SRR 3
SRR 3
SRR 3
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JOURNAL OF APPLIED PHYSICS 105, 014903 共2009兲
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014903-2 Sydoruk et al. J. Appl. Phys. 105, 014903 共2009兲
冕
the split rings were put inside a conducting shield, which is
共p.u.h.兲 共兲R
bound to influence the resonant frequency. The configuration Csurf = d , 共5兲
with a SR inside a shield is similar to a different metamate- g V共兲
rial element, the singly split double ring.14
On the other hand, for SRs used in magnetrons or in where is the surface charge, and V is the voltage between
metamaterial research the gap is not the sole source of ca- two symmetric points on the surface of the ring. The angles
pacitance. Quite obviously the charges on the ring’s surfaces and g are defined in Fig. 2. Both the surface charge and
also play a role providing a surface capacitance. One of our the voltage can be obtained from the electric field. Long
aims in the present paper is to find an approximate analytic before split rings were suggested as subwavelength resona-
expression for that surface capacitance. We shall do that in tors, the problem of the electric field of the split cylinders
Sec. II using two different approaches, both of them for the appeared in plasma research. Allen and Segre25 found ana-
two-dimensional 共2D兲 case: first, from the analytical expres- lytically the electric field of an infinitely long conducting
sion available for the electric field,25 and second, relying on cylinder with an infinitesimal gap. Taking their expressions
conformal mapping. In Sec. III we shall compare the relative and assuming they are valid also for the split rings, we obtain
values of the gap capacitance and of the surface capacitance,
find the resonant frequencies of the SR, show results of nu- 0V 0 V0
= cot and V= 共 − 兲, 共6兲
merical simulations, and show further that in spite of the 2D R 2
approach we can have very good approximations for rings of
moderate height. In Sec. IV, we draw conclusions and dis- where V0 is the voltage in the gap. Substituting Eq. 共6兲 into
cuss some possible applications of the results for SRs in the Eq. 共5兲 gives
terahertz range.
冕 cot
II. CAPACITANCE 共p.u.h.兲 2
Csurf = 0 d . 共7兲
The aim of this section is to obtain an analytical expres- g −
sion for the total capacitance, which consists of the gap and
surface capacitances. We shall take a known expression for This integral cannot be found analytically. We notice, how-
the parallel-plate capacitor of the gap that accounts for the ever, that for small g, the value of cot共g / 2兲 is large enough
fringing fields. Then we derive an original expression for the to neglect in the denominator of Eq. 共7兲. Then
冕
surface capacitance. We further compare the contributions of
the gap and surface capacitances to the total capacitance. 共p.u.h.兲 0 20 4R
Csurf ⬇ cot d = log . 共8兲
g 2 g
A. Gap capacitance
Here we took g = g / 共2R兲, as follows from the geometry for
If the gap is narrow its capacitance can be written as
small gaps 共see Fig. 2兲. The total capacitance of the split ring
hw with the height h and the thickness w is
Cgap = 0 + C0 , 共3兲
g
共p.u.h.兲 20共h + w兲 4R
where 0 is the free-space permittivity. The first term on the Csurf = 共h + w兲Csurf = log . 共9兲
g
right-hand side is the usual expression for the parallel-plate
capacitor formed by the gap, and the second term is a cor- The same result can be obtained from a somewhat different
rection due to the fringing fields. Several expressions for C0 approach. In the vicinity of a small gap, R Ⰷ g, the split ring
can be found in literature;3,4 we shall take the following one will look like that shown in Fig. 3. The surfaces of the split
C0 = 0共h + w + g兲. 共4兲 ring can be presented by two planes along the x-axis. Assum-
ing the planes to be infinitely long and infinitely thin, the
problem is reduced to that of 2D electrostatics. The complex
B. Surface capacitance
electric field E共x , y兲 = Ex + iEy can be then found using con-
The surface capacitance per unit height is defined as formal mapping as26
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014903-3 Sydoruk et al. J. Appl. Phys. 105, 014903 共2009兲
y 0.75
E
0.5
C [pF]
+ + + - --
-g/2 g/2 x
(a)
0.25
FIG. 3. In the vicinity of a small gap, the split ring looks like two semi-
planes. The surface charge can be found using conformal mapping. 0 gap
1.5 surface
E=
2V0
g
1− 冋 冉 冊册
2z
g
2 −1/2
, 共10兲
1
total
C [pF]
where z = x + iy; i is the complex unity, and the bar means
complex conjugation. The electric field lines are ellipses as (b)
shown schematically in Fig. 3. The surface charge density is 0.5
proportional to the y-component of the electric field in the
plane x = 0
40V0 1 0
冑冉 冊
= . 共11兲 0.01 0.03 0.1
g 2y 2
−1 xlabel
g
FIG. 4. The surface capacitance contributes from 30% to 50% of the total
The linear charge density is then capacitance and, hence, cannot be neglected. Shown are the capacitances for
冕 冕冑
⬁ ⬁ two split rings with 共a兲 h = 5 mm and 共b兲 h = 10 mm. For both, R
20V0 dy = 10 mm, w = 1 mm.
= dy = . 共12兲
g/2 1 y2 − 1
widens, the gap capacitance decreases faster than the surface
This integral does not converge at infinity; its upper limit
capacitance. For wide gaps, both capacitances contribute ap-
should be changed to a large but finite number. Since we
proximately the same amount. We conclude that, in the con-
assumed that R Ⰷ g, it is natural to take R / g as the upper
figurations studied, the surface capacitance cannot be ne-
limit
glected.
⬇
20V0
冕 1
R/g
冑y
dy
2
−1
=
20V0 4R
log .
g
共13兲
III. RESONANT FREQUENCY: COMPARISON WITH
SIMULATIONS
The total charge, q, is found by multiplying by h + w. The
surface capacitance is then Having determined the total capacitance, we can find
q 20共h + w兲 4R analytically the resonant frequency of split rings. We com-
Csurf = = log , 共14兲 pared the predictions of the analytical model to numerical
V0 g
simulations. The simulations were done in CST MICROWAVE
which coincides with Eq. 共9兲. STUDIO. The parameters of the rings were as defined in Sec.
II. The material was copper. The resonant frequency was
determined for eleven values of the gap width from 0.1 to 1
C. Total capacitance
mm.
The total capacitance is obviously the sum of the gap The results of the analytical and numerical calculations
and surface capacitances for the resonant frequency are shown in Fig. 5 共solid lines
and circles, respectively兲. Also shown for comparison is the
Ctotal = Cgap + Csurf . 共15兲
analytical calculation disregarding the surface capacitance
The question arises whether the surface capacitance con- 共dashed lines兲. Obviously taking surface capacitance into ac-
tributes much to the total capacitance or presents a negligible count results gives a very good agreement with the numerical
fraction. Figures 4共a兲 and 4共b兲 show how the gap, surface, results. It is better for h = 10 mm 关Fig. 5共b兲兴 than for h
and total capacitances depend on the gap width for two split = 5 mm 关Fig. 5共a兲兴, presumably because the higher ring is
rings with different heights. For the split ring of Fig. 4共a兲, we closer to the ideal 2D geometry we considered. As can be
took h = 5 mm, and for that of Fig. 4共b兲, h = 10 mm. For expected, the agreement is somewhat worse for wider gaps.
both rings, R = 10 mm, w = 1 mm. These geometrical param- Similarly good agreement was obtained for different values
eters are close to those of a recent experimental study.9 of the thickness, w.
If the gap is narrow, the gap capacitance dominates, but For w = 1 mm, the agreement deteriorates as the height
not enough to neglect the surface capacitance. As the gap decreases. Rings with smaller heights have shorter resonant
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014903-4 Sydoruk et al. J. Appl. Phys. 105, 014903 共2009兲
Downloaded 17 Mar 2013 to 130.126.32.13. Redistribution subject to AIP license or copyright; see http://jap.aip.org/about/rights_and_permissions