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Lecture 22

This document describes the input, output, and CE current amplification factor characteristics of a bipolar junction transistor (BJT). It also discusses the relation between alpha (α) and beta (β), DC biasing configurations including fixed bias and voltage divider bias, and how capacitors are treated in DC analysis. The key characteristics are: the input characteristics plot IB vs VBE, the output characteristics plot IC vs VCE for different values of IB, and the CE current gain is the ratio of IC to IB.

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41 views2 pages

Lecture 22

This document describes the input, output, and CE current amplification factor characteristics of a bipolar junction transistor (BJT). It also discusses the relation between alpha (α) and beta (β), DC biasing configurations including fixed bias and voltage divider bias, and how capacitors are treated in DC analysis. The key characteristics are: the input characteristics plot IB vs VBE, the output characteristics plot IC vs VCE for different values of IB, and the CE current gain is the ratio of IC to IB.

Uploaded by

red titan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Input Characteristics:

· Graph is plotted between input voltage VBE and input


current IB keeping output voltage VCE as a parameter.
· Characteristics are similar to that of a forward biased
diode. For a constant VBE the magnitude of the base
current decreases. With increasing VCE. This is because
increasing VCE the effective base width and hence the
recombination base current decreases.

Output Characteristics:

· Graph is plotted between output voltage VCE and


output current IC keeping input current IB as a
parameter.
· Active Region:
In this region JEB is forward biased and JCB is
reverse biased. Output characteristics in the active
region are not horizontal lines because for a fixed
value of IB the magnitude of collector current
increases with VCE due to early effect.
IC =α IE+ ICBO (CB)
= α( IE+ IE)+ ICBO
IC= α/(1- α) IB + ICBO/(1- α)
IC= βIB + ICEO
Since the leakage current ICEO is very small IC ≈ βIB
· Cut off Region:
Here both the junctions are reverse biased. The region below IB=0 characteristic is
called as cut off region. In this region IC= ICEO (Collector to emitter leakage current with
base open)
· Saturation Region:
Here both the junctions are forward biased by at least the cutin voltage. The current IC
is independent of IB.

CE Current Amplification Factor:


It is the ratio of output collector current to the input baser current.
IC
DC current gain b dc = practically 50-400
IB
DIC
AC current gain b ac = with VCE constant
DIB
Relation between α and :

IC IC
IE = IC + IB a= and b =
IE IB
IC IC b a
= IC + a= b=
a b 1+ b 1-a
DC Biasing:

Biasing is the application of external dc supply to establish a fixed level of current and
voltage. Transistor operates only at a particular point of the characteristics called operating point
or Q-point/ Quiescent point.

Types of Biasing

1. Fixed Bias Configuration


2. Fixed bias with emitter resistor
3. Voltage divider bias configuration
4. Collector feedback configuration

Fixed Bias Configuration:

It is the simplest transistor DC bias configuration using npn transistor. In the DC analysis
capacitors are open circuited as shown in the figure.

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