junction Transistor and MOSFETs.

[Total Marks = 15]

1. Calculate the thermal voltage at 27 ℃

[5]

Solution:

Temperature T is

T =273+27=300 K

The thermal voltage is

kT
V T=
Q
−23
1.38 × 10 × 300
V T= −19
1.6× 10

V T =0.0259 V =25.9 mV

2. Determine the diode current I D and voltage V D for the given circuit. With V D=5 V and
R=1 kΩ. Assume that the diode has a current of 1mA at a voltage of 0.7V. [10]

Figure 1.
Solution:
To begin the iteration we take diode voltage to be 0.7V. The current in the series circuit is

V DD −V D
I D=
R

5−0.7
I D= =4.3 mA
1000

The diode voltage in the first iteration can be given as

V D 1=V D +V T ln
()
I2
I1

V D=0.7 V ; V T =26 mV ; I 1=1 mA ; I 2=4.3 mA

V D 1=0.7+ 0.026 ln ( 4.31 )=0.737 V

Sessional I Exam Fall -2023 Semester Page 2 of 10
 National University of Computer and Emerging Sciences
School of Engineering Islamabad Campus
The second iteration for current will result in

V DD −V D
I D=
R

5−0.737
I D= =4.263 V
1000

The second iteration for voltage is

V D 1=V D +V T ln
() I2
I1

V D=0.7 37 V ; V T =26 mV ; I 1=4.3 mA ; I 2=4. 263 mA

V D 1=0.7 37+ 0.026 ln ( 4.263

4.3 )
=0.7 367 V

Since the second iteration values are very close to the first iteration, there is no need for
further iterations.

Sessional I Exam Fall -2023 Semester Page 3 of 10

 National University of Computer and Emerging Sciences
School of Engineering Islamabad Campus
Q2.
CLO-01: Describe physics, structure, operation and current-voltage characteristics of PN
Junction/diode, Bipolar Junction Transistor and MOSFETs.

[Total Marks = 15]

1. Calculate the intrinsic charge carriers for silicon at room temperature T =300 K . [5]

Solution:
Intrinsic charge carriers can be given as:
− Eg

ni =B T 3/ 2 e 2 kT
−1.12
−5
15 3/ 2 2 ×8.62 ×10 × 300
ni =7.3× 10 (300) e

10 carriers
ni =1.5× 10 3
cm
19
10
2. Find resistivity of (a) intrinsic silicon and (b) n-type silicon with N D= 3 The electron
.
cm
2 2
cm cm
mobility is given as μn=1350 and hole mobility of μ p=480 for intrinsic silicon.
Vs Vs
2 2
cm cm
The electron mobility is given as μn=1 110 and hole mobility of μ p=4 0 0 for
Vs Vs
doped silicon. [10]

Solution:

a) For intrinsic silicon

p=n=n i

10 carriers
p=n=1.5 ×10 3
cm

Thus resistivity is

1
ρ=
Q ( p μ p +n μn )

1
ρ= −19
1.6 × 10 ( 1.5 × 10 × 480+1.5 ×10 10 ×1350 )
10

5
ρ=2.28× 10 Ω .cm

b) For doped silicon

19
n n=N D =10
Sessional I Exam Fall -2023 Semester Page 4 of 10
 National University of Computer and Emerging Sciences
School of Engineering Islamabad Campus
2
n i
pn =
ND
2
( 1.5 ×10 10 )
pn = 19
10
3
pn=22. 3 /cm

Thus resistivity is

1
ρ=
Q ( p μ p +n μn )

1
ρ= −19
1.6 × 10 ( 22.5 × 4 0 0+ 101 9 × 1110 )
ρ=563 μ Ω . cm

Sessional I Exam Fall -2023 Semester Page 5 of 10

 National University of Computer and Emerging Sciences
School of Engineering Islamabad Campus
Q3.
CLO-02: Analyze simple diode circuits and apply diode for the design of rectifiers, voltage
regulators, limiters and clampers.

[Total Marks = 15]

1. A half wave rectifier circuit is represented in the figure. [5]

Figure 2.

Take the diode ideal model and draw the equivalent circuit for both the positive and
negative half cycles along with the output waveform.

Solution:

For positive half cycle the circuit diagram taking an ideal diode and output waveforms are:

For negative half cycle the circuit diagram taking an ideal diode and output waveforms are:

Sessional I Exam Fall -2023 Semester Page 6 of 10

 National University of Computer and Emerging Sciences
School of Engineering Islamabad Campus
2. Draw the output waveform for input voltage waveform w.r.t time in the given section.
[1.5]

3. If V m =10V calculate the pulsating DC voltage V DC at the output. [1.5]

Solution:
V DC =0.318 V m

V DC =0.318 ×10

V DC =3. 18V

4. For the full wave rectifier circuit represented in figure. For transformer ratio of 1:1 that
is V ¿ =V i. [5]

Figure 3.

Take the diode practical model and draw the equivalent circuit for both the positive and
negative half cycles along with the output waveform.
Sessional I Exam Fall -2023 Semester Page 7 of 10
 National University of Computer and Emerging Sciences
School of Engineering Islamabad Campus
Solution:
The positive half cycle the diodes D1 and D2 are forward biased as represented in the figure.
For the negative half cycle the diodes D3 and D4 are forward biased.

output waveform is:

Vk

5. If V m =10V calculate the pulsating DC voltage V DC at the output. [2]

Solution:
V DC =0. 636 ( V m−2V K )

V DC =0. 636 ( 10−2 × 0.7 )

V DC =5.469 V

Sessional I Exam Fall -2023 Semester Page 8 of 10

 National University of Computer and Emerging Sciences
School of Engineering Islamabad Campus
Q4.
CLO-02: Analyze simple diode circuits and apply diode for the design of rectifiers, voltage
regulators, limiters and clampers.

[Total Marks = 10]

For the clipper circuit draw the output waveform. The |V p|=10 V and assume practical
diode models. Explain the working of the circuit. [10]

Solution:
For the positive half the diode D1 will become forward biased at instantaneous input
voltage magnitude of V S > ( 3+0.7 ) V . The output voltage will be the exact replica of the input
sinusoidal waveform till the diode gets forward biased.

For the positive half the diode D2 will become forward biased at instantaneous input
voltage magnitude of V S ← (5+ 0.7 ) V . The output voltage will be the exact replica of the
input sinusoidal waveform till the diode gets forward biased.

The output waveform of the circuit is shown in figure.

The End!
Best of Luck!
Sessional I Exam Fall -2023 Semester Page 9 of 10
 National University of Computer and Emerging Sciences
School of Engineering Islamabad Campus
Formula Sheet
kT
V T=
Q

−23 J −5 eV
k =1.38 ×10 =8.62× 10
K K
23 −3 −3 /2
B=7.3 ×10 cm K
−19
Q=1. 6 ×10 C
V DC =0.318 V m

1
ρ=
Q ( p μ p +n μn )

V DD −V D
I D=
R

p=n=n i

V D 1=V D +V T ln
() I2
I1

2
ni
pn =
ND

− Eg
3/ 2 2 kT
ni =B T e

V DC =0. 636 ( V m−2V K )

Sessional I Exam Fall -2023 Semester Page 10 of 10