XTR105

XTR 105
XTR 105

SBOS061B FEBRUARY 1997 REVISED AUGUST 2004

4-20mA CURRENT TRANSMITTER with Sensor Excitation and Linearization

FEATURES
G G G G G G G G G G LOW UNADJUSTED ERROR TWO PRECISION CURRENT SOURCES: 800A each LINEARIZATION 2- OR 3-WIRE RTD OPERATION LOW OFFSET DRIFT: 0.4V/C LOW OUTPUT CURRENT NOISE: 30nAPP HIGH PSR: 110dB minimum HIGH CMR: 86dB minimum WIDE SUPPLY RANGE: 7.5V to 36V DIP-14 AND SO-14 PACKAGES

APPLICATIONS
G G G G INDUSTRIAL PROCESS CONTROL FACTORY AUTOMATION SCADA REMOTE DATA ACQUISITION REMOTE TEMPERATURE AND PRESSURE TRANSDUCERS
Pt100 NONLINEARITY CORRECTION USING XTR105 5 4
Nonlinearity (%)

3 2 1 0 1 200C

DESCRIPTION
The XTR105 is a monolithic 4-20mA, 2-wire current transmitter with two precision current sources. It provides complete current excitation for platinum RTD temperature sensors and bridges, instrumentation amplifiers, and current output circuitry on a single integrated circuit. Versatile linearization circuitry provides a 2nd-order correction to the RTD, typically achieving a 40:1 improvement in linearity. Instrumentation amplifier gain can be configured for a wide range of temperature or pressure measurements. Total unadjusted error of the complete current transmitter is low enough to permit use without adjustment in many applications. This includes zero output current drift, span drift, and nonlinearity. The XTR105 operates on loop power-supply voltages down to 7.5V. The XTR105 is available in DIP-14 and SO-14 surfacemount packages and is specified for the 40C to +85C industrial temperature range.

Uncorrected RTD Nonlinearity

Corrected Nonlinearity

+850C Process Temperature (C)

IR = 0.8mA IR = 0.8mA VLIN VREG + 7.5V to 36V VPS 4-20 mA RTD RG XTR105 VO RL

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1997-2004, Texas Instruments Incorporated

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ABSOLUTE MAXIMUM RATINGS(1)

Power Supply, V+ (referenced to the IO pin) ...................................... 40V Input Voltage, VIN+, VIN (referenced to the IO pin) .................... 0V to V+ Storage Temperature Range ......................................... 55C to +125C Lead Temperature (soldering, 10s) ............................................... +300C Output Current Limit ................................................................ Continuous Junction Temperature .................................................................... +165C NOTE: (1) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods may affect device reliability.

ELECTROSTATIC DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE/ORDERING INFORMATION(1)
PACKAGE DESIGNATOR N SPECIFIED TEMPERATURE RANGE 40C to +85C PACKAGE MARKING XTR105PA XTR105P XTR105UA XTR105UA XTR105U XTR105U ORDERING NUMBER XTR105PA XTR105P XTR105UA XTR105UA/2K5 XTR105U XTR105U/2K5 TRANSPORT MEDIA, QUANTITY Rails, 25 Rails, 25 Rails, 58 Tape and Reel, 2500 Rails, 58 Tape and Reel, 2500

PRODUCT XTR105

PACKAGE-LEAD DIP-14

"
XTR105

"
SO-14 Surface-Mount

"
D

"
40C to +85C

"
XTR105

"
SO-14 Surface-Mount

"
D

"
40C to +85C

"

"

"

"

NOTE: (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATION
Top View DIP and SO

VLIN IR1 12 1 IR2 14 800A 800A VREG V+ 11 10 VIN

+

IR1
VIN

1 2 3 4 5 6 7

14 IR2 13 VIN 12 VLIN 11 VREG 10 V+ 9 8 B (Base) E (Emitter)

+

13 4 RLIN 1k RG 3 2 I = 100A + VIN RG

5.1V

RG
B 100A 9 Q1

RG NC

E 8

IRET IO

VIN

975

25

NC = No Internal Connection
7 40 (R )
G

IO = 4mA + VIN

6 IRET

XTR105
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ELECTRICAL CHARACTERISTICS
At TA = +25C, V+ = 24V, and TIP29C external transistor, unless otherwise noted. XTR105P, U PARAMETER OUTPUT Output Current Equation Output Current, Specified Range Over-Scale Limit Under-Scale Limit ZERO Initial Error vs Temperature vs Supply Voltage, V+ vs Common-Mode Voltage vs VREG Output Current Noise, 0.1Hz to 10Hz SPAN Span Equation (transconductance) Initial Error (3) vs Temperature(3) Nonlinearity, Ideal Input (4) INPUT(5) Offset Voltage vs Temperature vs Supply Voltage, V+ vs Common-Mode Voltage, RTI (CMRR) Common-Mode Input Range(2) Input Bias Current vs Temperature Input Offset Current vs Temperature Impedance, Differential Common-Mode Noise, 0.1Hz to 10Hz CURRENT SOURCES Current Accuracy vs Temperature vs Power Supply, V+ Matching vs Temperature vs Power Supply, V+ Compliance Voltage, Positive Negative(2) Output Impedance Noise, 0.1Hz to 10Hz VREG(2) Accuracy vs Temperature vs Supply Voltage, V+ Output Current Output Impedance LINEARIZATION RLIN (internal) Accuracy vs Temperature POWER SUPPLY Specified Voltage Range TEMPERATURE RANGE Specification, TMIN to TMAX Operating Storage Thermal Resistance, JA DIP-14 SO-14 Surface-Mount Specification same as XTR105P and XTR105U. NOTES: (1) (2) (3) (4) (5) (6) Describes accuracy of the 4mA low-scale offset current. Does not include input amplifier effects. Can be trimmed to zero. Voltage measured with respect to IRET pin. Does not include initial error or TCR of gain-setting resistor, RG. Increasing the full-scale input range improves nonlinearity. Does not include Zero Output initial error. Current source output voltage with respect to IRET pin. OUTPUT(1) CONDITIONS MIN TYP MAX MIN XTR105PA, UA TYP MAX UNITS A mA mA mA mA A A/C A/V A/V A/mA APP A/V % ppm/C % V V/C V/V V/V V nA pA/C nA pA/C G || pF G || pF VPP A % ppm/C ppm/V % ppm/C ppm/V V V M APP V V mV/C mV/V mA k % ppm/C V V C C C C/W C/W

IREG = 0V VIN = 0V, RG =

IO = VIN (40/RG) + 4mA, VIN in Volts, RG in 4 20 24 27 30 1.8 2.2 2.6 4 5 0.07 0.04 0.02 0.3 0.03 S = 40/RG 0.05 3 0.003 50 0.4 0.3 10 1.25 5 20 0.2 5 0.1 || 1 5 || 10 0.6 25 0.5 0.2 +36 +85 +125 +125 80 100

50 0.9

V+ = 7.5V to 36V VCM = 1.25V to 3.5V(2)

Full-Scale (VIN) = 50mV Full-Scale (VIN) = 50mV VCM = 2V V+ = 7.5V to 36V VCM = 1.25V to 3.5V(2)

0.2 25 0.01 100 1.5 3 50 3.5 25 3

0.4 250 3 100 50 10

VO = 2V(6) 800 0.05 15 10 0.02 3 1 (V+) 2.5 0.2 150 0.003 5.1 0.02 0.2 1 1 75 1 0.2 25 +24 +7.5 40 55 55 0.2 35 25 0.1 15 10 0.4 75 0.2 30

V+ = 7.5V to 36V

V+ = 7.5V to 36V (V+) 3 0

0.1

0.5 100

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TYPICAL CHARACTERISTICS
At TA = +25C and V+ = 24V, unless otherwise noted.

TRANSCONDUCTANCE vs FREQUENCY 50
Transconductance (20 Log mA/V)

STEP RESPONSE RG = 2k 20mA

RG = 500 40

RG = 125

4mA/div

30

RG = 125

20

RG = 2k 4mA

10

0 100 1k 10k Frequency (Hz) 100k 1M

25s/div

COMMON-MODE REJECTION vs FREQUENCY 110 Full-Scale Input = 50mV

POWER-SUPPLY REJECTION vs FREQUENCY 140

Common-Mode Rejection (dB)

100 90 80 70 60 50 40 30 20 10 100 1k 10k 100k 1M Frequency (Hz) RG = 2k RG = 125

Power Supply Rejection (dB)

120 100 80 60 40 20 0 10 100 1k 10k 100k 1M Frequency (Hz) RG = 2k RG = 125

OVER-SCALE CURRENT vs TEMPERATURE 29 With External Transistor 28 27 V+ = 36V 26 V+ = 7.5V 25 V+ = 24V 24 23 75 50 25 0 25 50 75 100 125 Temperature (C) 2.40

UNDER-SCALE CURRENT vs TEMPERATURE

Under-Scale Current (mA)

Over-Scale Current (mA)

2.35

2.30

2.25

2.20 V+ = 7.5V to 36V 2.15 75 50 25 0 25 50 75 100 125 Temperature (C)

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TYPICAL CHARACTERISTICS (Cont.)

At TA = +25C and V+ = 24V, unless otherwise noted.
INPUT VOLTAGE AND CURRENT NOISE DENSITY vs FREQUENCY 10k 10k

ZERO OUTPUT AND REFERENCE CURRENT NOISE vs FREQUENCY 10k Input Current Noise (fA/Hz) Zero Output Current Noise (pA/Hz) 1k

Input Voltage Noise (nV/Hz)

1k

1k

100

Current Noise

100

100 Reference Current 10 1 10 100 1k 10k 100k Frequency (Hz)

10 1 10 100

Voltage Noise 1k 10k

10 100k

Frequency (Hz)

INPUT BIAS AND OFFSET CURRENT vs TEMPERATURE 25

ZERO OUTPUT CURRENT ERROR vs TEMPERATURE 4

Input Bias and Offset Current (nA)

20

Zero Output Current Error (A)

2 0 2 4 6 8 10 12

15

+IB

10 IB IOS 0 75 50 25 0 25 50 75 100 125 Temperature (C)

75

50

25

25

50

75

100

125

Temperature (C)

INPUT OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION 50 45 40

Percent of Units (%)

ZERO OUTPUT DRIFT PRODUCTION DISTRIBUTION 40 Typical Production Distribution of Packaged Units.

Typical Production Distribution of Packaged Units.

35

35 30 25 20 15 10 5 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

Percent of Units (%)

0.1% 0.02%

30 25 20 15 10 5 0

Input Offset Voltage Drift (V/C)

XTR105
SBOS061B

0.025 0.050 0.075 0.100 0.125 0.150 0.175 0.200 0.225 0.250 0.275 0.300 0.325 0.350 0.375 0.400 0.425 0.450 0.475 0.500
Zero Output Drift (A/C)

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TYPICAL CHARACTERISTICS (Cont.)

At TA = +25C and V+ = 24V, unless otherwise noted.

CURRENT SOURCE DRIFT PRODUCTION DISTRIBUTION 40 35 Typical Production Distribution of Packaged Units. IR1 AND IR2 Included. 80 70

CURRENT SOURCE MATCHING DRIFT PRODUCTION DISTRIBUTION Typical Production Distribution of Packaged Units.

Percent of Units (%)

25 20 15 10 0.04% 5 0 0.01%

Percent of Units (%)

30

60 50 40 30 20 0.07% 10 0 0.02%

10

15

20

25

30

35

40

45

50

55

60

65

70

75

10

12

14

16

18

20

22

24

26

28

Current Source Drift (ppm/C)

Current Source Matching Drift (ppm/C)

VREG OUTPUT VOLTAGE vs VREG OUTPUT CURRENT 5.35

REFERENCE CURRENT ERROR vs TEMPERATURE +0.05

Reference Current Error (%)

5.30

125C

VREG Output Voltage (V)

5.25 5.20 5.15 5.10 5.05 5.00 1.0 55C

25C

0.05

0.10

NOTE: Above 1mA, Zero Output Degrades

0.15

0.20
0.5 0 0.5 1.0 1.5 2.0

75

50

25

25

50

75

100

VREG Output Current (mA)

Temperature (C)

XTR105
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30
125

APPLICATION INFORMATION
Figure 1 shows the basic connection diagram for the XTR105. The loop power supply, VPS, provides power for all circuitry. Output loop current is measured as a voltage across the series load resistor, RL. Two matched 0.8mA current sources drive the RTD and zero-setting resistor, RZ. The instrumentation amplifier input of the XTR105 measures the voltage difference between the RTD and RZ. The value of RZ is chosen to be equal to the resistance of the RTD at the low-scale (minimum) measurement temperature. RZ can be adjusted to achieve 4mA output at the minimum measurement temperature to correct for input offset voltage and reference current mismatch of the XTR105. RCM provides an additional voltage drop to bias the inputs of the XTR105 within their common-mode input range. RCM should be bypassed with a 0.01F capacitor to minimize common-mode noise. Resistor RG sets the gain of the instrumentation amplifier according to the desired temperature range. RLIN1 provides 2nd-order linearization correction to the RTD, typically achieving a 40:1 improvement in linearity. An additional resistor is required for 3-wire RTD connections (see Figure 3).

The transfer function through the complete instrumentation amplifier and voltage-to-current converter is: IO = 4mA + VIN (40/RG) (VIN in volts, RG in ohms) where VIN is the differential input voltage. As evident from the transfer function, if no RG is used the gain is zero and the output is simply the XTR105s zero current. The value of RG varies slightly for 2-wire RTD and 3wire RTD connections with linearization. RG can be calculated from the equations given in Figure 1 (2-wire RTD connection) and Table I (3-wire RTD connection). The IRET pin is the return path for all current from the current sources and VREG. The IRET pin allows any current used in external circuitry to be sensed by the XTR105 and to be included in the output current without causing an error. The VREG pin provides an on-chip voltage source of approximately 5.1V and is suitable for powering external input circuitry (refer to Figure 6). It is a moderately accurate voltage referenceit is not the same reference used to set the 800A current references. VREG is capable of sourcing approximately 1mA of current. Exceeding 1mA may affect the 4mA zero output.

IR = 0.8mA IR = 0.8mA

Possible choices for Q1 (see text). TYPE 2N4922 TIP29C TIP31C 14 11 IR2 10 VREG V+ 7.5V to 36V PACKAGE TO-225 TO-220 TO-220

12 13 VLIN
+ VIN

1 IR1

4
(2)

IO RG XTR105 B 9 Q1 0.01F VO E IO 8 RL + VPS 4-20 mA

RG RLIN1(3)

RG
VIN

2 RTD RZ
(1)

IRET 6 IO = 4mA + VIN ( 40 ) RG NOTES: (1) RZ = RTD resistance at minimum measured temperature. RCM = 1k 0.01F (2) RG = (3) RLIN1 = 2R1(R2 +RZ) 4(R2RZ) R2 R1 RLIN(R2 R1) 2(2R1 R2 RZ)

where R1 = RTD Resistance at (TMIN + TMAX)/2 R2 = RTD Resistance at TMAX RLIN = 1k (Internal)

FIGURE 1. Basic 2-Wire RTD Temperature Measurement Circuit with Linearization.

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MEASUREMENT TEMPERATURE SPAN T (C) TMIN 200C 100C 18.7/86.6 15000 16500 60.4/80.6 27400 29400 100/78.7 33200 35700 137/75 31600 34000 174/73.2 30900 33200 210/71.5 30100 32400 249/68.1 28700 30900 280/66.5 28000 30100 316/64.9 26700 28700 348/61.9 26100 27400 374/60.4 24900 26700 200C 18.7/169 9760 11500 60.4/162 15400 17800 100/158 16200 18700 137/150 15400 17800 174/147 15000 17400 210/143 14700 16500 249/137 14000 16200 280/133 13700 15400 313/130 13000 14700 300C 18.7/255 8060 10000 60.4/243 10500 13000 100/237 10500 13000 137/226 10200 12400 174/221 9760 12100 210/215 9530 11500 249/205 9090 11000 280/200 8870 10500 400C 18.7/340 6650 8870 60.4/324 7870 10200 100/316 7680 10000 137/301 7500 9760 174/294 7150 9310 210/287 6980 8870 249/274 6650 8450 500C 18.7/422 5620 7870 60.4/402 6040 8660 100/392 6040 8250 137/383 5760 8060 174/365 5620 7680 210/357 5360 7320 600C 18.7/511 4750 7150 60.4/487 4990 7500 100/475 4870 7150 137/453 4750 6810 174/442 4530 6490 700C 18.7/590 4020 6420 60.4/562 4220 6490 100/549 4020 6340 137/536 3920 6040 800C 18.7/665 3480 5900 60.4/649 3570 5900 100/634 3480 5620 RZ /RG RLIN1 RLIN2 900C 18.7/750 3090 5360 60.4/732 3090 5360 1000C 18.7/845 2740 4990

100C

0C

100C

200C

300C

400C

NOTE: The values listed in this table are 1% resistors (in ). Exact values may be calculated from the following equations: RZ = RTD resistance at minimum measured temperature.
RG = 2(R2 RZ )(R1 RZ ) (R2 R1)

500C

600C

RLIN1 =

RLIN (R2 R1) 2(2R1 R2 RZ )

(RLIN + RG )(R2 R1) 2(2R1 R2 RZ )

700C

RLIN2 =

800C

where: R1 = RTD resistance at (TMIN + TMAX)/2 R2 = RTD resistance at TMAX RLIN = 1k (Internal)

EXAMPLE:
The measurement range is 100C to +200C for a 3-wire Pt100 RTD connection. Determine the values for RS, RG, RLIN1, and RLIN2. Look up the values from the chart or calculate the values according to the equations provided. METHOD 1: TABLE LOOK UP For TMIN = 100C and T = 300C, the 1% values are: RZ = 60.4 RG = 243 RLIN1 = 10.5k RLIN2 = 13k

METHOD 2: CALCULATION Step 1: Determine RZ, R1, and R2. RZ is the RTD resistance at the minimum measured temperature,TMIN = 100C. Using Equation 1 at right gives RZ = 60.25 (1% value is 60.4). R2 is the RTD resistance at the maximum measured temperature, TMAX = 200C. Using Equation 2 at right gives R2 = 175.84. R1 is the RTD resistance at the midpoint measured temperature, TMID = (TMIN + TMAX) /2 = 50C. R1 is NOT the average of RZ and R2. Using Equation 2 at right gives R1 = 119.40. Step 2: Calculate RG, RLIN1, and RLIN2 using equations above. RG = 242.3 (1% value is 243) RLIN1 = 10.413k (1% value is 10.5k) RLIN2 = 12.936k (1% value is 13k)

Calculation of Pt100 Resistance Values

(according to DIN IEC 751) (Equation 1) Temperature range from 200C to 0C: R(T) = 100 [1 + 3.90802 103 T 0.5802 106 T2 4.27350 1012 (T 100) T3] (Equation 2) Temperature range from 0C to +850C: R(T) = 100 (1 + 3.90802 103 T 0.5802 106 T2) where: R(T) is the resistance in at temperature T. T is the temperature in C. NOTE: Most RTD manufacturers provide reference tables for resistance values at various temperatures.

TABLE I. RZ, RG, RLIN1, and RLIN2 Standard 1% Resistor Values for 3-Wire Pt100 RTD Connection with Linearization. A negative input voltage, VIN, will cause the output current to be less than 4mA. Increasingly negative VIN will cause the output current to limit at approximately 2.2mA. Refer to the typical characteristic Under-Scale Current vs Temperature. Increasingly positive input voltage (greater than the full-scale input) will produce increasing output current according to the transfer function, up to the output current limit of approximately 27mA. Refer to the typical characteristic Over-Scale Current vs Temperature.

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EXTERNAL TRANSISTOR
Transistor Q1 conducts the majority of the signal-dependent 4-20mA loop current. Using an external transistor isolates the majority of the power dissipation from the precision input and reference circuitry of the XTR105, maintaining excellent accuracy. Since the external transistor is inside a feedback loop, its characteristics are not critical. Requirements are: VCEO = 45V min, = 40 min, and PD = 800mW. Power dissipation requirements may be lower if the loop power-supply voltage is less than 36V. Some possible choices for Q1 are listed in Figure 1. The XTR105 can be operated without this external transistor, however, accuracy will be somewhat degraded due to the internal power dissipation. Operation without Q1 is not recommended for extended temperature ranges. A resistor (R = 3.3k) connected between the IRET pin and the E (emitter) pin may be needed for operation below 0C without Q1 to ensure the full 20mA full-scale output, especially with V+ near 7.5V.

It is recommended to design for V+ equal or greater than 7.5V with loop currents up to 30mA to allow for out-of-range input conditions. The low operating voltage (7.5V) of the XTR105 allows operation directly from personal computer power supplies (12V 5%). When used with the RCV420 current loop receiver (see Figure 7), the load resistor voltage drop is limited to 3V.

ADJUSTING INITIAL ERRORS

Many applications require adjustment of initial errors. Input offset and reference current mismatch errors can be corrected by adjustment of the zero resistor, RZ. Adjusting the gain-setting resistor, RG, corrects any errors associated with gain.

2- AND 3-WIRE RTD CONNECTIONS

In Figure 1, the RTD can be located remotely simply by extending the two connections to the RTD. With this remote 2-wire connection to the RTD, line resistance will introduce error. This error can be partially corrected by adjusting the values of RZ, RG, and RLIN1. A better method for remotely located RTDs is the 3-wire RTD connection (see Figure 3). This circuit offers improved accuracy. RZs current is routed through a third wire to the RTD. Assuming line resistance is equal in RTD lines 1 and 2, this produces a small common-mode voltage that is rejected by the XTR105. A second resistor, RLIN2, is required for linearization. Note that although the 2-wire and 3-wire RTD connection circuits are very similar, the gain-setting resistor, RG, has slightly different equations: 2-wire:

10 V+ E XTR105 8 0.01F

IO 7 IRET 6 For operation without an external transistor, connect a 3.3k resistor between pin 6 and pin 8. See text for discussion of performance.

RG =

2R1(R2 + RZ ) 4(R2RZ ) R2 R1 2(R2 RZ )(R1 RZ ) R2 R1

RQ = 3.3k

3-wire:

RG =

where: RZ = RTD resistance at TMIN R1 = RTD resistance at (TMIN + TMAX)/2 FIGURE 2. Operation Without an External Transistor. R2 = RTD resistance at TMAX To maintain good accuracy, at least 1% (or better) resistors should be used for RG. Table I provides standard 1% RG resistor values for a 3-wire Pt100 RTD connection with linearization.

LOOP POWER SUPPLY

The voltage applied to the XTR105, V+, is measured with respect to the IO connection, pin 7. V+ can range from 7.5V to 36V. The loop-supply voltage, VPS, will differ from the voltage applied to the XTR105 according to the voltage drop on the current sensing resistor, RL (plus any other voltage drop in the line). If a low loop-supply voltage is used, RL (including the loop wiring resistance) must be made a relatively low value to assure that V+ remains 7.5V or greater for the maximum loop current of 20mA:
(V + ) 7.5V RL max = RWIRING 20mA

LINEARIZATION
RTD temperature sensors are inherently (but predictably) nonlinear. With the addition of one or two external resistors, RLIN1 and RLIN2, it is possible to compensate for most of this nonlinearity resulting in 40:1 improvement in linearity over the uncompensated output. See Figure 1 for a typical 2-wire RTD application with linearization. Resistor RLIN1 provides positive feedback and controls linearity correction. RLIN1 is chosen according to the desired temperature range. An equation is given in Figure 1.

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In 3-wire RTD connections, an additional resistor, RLIN2, is required. As with the 2-wire RTD application, RLIN1 provides positive feedback for linearization. RLIN2 provides an offset canceling current to compensate for wiring resistance encountered in remotely located RTDs. RLIN1 and RLIN2 are chosen such that their currents are equal. This makes the voltage drop in the wiring resistance to the RTD a commonmode signal that is rejected by the XTR105. The nearest standard 1% resistor values for RLIN1 and RLIN2 should be adequate for most applications. Table I provides the 1% resistor values for a 3-wire Pt100 RTD connection. If no linearity correction is desired, the VLIN pin should be left open. With no linearization, RG = 2500 VFS, where VFS = full-scale input range.

ERROR ANALYSIS
See Table II for how to calculate the effect various error sources have on circuit accuracy. A sample error calculation for a typical RTD measurement circuit (Pt100 RTD, 200C measurement span) is provided. The results reveal the XTR105s excellent accuracy, in this case 1.1% unadjusted. Adjusting resistors RG and RZ for gain and offset errors improves circuit accuracy to 0.32%. Note that these are worst-case errors; ensured maximum values were used in the calculations and all errors were assumed to be positive (additive). The XTR105 achieves performance that is difficult to obtain with discrete circuitry and requires less space.

OPEN-CIRCUIT PROTECTION
The optional transistor Q2 in Figure 3 provides predictable behavior with open-circuit RTD connections. It assures that if any one of the three RTD connections is broken, the XTR105s output current will go to either its high current limit ( 27mA) or low current limit ( 2.2mA). This is easily detected as an out-of-range condition.

RTDs
The text and figures thus far have assumed a Pt100 RTD. With higher resistance RTDs, the temperature range and input voltage variation should be evaluated to ensure proper common-mode biasing of the inputs. As mentioned earlier, RCM can be adjusted to provide an additional voltage drop to bias the inputs of the XTR105 within their common-mode input range.

RLIN1(1)

RLIN2(1)

13

12 1 VLIN IR1
+ VIN

IO 14 IR2 11 10 VREG V+

4
(1)

RG XTR105 B 9 Q1 0.01F

RG

3 2

RG
VIN

E IO 7

IRET EQUAL line resistances here creates a small common-mode voltage which is rejected by the XTR105. RZ(1) 6 IO

1 RCM = 1000 0.01F

(RLINE2)

(RLINE1) NOTES: (1) See Table I for resistor equations and 1% values. (2) Q2 optional. Provides predictable output current if any one RTD connection is broken: OPEN RTD TERMINAL 1 2 3 IO 2.2mA 27mA 2.2mA

RTD

Q2(2) 2N2222

(RLINE3) Resistance in this line causes a small common-mode voltage which is rejected by the XTR105. 3

FIGURE 3. Remotely Located RTDs with 3-Wire Connection.

10

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SAMPLE ERROR CALCULATION

RTD value at 4mA Output (RRTD MIN): RTD Measurement Range: Ambient Temperature Range (TA): Supply Voltage Change (V+): Common-Mode Voltage Change (CM): 100 200C 20C 5V 0.1V ERROR (ppm of Full Scale) UNADJ. ADJUST.

ERROR SOURCE INPUT Input Offset Voltage vs Common-Mode Input Bias Current Input Offset Current EXCITATION Current Reference Accuracy vs Supply Current Reference Matching vs Supply

ERROR EQUATION VOS/(VIN MAX) 106 CMRR CM/(VIN MAX) 106 IB/IREF 106 IOS RRTD MIN/(VIN MAX) 106

SAMPLE ERROR CALCULATION(1) 100V/(800A 0.38/C 200C) 106 50V/V 0.1V/(800A 0.38/C 200C) 106 0.025A/800A 106 3nA 100/(800A 0.38/C 200C) 106 Total Input Error: 0.2%/100% 106 25ppm/V 5V 0.1%/100% 800A 100/(800A 0.38/C 200C) 106 10ppm/V 5V 800A 100/(800A 0.38/C 200C) Total Excitation Error:

1645 82 31 5 1763 2000 125 1316 66 3507 2000 100 2100 1563 63 1626 493 0.5 0.2 700 395 500 626 2715 10 5 2 17 11728 (1.17%)

0 82 0 0 82 0 125 0 66 191 0 100 100 0 63 63 493 0.5 0.2 700 395 500 626 2715 10 5 2 17 3168 (0.32%)

IREF Accuracy (%)/100% 106 (IREF vs V+) V+ IREF Matching (%)/100% 800A RRTD MIN/(VIN MAX) 106 (IREF Matching vs V+) V+ RRTD MIN/(VIN MAX)

GAIN Span Nonlinearity OUTPUT Zero Output vs Supply

Span Error (%)/100% 106 Nonlinearity (%)/100% 106

0.2%/100% 106 0.01%/100% 106 Total Gain Error:

(IZERO 4mA) /16000A 106 (IZERO vs V+) V+/16000A 106

25A/16000A 106 0.2A/V 5V/16000A 106 Total Output Error: 1.5V/C 20C/(800A 0.38/C 200C) 106 20pA/C 20C/800A 106 5pA/C 20C 100W/(800A 0.38/C 200C) 106 35ppm/C 20C 15ppm/C 20C 800A 100/(800A 0.38/C 200C) 25ppm/C 20C 0.5A/C 20C/16000A 106 Total Drift Error: 0.6V/(800A 0.38/C 200C) 106 3nA 100/(800A 0.38/C 200C) 106 0.03A/16000A 106 Total Noise Error: TOTAL ERROR:

DRIFT (TA = 20C) Input Offset Voltage Drift TA/(VIN MAX) 106 Input Bias Current (typical) Drift TA/800A 106 Input Offset Current (typical) Drift TA RRTD MIN/(VIN MAX) 106 Current Reference Accuracy Drift TA Current Reference Matching Drift TA 800A RRTD MIN/(VIN MAX) Span Drift TA Zero Output Drift TA/16000A 106 NOISE (0.1Hz to 10Hz, typ) Input Offset Voltage Current Reference Zero Output

vn/(VIN MAX) 106 IREF Noise RRTD MIN/(VIN MAX) 106 IZERO Noise/16000A 106

NOTE (1): All errors are min/max and referred to input unless otherwise stated.

TABLE II. Error Calculation.

XTR105
SBOS061B

www.ti.com

11

REVERSE-VOLTAGE PROTECTION
The XTR105s low compliance rating (7.5V) permits the use of various voltage protection methods without compromising operating range. Figure 4 shows a diode bridge circuit that allows normal operation even when the voltage connection lines are reversed. The bridge causes a two diode drop (approximately 1.4V) loss in loop-supply voltage. This results in a compliance voltage of approximately 9Vsatisfactory for most applications. If a 1.4V drop in loop supply is too much, a diode can be inserted in series with the loop-supply voltage and the V+ pin. This protects against reverse output connection lines with only a 0.7V loss in loop-supply voltage.

Most surge protection zener diodes have a diode characteristic in the forward direction that will conduct excessive current, possibly damaging receiving-side circuitry if the loop connections are reversed. If a surge protection diode is used, a series diode or diode bridge should be used for protection against reversed connections.

RADIO FREQUENCY INTERFERENCE

The long wire lengths of current loops invite radio frequency (RF) interference. RF can be rectified by the sensitive input circuitry of the XTR105 causing errors. This generally appears as an unstable output current that varies with the position of loop supply or input wiring. If the RTD sensor is remotely located, the interference may enter at the input terminals. For integrated transmitter assemblies with short connections to the sensor, the interference more likely comes from the current loop connections. Bypass capacitors on the input reduce or eliminate this input interference. Connect these bypass capacitors to the IRET terminal (see Figure 5). Although the dc voltage at the IRET terminal is not equal to 0V (at the loop supply, VPS), this circuit point can be considered the transmitters ground. The 0.01F capacitor connected between V+ and IO may help minimize output interference.

SURGE PROTECTION
Remote connections to current transmitters can sometimes be subjected to voltage surges. It is prudent to limit the maximum surge voltage applied to the XTR105 to as low as practical. Various zener diodes and surge clamping diodes are specially designed for this purpose. Select a clamp diode with as low a voltage rating as possible for best protection. For example, a 36V protection diode will assure proper transmitter operation at normal loop voltages, yet will provide an appropriate level of protection against voltage surges. Characterization tests on three production lots showed no damage to the XTR105 within loop-supply voltages up to 65V.

10 V+

NOTE: (1) Zener Diode 36V: 1N4753A or General Semiconductor TransorbTM 1N6286A. Use lower voltage zener diodes with loop-power supply voltages less than 30V for increased protection. See the Surge Protection section. 0.01F

XTR105

D1(1)

1N4148 Diodes

E IO 7 IRET 6

8 The diode bridge causes a 1.4V loss in loop-supply voltage.

RL

VPS

Maximum VPS must be less than minimum voltage rating of zener diode.

FIGURE 4. Reverse Voltage Operation and Over-Voltage Surge Protection.

12

XTR105
www.ti.com
SBOS061B

12 1k 13 VLIN
+ VIN

1 IR1

14 11 IR2 VREG

10 V+

4 RLIN1 RLIN2 RG 3 1k

RG XTR105 RG
VIN

B E IO

0.01F

IRET RZ 0.01F 0.01F 6

RTD
(1)

RCM NOTE: (1) Bypass capacitors can be connected to either the IRET pin or the IO pin.

0.01F

FIGURE 5. Input Bypassing Technique with Linearization.

IREG < 1mA 5V

12 V+ Type J 1/2 OPA2335 RF 10k R 412 RG 1250 3 RG

VIN

VLIN 13
+ VIN

1 IR1

14 IR2

11 VREG

10 V+

RG XTR105 B E IO 9

RF 10k

1k 50 25 RCM = 1250

1/2 OPA2335 V

7 6
+ IO = 4mA + (VIN VIN) 40 RG

IRET

(G = 1 +

2RF = 50) R

FIGURE 6. Thermocouple Low Offset, Low Drift Loop Measurement with Diode Cold Junction Compensation.

XTR105
SBOS061B

www.ti.com

13

12 13 VLIN
+ VIN

1 IR1

1N4148 14 IR2 11 10 V+ 1 F B 9 0.01F 3 +12V VREG

4 RLIN1 5760 RG 402 3

RG XTR105 RG
VIN

Q1

16

10

E 8 IO

11

12 15 VO = 0 to 5V 14 13

RCV420

2 Pt100 100C to 600C RTD

7 IO = 4mA 20mA

2 4 5

IRET RZ 137 6

1 F 12V

RCM = 1k 0.01F NOTE: A 2-wire RTD connection is shown. For remotely located RTDs, a 3-wire RTD conection is recommended. RG becomes 383, RLIN2 is 8060. See Figure 3 and Table I.

FIGURE 7. 12V Powered Transmitter/Receiver Loop.

12 RLIN1 RLIN2 13 VLIN

+ VIN

1 IR1

1N4148 14 11 IR2 10 VREG V+ +15V 1F 0 1F Isolated Power from PWS740

RG
XTR105

RG 3 RG

B E IO

9 8

Q1

0.01F 3

15V 16 10 11

12 15 1 15 ISO122 10 2 16 V 9 7 8 VO 0 5V V+ 14 13

RCV420

RZ

2 VIN IRET 6

7 IO = 4mA 20mA

2 4 5

RTD NOTE: A 3-wire RTD connection is shown. For a 2-wire RTD connection eliminate RLIN2. RCM = 1k 0.01F

FIGURE 8. Isolated Transmitter/Receiver Loop.

14

XTR105
www.ti.com
SBOS061B

1.6mA

12 VLIN 13 VIN 4
+

1 14 IR2 11 VREG 10 V+

IR1

RG XTR105 B 9

RG 3 RG VIN IRET 6 RCM = 1k(1)

NOTE: (1) Use RCM to adjust the common-mode voltage to within 1.25V to 3.5V.

FIGURE 9. Bridge Input, Current Excitation.

XTR105
SBOS061B

www.ti.com

15

PACKAGE OPTION ADDENDUM

www.ti.com

16-Feb-2009

PACKAGING INFORMATION
Orderable Device XTR105P XTR105PA XTR105PAG4 XTR105PG4 XTR105U XTR105UA XTR105UA/2K5 XTR105UA/2K5E4 XTR105UAG4 XTR105UG4
(1)

Status (1) ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE

Package Type PDIP PDIP PDIP PDIP SOIC SOIC SOIC SOIC SOIC SOIC

Package Drawing N N N N D D D D D D

Pins Package Eco Plan (2) Qty 14 14 14 14 14 14 14 14 14 14 25 25 25 25 50 50 Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br)

Lead/Ball Finish CU NIPDAU CU NIPDAU CU NIPDAU CU NIPDAU CU NIPDAU CU NIPDAU CU NIPDAU CU NIPDAU CU NIPDAU CU NIPDAU

MSL Peak Temp (3) N / A for Pkg Type N / A for Pkg Type N / A for Pkg Type N / A for Pkg Type Level-3-260C-168 HR Level-3-260C-168 HR Level-3-260C-168 HR Level-3-260C-168 HR Level-3-260C-168 HR Level-3-260C-168 HR

2500 Green (RoHS & no Sb/Br) 2500 Green (RoHS & no Sb/Br) 50 50 Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br)

The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com 14-Jul-2012

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins Type Drawing SOIC D 14

SPQ

Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 330.0 16.4 6.5

B0 (mm) 9.0

K0 (mm) 2.1

P1 (mm) 8.0

W Pin1 (mm) Quadrant 16.0 Q1

XTR105UA/2K5

2500

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com 14-Jul-2012

*All dimensions are nominal

Device XTR105UA/2K5

Package Type SOIC

Package Drawing D

Pins 14

SPQ 2500

Length (mm) 367.0

Width (mm) 367.0

Height (mm) 38.0

Pack Materials-Page 2

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