512Mb, 1.

8V Multiple I/O Serial Flash Memory

Features

Micron Serial NOR Flash Memory

1.8V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase
MT25QU512ABB

Features Options Marking

• Voltage
• SPI-compatible serial bus interface – 1.7–2.0V U
• Single and double transfer rate (STR/DTR) • Density
• Clock frequency – 512Mb 512
– 166 MHz (MAX) for all protocols in STR • Device stacking
– 90 MHz (MAX) for all protocols in DTR – Monolithic A
• Dual/quad I/O commands for increased through- • Device generation B
put up to 90 MB/s • Die revision B
• Supported protocols in both STR and DTR • Pin configuration
– Extended I/O protocol – HOLD# 1
– Dual I/O protocol – RESET and HOLD# 8
– Quad I/O protocol • Sector Size
• Execute-in-place (XIP) – 64KB E
• PROGRAM/ERASE SUSPEND operations • Standard security 0
• Volatile and nonvolatile configuration settings • Special options
• Software reset – Standard S
• Additional reset pin for selected part numbers – Automotive A
• 3-byte and 4-byte address modes – enable memory • Packages – JEDEC-standard, RoHS-
access beyond 128Mb compliant
• Dedicated 64-byte OTP area outside main memory – 24-ball T-PBGA 05/6mm x 8mm 12
– Readable and user-lockable (TBGA24)
– Permanent lock with PROGRAM OTP command – Wafer level chip-scale package, 27 56
• Erase capability balls, 9 active balls (XFWLBGA 0.5P)
– Bulk erase – 16-pin SOP2, 300 mils SF
– Sector erase 64KB uniform granularity (SO16W, SO16-Wide, SOIC-16)
– Subsector erase 4KB, 32KB granularity – W-PDFN-8 8mm x 6mm (MLP8 8mm W9
• Security and write protection x 6mm)
– Volatile and nonvolatile locking and software • Operating temperature range
write protection for each 64KB sector – From –40°C to +85°C IT
– Nonvolatile configuration locking – From –40°C to +105°C AT
– Password protection
– Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
– Program/erase protection during power-up
– CRC detects accidental changes to raw data
• Electronic signature
– JEDEC-standard 3-byte signature (BA20h)
– Extended device ID: two additional bytes identify
device factory options
• JESD47H-compliant
– Minimum 100,000 ERASE cycles per sector
– Data retention: 20 years (TYP)

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Products and specifications discussed herein are subject to change by Micron without notice.
 512Mb, 1.8V Multiple I/O Serial Flash Memory
Features

Part Number Ordering

Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers
by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.

Figure 1: Part Number Ordering Information

MT 25Q L xxx A BA 1 E SF - 0 S IT ES

Micron Technology Production Status

Blank = Production
Part Family ES = Engineering samples
25Q = SPI NOR QS = Qualification samples

Voltage Operating Temperature

L = 2.7–3.6V IT = –40°C to +85°C
U = 1.7–2.0V AT = –40°C to +105°C (Grade 2 AEC-Q100)

Density Special Options

064 = 64Mb (8MB) S = Standard
128 = 128Mb (16MB) A = Automotive quality
256 = 256Mb (32MB)
512 = 512Mb (64MB) Security Features
01G = 1Gb (128MB) 0 = Standard default security
02G = 2Gb (256MB)
Package Codes
Stack 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array)
A = 1 die/1 S# 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array)
B = 2 die/1 S# SC = 8-pin SOP2, 150 mil
C = 4 die/1 S# SE = 8-pin SOP2, 208 mil
SF = 16-pin SOP2, 300 mil
Device Generation W7 = 8-pin W-PDFN, 6 x 5mm
B = 2nd generation W9 = 8-pin W-PDFN, 8 x 6mm
5x = WLCSP package 1
Die Revision
A = Rev. A Sector size
B = Rev. B E = 64KB sectors, 4KB and 32KB sub-sectors

Pin Configuration Option

1 = HOLD# pin
3 = RESET# pin
8 = RESET# & HOLD# pin

Note: 1. WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Features

Contents
Device Description ........................................................................................................................................... 8
Device Logic Diagram ................................................................................................................................... 9
Advanced Security Protection ....................................................................................................................... 9
Signal Assignments – Package Code: 12 ........................................................................................................... 10
Signal Assignments – Package Code: 56 ........................................................................................................... 11
Signal Assignments – Package Code: SF ........................................................................................................... 12
Signal Assignments – Package Code: W9 .......................................................................................................... 12
Signal Descriptions ......................................................................................................................................... 13
Package Dimensions – Package Code: 12 ......................................................................................................... 14
Package Dimensions – Package Code: 56 ......................................................................................................... 15
Package Dimensions – Package Code: SF ......................................................................................................... 16
Package Dimensions – Package Code: W9 ........................................................................................................ 17
Memory Map – 512Mb Density ....................................................................................................................... 18
Status Register ................................................................................................................................................ 19
Block Protection Settings ............................................................................................................................ 20
Flag Status Register ......................................................................................................................................... 21
Extended Address Register .............................................................................................................................. 22
Internal Configuration Register ....................................................................................................................... 23
Nonvolatile Configuration Register .................................................................................................................. 24
Volatile Configuration Register ........................................................................................................................ 26
Supported Clock Frequencies ..................................................................................................................... 27
Enhanced Volatile Configuration Register ........................................................................................................ 29
Security Registers ........................................................................................................................................... 30
Sector Protection Security Register .................................................................................................................. 31
Nonvolatile and Volatile Sector Lock Bits Security ............................................................................................ 32
Volatile Lock Bit Security Register .................................................................................................................... 32
Device ID Data ............................................................................................................................................... 33
Serial Flash Discovery Parameter Data ............................................................................................................. 34
Command Definitions .................................................................................................................................... 35
Software RESET Operations ............................................................................................................................ 41
RESET ENABLE and RESET MEMORY Commands ....................................................................................... 41
READ ID Operations ....................................................................................................................................... 42
READ ID and MULTIPLE I/O READ ID Commands ...................................................................................... 42
READ SERIAL FLASH DISCOVERY PARAMETER Operation .............................................................................. 43
READ SERIAL FLASH DISCOVERY PARAMETER Command ......................................................................... 43
READ MEMORY Operations ............................................................................................................................ 44
4-BYTE READ MEMORY Operations ................................................................................................................ 45
READ MEMORY Operations Timings ............................................................................................................... 46
WRITE ENABLE/DISABLE Operations ............................................................................................................. 53
READ REGISTER Operations ........................................................................................................................... 54
WRITE REGISTER Operations ......................................................................................................................... 55
CLEAR FLAG STATUS REGISTER Operation ..................................................................................................... 57
PROGRAM Operations .................................................................................................................................... 58
4-BYTE PROGRAM Operations ........................................................................................................................ 59
PROGRAM Operations Timings ....................................................................................................................... 59
ERASE Operations .......................................................................................................................................... 62
SUSPEND/RESUME Operations ..................................................................................................................... 64
PROGRAM/ERASE SUSPEND Operations .................................................................................................... 64
PROGRAM/ERASE RESUME Operations ...................................................................................................... 64
ONE-TIME PROGRAMMABLE Operations ....................................................................................................... 66

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Features

READ OTP ARRAY Command ...................................................................................................................... 66

PROGRAM OTP ARRAY Command .............................................................................................................. 66
ADDRESS MODE Operations .......................................................................................................................... 68
QUAD PROTOCOL Operations ........................................................................................................................ 68
ENTER or RESET QUAD INPUT/OUTPUT MODE Command ....................................................................... 68
CYCLIC REDUNDANCY CHECK Operations .................................................................................................... 69
State Table ..................................................................................................................................................... 71
XIP Mode ....................................................................................................................................................... 72
Activate or Terminate XIP Using Volatile Configuration Register ................................................................... 72
Activate or Terminate XIP Using Nonvolatile Configuration Register ............................................................. 72
Confirmation Bit Settings Required to Activate or Terminate XIP .................................................................. 73
Terminating XIP After a Controller and Memory Reset ................................................................................. 73
Power-Up and Power-Down ............................................................................................................................ 74
Power-Up and Power-Down Requirements .................................................................................................. 74
Power Loss and Interface Rescue ..................................................................................................................... 76
Recovery .................................................................................................................................................... 76
Power Loss Recovery ................................................................................................................................... 76
Interface Rescue ......................................................................................................................................... 76
Initial delivery status .................................................................................................................................. 77
Absolute Ratings and Operating Conditions ..................................................................................................... 78
DC Characteristics and Operating Conditions .................................................................................................. 80
AC Characteristics and Operating Conditions .................................................................................................. 82
AC Reset Specifications ................................................................................................................................... 84
Program/Erase Specifications ......................................................................................................................... 87
Revision History ............................................................................................................................................. 88
Rev. D – 06/16 ............................................................................................................................................. 88
Rev. C – 06/16 ............................................................................................................................................. 88
Rev. B – 03/16 ............................................................................................................................................. 88
Rev. A – 6/15 ............................................................................................................................................... 88

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Features

List of Figures
Figure 1: Part Number Ordering Information .................................................................................................... 2
Figure 2: Block Diagram .................................................................................................................................. 8
Figure 3: Logic Diagram ................................................................................................................................... 9
Figure 4: 24-Ball T-BGA, 5 x 5 (Balls Down) ..................................................................................................... 10
Figure 5: 27-Ball XFWLBGA (Top View) .......................................................................................................... 11
Figure 6: 16-Pin, Plastic Small Outline – SO16 (Top View) ................................................................................ 12
Figure 7: 8-Pin, W-PDFN (Top View) .............................................................................................................. 12
Figure 8: 24-Ball T-PBGA (5 x 5 ball grid array) – 6mm x 8mm .......................................................................... 14
Figure 9: 27-Ball XFWLBGA ........................................................................................................................... 15
Figure 10: 16-Pin SOP2 – 300 mils Body Width ................................................................................................ 16
Figure 11: W-PDFN-8 (MLP8) – 8mm x 6mm .................................................................................................. 17
Figure 12: Memory Array Segments ................................................................................................................ 22
Figure 13: Internal Configuration Register ...................................................................................................... 23
Figure 14: Sector and Password Protection ..................................................................................................... 30
Figure 15: RESET ENABLE and RESET MEMORY Command ........................................................................... 41
Figure 16: READ ID and MULTIPLE I/O READ ID Commands ......................................................................... 42
Figure 17: READ SERIAL FLASH DISCOVERY PARAMETER Command – 5Ah ................................................... 43
Figure 18: READ – 03h/13h3 ........................................................................................................................... 46
Figure 19: FAST READ – 0Bh/0Ch3 ................................................................................................................. 46
Figure 20: DUAL OUTPUT FAST READ – 3Bh/3Ch3 ......................................................................................... 47
Figure 21: DUAL INPUT/OUTPUT FAST READ – BBh/BCh3 ............................................................................ 47
Figure 22: QUAD OUTPUT FAST READ – 6Bh/6Ch3 ........................................................................................ 48
Figure 23: QUAD INPUT/OUTPUT FAST READ – EBh/ECh3 ............................................................................ 48
Figure 24: QUAD INPUT/OUTPUT WORD READ – E7h 3 ................................................................................. 49
Figure 25: DTR FAST READ – 0Dh/E0h3 .......................................................................................................... 50
Figure 26: DTR DUAL OUTPUT FAST READ – 3Dh3 ........................................................................................ 50
Figure 27: DTR DUAL INPUT/OUTPUT FAST READ – BDh3 ............................................................................ 51
Figure 28: DTR QUAD OUTPUT FAST READ – 6Dh3 ........................................................................................ 52
Figure 29: DTR QUAD INPUT/OUTPUT FAST READ – EDh3 ............................................................................ 52
Figure 30: WRITE ENABLE and WRITE DISABLE Timing ................................................................................. 53
Figure 31: READ REGISTER Timing ................................................................................................................ 54
Figure 32: WRITE REGISTER Timing .............................................................................................................. 56
Figure 33: CLEAR FLAG STATUS REGISTER Timing ........................................................................................ 57
Figure 34: PAGE PROGRAM Command .......................................................................................................... 59
Figure 35: DUAL INPUT FAST PROGRAM Command ...................................................................................... 60
Figure 36: EXTENDED DUAL INPUT FAST PROGRAM Command ................................................................... 60
Figure 37: QUAD INPUT FAST PROGRAM Command ..................................................................................... 61
Figure 38: EXTENDED QUAD INPUT FAST PROGRAM Command ................................................................... 61
Figure 39: SUBSECTOR and SECTOR ERASE Timing ....................................................................................... 63
Figure 40: BULK ERASE Timing ...................................................................................................................... 63
Figure 41: PROGRAM/ERASE SUSPEND or RESUME Timing .......................................................................... 65
Figure 42: READ OTP Command .................................................................................................................... 66
Figure 43: PROGRAM OTP Command ............................................................................................................ 67
Figure 44: XIP Mode Directly After Power-On .................................................................................................. 72
Figure 45: Power-Up Timing .......................................................................................................................... 75
Figure 46: AC Timing Input/Output Reference Levels ...................................................................................... 79
Figure 47: Reset AC Timing During PROGRAM or ERASE Cycle ........................................................................ 85
Figure 48: Reset Enable and Reset Memory Timing ......................................................................................... 85
Figure 49: Serial Input Timing ........................................................................................................................ 85
Figure 50: Write Protect Setup and Hold During WRITE STATUS REGISTER Operation (SRWD = 1) ................... 86

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Features

Figure 51: Hold Timing .................................................................................................................................. 86

Figure 52: Output Timing .............................................................................................................................. 86

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Features

List of Tables
Table 1: Signal Descriptions ........................................................................................................................... 13
Table 2: Memory Map .................................................................................................................................... 18
Table 3: Status Register .................................................................................................................................. 19
Table 4: Protected Area .................................................................................................................................. 20
Table 5: Flag Status Register ........................................................................................................................... 21
Table 6: Extended Address Register ................................................................................................................ 22
Table 7: Nonvolatile Configuration Register .................................................................................................... 24
Table 8: Volatile Configuration Register .......................................................................................................... 26
Table 9: Sequence of Bytes During Wrap ......................................................................................................... 26
Table 10: Clock Frequencies – STR (in MHz) ................................................................................................... 27
Table 11: Clock Frequencies – DTR (in MHz) .................................................................................................. 28
Table 12: Enhanced Volatile Configuration Register ........................................................................................ 29
Table 13: Sector Protection Register ............................................................................................................... 31
Table 14: Global Freeze Bit ............................................................................................................................. 31
Table 15: Nonvolatile and Volatile Lock Bits .................................................................................................... 32
Table 16: Volatile Lock Bit Register ................................................................................................................. 32
Table 17: Device ID Data ............................................................................................................................... 33
Table 18: Extended Device ID Data, First Byte ................................................................................................. 33
Table 19: Command Set ................................................................................................................................. 35
Table 20: RESET ENABLE and RESET MEMORY Operations ............................................................................ 41
Table 21: READ ID and MULTIPLE I/O READ ID Operations ........................................................................... 42
Table 22: READ MEMORY Operations ............................................................................................................ 44
Table 23: 4-BYTE READ MEMORY Operations ................................................................................................ 45
Table 24: WRITE ENABLE/DISABLE Operations ............................................................................................. 53
Table 25: READ REGISTER Operations ........................................................................................................... 54
Table 26: WRITE REGISTER Operations .......................................................................................................... 55
Table 27: CLEAR FLAG STATUS REGISTER Operation ..................................................................................... 57
Table 28: PROGRAM Operations .................................................................................................................... 58
Table 29: 4-BYTE PROGRAM Operations ........................................................................................................ 59
Table 30: ERASE Operations ........................................................................................................................... 62
Table 31: SUSPEND/RESUME Operations ...................................................................................................... 64
Table 32: OTP Control Byte (Byte 64) .............................................................................................................. 67
Table 33: ENTER or EXIT 4-BYTE ADDRESS MODE Operations ....................................................................... 68
Table 34: ENTER and RESET QUAD PROTOCOL Operations ............................................................................ 68
Table 35: CRC Command Sequence on Entire Device ...................................................................................... 69
Table 36: CRC Command Sequence on a Range .............................................................................................. 70
Table 37: Operations Allowed/Disallowed During Device States ...................................................................... 71
Table 38: XIP Confirmation Bit ....................................................................................................................... 73
Table 39: Effects of Running XIP in Different Protocols .................................................................................... 73
Table 40: Power-Up Timing and V WI Threshold ............................................................................................... 75
Table 41: Absolute Ratings ............................................................................................................................. 78
Table 42: Operating Conditions ...................................................................................................................... 78
Table 43: Input/Output Capacitance .............................................................................................................. 78
Table 44: AC Timing Input/Output Conditions ............................................................................................... 79
Table 45: DC Current Characteristics and Operating Conditions ...................................................................... 80
Table 46: DC Voltage Characteristics and Operating Conditions ...................................................................... 80
Table 47: AC Characteristics and Operating Conditions ................................................................................... 82
Table 48: AC RESET Conditions ...................................................................................................................... 84
Table 49: Program/Erase Specifications .......................................................................................................... 87

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Device Description

Device Description
The MT25Q is a high-performance multiple input/output serial Flash memory device. It
features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionali-
ty, advanced write protection mechanisms, and extended address access. Innovative,
high-performance, dual and quad input/output commands enable double or quadru-
ple the transfer bandwidth for READ and PROGRAM operations.

Figure 2: Block Diagram

RESET#
HOLD# High voltage
Control logic
W# generator
64 OTP bytes
S#
C
DQ0
DQ1
DQ2 I/O shift register
DQ3

Address register 256 byte Status

and counter data buffer register
Y decoder

Memory

256 bytes (page size)

X decoder

Note: 1. Each page of memory can be individually programmed, but the device is not page-eras-
able.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Device Description

Device Logic Diagram

Figure 3: Logic Diagram

VCC

C
DQ[3:0]
S#
W#
RESET#
HOLD#

VSS

Notes: 1. Depending on the selected device (see Part Numbering Ordering Information), DQ3 =
DQ3/RESET# or DQ3/HOLD#.
2. A separate RESET pin is available on dedicated part numbers (see Part Numbering Order-
ing Information).

Advanced Security Protection

The device offers an advanced security protection scheme where each sector can be in-
dependently locked, by either volatile or nonvolatile locking features. The nonvolatile
locking configuration can also be locked, as well password-protected. See Block Protec-
tion Settings and Sector and Password Protection for more details.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Signal Assignments – Package Code: 12

Signal Assignments – Package Code: 12

Figure 4: 24-Ball T-BGA, 5 x 5 (Balls Down)

1 2 3 4 5

A DNU DNU DNU

RESET#/DNU

B DNU C VSS VCC DNU

C DNU S# DNU DNU

W#/DQ2

D DNU DQ1 DQ0 DQ3 DNU

E DNU DNU DNU DNU DNU

Notes: 1. RESET# or HOLD# signals can share Ball D4 with DQ3, depending on the selected device
(see Part Numbering Ordering Information). When using single and dual I/O commands
on these parts, DQ3 must be driven high by the host, or an external pull-up resistor must
be placed on the PCB, in order to avoid allowing the HOLD# or RESET# input to float.
2. Ball A4 = RESET# or DNU, depending on the part number. This signal has an internal
pull-up resistor and may be left unconnected if not used.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Signal Assignments – Package Code: 56

Signal Assignments – Package Code: 56

Figure 5: 27-Ball XFWLBGA (Top View)

1 2 3 4 5 6 7 8 9 10

Top view

Note: 1. For detail information about this package option, contact the factory to request the da-
ta sheet addendum.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Signal Assignments – Package Code: SF

Signal Assignments – Package Code: SF

Figure 6: 16-Pin, Plastic Small Outline – SO16 (Top View)

DQ3 1 16 C
VCC 2 15 DQ0
RESET#/DNU 3 14 DNU
DNU 4 13 DNU
DNU 5 12 DNU
DNU 6 11 DNU
S# 7 10 VSS
DQ1 8 9 W#/ DQ2

Notes: 1. RESET# or HOLD# signals can share Pin 1 with DQ3, depending on the selected device
(see Part Numbering Ordering Information). When using single and dual I/O commands
on these parts, DQ3 must be driven high by the host, or an external pull-up resistor must
be placed on the PCB, in order to avoid allowing the HOLD# or RESET# input to float.
2. Pin 3 = RESET# or DNU, depending on the part number. This signal has an internal pull-
up resistor and may be left unconnected if not used.

Signal Assignments – Package Code: W9

Figure 7: 8-Pin, W-PDFN (Top View)

S# 1 8 VCC
DQ1 2 7 HOLD#/DQ3
W#/DQ2 3 6 C
VSS 4 5 DQ0

Notes: 1. RESET# or HOLD# signals can share Pin 7 with DQ3, depending on the selected device
(see Part Numbering Ordering Information). When using single and dual I/O commands
on these parts, DQ3 must be driven high by the host, or an external pull-up resistor must
be placed on the PCB, in order to avoid allowing the HOLD# or RESET# input to float.
2. On the underside of the W-PDFN package, there is an exposed central pad that is pulled
internally to VSS. It can be left floating or can be connected to VSS. It must not be con-
nected to any other voltage or signal line on the PCB.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Signal Descriptions

Signal Descriptions
The signal description table below is a comprehensive list of signals for the MT25Q fam-
ily devices. All signals listed may not be supported on this device. See Signal Assign-
ments for information specific to this device.

Table 1: Signal Descriptions

Symbol Type Description

S# Input Chip select: When S# is driven HIGH, the device will enter standby mode, unless an internal
PROGRAM, ERASE, or WRITE STATUS REGISTER cycle is in progress. All other input pins are ig-
nored and the output pins are tri-stated. On parts with the pin configuration offering a dedica-
ted RESET# pin, however, the RESET# input pin remains active even when S# is HIGH.

Driving S# LOW enables the device, placing it in the active mode.

After power-up, a falling edge on S# is required prior to the start of any command.
C Input Clock: Provides the timing of the serial interface. Command inputs are latched on the rising
edge of the clock. In STR commands or protocol, address and data inputs are latched on the
rising edge of the clock, while data is output on the falling edge of the clock. In DTR com-
mands or protocol, address and data inputs are latched on both edges of the clock, and data is
output on both edges of the clock.
RESET# Input RESET#: When RESET# is driven LOW, the device is reset and the outputs are tri-stated. If RE-
SET# is driven LOW while an internal WRITE, PROGRAM, or ERASE operation is in progress, da-
ta may be lost. The RESET# functionality can be disabled using bit 4 of the nonvolatile configu-
ration register or bit 4 of the enhanced volatile configuration register.

For pin configurations that share the DQ3 pin with RESET#, the RESET# functionality is disabled
in QIO-SPI mode.
HOLD# Input HOLD: Pauses serial communications with the device without deselecting or resetting the de-
vice. Outputs are tri-stated and inputs are ignored. The HOLD# functionality can be disabled
using bit 4 of the nonvolatile configuration register or bit 4 of the enhanced volatile configura-
tion register.

For pin configurations that share the DQ3 pin with HOLD#, the HOLD# functionality is disabled
in QIO-SPI mode or when DTR operation is enabled.
W# Input Write protect: When LOW, the blocks defined by the block protection bits BP[3:0] are protec-
ted against PROGRAM or ERASE operations. Status register bit 7 should be set to 1 to enable
write protection.
DQ[3:0] I/O Serial I/O: The bidirectional DQ signals transfer address, data, and command information.

When using legacy (x1) SPI commands in extended I/O protocol (XIO-SPI), DQ0 is an input and
DQ1 is an output. DQ[3:2] are not used.

When using dual commands in XIO-SPI or when using DIO-SPI, DQ[1:0] are I/O. DQ[3:2] are not
used.

When using quad commands in XIO-SPI or when using QIO-SPI, DQ[3:0] are I/O.
VCC Supply Core and I/O power supply.
VSS Supply Core and I/O ground connection.
DNU – Do not use. Must be left floating.
NC – No connect. Not internally connected.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Package Dimensions – Package Code: 12

Package Dimensions – Package Code: 12

Figure 8: 24-Ball T-PBGA (5 x 5 ball grid array) – 6mm x 8mm

Seating plane

0.1 A
A

24X Ø0.4
Dimensions
apply to solder
balls post-reflow
on Ø0.40 SMD Ball A1 ID Ball A1 ID
ball pads. 5 4 3 2 1

B
4 CTR
C
8 ±0.1
D
1 TYP
E

1 TYP 1.1 ±0.1

4 CTR 0.3 ±0.05

6 ±0.1

Notes: 1. All dimensions are in millimeters.

2. See Part Number Ordering Information for complete package names and details.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Package Dimensions – Package Code: 56

Package Dimensions – Package Code: 56

Figure 9: 27-Ball XFWLBGA

Seating plane

A 0.05 A

Ball A1 ID
10 8 7 6 5 4 3 1

A
B
C
D
E
F
G
H

Note: 1. For detail information about this package option, contact the factory to request the da-
ta sheet addendum.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Package Dimensions – Package Code: SF

Package Dimensions – Package Code: SF

Figure 10: 16-Pin SOP2 – 300 mils Body Width

10.30 ±0.20 h x 45°
16 9

10.00 MIN/ 0.23 MIN/

10.65 MAX 0.32 MAX

7.50 ±0.10

1 8 0° MIN/8° MAX

2.5 ±0.15 0.20 ±0.1

0.1 Z
0.33 MIN/ 0.40 MIN/
0.51 MAX 1.27 TYP Z 1.27 MAX

Notes: 1. All dimensions are in millimeters.

2. See Part Number Ordering Information for complete package names and details.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Package Dimensions – Package Code: W9

Package Dimensions – Package Code: W9

Figure 11: W-PDFN-8 (MLP8) – 8mm x 6mm

Seating plane

A 0.08 A

8 ±0.1
3.4 ±0.1
8X 0.5 ±0.05 Pin A1 ID Pin A1 ID
CTR

8 1
1.27
TYP 8X 0.4 ±0.05
7 2
6 ±0.1 CTR
3.81 4.3 ±0.1
CTR 6 3 CTR

5 4

0.75 ±0.05
Exposed die
attach pad. 0 MIN

Notes: 1. All dimensions are in millimeters.

2. See Part Number Ordering Information for complete package names and details.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Memory Map – 512Mb Density

Memory Map – 512Mb Density

Table 2: Memory Map

Address Range
Sector Subsector (32KB) Subsector (4KB) Start End
1023 2047 16383 03FF F000h 03FF FFFFh
⋮ ⋮ ⋮
16376 03FF 8000h 03FF 8FFFh
2046 16375 03FF 7000h 03FF 7FFFh
⋮ ⋮ ⋮
16368 03FF 0000h 03FF 0FFFh
⋮ ⋮ ⋮ ⋮ ⋮
511 1023 8191 01FF F000h 01FF FFFFh
⋮ ⋮ ⋮
8184 01FF 8000h 01FF 8FFFh
1022 8183 01FF 7000h 01FF 7FFFh
⋮ ⋮ ⋮
8176 01FF 0000h 01FF 0FFFh
⋮ ⋮ ⋮ ⋮ ⋮
255 511 4095 00FF F000h 00FF FFFFh
⋮ ⋮ ⋮
4088 00FF 8000h 00FF 8FFFh
510 4087 00FF 7000h 00FF 7FFFh
⋮ ⋮ ⋮
4080 00FF 0000h 00FF 0FFFh
⋮ ⋮ ⋮ ⋮ ⋮
0 1 15 0000 F000h 0000 FFFFh
⋮ ⋮ ⋮
8 0000 8000h 0000 8FFFh
0 7 0000 7000h 0000 7FFFh
⋮ ⋮ ⋮
0 0000 0000h 0000 0FFFh

Note: 1. See Part Number Ordering Information, Sector Size – Part Numbers table for options.

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© 2013 Micron Technology, Inc. All rights reserved.
 512Mb, 1.8V Multiple I/O Serial Flash Memory
Status Register

Status Register
Status register bits can be read from or written to using READ STATUS REGISTER or
WRITE STATUS REGISTER commands, respectively. When the status register enable/
disable bit (bit 7) is set to 1 and W# is driven LOW, the status register nonvolatile bits
become read-only and the WRITE STATUS REGISTER operation will not execute. The
only way to exit this hardware-protected mode is to drive W# HIGH.

Table 3: Status Register

Bit Name Settings Description Notes

7 Status register 0 = Enabled Nonvolatile control bit: Used with W# to enable or –
write enable/disa- 1 = Disabled (default) disable writing to the status register.
ble
5 Top/bottom 0 = Top Nonvolatile control bit: Determines whether the pro- –
1 = Bottom (default) tected memory area defined by the block protect bits
starts from the top or bottom of the memory array.
6, 4:2 BP[3:0] See Protected Area ta- Nonvolatile control bit: Defines memory to be soft- 1
bles ware protected against PROGRAM or ERASE operations.
When one or more block protect bits is set to 1, a desig-
nated memory area is protected from PROGRAM and
ERASE operations.
1 Write enable latch 0 = Clear (default) Volatile control bit: The device always powers up with –
1 = Set this bit cleared to prevent inadvertent WRITE, PRO-
GRAM, or ERASE operations. To enable these operations,
the WRITE ENABLE operation must be executed first to
set this bit.
0 Write in progress 0 = Ready Status bit: Indicates if one of the following command 2
1 = Busy cycles is in progress:
WRITE STATUS REGISTER
WRITE NONVOLATILE CONFIGURATION REGISTER
PROGRAM
ERASE

Notes: 1. The BULK ERASE command is executed only if all bits = 0.

2. Status register bit 0 is the inverse of flag status register bit 7.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Status Register

Block Protection Settings

Table 4: Protected Area

Status Register Content Protected Area

Top/Bottom BP3 BP2 BP1 BP0 64KB Sectors
0 0 0 0 0 None
0 0 0 0 1 1023:1023
0 0 0 1 0 1023:1022
0 0 0 1 1 1023:1020
0 0 1 0 0 1023:1016
0 0 1 0 1 1023:1008
0 0 1 1 0 1023:992
0 0 1 1 1 1023:960
0 1 0 0 0 1023:896
0 1 0 0 1 1023:768
0 1 0 1 0 1023:512
0 1 0 1 1 1023:0
0 1 1 0 0 1023:0
0 1 1 0 1 1023:0
0 1 1 1 0 1023:0
0 1 1 1 1 1023:0
1 0 0 0 0 None
1 0 0 0 1 0:0
1 0 0 1 0 1:0
1 0 0 1 1 3:0
1 0 1 0 0 7:0
1 0 1 0 1 15:0
1 0 1 1 0 31:0
1 0 1 1 1 63:0
1 1 0 0 0 127:0
1 1 0 0 1 255:0
1 1 0 1 0 511:0
1 1 0 1 1 1023:0
1 1 1 0 0 1023:0
1 1 1 0 1 1023:0
1 1 1 1 0 1023:0
1 1 1 1 1 1023:0

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Flag Status Register

Flag Status Register

Flag status register bits are read by using READ FLAG STATUS REGISTER command. All
bits are volatile and are reset to zero on power up.
Status bits are set and reset automatically by the internal controller. Error bits must be
cleared through the CLEAR STATUS REGISTER command.

Table 5: Flag Status Register

Bit Name Settings Description

7 Program or 0 = Busy Status bit: Indicates whether one of the following
erase 1 = Ready command cycles is in progress: WRITE STATUS
controller REGISTER, WRITE NONVOLATILE CONFIGURATION
REGISTER, PROGRAM, or ERASE.
6 Erase suspend 0 = Clear Status bit: Indicates whether an ERASE operation has been
1 = Suspend or is going to be suspended.
5 Erase 0 = Clear Error bit: Indicates whether an ERASE operation has suc-
1 = Failure or protection error ceeded or failed.
4 Program 0 = Clear Error bit: Indicates whether a PROGRAM operation has suc-
1 = Failure or protection error ceeded or failed. It indicates, also, whether a CRC check has
succeeded or failed.
3 Reserved 0 Reserved
2 Program sus- 0 = Clear Status bit: Indicates whether a PROGRAM operation has
pend 1 = Suspend been or is going to be suspended.
1 Protection 0 = Clear Error bit: Indicates whether an ERASE or PROGRAM opera-
1 = Failure or protection error tion has attempted to modify the protected array sector, or
whether a PROGRAM operation has attempted to access the
locked OTP space.
0 Addressing 0 = 3-byte addressing Status bit: Indicates whether 3-byte or 4-byte address
1 = 4-byte addressing mode is enabled.

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© 2013 Micron Technology, Inc. All rights reserved.
 512Mb, 1.8V Multiple I/O Serial Flash Memory
Extended Address Register

Extended Address Register

The 3-byte address mode can only access 128Mb of memory. To access the full device in
3-byte address mode, the device includes an extended address register that indirectly
provides a fourth address byte A[31:24]. The extended address register bits [1:0] operate
as memory address bit A[25:24] to select one of the four 128Mb segments of the memo-
ry array.
If 4-byte addressing is enabled, the extended address register settings are ignored.

Table 6: Extended Address Register

Bit Name Settings Description

7:2 A[31:26] 000000 Reserved
1:0 A[25:24] 11 = Highest 128Mb segment Enables specified 128Mb memory segment. The de-
10 = Third 128Mb segment fault (lowest) setting can be changed to the high-
01 = Second 128Mb segment est 128Mb segment using bit 1 of the nonvolatile
00 = Lowest 128Mb segment (default) configuration register.

Figure 12: Memory Array Segments

03FFFFFFh
A[25:24] = 11

02FFFFFFh
A[25:24] = 10
03000000h

01FFFFFFh

02000000h A[25:24] = 01
00FFFFFFh

01000000h
A[25:24] = 00

00000000h

The PROGRAM and ERASE operations act upon the 128Mb segment selected in the ex-
tended address register. The BULK ERASE operation erases the entire device.
The READ operation begins reading in the selected 128Mb segment, but is not bound
by it.
In a continuous READ, when the last byte of the segment is read, the next byte output is
the first byte of the next segment. The operation wraps to 0000000h; therefore, a down-
load of the whole array is possible with one READ operation.
The value of the extended address register does not change when a READ operation
crosses the selected 128Mb boundary.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Internal Configuration Register

Internal Configuration Register

The memory configuration is set by an internal configuration register that is not directly
accessible to users.
The user can change the default configuration at power up by using the WRITE NON-
VOLATILE CONFIGURATION REGISTER. Information from the nonvolatile configura-
tion register overwrites the internal configuration register during power on or after a re-
set.
The user can change the configuration during operation by using the WRITE VOLATILE
CONFIGURATION REGISTER or the WRITE ENHANCED VOLATILE CONFIGURATION
REGISTER commands. Information from the volatile configuration registers overwrite
the internal configuration register immediately after the WRITE command completes.

Figure 13: Internal Configuration Register

Nonvolatile configuration register Volatile configuration register and

enhanced volatile configuration register

Register download is executed only during Register download is executed after a

the power-on phase or after a reset, WRITE VOLATILE OR ENHANCED VOLATILE
overwriting configuration register settings CONFIGURATION REGISTER command,
on the internal configuration register. overwriting configuration register
Internal configuration
settings on the internal configuration register.
register

Device behavior

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Nonvolatile Configuration Register

Nonvolatile Configuration Register

This register is read from and written to using the READ NONVOLATILE CONFIGURA-
TION REGISTER and the WRITE NONVOLATILE CONFIGURATION REGISTER com-
mands, respectively. A register download is executed during power-on or after reset,
overwriting the internal configuration register settings that determine device behavior.

Table 7: Nonvolatile Configuration Register

Bit Name Settings Description Notes

15:12 Number of 0000 = Default Sets the number of dummy clock cycles subse- 1
dummy clock cy- 0001 = 1 quent to all FAST READ commands
cles 0010 = 2 (See the Command Set Table for default setting
⋮ values).
1101 = 13
1110 = 14
1111 = Default
11:9 XIP mode at 000 = XIP: Fast read Enables the device to operate in the selected XIP
power-on reset 001 = XIP: Dual output fast read mode immediately after power-on reset.
010 = XIP: Dual I/O fast read
011 = XIP: Quad output fast read
100 = XIP: Quad I/O fast read
101 = Reserved
110 = Reserved
111 = Disabled (Default)
8:6 Output driver 000 = Reserved Optimizes the impedance at VCC/2 output volt-
strength 001 = 90 Ohms age.
010 = Reserved
011 = 45 Ohms
100 = Reserved
101 = 20 Ohms
110 = Reserved
111 = 30 Ohms (Default)
5 Double transfer 0 = Enabled Set DTR protocol as current one. Once enabled,
rate protocol 1 = Disabled (Default) all commands will work in DTR.
4 Reset/hold 0 = Disabled Enables or disables HOLD# or RESET# on DQ3.
1 = Enabled (Default)
3 Quad I/O 0 = Enabled Enables or disables quad I/O command input 2
protocol 1 = Disabled (Default) (4-4-4 mode).
2 Dual I/O 0 = Enabled Enables or disables dual I/O command input 2
protocol 1 = Disabled (Default) (2-2-2 mode).
1 128Mb 0 = Highest 128Mb segment Selects the power-on default 128Mb segment for
segment select 1 = Lowest 128Mb segment (De- 3-byte address operations. See also the extended
fault) address register.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Nonvolatile Configuration Register

Table 7: Nonvolatile Configuration Register (Continued)

Bit Name Settings Description Notes

0 Number of 0 = Enable 4-byte address mode Defines the number of address bytes for a com-
address bytes 1 = Enable 3-byte address mode mand.
during command (Default)
entry

Notes: 1. The number of cycles must be set to accord with the clock frequency, which varies by the
type of FAST READ command (See Supported Clock Frequencies table). Insufficient dum-
my clock cycles for the operating frequency causes the memory to read incorrect data.
2. When bits 2 and 3 are both set to 0, the device operates in quad I/O protocol.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Volatile Configuration Register

Volatile Configuration Register

This register is read from and written to by the READ VOLATILE CONFIGURATION
REGISTER and the WRITE VOLATILE CONFIGURATION REGISTER commands, respec-
tively. A register download is executed after these commands, overwriting the internal
configuration register settings that determine device memory behavior.

Table 8: Volatile Configuration Register

Bit Name Settings Description Notes

7:4 Number of 0000 = Default Sets the number of dummy clock cycles subsequent to all 1
dummy clock 0001 = 1 FAST READ commands
cycles 0010 = 2 (See the Command Set Table for default setting values).
⋮
1101 = 13
1110 = 14
1111 = Default
3 XIP 0 = Enable Enables or disables XIP.
1 = Disable (default)
2 Reserved 0 0b = Fixed value.
1:0 Wrap 00 = 16-byte boundary 16-byte wrap: Output data wraps within an aligned 16-byte 2
aligned boundary starting from the 3-byte address issued after the
command code.
01 = 32-byte boundary 32-byte wrap: Output data wraps within an aligned 32-byte
aligned boundary starting from the 3-byte address issued after the
command code.
10 = 64-byte boundary 64-byte wrap: Output data wraps within an aligned 64-byte
aligned boundary starting from the 3-byte address issued after the
command code.
11 = Continuous (default) Continuously sequences addresses through the entire array.

Notes: 1. The number of cycles must be set according to and sufficient for the clock frequency,
which varies by the type of FAST READ command, as shown in the Supported Clock Fre-
quencies table. An insufficient number of dummy clock cycles for the operating frequen-
cy causes the memory to read incorrect data.
2. See the Sequence of Bytes During Wrap table.

Table 9: Sequence of Bytes During Wrap

Starting Address 16-Byte Wrap 32-Byte Wrap 64-Byte Wrap

0 0-1-2- . . . -15-0-1- . . 0-1-2- . . . -31-0-1- . . 0-1-2- . . . -63-0-1- . .
1 1-2- . . . -15-0-1-2- . . 1-2- . . . -31-0-1-2- . . 1-2- . . . -63-0-1-2- . .
.... .... .... ....
15 15-0-1-2-3- . . . -15-0-1- . . 15-16-17- . . . -31-0-1- . . 15-16-17- . . . -63-0-1- . .
.... .... .... ....
31 - 31-0-1-2-3- . . . -31-0-1- . . 31-32-33- . . . -63-0-1- . .
.... .... .... ....
63 - - 63-0-1- . . . -63-0-1- . .

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Volatile Configuration Register

Supported Clock Frequencies

Table 10: Clock Frequencies – STR (in MHz)

Notes apply to entire table
Number of
Dummy DUAL OUTPUT DUAL I/O FAST QUAD OUTPUT QUAD I/O FAST
Clock Cycles FAST READ FAST READ READ FAST READ READ
1 94 79 60 44 39
2 112 97 77 61 48
3 129 106 86 78 58
4 146 115 97 97 69
5 162 125 106 106 78
6 166 134 115 115 86
7 166 143 125 125 97
8 166 152 134 134 106
9 166 162 143 143 115
10 166 166 152 152 125
11 166 166 162 162 134
12 166 166 166 166 143
13 166 166 166 166 156
14 166 166 166 166 166

Notes: 1. Values are guaranteed by characterization and not 100% tested in production.
2. A tuning data pattern (TDP) capability provides applications with data patterns for ad-
justing the data latching point at the host end when the clock frequency is set higher
than 133 MHz in STR mode and higher than 66 MHz in double transfer rate (DTR) mode.
For additional details, refer to TN-25-07: Tuning Data Pattern for MT25Q and MT25T De-
vices.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Volatile Configuration Register

Table 11: Clock Frequencies – DTR (in MHz)

Notes apply to entire table
Number of
Dummy DUAL OUTPUT DUAL I/O FAST QUAD OUTPUT QUAD I/O FAST
Clock Cycles FAST READ FAST READ READ FAST READ READ
1 59 45 40 26 20
2 73 59 49 40 30
3 82 68 59 59 39
4 90 76 65 65 49
5 90 83 75 75 58
6 90 90 83 83 68
7 90 90 90 90 78
8 90 90 90 90 85
9 90 90 90 90 90
10 : 14 90 90 90 90 90

Notes: 1. Values are guaranteed by characterization and not 100% tested in production.
2. A tuning data pattern (TDP) capability provides applications with data patterns for ad-
justing the data latching point at the host end when the clock frequency is set higher
than 133 MHz in STR mode and higher than 66 MHz in double transfer rate (DTR) mode.
For additional details, refer to TN-25-07: Tuning Data Pattern for MT25Q and MT25T De-
vices.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Enhanced Volatile Configuration Register

Enhanced Volatile Configuration Register

This register is read from and written to using the READ ENHANCED VOLATILE CON-
FIGURATION REGISTER and the WRITE ENHANCED VOLATILE CONFIGURATION
REGISTER commands, respectively. A register download is executed after these com-
mands, overwriting the internal configuration register settings that determine device
memory behavior.

Table 12: Enhanced Volatile Configuration Register

Bit Name Settings Description Notes

7 Quad I/O protocol 0 = Enabled Enables or disables quad I/O command input 1
1 = Disabled (Default) (4-4-4 mode).
6 Dual I/O protocol 0 = Enabled Enables or disables dual I/O command input 1
1 = Disabled (Default) (2-2-2 mode).
5 Double transfer rate 0 = Enabled Set DTR protocol as current one. Once enabled,
protocol 1 = Disabled (Default, all commands will work in DTR
single transfer rate)
4 Reset/hold 0 = Disabled Enables or disables HOLD# or RESET# on DQ3.
1 = Enabled (Default) (Available only on specified part numbers.)
3 Reserved 1
2:0 Output driver strength 000 = Reserved Optimizes the impedance at VCC/2 output volt-
001 = 90 Ohms age.
010 = Reserved
011 = 45 Ohms
100 = Reserved
101 = 20 Ohms
110 = Reserved
111 = 30 Ohms (De-
fault)

Note: 1. When bits 6 and 7 are both set to 0, the device operates in quad I/O protocol. When ei-
ther bit 6 or 7 is set to 0, the device operates in dual I/O or quad I/O respectively. When a
bit is set, the device enters the selected protocol immediately after the WRITE EN-
HANCED VOLATILE CONFIGURATION REGISTER command. The device returns to the de-
fault protocol after the next power-on or reset. Also, the rescue sequence or another
WRITE ENHANCED VOLATILE CONFIGURATION REGISTER command will return the de-
vice to the default protocol.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Security Registers

Security Registers
Security registers enable sector and password protection on multiple levels using non-
volatile and volatile register and bit settings (shown below). The applicable register ta-
bles follow.

Figure 14: Sector and Password Protection

(See Note 1)
Sector Protection Register Memory Sectors
15 14 13 2 1 0 1 Last sector 0
n n locked
.
.
.

0 0
locked
1 1

. . .
. . .
. . .
locked
1 3rd sector 1

1 2nd sector 0
(See Note 2) locked
Global Freeze Bit 0 1st sector 0
(See Note 3) (See Note 4)
n Nonvolatile Volatile
Lock Bits Lock Bits

Notes: 1. Sector protection register. This 16-bit nonvolatile register includes two active bits[2:1]
to enable sector and password protection.
2. Global freeze bit. This volatile bit protects the settings in all nonvolatile lock bits.
3. Nonvolatile lock bits. Each nonvolatile bit corresponds to and provides nonvolatile
protection for an individual memory sector, which remains locked (protection enabled)
until its corresponding bit is cleared to 1.
4. Volatile lock bits. Each volatile bit corresponds to and provides volatile protection for
an individual memory sector, which is locked temporarily (protection is cleared when the
device is reset or powered down).
5. The first and last sectors will have volatile protections at the 4KB subsector level. Each
4KB subsector in these sectors can be individually locked by volatile lock bits setting;
nonvolatile protections granularity remain at the sector level.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Sector Protection Security Register

Sector Protection Security Register

Table 13: Sector Protection Register

Bits Name Settings Description Notes

15:3 Reserved 1 = Default –
2 Password 1 = Disabled (default) Nonvolatile bit: When set to 1, password protection is dis- 1, 2
protection 0 = Enabled abled. When set to 0, password protection is enabled per-
lock manently; the 64-bit password cannot be retrieved or reset.
1 Sector 1 = Enabled, with password Nonvolatile bit: When set to 1, nonvolatile lock bits can 1, 3, 4
protection protection (default) be set to lock/unlock their corresponding memory sectors;
lock 0 = Enabled, without pass- bit 2 can be set to 0, enabling password protection perma-
word protection nently.
When set to 0, nonvolatile lock bits can be set to lock/
unlock their corresponding memory sectors; bit 2 must re-
main set to 1, disabling password protection permanently.
0 Reserved 1 = Default –

Notes: 1. Bits 2 and 1 are user-configurable, one-time-programmable, and mutually exclusive in

that only one of them can be set to 0. It is recommended that one of the bits be set to 0
when first programming the device.
2. The 64-bit password must be programmed and verified before this bit is set to 0 because
after it is set, password changes are not allowed, thus providing protection from mali-
cious software. When this bit is set to 0, a 64-bit password is required to reset the global
freeze bit from 0 to 1. In addition, if the password is incorrect or lost, the global freeze
bit can no longer be set and nonvolatile lock bits cannot be changed. (See the Sector
and Password Protection figure and the Global Freeze Bit Definition table).
3. Whether this bit is set to 1 or 0, it enables programming or erasing nonvolatile lock bits
(which provide memory sector protection). The password protection bit must be set be-
forehand because setting this bit will either enable password protection permanently
(bit 2 = 0) or disable password protection permanently (bit 1 = 0).
4. By default, all sectors are unlocked when the device is shipped from the factory. Sectors
are locked, unlocked, read, or locked down as explained in the Nonvolatile and Volatile
Lock Bits table and the Volatile Lock Bit Register Bit Definitions table.

Table 14: Global Freeze Bit

Bits Name Settings Description

0 Global 1 = Disabled (De- Volatile bit: When set to 1, all nonvolatile lock bits can be set to enable or
freeze bit fault) disable locking their corresponding memory sectors.
0 = Enabled When set to 0, nonvolatile lock bits are protected from PROGRAM or ERASE
commands. This bit should not be set to 0 until the nonvolatile lock bits are
set.

Note: 1. The READ GLOBAL FREEZE BIT command enables reading this bit. When password pro-
tection is enabled, this bit is locked upon device power-up or reset. It cannot be
changed without the password. After the password is entered, the UNLOCK PASSWORD
command resets this bit to 1, enabling programing or erasing the nonvolatile lock bits.
After the bits are changed, the WRITE GLOBAL FREEZE BIT command sets this bit to 0,
protecting the nonvolatile lock bits from PROGRAM or ERASE operations.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Nonvolatile and Volatile Sector Lock Bits Security

Nonvolatile and Volatile Sector Lock Bits Security

Table 15: Nonvolatile and Volatile Lock Bits

Bit
Details Nonvolatile Lock Bit Volatile Lock Bit
Description Each sector of memory has one corresponding non- Each sector of memory has one corresponding vola-
volatile lock bit tile lock bit; this bit is the sector write lock bit descri-
bed in the Volatile Lock Bit Register table.
Function When set to 0, locks and protects its corresponding When set to 1, locks and protects its corresponding
memory sector from PROGRAM or ERASE operations memory sector from PROGRAM or ERASE operations.
during device reset or power-down. Because this bit Because this bit is volatile, protection is temporary.
is nonvolatile, the sector remains locked, protection The sector is unlocked, protection disabled, upon de-
enabled, until the bit is cleared to 1. vice reset or power-down.
Settings 1 = Lock disabled 0 = Lock disabled
0 = Lock enabled 1 = Lock enabled
Enabling The bit is set to 0 by the WRITE NONVOLATILE LOCK The bit is set to 1 by the WRITE VOLATILE LOCK BITS
protection BITS command, enabling protection for designated command, enabling protection for designated locked
locked sectors. Programming a sector lock bit re- sectors.
quires the typical byte programming time.
Disabling All bits are cleared to 1 by the ERASE NONVOLATILE All bits are set to 0 upon reset or power-down, un-
protection LOCK BITS command, unlocking and disabling pro- locking and disabling protection for all sectors.
tection for all sectors simultaneously. Erasing all sec-
tor lock bits requires typical sector erase time.
Reading Bits are read by the READ NONVOLATILE LOCK BITS Bits are read by the READ VOLATILE LOCK BITS com-
the bit command. mand.

Volatile Lock Bit Security Register

One volatile lock bit register is associated with each sector of memory. It enables the
sector to be locked, unlocked, or locked-down with the WRITE VOLATILE LOCK BITS
command, which executes only when sector lock down (bit 1) is set to 0. Each register
can be read with the READ VOLATILE LOCK BITS command. This register is compatible
with and provides the same locking capability as the lock register in the Micron N25Q
SPI NOR family.

Table 16: Volatile Lock Bit Register

Bit Name Settings Description

7:2 Reserved 0 Bit values are 0.
1 Sector 0 = Lock-down disabled (Default) Volatile bit: Device always powers-up with this bit set to 0, so that
lock down 1 = Lock-down enabled sector lock down and sector write lock bits can be set to 1. When
this bit set to 1, neither of the two volatile lock bits can be written
to until the next power cycle.
0 Sector 0 = Write lock disabled (Default) Volatile bit: Device always powers-up with this bit set to 0, so that
write lock 1 = Write lock enabled PROGRAM and ERASE operations in this sector can be executed
and sector content modified. When this bit is set to 1, PROGRAM
and ERASE operations in this sector are not executed.

09005aef864f8d6d
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© 2013 Micron Technology, Inc. All rights reserved.
 512Mb, 1.8V Multiple I/O Serial Flash Memory
Device ID Data

Device ID Data
The device ID data shown in the tables here is read by the READ ID and MULTIPLE I/O
READ ID operations.

Table 17: Device ID Data

Byte# Name Content Value Assigned By

Manufacturer ID (1 Byte total)
1 Manufacturer ID (1 Byte) 20h JEDEC
Device ID (2 Bytes total)
2 Memory Type (1 Byte) BAh = 3V Manufacturer
BBh = 1.8V
3 Memory Capacity (1 Byte) 22h = 2Gb
21h = 1Gb
20h = 512Mb
19h = 256Mb
18h = 128Mb
17h = 64Mb
Unique ID (17 Bytes total)
4 Indicates the number of remaining ID bytes 10h Factory
(1 Byte)
5 Extended device ID (1 Byte) See Extended Device ID table
6 Device configuration information (1 Byte) 00h = Standard
7:20 Customized factory data (14 Bytes) Unique ID code (UID)

Table 18: Extended Device ID Data, First Byte

Bit 7 Bit 6 Bit 51 Bit 4 Bit 3 Bit 22 Bit 1 Bit 0

Reserved Device 1 = Alternate BP Reserved HOLD#/RESET#: Additional HW Sector size:
Generation scheme 0 = HOLD RESET#: 00 = Uniform
1 = 2nd 0 = Standard BP 1 = RESET 1 = Available 64KB
generation scheme 0 = Not available

Notes: 1. For alternate BP scheme information, contact the factory.

2. Available for specific part numbers. See Part Number Ordering Information for details.

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© 2013 Micron Technology, Inc. All rights reserved.
 512Mb, 1.8V Multiple I/O Serial Flash Memory
Serial Flash Discovery Parameter Data

Serial Flash Discovery Parameter Data

The serial Flash discovery parameter (SFDP) provides a standard, consistent method to
describe serial Flash device functions and features using internal parameter tables. The
parameter tables can be interrogated by host system software, enabling adjustments to
accommodate divergent features from multiple vendors. The SFDP standard defines a
common parameter table that describes important device characteristics and serial ac-
cess methods used to read the parameter table data.
Micron's SFDP table information aligns with JEDEC-standard JESD216 for serial Flash
discoverable parameters. The latest JEDEC standard includes revision 1.6. Beginning
week 42 (2014), Micron's MT25Q production parts will include SFDP data that aligns
with revision 1.6.
Refer to JEDEC-standard JESD216B for a complete overview of the SFDP table defini-
tion.
Data in the SFDP tables is read by the READ SERIAL FLASH DISCOVERY PARAMETER
operation.
See Micron TN-25-06: Serial Flash Discovery Parameters for MT25Q Family for serial
Flash discovery parameter data.

09005aef864f8d6d
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© 2013 Micron Technology, Inc. All rights reserved.
 Command Definitions
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09005aef864f8d6d

Table 19: Command Set

Notes 1 and 2 apply to the entire table
Command-Address-Data Dummy Clock Cycles
Extended Dual Quad Address Extended Dual Quad Data
Command Code SPI SPI SPI Bytes SPI SPI SPI Bytes Notes
Software RESET Operations
RESET ENABLE 66h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –
RESET MEMORY 99h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –
READ ID Operations
READ ID 9E/9Fh 1-0-1 0 0 1 to 20 –
MULTIPLE I/O READ ID AFh 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to 20 –
READ SERIAL FLASH DISCOVERY 5Ah 1-1-1 2-2-2 4-4-4 3 8 8 8 1 to ∞ 3
PARAMETER
READ MEMORY Operations
1 to ∞

512Mb, 1.8V Multiple I/O Serial Flash Memory

READ 03h 1-1-1 3(4) 0 4
FAST READ 0Bh 1-1-1 2-2-2 4-4-4 3(4) 8 8 10 1 to ∞ 4, 5
35

DUAL OUTPUT FAST READ 3Bh 1-1-2 2-2-2 3(4) 8 8 1 to ∞ 4, 5

DUAL INPUT/OUTPUT FAST READ BBh 1-2-2 2-2-2 3(4) 8 8 1 to ∞ 4, 5
QUAD OUTPUT FAST READ 6Bh 1-1-4 4-4-4 3(4) 8 10 1 to ∞ 4, 5
Micron Technology, Inc. reserves the right to change products or specifications without notice.

QUAD INPUT/OUTPUT FAST READ EBh 1-4-4 4-4-4 3(4) 10 10 1 to ∞ 4, 5

DTR FAST READ 0Dh 1-1-1 2-2-2 4-4-4 3(4) 6 6 8 1 to ∞ 4, 5
DTR DUAL OUTPUT FAST READ 3Dh 1-1-2 2-2-2 3(4) 6 6 1 to ∞ 4, 5
DTR DUAL INPUT/OUTPUT FAST BDh 1-2-2 2-2-2 3(4) 6 6 1 to ∞ 4, 5
READ
DTR QUAD OUTPUT FAST READ 6Dh 1-1-4 4-4-4 3(4) 6 8 1 to ∞ 4, 5

Command Definitions
DTR QUAD INPUT/OUTPUT FAST EDh 1-4-4 4-4-4 3(4) 8 8 1 to ∞ 4, 5
© 2013 Micron Technology, Inc. All rights reserved.

READ
QUAD INPUT/OUTPUT WORD E7h 1-4-4 4-4-4 3(4) 4 4 1 to ∞ 4
READ
READ MEMORY Operations with 4-Byte Address
4-BYTE READ 13h 1-1-1 4 0 1 to ∞ 5
4-BYTE FAST READ 0Ch 1-1-1 2-2-2 4-4-4 4 8 8 10 1 to ∞ 5
4-BYTE DUAL OUTPUT FAST READ 3Ch 1-1-2 2-2-2 4 8 8 1 to ∞ 5
mt25q-qlkt-u512-abb-0.pdf - Rev. D 6/16 EN
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Table 19: Command Set (Continued)

Notes 1 and 2 apply to the entire table
Command-Address-Data Dummy Clock Cycles
Extended Dual Quad Address Extended Dual Quad Data
Command Code SPI SPI SPI Bytes SPI SPI SPI Bytes Notes
4-BYTE DUAL INPUT/OUTPUT BCh 1-2-2 2-2-2 4 8 8 1 to ∞ 5
FAST READ
4-BYTE QUAD OUTPUT FAST 6Ch 1-1-4 4-4-4 4 8 10 1 to ∞ 5
READ
4-BYTE QUAD INPUT/OUTPUT ECh 1-4-4 4-4-4 4 10 10 1 to ∞ 5
FAST READ
4-BYTE DTR FAST READ 0Eh 1-1-1 2-2-2 4-4-4 4 6 6 8 1 to ∞ 5
4-BYTE DTR DUAL INPUT/OUTPUT BEh 1-2-2 2-2-2 4 6 6 1 to ∞ 5
FAST READ
4-BYTE DTR QUAD INPUT/ EEh 1-4-4 4-4-4 4 8 8 1 to ∞ 5
OUTPUT FAST READ
WRITE Operations

512Mb, 1.8V Multiple I/O Serial Flash Memory

WRITE ENABLE 06h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –
36

WRITE DISABLE 04h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

READ REGISTER Operations
READ STATUS REGISTER 05h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to ∞ –
Micron Technology, Inc. reserves the right to change products or specifications without notice.

READ FLAG STATUS REGISTER 70h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to ∞ –

READ NONVOLATILE CONFIGU- B5h 1-0-1 2-0-2 4-0-4 0 0 0 0 2 to ∞ –
RATION REGISTER
READ VOLATILE CONFIGURATION 85h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to ∞ –
REGISTER
READ ENHANCED VOLATILE CON- 65h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to ∞ –

Command Definitions
FIGURATION REGISTER
READ EXTENDED ADDRESS REG- C8h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to ∞ –
© 2013 Micron Technology, Inc. All rights reserved.

ISTER
READ GENERAL PURPOSE READ 96h 1-0-1 2-0-2 4-0-4 0 8 8 8 1 to ∞ 6, 7
REGISTER
WRITE REGISTER Operations
WRITE STATUS REGISTER 01h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 8
WRITE NONVOLATILE CONFIGU- B1h 1-0-1 2-0-2 4-0-4 0 0 0 0 2 8
RATION REGISTER
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Table 19: Command Set (Continued)

Notes 1 and 2 apply to the entire table
Command-Address-Data Dummy Clock Cycles
Extended Dual Quad Address Extended Dual Quad Data
Command Code SPI SPI SPI Bytes SPI SPI SPI Bytes Notes
WRITE VOLATILE CONFIGURA- 81h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 8
TION REGISTER
WRITE ENHANCED VOLATILE 61h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 8
CONFIGURATION REGISTER
WRITE EXTENDED ADDRESS REG- C5h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 8
ISTER
CLEAR FLAG STATUS REGISTER Operation
CLEAR FLAG STATUS REGISTER 50h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –
PROGRAM Operations
PAGE PROGRAM 02h 1-1-1 2-2-2 4-4-4 3(4) 0 0 0 1 to 256 8
DUAL INPUT FAST PROGRAM A2h 1-1-2 2-2-2 3(4) 0 0 1 to 256 4, 8

512Mb, 1.8V Multiple I/O Serial Flash Memory

EXTENDED DUAL INPUT FAST D2h 1-2-2 2-2-2 3(4) 0 0 1 to 256 4, 8
PROGRAM
37

QUAD INPUT FAST PROGRAM 32h 1-1-4 4-4-4 3(4) 0 0 1 to 256 4, 8

EXTENDED QUAD INPUT FAST 38h 1-4-4 4-4-4 3(4) 0 0 1 to 256 4, 8
PROGRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.

PROGRAM Operations with 4-Byte Address

4-BYTE PAGE PROGRAM 12h 1-1-1 2-2-2 4-4-4 4 0 0 0 1 to 256 8
4-BYTE QUAD INPUT FAST PRO- 34h 1-1-4 4-4-4 4 0 0 1 to 256 8
GRAM
4-BYTE QUAD INPUT EXTENDED 3Eh 1-4-4 4-4-4 4 0 0 1 to 256 8
FAST PROGRAM

Command Definitions
ERASE Operations
© 2013 Micron Technology, Inc. All rights reserved.

32KB SUBSECTOR ERASE 52h 1-1-0 2-2-0 4-4-0 3(4) 0 0 0 0 4, 8

4KB SUBSECTOR ERASE 20h 1-1-0 2-2-0 4-4-0 3(4) 0 0 0 0 4, 8
SECTOR ERASE D8h 1-1-0 2-2-0 4-4-0 3(4) 0 0 0 0 4, 8
BULK ERASE C7h/60h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 8
ERASE Operations with 4-Byte Address
4-BYTE SECTOR ERASE DCh 1-1-0 2-2-0 4-4-0 4 0 0 0 0 8
4-BYTE 4KB SUBSECTOR ERASE 21h 1-1-0 2-2-0 4-4-0 4 0 0 0 0 8
4-BYTE 32KB SUBSECTOR ERASE 5Ch 1-1-0 2-2-0 4-4-0 4 0 0 0 0 8
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09005aef864f8d6d

Table 19: Command Set (Continued)

Notes 1 and 2 apply to the entire table
Command-Address-Data Dummy Clock Cycles
Extended Dual Quad Address Extended Dual Quad Data
Command Code SPI SPI SPI Bytes SPI SPI SPI Bytes Notes
SUSPEND/RESUME Operations
PROGRAM/ERASE SUSPEND 75h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –
PROGRAM/ERASE RESUME 7Ah 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –
ONE-TIME PROGRAMMABLE (OTP) Operations
READ OTP ARRAY 4Bh 1-1-1 2-2-2 4-4-4 3(4) 8 8 10 1 to 64 4, 5
PROGRAM OTP ARRAY 42h 1-1-1 2-2-2 4-4-4 3(4) 0 0 0 1 to 64 4, 8
4-BYTE ADDRESS MODE Operations
ENTER 4-BYTE ADDRESS MODE B7h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –
EXIT 4-BYTE ADDRESS MODE E9h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –
QUAD PROTOCOL Operations
ENTER QUAD INPUT/OUTPUT 35h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

512Mb, 1.8V Multiple I/O Serial Flash Memory

MODE
38

RESET QUAD INPUT/OUTPUT F5h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

MODE
Deep Power-Down Operations
ENTER DEEP POWER DOWN B9h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –
Micron Technology, Inc. reserves the right to change products or specifications without notice.

RELEASE FROM DEEP POWER- ABh 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

DOWN
ADVANCED SECTOR PROTECTION Operations
READ SECTOR PROTECTION 2Dh 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to ∞ –
PROGRAM SECTOR PROTECTION 2Ch 1-0-1 2-0-2 4-0-4 0 0 0 0 2 8
1 to ∞

Command Definitions
READ VOLATILE LOCK BITS E8h 1-1-1 2-2-2 4-4-4 3(4) 0 0 0 4, 9
WRITE VOLATILE LOCK BITS E5h 1-1-1 2-2-2 4-4-4 3(4) 0 0 0 1 4, 8, 10
© 2013 Micron Technology, Inc. All rights reserved.

READ NONVOLATILE LOCK BITS E2h 1-1-1 2-2-2 4-4-4 4 0 0 0 1 to ∞ –

WRITE NONVOLATILE LOCK BITS E3h 1-1-0 2-2-0 4-4-0 4 0 0 0 0 8
ERASE NONVOLATILE LOCK BITS E4h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 8
READ GLOBAL FREEZE BIT A7h 1-0-1 0 0 0 0 1 to ∞ –
WRITE GLOBAL FREEZE BIT A6h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 8
READ PASSWORD 27h 1-0-1 0 0 0 0 1 to ∞ –
WRITE PASSWORD 28h 1-0-1 2-0-2 4-0-4 0 0 0 0 8 8
mt25q-qlkt-u512-abb-0.pdf - Rev. D 6/16 EN
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Table 19: Command Set (Continued)

Notes 1 and 2 apply to the entire table
Command-Address-Data Dummy Clock Cycles
Extended Dual Quad Address Extended Dual Quad Data
Command Code SPI SPI SPI Bytes SPI SPI SPI Bytes Notes
UNLOCK PASSWORD 29h 1-0-1 2-0-2 4-0-4 0 0 0 0 8 –
ADVANCED SECTOR PROTECTION Operations with 4-Byte Address
4-BYTE READ VOLATILE LOCK E0h 1-1-1 2-2-2 4-4-4 4 0 0 0 1 to ∞ –
BITS
4-BYTE WRITE VOLATILE LOCK E1h 1-1-1 2-2-2 4-4-4 4 0 0 0 1 8
BITS
ADVANCED FUNCTION INTERFACE Operations
INTERFACE ACTIVATION 9Bh 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –
CYCLIC REDUNDANCY CHECK 9Bh/27h 1-0-1 2-0-2 4-0-4 0 0 0 0 10 or 18 –

512Mb, 1.8V Multiple I/O Serial Flash Memory

39
Micron Technology, Inc. reserves the right to change products or specifications without notice.

Command Definitions
© 2013 Micron Technology, Inc. All rights reserved.
 512Mb, 1.8V Multiple I/O Serial Flash Memory
Command Definitions

Notes: 1. Micron extended SPI protocol is the standard SPI protocol with additional commands
that extend functionality and enable address or data transmission on multiple DQn
lines.
2. The command code is always transmitted on DQn = 1, 2, or 4 lines according to the
standard, dual, or quad protocol respectively. However, a command may be able to
transmit address and data on multiple DQn lines regardless of protocol. The protocol
columns show the number of DQn lines a command uses to transmit command, address,
and data information as shown in these examples: command-address-data = 1-1-1, or
1-2-2, or 2-4-4, and so on.
3. The READ SERIAL FLASH DISCOVERY PARAMETER operation accepts only 3-byte address
even if the device is configured to 4-byte address mode.
4. Requires 4 bytes of address if the device is configured to 4-byte address mode.
5. The number of dummy clock cycles required when shipped from Micron factories. The
user can modify the dummy clock cycle number via the nonvolatile configuration regis-
ter and the volatile configuration register.
6. The number of dummy cycles for the READ GENERAL PURPOSE READ REGISTER com-
mand is fixed (8 dummy cycles) and is not affected by dummy cycle settings in the non-
volatile configuration register and volatile configuration register.
7. The general purpose read register is 64 bytes. After the first 64 bytes, the device outputs
00h and does not wrap.
8. The WRITE ENABLE command must be issued first before this operation can be execu-
ted.
9. Formerly referred to as the READ LOCK REGISTER operation.
10. Formerly referred to as the WRITE LOCK REGISTER operation.

09005aef864f8d6d
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© 2013 Micron Technology, Inc. All rights reserved.
 512Mb, 1.8V Multiple I/O Serial Flash Memory
Software RESET Operations

Software RESET Operations

RESET ENABLE and RESET MEMORY Commands
To initiate these commands, S# is driven LOW and the command code is input on DQn.
A minimum de-selection time of tSHSL2 must come between RESET ENABLE and RE-
SET MEMORY or reset is not guaranteed. Then, S# must be driven HIGH for the device
to enter power-on reset. A time of tSHSL3 is required before the device can be re-selec-
ted by driving S# LOW.

Table 20: RESET ENABLE and RESET MEMORY Operations

Operation Name Description/Conditions

RESET ENABLE (66h) To reset the device, the RESET ENABLE command must be followed by the RESET MEMORY
RESET MEMORY (99h) command. When the two commands are executed, the device enters a power-on reset con-
dition. It is recommended to exit XIP mode before executing these two commands.
All volatile lock bits, the volatile configuration register, the enhanced volatile configura-
tion register, and the extended address register are reset to the power-on reset default
condition according to nonvolatile configuration register settings.
If a reset is initiated while a WRITE, PROGRAM, or ERASE operation is in progress or sus-
pended, the operation is aborted and data may be corrupted.
Reset is effective after the flag status register bit 7 outputs 1 with at least one byte output.
A RESET ENABLE command is not accepted during WRITE STATUS REGISTER and WRITE
NONVOLATILE CONFIGURATION REGISTER operations.

Figure 15: RESET ENABLE and RESET MEMORY Command

0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
C

Reset enable Reset memory

S#

DQ0

Note: 1. Above timing diagram is showed for Extended-SPI Protocol case, however these com-
mands are available in all protocols. In DIO-SPI protocol, the instruction bits are trans-
mitted on both DQ0 and DQ1 pins. In QIO-SPI protocol the instruction bits are transmit-
ted on all four data pins. In Extended-DTR-SPI protocol, the instruction bits are transmit-
ted on DQ0 pin in double transfer rate mode. In DIO-DTR-SPI protocol, the instruction
bits are transmitted on both DQ0 and DQ1 pins in double transfer rate mode. In QIO-
DTR-SPI protocol, the instruction bits are transmitted on all four data pins in double
transfer rate mode.

09005aef864f8d6d
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© 2013 Micron Technology, Inc. All rights reserved.
 512Mb, 1.8V Multiple I/O Serial Flash Memory
READ ID Operations

READ ID Operations
READ ID and MULTIPLE I/O READ ID Commands
To initiate these commands, S# is driven LOW and the command code is input on DQn.
When S# is driven HIGH, the device goes to standby. The operation is terminated by
driving S# HIGH at any time during data output.

Table 21: READ ID and MULTIPLE I/O READ ID Operations

Operation Name Description/Conditions

READ ID (9Eh/9F) Outputs information shown in the Device ID Data tables. If an ERASE or PROGRAM cycle is
MULTIPLE I/O READ ID (AFh) in progress when the command is initiated, the command is not decoded and the com-
mand cycle in progress is not affected.

Figure 16: READ ID and MULTIPLE I/O READ ID Commands

Extended (READ ID)

0 7 8 15 16 31 32
C
LSB
DQ0 Command
MSB
LSB LSB LSB
DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT
MSB MSB MSB

Manufacturer Device UID

identification identification

Dual (MULTIPLE I/O READ ID )

0 3 4 7 8 15
C
LSB LSB LSB
DQ[1:0] Command DOUT DOUT DOUT DOUT
MSB MSB MSB

Manufacturer Device
identification identification

Quad (MULTIPLE I/O READ ID )

0 1 2 3 4 7
C
LSB LSB LSB
DQ[3:0] Command DOUT DOUT DOUT DOUT
MSB MSB MSB

Manufacturer Device
identification identification
Don’t Care

Note: 1. S# not shown.

09005aef864f8d6d
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© 2013 Micron Technology, Inc. All rights reserved.
 512Mb, 1.8V Multiple I/O Serial Flash Memory
READ SERIAL FLASH DISCOVERY PARAMETER Operation

READ SERIAL FLASH DISCOVERY PARAMETER Operation

READ SERIAL FLASH DISCOVERY PARAMETER Command
To execute READ SERIAL FLASH DISCOVERY PARAMETER command, S# is driven
LOW. The command code is input on DQ0, followed by three address bytes and eight
dummy clock cycles (address is always 3 bytes, even if the device is configured to work
in 4-byte address mode). The device outputs the information starting from the specified
address. When the 2048-byte boundary is reached, the data output wraps to address 0 of
the serial Flash discovery parameter table. The operation is terminated by driving S#
HIGH at any time during data output.
Note: The operation always executes in continuous mode so the read burst wrap setting
in the volatile configuration register does not apply.

Figure 17: READ SERIAL FLASH DISCOVERY PARAMETER Command – 5Ah

Extended
0 7 8 Cx
C

LSB A[MIN]
DQ0 Command
MSB A[MAX]

LSB
DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT
MSB

Dummy cycles
Dual
0 3 4 Cx
C

LSB A[MIN] LSB

DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles
Quad
0 1 2 Cx
C

LSB A[MIN] LSB

DQ[3:0] Command DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles Don’t Care

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1); For dual protocol, Cx = 3 + (A[MAX] + 1)/2;
For quad protocol, Cx = 1 + (A[MAX] + 1)/4.
2. S# not shown.

09005aef864f8d6d
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© 2013 Micron Technology, Inc. All rights reserved.
 512Mb, 1.8V Multiple I/O Serial Flash Memory
READ MEMORY Operations

READ MEMORY Operations

To initiate a command, S# is driven LOW and the command code is input on DQn, fol-
lowed by input of the address bytes on DQn. The operation is terminated by driving S#
HIGH at any time during data output.

Table 22: READ MEMORY Operations

Operation Name Description/Conditions

READ (03h) The device supports 3-bytes addressing (default), with A[23:0] input dur-
FAST READ (0Bh) ing address cycle. After any READ command is executed, the device will
output data from the selected address. After the boundary is reached, the
DUAL OUTPUT FAST READ (3Bh)
device will start reading again from the beginning.
DUAL INPUT/OUTPUT FAST READ(BBh) Each address bit is latched in during the rising edge of the clock. The ad-
QUAD OUTPUT FAST READ (6Bh) dressed byte can be at any location, and the address automatically incre-
QUAD INPUT/OUTPUT FAST READ (EBh) ments to the next address after each byte of data is shifted out; there-
fore, a die can be read with a single command.
DTR FAST READ (0Dh)
FAST READ can operate at a higher frequency (fC).
DTR DUAL OUTPUT FAST READ (3Dh) DTR commands function in DTR protocol regardless of settings in the
DTR DUAL INPUT/OUTPUT FAST READ (BDh) nonvolatile configuration register or enhanced volatile configuration reg-
DTR QUAD OUTPUT FAST READ (6Dh) ister; other commands function in DTR protocol only after DTR protocol is
enabled by the register settings.
DTR QUAD INPUT/OUTPUT FAST READ (EDh)
E7h is similar to the QUAD I/O FAST READ command except that the low-
QUAD INPUT/OUTPUT WORD READ (E7h) est address bit (A0) must equal 0 and only four dummy clocks are re-
quired prior to the data output. This command is supported in extended-
SPI and quad-SPI protocols, but not in the DTR protocol; it is ignored it in
dual-SPI protocol.

09005aef864f8d6d
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© 2013 Micron Technology, Inc. All rights reserved.
 512Mb, 1.8V Multiple I/O Serial Flash Memory
4-BYTE READ MEMORY Operations

4-BYTE READ MEMORY Operations

Table 23: 4-BYTE READ MEMORY Operations

Operation Name Description/Conditions

4-BYTE READ (13h) READ MEMORY operations can be extended to a 4-bytes address range,
4-BYTE FAST READ (0Ch) with [A31:0] input during address cycle.
Selection of the 3-byte or 4-byte address range can be enabled in two
4-BYTE DUAL OUTPUT FAST READ (3Ch)
ways: through the nonvolatile configuration register or through the ENA-
4-BYTE DUAL INPUT/OUTPUT FAST READ (BCh) BLE 4-BYTE ADDRESS MODE/EXIT 4-BYTE ADDRESS MODE commands.
4-BYTE QUAD OUTPUT FAST READ (6Ch) Each address bit is latched in during the rising edge of the clock. The ad-
4-BYTE QUAD INPUT/OUTPUT FAST READ dressed byte can be at any location, and the address automatically incre-
(ECh) ments to the next address after each byte of data is shifted out; there-
fore, a die can be read with a single command.
DTR 4-BYTE FAST READ (0Eh)
FAST READ can operate at a higher frequency (fC).
DTR 4-BYTE DUAL INPUT/OUTPUT FAST READ 4-BYTE commands and DTR 4-BYTE commands function in 4-BYTE and
(BEh) DTR 4-BYTE protocols regardless of settings in the nonvolatile configura-
DTR 4-BYTE QUAD INPUT/OUTPUT FAST READ tion register or enhanced volatile configuration register; other commands
(EEh) function in 4-BYTE and DTR protocols only after the specific protocol is
enabled by the register settings.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
READ MEMORY Operations Timings

READ MEMORY Operations Timings

Figure 18: READ – 03h/13h3

Extended
0 7 8 Cx
C

LSB A[MIN]
DQ[0] Command
MSB A[MAX]
LSB
DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT
MSB

Don’t Care

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1); For dual protocol, Cx = 3 + (A[MAX] + 1)/2;
For quad protocol, Cx = 1 + (A[MAX] + 1)/4.
2. S# not shown.
3. READ and 4-BYTE READ commands.

Figure 19: FAST READ – 0Bh/0Ch3

Extended
0 7 8 Cx
C

LSB A[MIN]
DQ0 Command
MSB A[MAX]

LSB
DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT
MSB

Dummy cycles
Dual
0 3 4 Cx
C

LSB A[MIN] LSB

DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles
Quad
0 1 2 Cx
C

LSB A[MIN] LSB

DQ[3:0] Command DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles Don’t Care

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1); For dual protocol, Cx = 3 + (A[MAX] + 1)/2;
For quad protocol, Cx = 1 + (A[MAX] + 1)/4.
2. S# not shown.
3. FAST READ and 4-BYTE FAST READ commands.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
READ MEMORY Operations Timings

Figure 20: DUAL OUTPUT FAST READ – 3Bh/3Ch3

Extended 0 7 8 Cx
C

LSB A[MIN] LSB

DQ0 Command DOUT DOUT DOUT DOUT DOUT
MSB A[MAX]

DQ1 High-Z DOUT DOUT DOUT DOUT DOUT

MSB

Dummy cycles
Dual
0 3 4 Cx
C

LSB A[MIN] LSB

DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1); For dual protocol, Cx = 3 + (A[MAX] + 1)/2.
2. S# not shown.
3. DUAL OUTPUT FAST READ and 4-BYTE DUAL OUTPUT FAST READ commands.

Figure 21: DUAL INPUT/OUTPUT FAST READ – BBh/BCh3

Extended
0 7 8 Cx
C

LSB A[MIN] LSB

DQ0 Command DOUT DOUT DOUT DOUT DOUT
MSB

DQ1 High-Z DOUT DOUT DOUT DOUT DOUT

A[MAX] MSB

Dummy cycles
Dual
0 3 4 Cx
C

LSB A[MIN] LSB

DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/2; For dual protocol, Cx = 3 + (A[MAX] +
1)/2.
2. S# not shown.
3. DUAL INPUT/OUTPUT FAST READ and 4-BYTE DUAL INPUT/OUTPUT FAST READ com-
mands.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
READ MEMORY Operations Timings

Figure 22: QUAD OUTPUT FAST READ – 6Bh/6Ch3

Extended
0 7 8 Cx
C
LSB A[MIN] LSB
DQ0 Command DOUT DOUT DOUT
MSB A[MAX]
DQ[2:1] High-Z DOUT DOUT DOUT

DQ3 ‘1’ DOUT DOUT DOUT

MSB

Dummy cycles
Quad
0 1 2 Cx
C

LSB A[MIN] LSB

DQ[3:0] Command DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1); For quad protocol, Cx = 1 + (A[MAX] +
1)/4.
2. S# not shown.
3. QUAD OUTPUT FAST READ and 4-BYTE QUAD OUTPUT FAST READ commands.

Figure 23: QUAD INPUT/OUTPUT FAST READ – EBh/ECh3

Extended
0 7 8 Cx
C
LSB A[MIN] LSB
DQ0 Command DOUT DOUT DOUT
MSB

DQ[2:1] High-Z DOUT DOUT DOUT

DQ3 ‘1’ DOUT DOUT DOUT

A[MAX] MSB

Dummy cycles

Quad
0 1 2 Cx
C

LSB A[MIN] LSB

DQ[3:0] Command DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/4; For quad protocol, Cx = 1 + (A[MAX] +
1)/4.
2. S# not shown.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
READ MEMORY Operations Timings

3. QUAD INPUT/OUTPUT FAST READ and 4-BYTE QUAD INPUT/OUTPUT FAST READ com-
mands.

Figure 24: QUAD INPUT/OUTPUT WORD READ – E7h3

Extended 0 7 8 Cx
C
LSB A[MIN] LSB
DQ0 Command DOUT DOUT DOUT
MSB
DQ[3:1] High-Z DOUT DOUT DOUT
A[MAX] MSB

Four dummy cycles

Quad
0 1 2 Cx
C

LSB A[MIN] LSB

DQ[3:0] Command DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/4; For quad protocol, Cx = 1 + (A[MAX] +
1)/4.
2. S# not shown.
3. QUAD INPUT/OUTPUT WORD READ and 4-BYTE QUAD INPUT/OUTPUT WORD READ
commands.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
READ MEMORY Operations Timings

Figure 25: DTR FAST READ – 0Dh/E0h3

Extended
0 7 8 Cx
C

LSB A[MIN]
DQ0 Command
MSB A[MAX]

LSB
DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT
MSB

Dummy cycles
Dual
0 3 4 Cx
C

LSB A[MIN] LSB

DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles
Quad
0 1 2 Cx
C

LSB A[MIN] LSB

DQ[3:0] Command DOUT DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles Don’t Care

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/2; For dual protocol, Cx = 3 + (A[MAX] +
1)/4; For quad protocol, Cx = 1 + (A[MAX] + 1)/8.
2. S# not shown.
3. DTR FAST READ and 4-BYTE DTR FAST READ commands.

Figure 26: DTR DUAL OUTPUT FAST READ – 3Dh3

Extended
0 7 8 Cx
C
LSB A[MIN] LSB
DQ0 Command DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT
MSB A[MAX]

DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT
MSB

Dual Dummy cycles

0 3 4 Cx
C

LSB A[MIN] LSB

DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/2; For dual protocol, Cx = 3 + (A[MAX] +
1)/4.
2. S# not shown.
3. DTR DUAL OUTPUT FAST READ and 4-BYTE DTR DUAL OUTPUT FAST READ commands.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
READ MEMORY Operations Timings

Figure 27: DTR DUAL INPUT/OUTPUT FAST READ – BDh3

Extended
0 7 8 Cx
C

LSB A[MIN] LSB

DQ0 Command DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT
MSB

DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT
A[MAX] MSB

Dummy cycles
Dual
0 3 4 Cx
C

LSB A[MIN] LSB

DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/4; For dual protocol, Cx = 3 + (A[MAX] +
1)/8.
2. S# not shown.
3. DTR DUAL INPUT/OUTPUT FAST READ and 4-BYTE DTR DUAL INPUT/OUTPUT FAST READ
commands.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
READ MEMORY Operations Timings

Figure 28: DTR QUAD OUTPUT FAST READ – 6Dh3

Extended
0 7 8 Cx
C
LSB A[MIN] LSB
DQ0 Command DOUT DOUT DOUT DOUT
MSB A[MAX]
DQ[2:1] High-Z DOUT DOUT DOUT DOUT

DQ3 ‘1’ DOUT DOUT DOUT DOUT

MSB
Dummy cycles
Quad
0 1 2 Cx
C
LSB A[MIN] LSB
DQ[3:0] Command DOUT DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/2; For quad protocol, Cx = 1 + (A[MAX] +
1)/8.
2. S# not shown.
3. DTR QUAD OUTPUT FAST READ and 4-BYTE DTR QUAD OUTPUT FAST READ commands.

Figure 29: DTR QUAD INPUT/OUTPUT FAST READ – EDh3

Extended
0 7 8 Cx
C
LSB A[MIN] LSB
DQ0 Command DOUT DOUT DOUT DOUT
MSB

DQ[2:1] High-Z DOUT DOUT DOUT DOUT

DQ3 ‘1’ DOUT DOUT DOUT DOUT

A[MAX] MSB

Dummy cycles
Quad
0 1 2 Cx
C
LSB A[MIN] LSB
DQ[3:0] Command DOUT DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/8; For quad protocol, Cx = 1 + (A[MAX] +
1)/8.
2. S# not shown.
3. DTR QUAD INPUT/OUTPUT FAST READ and 4-BYTE DTR QUAD INPUT/OUTPUT FAST
READ commands.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
WRITE ENABLE/DISABLE Operations

WRITE ENABLE/DISABLE Operations

To initiate a command, S# is driven LOW and held LOW until the eighth bit of the com-
mand code has been latched in, after which it must be driven HIGH. For extended, dual,
and quad SPI protocols respectively, the command code is input on DQ0, DQ[1:0], and
DQ[3:0]. If S# is not driven HIGH after the command code has been latched in, the com-
mand is not executed, flag status register error bits are not set, and the write enable
latch remains cleared to its default setting of 0, providing protection against errant data
modification.

Table 24: WRITE ENABLE/DISABLE Operations

Operation Name Description/Conditions

WRITE ENABLE Sets the write enable latch bit before each PROGRAM, ERASE, and WRITE command.
WRITE DISABLE Clears the write enable latch bit. In case of a protection error, WRITE DISABLE will not clear the
bit. Instead, a CLEAR FLAG STATUS REGISTER command must be issued to clear both flags.

Figure 30: WRITE ENABLE and WRITE DISABLE Timing

Extended
0 1 2 3 4 5 6 7
C

S#
Command Bits LSB

DQ0 0 0 0 0 0 1 1 0
MSB
DQ1 High-Z

Dual
0 1 2 3
C

S#
Command Bits
LSB

DQ0 0 0 1 0

DQ1 0 0 0 1
MSB
Quad
0 1
C
S#
Command Bits LSB

DQ0 0 0

DQ1 0 1

DQ2 0 1

DQ3 0 0 Don’t Care

MSB

Note: 1. WRITE ENABLE command sequence and code, shown here, is 06h (0000 0110 binary);
WRITE DISABLE is identical, but its command code is 04h (0000 0100 binary).

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
READ REGISTER Operations

READ REGISTER Operations

To initiate a command, S# is driven LOW. For extended SPI protocol, input is on DQ0,
output on DQ1. For dual SPI protocol, input/output is on DQ[1:0] and for quad SPI pro-
tocol, input/output is on DQ[3:0]. The operation is terminated by driving S# HIGH at
any time during data output.

Table 25: READ REGISTER Operations

Operation Name Description/Conditions Note

READ STATUS REGISTER (05h) Can be read continuously and at any time, including during a PRO-
READ FLAG STATUS REGISTER (70h) GRAM, ERASE, or WRITE operation. If one of these operations is in
progress, checking the write in progress bit or P/E controller bit is
recommended before executing the command.
READ NONVOLATILE CONFIGURATION Can be read continuously. After all 16 bits of the register have been 1
REGISTER (B5h) read, a 0 is output. All reserved fields output a value of 1.
READ VOLATILE CONFIGURATION REGIS- When the register is read continuously, the same byte is output re-
TER (85h) peatedly.
READ ENHANCED VOLATILE CONFIGURA-
TION REGISTER (65h)
READ EXTENDED ADDRESS REGISTER (C8h)

Note: 1. The operation will have output data starting from the least significant byte.

Figure 31: READ REGISTER Timing

Extended
0 7 8 9 10 11 12 13 14 15
C

LSB
DQ0 Command
MSB
LSB
DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT
MSB

Dual
0 3 4 5 6 7
C

LSB LSB
DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT
MSB MSB

Quad
0 1 2 3
C

LSB LSB
DQ[3:0] Command DOUT DOUT DOUT
MSB Don’t Care
MSB

Notes: 1. Supports all READ REGISTER commands except DYNAMIC PROTECTION BITS READ.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
WRITE REGISTER Operations

2. A READ NONVOLATILE CONFIGURATION REGISTER operation will output data starting

from the least significant byte.
3. S# not shown.

WRITE REGISTER Operations

Before a WRITE REGISTER command is initiated, the WRITE ENABLE command must
be executed to set the write enable latch bit to 1. To initiate a command, S# is driven
LOW and held LOW until the eighth bit of the last data byte has been latched in, after
which it must be driven HIGH; for the WRITE NONVOLATILE CONFIGURATION REG-
ISTER command, S# is held LOW until the 16th bit of the last data byte has been latched
in. For the extended, dual, and quad SPI protocols respectively, input is on DQ0,
DQ[1:0], and DQ[3:0], followed by the data bytes. If S# is not driven HIGH, the com-
mand is not executed, flag status register error bits are not set, and the write enable
latch remains set to 1. The operation is self-timed and its duration is tW for WRITE STA-
TUS REGISTER and tNVCR for WRITE NONVOLATILE CONFIGURATION REGISTER.

Table 26: WRITE REGISTER Operations

Operation Name Description/Conditions Note

WRITE STATUS REGISTER (01h) The WRITE STATUS REGISTER command writes new values to status 1
register bits 7:2, enabling software data protection. The status reg-
ister can also be combined with the W# signal to provide hardware
data protection. This command has no effect on status register bits
1:0.
WRITE NONVOLATILE CONFIGURATION For the WRITE STATUS REGISTER and WRITE NONVOLATILE CONFIG-
REGISTER (B1h) URATION REGISTER commands, when the operation is in progress,
the write in progress bit is set to 1. The write enable latch bit is
cleared to 0, whether the operation is successful or not. The status
register and flag status register can be polled for the operation sta-
tus. When the operation completes, the write in progress bit is
cleared to 0, whether the operation is successful or not.
WRITE VOLATILE CONFIGURATION REGIS- Because register bits are volatile, change to the bits is immediate.
TER (81h) Reserved bits are not affected by this command.
WRITE ENHANCED VOLATILE CONFIGURA-
TION REGISTER (61h)
WRITE EXTENDED ADDRESS REGISTER
(C5h)

Note: 1. The WRITE NONVOLATILE CONFIGURATION REGISTER operation must have input data
starting from the least significant byte.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
WRITE REGISTER Operations

Figure 32: WRITE REGISTER Timing

Extended
0 7 8 9 10 11 12 13 14 15
C
LSB LSB
DQ0 Command DIN DIN DIN DIN DIN DIN DIN DIN DIN
MSB MSB
Dual
0 3 4 5 6 7
C
LSB LSB
DQ[1:0] Command DIN DIN DIN DIN DIN
MSB MSB

Quad
0 1 2 3
C
LSB LSB
DQ[3:0] Command DIN DIN DIN
MSB MSB

Notes: 1. Supports all WRITE REGISTER commands except WRITE LOCK REGISTER.
2. Data is two bytes for a WRITE NONVOLATILE CONFIGURATION REGISTER operation, in-
put starting from the least significant byte.
3. S# not shown.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
CLEAR FLAG STATUS REGISTER Operation

CLEAR FLAG STATUS REGISTER Operation

To initiate a command, S# is driven LOW. For the extended, dual, and quad SPI proto-
cols respectively, input is on DQ0, DQ[1:0], and DQ[3:0]. The operation is terminated by
driving S# HIGH at any time.

Table 27: CLEAR FLAG STATUS REGISTER Operation

Operation Name Description/Conditions

CLEAR FLAG STATUS Resets the error bits (erase, program, and protection)
REGISTER (50h)

Figure 33: CLEAR FLAG STATUS REGISTER Timing

Extended
0 7
C
LSB
DQ0 Command
MSB
Dual
0 3
C
LSB
DQ[1:0] Command
MSB

Quad
0 1
C
LSB
DQ[3:0] Command
MSB

Note: 1. S# not shown.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
PROGRAM Operations

PROGRAM Operations
Before a PROGRAM command is initiated, the WRITE ENABLE command must be exe-
cuted to set the write enable latch bit to 1. To initiate a command, S# is driven LOW and
held LOW until the eighth bit of the last data byte has been latched in, after which it
must be driven HIGH. If S# is not driven HIGH, the command is not executed, flag sta-
tus register error bits are not set, and the write enable latch remains set to 1. Each ad-
dress bit is latched in during the rising edge of the clock. When a command is applied to
a protected sector, the command is not executed, the write enable latch bit remains set
to 1, and flag status register bits 1 and 4 are set. If the operation times out, the write ena-
ble latch bit is reset and the program fail bit is set to 1.
Note: The manner of latching data shown and explained in the timing diagrams ensures
that the number of clock pulses is a multiple of one byte before command execution,
helping reduce the effects of noisy or undesirable signals and enhancing device data
protection.

Table 28: PROGRAM Operations

Operation Name Description/Conditions

PAGE PROGRAM (02h) A PROGRAM operation changes a bit from 1 to 0.
DUAL INPUT FAST PROGRAM (A2h) When the operation is in progress, the write in progress bit is set to 1.
The write enable latch bit is cleared to 0, whether the operation is suc-
EXTENDED DUAL INPUT FAST PROGRAM (D2h)
cessful or not. The status register and flag status register can be polled
QUAD INPUT FAST PROGRAM (32h) for the operation status. When the operation completes, the write in
EXTENDED QUAD INPUT FAST PROGRAM (38h) progress bit is cleared to 0. An operation can be paused or resumed by
the PROGRAM/ERASE SUSPEND or PROGRAM/ERASE RESUME command,
respectively.
If the bits of the least significant address, which is the starting address,
are not all zero, all data transmitted beyond the end of the current
page is programmed from the starting address of the same page. If the
number of bytes sent to the device exceed the maximum page size, pre-
viously latched data is discarded and only the last maximum page-size
number of data bytes are guaranteed to be programmed correctly with-
in the same page. If the number of bytes sent to the device is less than
the maximum page size, they are correctly programmed at the specified
addresses without any effect on the other bytes of the same page.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
4-BYTE PROGRAM Operations

4-BYTE PROGRAM Operations

Table 29: 4-BYTE PROGRAM Operations

Operation Name Description/Conditions

4-BYTE PAGE PROGRAM (12h) PROGRAM operations can be extended to a 4-bytes address range, with
4-BYTE QUAD INPUT FAST PROGRAM (34h) [A31:0] input during address cycle.
Selection of the 3-byte or 4-byte address range can be enabled in two
4-BYTE EXTENDED QUAD INPUT FAST PRO-
ways: through the nonvolatile configuration register or through the EN-
GRAM (3Eh)
ABLE 4-BYTE ADDRESS MODE/EXIT 4-BYTE ADDRESS MODE commands.
4-BYTE commands and DTR 4-BYTE commands function in 4-BYTE and
DTR 4-BYTE protocol regardless of settings in the nonvolatile configura-
tion register or enhanced volatile configuration register; other com-
mands function in 4-BYTE and DTR protocols only after the specific pro-
tocol is enabled by the register settings.

PROGRAM Operations Timings

Figure 34: PAGE PROGRAM Command

Extended
0 7 8 Cx
C

LSB A[MIN] LSB

DQ0 Command DIN DIN DIN DIN DIN DIN DIN DIN DIN
MSB A[MAX] MSB

Dual
0 3 4 Cx
C

LSB A[MIN] LSB

DQ[1:0] Command DIN DIN DIN DIN DIN
MSB A[MAX] MSB

Quad
0 1 2 Cx
C

LSB A[MIN] LSB

DQ[3:0] Command DIN DIN DIN
MSB A[MAX] MSB

Notes: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1); For dual SPI protocol, Cx = 3 + (A[MAX]
+ 1)/2; For quad SPI protocol, Cx = 1 + (A[MAX] + 1)/4.
2. S# not shown. The operation is self-timed, and its duration is tPP.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
PROGRAM Operations Timings

Figure 35: DUAL INPUT FAST PROGRAM Command

Extended
0 7 8 Cx
C

LSB A[MIN] LSB

DQ0 Command DIN DIN DIN DIN DIN
MSB A[MAX]

DQ1 High-Z DIN DIN DIN DIN DIN

MSB

Dual
0 3 4 Cx
C

LSB A[MIN] LSB

DQ[1:0] Command DIN DIN DIN DIN DIN
MSB A[MAX] MSB

Notes: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1); For dual SPI protocol, Cx = 3 + (A[MAX]
+ 1)/2.
2. S# not shown.

Figure 36: EXTENDED DUAL INPUT FAST PROGRAM Command

Extended
0 7 8 Cx
C

LSB A[MIN] LSB

DQ0 Command DIN DIN DIN DIN DIN
MSB

DQ1 High-Z DIN DIN DIN DIN DIN

A[MAX] MSB

Dual
0 3 4 Cx
C

LSB A[MIN] LSB

DQ[1:0] Command DIN DIN DIN DIN DIN
MSB A[MAX] MSB

Notes: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1)/2; For dual SPI protocol, Cx = 3 +
(A[MAX] + 1)/2.
2. S# not shown.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
PROGRAM Operations Timings

Figure 37: QUAD INPUT FAST PROGRAM Command

Extended
0 7 8 Cx
C

LSB A[MIN] LSB

DQ0 Command DIN DIN DIN
MSB A[MAX]

DQ[3:1] High-Z DIN DIN DIN

MSB

Quad
0 1 2 Cx
C

LSB A[MIN] LSB

DQ[3:0] Command DIN DIN DIN
MSB A[MAX] MSB

Notes: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1); For quad SPI protocol, Cx = 1 +
(A[MAX] + 1)/4.
2. S# not shown.

Figure 38: EXTENDED QUAD INPUT FAST PROGRAM Command

Extended
0 7 8 Cx
C

LSB A[MIN] LSB

DQ0 Command DIN DIN DIN
MSB

DQ[2:1] High-Z DIN DIN DIN

DQ3 ‘1’ DIN DIN DIN

A[MAX] MSB

Quad
0 1 2 Cx
C

LSB A[MIN] LSB

DQ[3:0] Command DIN DIN DIN
MSB A[MAX] MSB

Notes: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1)/4; For quad SPI protocol, Cx = 1 +
(A[MAX] + 1)/4.
2. S# not shown.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
ERASE Operations

ERASE Operations
An ERASE operation changes a bit from 0 to 1. Before any ERASE command is initiated,
the WRITE ENABLE command must be executed to set the write enable latch bit to 1; if
not, the device ignores the command and no error bits are set to indicate operation fail-
ure. S# is driven LOW and held LOW until the eighth bit of the last data byte has been
latched in, after which it must be driven HIGH. The operations are self-timed, and dura-
tion is tSSE, tSE, or tBE according to command.
If S# is not driven HIGH, the command is not executed, flag status register error bits are
not set, and the write enable latch remains set to 1. A command applied to a protected
subsector is not executed. Instead, the write enable latch bit remains set to 1, and flag
status register bits 1 and 5 are set.
When the operation is in progress, the program or erase controller bit of the flag status
register is set to 0. In addition, the write in progress bit is set to 1. When the operation
completes, the write in progress bit is cleared to 0. The write enable latch bit is cleared
to 0, whether the operation is successful or not. If the operation times out, the write en-
able latch bit is reset and the erase error bit is set to 1.
The status register and flag status register can be polled for the operation status. When
the operation completes, these register bits are cleared to 1.
Note: For all ERASE operations, noisy or undesirable signal effects can be reduced and
device data protection enhanced by holding S# LOW until the eighth bit of the last data
byte has been latched in; this ensures that the number of clock pulses is a multiple of
one byte before command execution.

Table 30: ERASE Operations

Operation Name Description/Conditions

SUBSECTOR ERASE Sets the selected subsector or sector bits to FFh. Any address within the subsector is valid
SECTOR ERASE for entry. Each address bit is latched in during the rising edge of the clock. The operation
can be suspended and resumed by the PROGRAM/ERASE SUSPEND and PROGRAM/ERASE
RESUME commands, respectively.
BULK ERASE Sets the device bits to FFh.
The command is not executed if any sector is locked. Instead, the write enable latch bit
remains set to 1, and flag status register bits 1 and 5 are set.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
ERASE Operations

Figure 39: SUBSECTOR and SECTOR ERASE Timing

Extended
0 7 8 Cx
C
LSB A[MIN]
DQ0 Command
MSB A[MAX]
Dual
0 3 4 Cx
C
LSB A[MIN]
DQ0[1:0] Command
MSB A[MAX]

Quad
0 1 2 Cx
C
LSB A[MIN]
DQ0[3:0] Command
MSB A[MAX]

Notes: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1); For dual SPI protocol, Cx = 3 + (A[MAX]
+ 1)/2; For quad SPI protocol, Cx = 1 + (A[MAX] + 1)/4.
2. S# not shown.

Figure 40: BULK ERASE Timing

Extended
0 7
C
LSB
DQ0 Command
MSB
Dual
0 3
C
LSB
DQ[1:0] Command
MSB

Quad
0 1
C
LSB
DQ[3:0] Command
MSB

Note: 1. S# not shown.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
SUSPEND/RESUME Operations

SUSPEND/RESUME Operations
PROGRAM/ERASE SUSPEND Operations
A PROGRAM/ERASE SUSPEND command enables the memory controller to interrupt
and suspend an array PROGRAM or ERASE operation within the program/erase latency.
To initiate the command, S# is driven LOW, and the command code is input on DQn.
The operation is terminated by the PROGRAM/ERASE RESUME command.
For a PROGRAM SUSPEND, the flag status register bit 2 is set to 1. For an ERASE SUS-
PEND, the flag status register bit 6 is set to 1.
After an erase/program latency time, the flag status register bit 7 is also set to 1, but the
device is considered in suspended state once bit 7 of the flag status register outputs 1
with at least one byte output. In the suspended state, the device is waiting for any oper-
ation.
If the time remaining to complete the operation is less than the suspend latency, the de-
vice completes the operation and clears the flag status register bits 2 or 6, as applicable.
Because the suspend state is volatile, if there is a power cycle, the suspend state infor-
mation is lost and the flag status register powers up as 80h.
It is possible to nest a PROGRAM/ERASE SUSPEND operation inside a PROGRAM/
ERASE SUSPEND operation just once. Issue an ERASE command and suspend it. Then
issue a PROGRAM command and suspend it also. With the two operations suspended,
the next PROGRAM/ERASE RESUME command resumes the latter operation, and a sec-
ond PROGRAM/ERASE RESUME command resumes the former (or first) operation.

PROGRAM/ERASE RESUME Operations

A PROGRAM/ERASE RESUME operation terminates the PROGRAM/ERASE RESUME
command. To initiate the command, S# is driven LOW, and the command code is input
on DQn. The operation is terminated by driving S# HIGH.

Table 31: SUSPEND/RESUME Operations

Operation Name Description/Conditions

PROGRAM SUSPEND A READ operation is possible in any page except the one in a suspended state. Reading
from a sector that is in a suspended state will output indeterminate data.
ERASE SUSPEND A PROGRAM or READ operation is possible in any sector except the one in a suspended
state. Reading from a sector that is in a suspended state will output indeterminate data.
During a SUSPEND SUBSECTOR ERASE operation, reading an address in the sector that
contains the suspended subsector could output indeterminate data.
The device ignores a PROGRAM command to a sector that is in an erase suspend state; it
also sets the flag status register bit 4 to 1 (program failure/protection error) and leaves
the write enable latch bit unchanged.
When the ERASE resumes, it does not check the new lock status of the WRITE VOLATILE
LOCK BITS command.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
SUSPEND/RESUME Operations

Table 31: SUSPEND/RESUME Operations (Continued)

Operation Name Description/Conditions

PROGRAM RESUME The status register write in progress bit is set to 1 and the flag status register program
ERASE RESUME erase controller bit is set to 0. The command is ignored if the device is not in a suspen-
ded state.
When the operation is in progress, the program or erase controller bit of the flag status
register is set to 0. The flag status register can be polled for the operation status. When
the operation completes, that bit is cleared to 1.

Note: 1. See the Operations Allowed/Disallowed During Device States table.

Figure 41: PROGRAM/ERASE SUSPEND or RESUME Timing

Extended
0 7
C
LSB
DQ0 Command
MSB
Dual
0 3
C
LSB
DQ[1:0] Command
MSB

Quad
0 1
C
LSB
DQ[3:0] Command
MSB

Note: 1. S# not shown.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
ONE-TIME PROGRAMMABLE Operations

ONE-TIME PROGRAMMABLE Operations

READ OTP ARRAY Command
To initiate a READ OTP ARRAY command, S# is driven LOW. The command code is in-
put on DQ0, followed by address bytes and dummy clock cycles. Each address bit is
latched in during the rising edge of C. Data is shifted out on DQ1, beginning from the
specified address and at a maximum frequency of fC (MAX) on the falling edge of the
clock. The address increments automatically to the next address after each byte of data
is shifted out. There is no rollover mechanism; therefore, if read continuously, after lo-
cation 0x40, the device continues to output data at location 0x40. The operation is ter-
minated by driving S# HIGH at any time during data output.

Figure 42: READ OTP Command

Extended
0 7 8 Cx
C

LSB A[MIN]
DQ0 Command
MSB A[MAX]

LSB
DQ1 High-Z DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT
MSB

Dummy cycles
Dual
0 3 4 Cx
C

LSB A[MIN] LSB

DQ[1:0] Command DOUT DOUT DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles
Quad
0 1 2 Cx
C

LSB A[MIN] LSB

DQ[3:0] Command DOUT DOUT DOUT
MSB A[MAX] MSB

Dummy cycles Don’t Care

Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1); For dual SPI protocol, Cx = 3 + (A[MAX]
+ 1)/2; For quad SPI protocol, Cx = 1 + (A[MAX] + 1)/4.

PROGRAM OTP ARRAY Command

To initiate the PROGRAM OTP ARRAY command, the WRITE ENABLE command must
be issued to set the write enable latch bit to 1; otherwise, the PROGRAM OTP ARRAY
command is ignored and flag status register bits are not set. S# is driven LOW and held
LOW until the eighth bit of the last data byte has been latched in, after which it must be
driven HIGH. The command code is input on DQ0, followed by address bytes and at
least one data byte. Each address bit is latched in during the rising edge of the clock.
When S# is driven HIGH, the operation, which is self-timed, is initiated; its duration is
tPOTP. There is no rollover mechanism; therefore, after a maximum of 65 bytes are

latched in the subsequent bytes are discarded.

PROGRAM OTP ARRAY programs, at most, 64 bytes to the OTP memory area and one
OTP control byte. When the operation is in progress, the write in progress bit is set to 1.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
ONE-TIME PROGRAMMABLE Operations

The write enable latch bit is cleared to 0, whether the operation is successful or not, and
the status register and flag status register can be polled for the operation status. When
the operation completes, the write in progress bit is cleared to 0.
If the operation times out, the write enable latch bit is reset and the program fail bit is
set to 1. If S# is not driven HIGH, the command is not executed, flag status register error
bits are not set, and the write enable latch remains set to 1. The operation is considered
complete once bit 7 of the flag status register outputs 1 with at least one byte output.
The OTP control byte (byte 64) is used to permanently lock the OTP memory array.

Table 32: OTP Control Byte (Byte 64)

Bit Name Settings Description

0 OTP control byte 0 = Locked Used to permanently lock the 64-byte OTP array. When bit 0 = 1,
1 = Unlocked (Default) the 64-byte OTP array can be programmed. When bit 0 = 0, the
64-byte OTP array is read only.

Once bit 0 has been programmed to 0, it can no longer be

changed to 1. Program OTP array is ignored, the write enable
latch bit remains set, and flag status register bits 1 and 4 are set.

Figure 43: PROGRAM OTP Command

Extended
0 7 8 Cx
C

LSB A[MIN] LSB

DQ0 Command DIN DIN DIN DIN DIN DIN DIN DIN DIN
MSB A[MAX] MSB

Dual
0 3 4 Cx
C

LSB A[MIN] LSB

DQ[1:0] Command DIN DIN DIN DIN DIN
MSB A[MAX] MSB

Quad
0 1 2 Cx
C

LSB A[MIN] LSB

DQ[3:0] Command DIN DIN DIN
MSB A[MAX] MSB

Note: 1. For extended SPI protocol, Cx = 7 + (A[MAX] + 1); For dual SPI protocol, Cx = 3 + (A[MAX]
+ 1)/2; For quad SPI protocol, Cx = 1 + (A[MAX] + 1)/4.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
ADDRESS MODE Operations

ADDRESS MODE Operations

To initiate these commands, S# is driven LOW, and the command is input on DQn.

Table 33: ENTER or EXIT 4-BYTE ADDRESS MODE Operations

Operation Name Description/Conditions

ENTER 4-BYTE ADDRESS MODE (B7h) The effect of the command is immediate. The default address mode is three bytes,
EXIT 4-BYTE ADDRESS MODE (E9h) and the device returns to the default upon exiting the 4-byte address mode.

QUAD PROTOCOL Operations

ENTER or RESET QUAD INPUT/OUTPUT MODE Command
To initiate these commands, the WRITE ENABLE command must not be executed. S#
must be driven LOW, and the command must be input on DQn.

Table 34: ENTER and RESET QUAD PROTOCOL Operations

Operation Name Description/Conditions

ENTER QUAD INPUT/OUTPUT MODE (35h) The effect of the command is immediate.
RESET QUAD INPUT/OUTPUT MODE (F5h)

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
CYCLIC REDUNDANCY CHECK Operations

CYCLIC REDUNDANCY CHECK Operations

A CYCLIC REDUNDANCY CHECK (CRC) operation is a hash function designed to de-
tect accidental changes to raw data and is used commonly in digital networks and stor-
age devices such as hard disk drives. A CRC-enabled device calculates a short, fixed-
length binary sequence, known as the CRC code or just CRC, for each block of data. CRC
can be a higher performance alternative to reading data directly in order to verify re-
cently programmed data. Or, it can be used to check periodically the data integrity of a
large block of data against a stored CRC reference over the life of the product. CRC helps
improve test efficiency for programmer or burn-in stress tests. No system hardware
changes are required to enable CRC.
The CRC-64 operation follows the ECMA standard. The generating polynomial is:
G(x) = x64 + x62 + x57 + x55 + x54 + x53 + x52 + x47 + x46 + x45 + x40 + x39 + x38 + x37 + x35 + x33
+ x32 + x31 + x29 + x27 + x24 + x23 + x22 + x21 + x19 + x17 + x13 + x12 + x10 + x9 + x7 + x4 + x + 1
Note: The data stream sequence is from LSB to MSB and the default initial CRC value is
all zero.
The device CRC operation generates the CRC result of the entire device or of an address
range specified by the operation. Then the CRC result is compared with the expected
CRC data provided in the sequence. Finally the device indicates a pass or fail through
the bit #4 of FLAG STATUS REGISTER. If the CRC fails, it is possible to take corrective
action such as verifying with a normal read mode or by rewriting the array data.
CRC operation supports CRC data read back when CRC check fails; the CRC data gener-
ated from the target address range or entire device will be stored in a dedicated register
GPRR (General Purpose Read Register ) only when CRC check fails, and it can be read
out through the GPRR read sequence with command 96h, least significant byte first.
GPRR is reset to default all 0 at the beginning of the CRC operation, and so customer
will read all 0 if CRC operation pass.
Please note that the GPRR is a volatile register. It is cleared to all 0s on power-up and
hardware/software reset. Read GPRR starts from the first location, when clocked con-
tinuously, will output 00h after location 64.
The CYCLIC REDUNDANCY CHECK operation command sequences are shown in the
tables below, for an entire die or for a selected range.

Table 35: CRC Command Sequence on Entire Device

Command Sequence
Byte# Data Description
1 9Bh Command code for interface activation
2 27h Sub-command code for CRC operation
3 FFh CRC operation option selection (CRC operation on entire device)
4 CRC[7:0] 1st byte of expected CRC value
5–10 CRC[55:8] 2nd to 7th byte of expected CRC value
11 CRC[63:56] 8th byte of expected CRC value
Drive S# HIGH Operation sequence confirmed; CRC operation starts

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
CYCLIC REDUNDANCY CHECK Operations

Table 36: CRC Command Sequence on a Range

Command Sequence
Byte# Data Description
1 9Bh Command code for interface activation
2 27h Sub-command code for CRC operation
3 FEh CRC operation option selection (CRC operation on a range)
4 CRC[7:0] 1st byte of expected CRC value
5 to 10 CRC[55:8] 2nd to 7th byte of expected CRC value
11 CRC[63:56] 8th byte of expected CRC value
12 Start Address [7:0] Specifies the starting byte address for CRC operation
13 to 14 Start Address [23:8]
15 Start Address [31:24]
16 Stop Address [7:0] Specifies the ending byte address for CRC operation
17 to 18 Stop Address [23:8]
19 Stop Address [31:24]
Drive S# HIGH Operation sequence confirmed; CRC operation starts

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
State Table

State Table
The device can be in only one state at a time. Depending on the state of the device,
some operations as shown in the table below are allowed (Yes) and others are not (No).
For example, when the device is in the standby state, all operations except SUSPEND
are allowed in any sector. For all device states except the erase suspend state, if an oper-
ation is allowed or disallowed in one sector, it is allowed or disallowed in all other sec-
tors. In the erase suspend state, a PROGRAM operation is allowed in any sector except
the one in which an ERASE operation has been suspended.

Table 37: Operations Allowed/Disallowed During Device States

Standby Program or Subsector Erase Suspend or Erase Suspend

Operation State Erase State Program Suspend State State Notes
READ (memory) Yes No Yes Yes 1
READ Yes Yes Yes Yes 6
(status/flag status
registers)
PROGRAM Yes No No Yes/No 2
ERASE Yes No No No 3
(sector/subsector)
WRITE Yes No No No 4
WRITE Yes No Yes Yes 5
SUSPEND No Yes No No 7

Notes: 1. All READ operations except READ STATUS REGISTER and READ FLAG REGISTER. When is-
sued to a sector or subsector that is simultaneously in an erase suspend state, the READ
operation is accepted, but the data output is not guaranteed until the erase has comple-
ted.
2. All PROGRAM operations except PROGRAM OTP. In the erase suspend state, a PROGRAM
operation is allowed in any sector (Yes) except the sector (No) in which an ERASE opera-
tion has been suspended.
3. Applies to the SECTOR ERASE or SUBSECTOR ERASE operation.
4. Applies to the following operations: WRITE STATUS REGISTER, WRITE NONVOLATILE
CONFIGURATION REGISTER, PROGRAM OTP, and BULK ERASE.
5. Applies to the WRITE VOLATILE CONFIGURATION REGISTER, WRITE ENHANCED VOLA-
TILE CONFIGURATION REGISTER, WRITE ENABLE, WRITE DISABLE, CLEAR FLAG STATUS
REGISTER, WRITE EXTENDED ADDRESS REGISTER, or WRITE LOCK REGISTER operation.
6. Applies to the READ STATUS REGISTER or READ FLAG STATUS REGISTER operation.
7. Applies to the PROGRAM SUSPEND or ERASE SUSPEND operation.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
XIP Mode

XIP Mode
Execute-in-place (XIP) mode allows the memory to be read by sending an address to the
device and then receiving the data on one, two, or four pins in parallel, depending on
the customer requirements. XIP mode offers maximum flexibility to the application,
saves instruction overhead, and reduces random access time.

Activate or Terminate XIP Using Volatile Configuration Register

Applications that boot in SPI and must switch to XIP use the volatile configuration reg-
ister. XIP provides faster memory READ operations by requiring only an address to exe-
cute, rather than a command code and an address.
To activate XIP requires two steps. First, enable XIP by setting volatile configuration reg-
ister bit 3 to 0. Next, drive the XIP confirmation bit to 0 during the next FAST READ op-
eration. XIP is then active. Once in XIP, any command that occurs after S# is toggled re-
quires only address bits to execute; a command code is not necessary, and device oper-
ations use the SPI protocol that is enabled. XIP is terminated by driving the XIP confir-
mation bit to 1. The device automatically resets volatile configuration register bit 3 to 1.
Note: For devices with basic XIP, indicated by a part number feature set digit of 2 or 4, it
is not necessary to set the volatile configuration register bit 3 to 0 to enable XIP. Instead,
it is enabled by setting the XIP confirmation bit to 0 during the first dummy clock cycle
after any FAST READ command.

Activate or Terminate XIP Using Nonvolatile Configuration Register

Applications that must boot directly in XIP use the nonvolatile configuration register. To
enable a device to power-up in XIP using this register, set nonvolatile configuration reg-
ister bits [11:9]. Settings vary according to protocol, as explained in the Nonvolatile
Configuration Register section. Because the device boots directly in XIP, after the power
cycle, no command code is necessary. XIP is terminated by driving the XIP confirmation
bit to 1.

Figure 44: XIP Mode Directly After Power-On

Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
C Mode 0
tVSI (<100µ)

VCC NVCR check:

XIP enabled

S#
A[MIN] LSB
DQ0 Xb DOUT DOUT DOUT DOUT DOUT

DQ[3:1] DOUT DOUT DOUT DOUT DOUT

A[MAX] MSB

Dummy cycles

Note: 1. Xb is the XIP confirmation bit and should be set as follows: 0 to keep XIP state; 1 to exit
XIP mode and return to standard read mode.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
XIP Mode

Confirmation Bit Settings Required to Activate or Terminate XIP

The XIP confirmation bit setting activates or terminates XIP after it has been enabled or
disabled. This bit is the value on DQ0 during the first dummy clock cycle in the FAST
READ operation. In dual I/O XIP mode, the value of DQ1 during the first dummy clock
cycle after the addresses is always "Don't Care." In quad I/O XIP mode, the values of
DQ3, DQ2, and DQ1 during the first dummy clock cycle after the addresses are always
"Don't Care."

Table 38: XIP Confirmation Bit

Bit Value Description

0 Activates XIP: While this bit is 0, XIP remains activated.
1 Terminates XIP: When this bit is set to 1, XIP is terminated and the device returns to SPI.

Table 39: Effects of Running XIP in Different Protocols

Protocol Effect
Extended I/O In a device with a dedicated part number where RST# is enabled, a LOW pulse on that pin resets
and Dual I/O XIP and the device to the state it was in previous to the last power-up, as defined by the nonvo-
latile configuration register.
Dual I/O Values of DQ1 during the first dummy clock cycle are "Don't Care."
Quad I/O1 Values of DQ[3:1] during the first dummy clock cycle are "Don't Care." In a device with a dedica-
ted part number, it is only possible to reset memory when the device is deselected.

Note: 1. In a device with a dedicated part number where RST# is enabled, a LOW pulse on that
pin resets XIP and the device to the state it was in previous to the last power-up, as de-
fined by the nonvolatile configuration register only when the device is deselected.

Terminating XIP After a Controller and Memory Reset

The system controller and the device can become out of synchronization if, during the
life of the application, the system controller is reset without the device being reset. In
such a case, the controller can reset the memory to power-on reset if the memory has
reset functionality. (Reset is available in devices with a dedicated part number.)
• 7 clock cycles within S# LOW (S# becomes HIGH before 8th clock cycle)
• + 9 clock cycles within S# LOW (S# becomes HIGH before 10th clock cycle)
• + 13 clock cycles within S# LOW (S# becomes HIGH before 14th clock cycle)
• + 17 clock cycles within S# LOW (S# becomes HIGH before 18th clock cycle)
• + 25 clock cycles within S# LOW (S# becomes HIGH before 26th clock cycle)
• + 33 clock cycles within S# LOW (S# becomes HIGH before 34th clock cycle)
These sequences cause the controller to set the XIP confirmation bit to 1, thereby termi-
nating XIP. However, it does not reset the device or interrupt PROGRAM/ERASE opera-
tions that may be in progress. After terminating XIP, the controller must execute RESET
ENABLE and RESET MEMORY to implement a software reset and reset the device.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Power-Up and Power-Down

Power-Up and Power-Down

Power-Up and Power-Down Requirements
At power-up and power-down, the device must not be selected; that is, S# must follow
the voltage applied on V CC until V CC reaches the correct values: V CC,min at power-up and
VSS at power-down.
To provide device protection and prevent data corruption and inadvertent WRITE oper-
ations during power-up, a power-on reset circuit is included. The logic inside the device
is held to RESET while V CC is less than the power-on reset threshold voltage shown here;
all operations are disabled, and the device does not respond to any instruction. During
a standard power-up phase, the device ignores all commands except READ STATUS
REGISTER and READ FLAG STATUS REGISTER. These operations can be used to check
the memory internal state. After power-up, the device is in standby power mode; the
write enable latch bit is reset; the write in progress bit is reset; and the dynamic protec-
tion register is configured as: (write lock bit, lock down bit) = (0,0).
Normal precautions must be taken for supply line decoupling to stabilize the V CC sup-
ply. Each device in a system should have the V CC line decoupled by a suitable capacitor
(typically 100nF) close to the package pins. At power-down, when V CC drops from the
operating voltage to below the power-on-reset threshold voltage shown here, all opera-
tions are disabled and the device does not respond to any command.
When the operation is in progress, the program or erase controller bit of the status reg-
ister is set to 0. To obtain the operation status, the flag status register must be polled.
When the operation completes, the program or erase controller bit is cleared to 1. The
cycle is complete after the flag status register outputs the program or erase controller bit
to 1.
Note: If power-down occurs while a WRITE, PROGRAM, or ERASE cycle is in progress,
data corruption may result.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Power-Up and Power-Down

Figure 45: Power-Up Timing

VCC
VCC,max
Chip selection not allowed

VCC,min
Chip tVSL
reset
Polling allowed Device fully accessible
VWI

Extended-SPI protocol
Status register bit 0 = 1
Flag status register bit 7 = 0

Time

Notes: 1. tVSL polling has to be in Extended-SPI protocol and STR mode.

2. During tVSL period, HOLD# is enabled, RESET# disabled, and output strength is in de-
fault setting.
3. In a system that uses a fast VCC ramp rate, current design requires a minimum 100µs af-
ter VCC reaches tVWI, and before the polling is allowed, even though VCC,min is achieved.
4. In extended SPI protocol, the 1Gb/2Gb device must wait 100us after VCC reaches VCC,min
before polling the status register or flag status register.

Table 40: Power-Up Timing and VWI Threshold

Note 1 applies to entire table
Symbol Parameter Typ Max Unit Notes
tVSL VCC,min to device fully accessible – 300 µs 2, 3
VWI Write inhibit voltage 1.0 1.5 V 2

Notes: 1. When VCC reaches VCC,min, to determine whether power-up initialization is complete,
the host can poll status register bit 0 or flag status register bit 7 only in extended SPI
protocol because the device will accept commands only on DQ0 and output data only
on DQ1. When the device is ready, the host has full access using the protocol configured
in the nonvolatile configuration register. If the host cannot poll the status register in x1
SPI mode, it is recommended to wait tVSL before accessing the device.
2. Parameters listed are characterized only.
3. On the first power up after an event causing a sub-sector erase operation interrupt (e.g.
due to power-loss), the maximum time for tVSL will be up to 4.5ms in case of 4KB sub-
sector erase interrupt and up to 36ms in case of 32KB sub-sector erase interrupt; this ac-
counts for erase recovery embedded operation.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Power Loss and Interface Rescue

Power Loss and Interface Rescue

If a power loss occurs during a WRITE NONVOLATILE CONFIGURATION REGISTER
command, after the next power-on, the device might begin in an undetermined state
(XIP mode or an unnecessary protocol). If this occurs, a power loss recovery sequence
must reset the device to a fixed state (extended SPI protocol without XIP) until the next
power-up.
If the controller and memory device get out of synchronization, the controller can fol-
low an interface rescue sequence to reset the memory device interface to power-up to
the last reset state (as defined by latest nonvolatile configuration register). This resets
only the interface, not the entire memory device, and any ongoing operations are not
interrupted.
After each sequence, the issue should be resolved definitively by running the WRITE
NONVOLATILE CONFIGURATION REGISTER command again.
Note: The two steps in each sequence must be in the correct order, and tSHSL2 must be
at least 50ns for the duration of each sequence.
The first step for both the power loss recovery and interface rescue sequences is descri-
bed under "Recovery." The second step in the power loss recovery sequence is under
"Power Loss Recovery" and the second step in the interface rescue sequence is under
"Interface Rescue."

Recovery
Step one of both the power loss recovery and interface rescue sequences is DQ0 (PAD
DATA) and DQ3 (PAD HOLD) equal to 1 for the situations listed here:
• 7 clock cycles within S# LOW (S# becomes HIGH before 8th clock cycle)
• + 9 clock cycles within S# LOW (S# becomes HIGH before 10th clock cycle)
• + 13 clock cycles within S# LOW (S# becomes HIGH before 14th clock cycle)
• + 17 clock cycles within S# LOW (S# becomes HIGH before 18th clock cycle)
• + 25 clock cycles within S# LOW (S# becomes HIGH before 26th clock cycle)
• + 33 clock cycles within S# LOW (S# becomes HIGH before 34th clock cycle)

Power Loss Recovery

For power loss recovery, the second part of the sequence is exiting from dual or quad
SPI protocol by using the following FFh sequence: DQ0 and DQ3 equal to 1 for 8 clock
cycles within S# LOW; S# becomes HIGH before 9th clock cycle. After this two-part se-
quence the extended SPI protocol is active.

Interface Rescue
For interface rescue, the second part of the sequence is for exiting from dual or quad SPI
protocol by using the following FFh sequence: DQ0 and DQ3 equal to 1 for 16 clock cy-
cles within S# LOW; S# becomes HIGH before 17th clock cycle. For DTR protocol, 1
should be driven on both edges of clock for 16 cycles with S# LOW. After this two-part
sequence, the extended SPI protocol is active.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Power Loss and Interface Rescue

Initial delivery status

The device is delivered as the following:
• Memory array erased: all bits are set to 1 (each byte contains FFh)
• Status Register contains 00h (all Status Register bits are 0)
• NonVolatile Configuration Register (NVCR) bits all erased (FFFFh)

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Absolute Ratings and Operating Conditions

Absolute Ratings and Operating Conditions

Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only. Exposure to absolute maximum rating for extended periods may ad-
versely affect reliability. Stressing the device beyond the absolute maximum ratings may
cause permanent damage.

Table 41: Absolute Ratings

Symbol Parameter Min Max Units Notes

TSTG Storage temperature –65 150 °C
TLEAD Lead temperature during soldering – See note 1 °C
VCC Supply voltage –0.6 2.4 V 2
VIO Input/output voltage with respect to ground -0.6 VCC + 0.6 V 2
VESD Electrostatic discharge voltage –2000 2000 V 2, 3
(human body model)

Notes: 1. Compliant with JEDEC Standard J-STD-020C (for small-body, Sn-Pb or Pb assembly),
RoHS, and the European directive on Restrictions on Hazardous Substances (RoHS)
2002/95/EU.
2. All specified voltages are with respect to VSS. During infrequent, nonperiodic transitions,
the voltage potential between VSS and the VCC may undershoot to –2.0V for periods less
than 20ns, or overshoot to VCC,max + 2.0V for periods less than 20ns.
3. JEDEC Standard JESD22-A114A (C1 = 100pF, R1 = 1500Ω, R2 = 500Ω).

Table 42: Operating Conditions

Symbol Parameter Min Max Units

VCC Supply voltage 1.7 2.0 V
TA Ambient operating temperature –40 85 °C

Table 43: Input/Output Capacitance

Note 1 applies to entire table
Symbol Description Test Condition Min Max Units
CIN/OUT Input/output capacitance VOUT = 0V – 10 pF
(DQ0/DQ1/DQ2/DQ3)
CIN Input capacitance (other pins) VIN = 0V – 6 pF
CIN/S# Input capacitance (other pins) VIN = 0V – 10 pF

Note: 1. These parameters are sampled only, not 100% tested. TA = 25°C at 54 MHz.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Absolute Ratings and Operating Conditions

Table 44: AC Timing Input/Output Conditions

Symbol Description Min Max Units Notes

CL Load capacitance - 30 pF 1
– Input rise and fall times – 1.5 ns
Input pulse voltages 0.2VCC to 0.8VCC V 2
Input timing reference voltages 0.3VCC to 0.7VCC V
Output timing reference voltages VCC/2 V

Notes: 1. Output buffers are configurable by user.

2. For quad/dual operations: 0V to VCC.

Figure 46: AC Timing Input/Output Reference Levels

Input levels1 I/O timing

reference levels
0.8VCC
0.7VCC
0.5VCC
0.3VCC
0.2VCC

Note: 1. 0.8VCC = VCC for dual/quad operations; 0.2VCC = 0V for dual/quad operations.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
DC Characteristics and Operating Conditions

DC Characteristics and Operating Conditions

Table 45: DC Current Characteristics and Operating Conditions

Notes apply to entire table.
Parameter Symbol Test Conditions Typ Max Unit
Input leakage current ILI – ±2 µA
Output leakage current ILO – ±2 µA
Standby current ICC1 S# = VCC, VIN = VSS or VCC 20 100 µA
Standby current (automotive) ICC1 S# = VCC, VIN = VSS or VCC 20 200 µA
Deep power-down current ICC2 S# = VCC, VIN = VSS or VCC 2 50 µA
Deep power-down current (automotive) ICC2 S# = VCC, VIN = VSS or VCC 5 100 µA
Operating current (fast-read extended I/O) ICC3 C = 0.1VCC/0.9VCC at 166 MHz, – 20 mA
DQ1 = open
C = 0.1VCC/0.9VCC at 54 MHz, – 8 mA
DQ1 = open
Operating current (fast-read dual I/O) C = 0.1VCC/0.9VCC at 166 MHz, – 25 mA
DQ = open
Operating current (fast-read quad I/O) C = 0.1VCC/0.9VCC at 166 MHz STR – 28 mA
or 80 MHz DTR, DQ = open
C = 0.1VCC/0.9VCC at 90 MHz DTR, – 31 mA
DQ = open
Operating current (PROGRAM operations) ICC4 S# = VCC – 35 mA
Operating current (WRITE operations) ICC5 S# = VCC – 35 mA
Operating current (erase) ICC6 S# = VCC – 35 mA

Notes: 1. All currents are RMS unless noted. Typical values at typical VCC (3.0/1.8V); VIO = 0V/VCC;
TC = +25°C.
2. Standby current is the average current measured over any time interval 5µs after S de-
assertion (and any internal operations are complete).
3. Deep power-down current is the average current measured 5ms over any 5ms time in-
terval, 100µs after the ENTER DEEP POWER-DOWN operation (and any internal opera-
tions are complete).
4. All read currents are the average current measured over any 1KB continuous read. No
load, checker-board pattern.
5. All program currents are the average current measured over any 256-byte typical data
program.

Table 46: DC Voltage Characteristics and Operating Conditions

Parameter Symbol Conditions Min Max Unit

Input low voltage VIL –0.5 0.3VCC V
Input high voltage VIH 0.7VCC VCC + 0.4 V
Output low voltage VOL IOL = 1.6mA – 0.4 V

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
DC Characteristics and Operating Conditions

Table 46: DC Voltage Characteristics and Operating Conditions (Continued)

Parameter Symbol Conditions Min Max Unit

Output high voltage VOH IOH = –100µA VCC - 0.2 – V

Note: 1. VIL can undershoot to –1.0V for periods <2ns and VIH may overshoot to VCC,max + 1.0V
for periods less than 2ns.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
AC Characteristics and Operating Conditions

AC Characteristics and Operating Conditions

Table 47: AC Characteristics and Operating Conditions

Data
Transfer
Parameter Symbol Rate Min Typ Max Unit Notes
Clock frequency for all commands other fC STR DC – 166 MHz
than READ (Extended-SPI, DIO-SPI, and DTR DC – 90
QIO-SPI protocol)
Clock frequency for READ command fR STR DC – 54 MHz
DTR DC – 27
Clock HIGH time tCH STR 2.7 – – ns 2
DTR 5.0 – –
Clock LOW time tCL STR 2.7 – – ns 2
DTR 5.0 – –
Clock rise time (peak-to-peak) tCLCH STR/DTR 0.1 – – V/ns 3, 4
Clock fall time (peak-to-peak) tCHCL STR/DTR 0.1 – – V/ns 3, 4
S# active setup time (relative to clock) tSLCH STR/DTR 2.7 – – ns
S# not active hold time (relative to clock) tCHSL STR/DTR 2.7 – – ns
Data in setup time tDVCH STR/DTR 1.75 – – ns
tDVCL DTR only 1.75 – – ns
Data in hold time tCHDX STR/DTR 2 – – ns
tCLDX DTR only 2.3 – – ns
S# active hold time (relative to clock) tCHSH STR 2.7 – – ns
DTR 5.0 – –
S# active hold time (relative to clock LOW) tCLSH DTR only 3.375 – – ns
Only for writes in DTR
S# not active setup time (relative to clock) tSHCH STR 2.7 – – ns
DTR 5.0 – – ns
S# deselect time after a READ command tSHSL1 STR/DTR 6 – – ns
S# deselect time after a nonREAD com- tSHSL2 STR/DTR 30 – – ns 5
mand
Output disable time tSHQZ STR/DTR – – 6 ns 3
Clock LOW to output valid under 30pF tCLQV STR/DTR – – 6 ns
Clock LOW to output valid under 10pF STR/DTR – – 5 ns
Clock HIGH to output valid under 30pF tCHQV DTR only – – 6 ns
Clock HIGH to output valid under 10pF DTR only – – 5 ns
Output hold time tCLQX STR/DTR 1 – – ns
Output hold time tCHQX DTR only 1 – – ns
HOLD setup time (relative to clock) tHLCH STR/DTR 2.7 – – ns
HOLD hold time (relative to clock) tCHHH STR/DTR 2.7 – – ns
HOLD setup time (relative to clock) tHHCH STR/DTR 2.7 – – ns

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
AC Characteristics and Operating Conditions

Table 47: AC Characteristics and Operating Conditions (Continued)

Data
Transfer
Parameter Symbol Rate Min Typ Max Unit Notes
HOLD hold time (relative to clock) tCHHL STR/DTR 2.7 – – ns
HOLD to output Low-Z tHHQX STR/DTR – – 5 ns 3
HOLD to output High-Z tHLQZ STR/DTR – – 5 ns 3
Write protect setup time tWHSL STR/DTR 20 – – ns 6
Write protect hold time tSHWL STR/DTR 100 – – ns 6
S# HIGH to deep power-down tDP STR/DTR 3 – – us
S# HIGH to standby mode (DPD exit time) tRDP STR/DTR 30 – – us
WRITE STATUS REGISTER cycle time tW STR/DTR – 1.3 8 ms
WRITE NONVOLATILE CONFIGURATION tWNVCR STR/DTR – 0.2 1 s
REGISTER cycle time
Nonvolatile sector lock time tPPBP STR/DTR – 0.1 2.8 ms
Program ASP register tASPP STR/DTR – 0.1 0.5 ms
Program password tPASSP STR/DTR – 0.2 0.8 ms
Erase nonvolatile sector lock array tPPBE STR/DTR – 0.2 1 s
Page program time (256 bytes) tPP STR/DTR – 120 2800 us 7
Page program time (n bytes) – 18+2.5x 2800 us 8
int(n/6)
PROGRAM OTP cycle time (64 bytes) tPOTP STR/DTR – 0.12 0.8 ms
Sector erase time tSE STR/DTR – 0.15 1 s
4KB subsector erase time tSSE STR/DTR – 0.05 0.4 s
32KB subsector erase time tSSE STR/DTR – 0.1 1 s
512Mb bulk erase time tBE STR/DTR – 153 460 s

Notes: 1. Typical values given for TA = 25 °C.

2. tCH + tCL must add up to 1/fC.

3. Value guaranteed by characterization; not 100% tested.

4. Expressed as a slew-rate.
5. nonREAD commands are WRITE,PROGRAM and ERASE.
6. Only applicable as a constraint for a WRITE STATUS REGISTER command when STATUS
REGISTER WRITE is set to 1.
7. Typical value is applied for pattern: 50% "0" and 50% "1".
8. int(n) correspond to the integer part of n, For example int (12/8)=1, int (32/8)=4
int(15.3)=15.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
AC Reset Specifications

AC Reset Specifications

Table 48: AC RESET Conditions

Note 1 applies to entire table
Parameter Symbol Conditions Min Typ Max Unit
Reset pulse tRLRH 2 50 – – ns
width
Reset recovery tRHSL Device deselected (S# HIGH) and is in XIP mode 40 – – ns
time Device deselected (S# HIGH) and is in standby mode 40 – – ns
Commands are being decoded, any READ operations are 40 – – ns
in progress or any WRITE operation to volatile registers
are in progress
Any device array PROGRAM/ERASE/SUSPEND/RESUME, 30 – – µs
PROGRAM OTP, NONVOLATILE SECTOR LOCK, and ERASE
NONVOLATILE SECTOR LOCK ARRAY operations are in
progress
While a WRITE STATUS REGISTER operation is in progress – tW – ms
While a WRITE NONVOLATILE CONFIGURATION REGIS- – tWNVCR – ms
TER operation is in progress
On completion or suspension of a SUBSECTOR ERASE op- – tSSE – s
eration
Device in deep power-down mode – tRDP – ms
While ADVANCED SECTOR PROTECTION PROGRAM oper- – tASPP – ms
ation is in progress
While PASSWORD PROTECTION PROGRAM operation is – tPASSP – ms
in progress
Software reset tSHSL3 Device deselected (S# HIGH) and is in standby mode 40 – – ns
recovery time Any Flash array PROGRAM/ERASE/SUSPEND/RESUME, 30 – – µs
PROGRAM OTP, NONVOLATILE SECTOR LOCK, and ERASE
NONVOLATILE SECTOR LOCK ARRAY operations are in
progress
While WRITE STATUS REGISTER operation is in progress – tW – ms
While a WRITE NONVOLATILE CONFIGURATION REGIS- – tWNVCR – ms
TER operation is in progress
On completion or suspension of a SUBSECTOR ERASE op- – tSSE – s
eration
Device in deep power-down mode – tRDP – ms
While ADVANCED SECTOR PROTECTION PROGRAM oper- – tASPP – ms
ation is in progress
While PASSWORD PROTECTION PROGRAM operation is – tPASSP – ms
in progress
S# deselect to tSHRV Deselect to reset valid in quad output or in QIO-SPI – – 2 ns
reset valid

Notes: 1. Values are guaranteed by characterization; not 100% tested.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
AC Reset Specifications

2. The device reset is possible but not guaranteed if tRLRH < 50ns.

Figure 47: Reset AC Timing During PROGRAM or ERASE Cycle

S#
tSHRH tRHSL

tRLRH

RESET#

Don’t Care

Figure 48: Reset Enable and Reset Memory Timing

0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
C

Reset enable Reset memory

S#

DQ0

Figure 49: Serial Input Timing

tSHSL

S#

tCHSL tSLCH tCHSH tSHCH

C
tCHCL
tDVCH tCHDX tCLCH

DQ0 MSB in LSB in

DQ1 High-Z High-Z

Don’t Care

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
AC Reset Specifications

Figure 50: Write Protect Setup and Hold During WRITE STATUS REGISTER Operation (SRWD = 1)

W#
tWHSL tSHWL

S#

DQ0

DQ1 High-Z High-Z

Don’t Care

Figure 51: Hold Timing

S#

tCHHL tHLCH tHHCH

C
tCHHH
tHLQZ tHHQX

DQ0

DQ1

HOLD#
Don’t Care

Figure 52: Output Timing

S#

tCLQV tCLQV tCL tCH

tCLQX tCLQX tSHQZ

DQ1 LSB out

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Program/Erase Specifications

Program/Erase Specifications

Table 49: Program/Erase Specifications

Parameter Condition Typ Max Units Notes

Erase to suspend Sector erase or erase resume to erase suspend 150 – µs 1
Program to suspend Program resume to program suspend 5 – µs 1
Subsector erase to sus- Subsector erase or subsector erase resume to erase sus- 50 – µs 1
pend pend
Suspend latency Program 7 25 µs 2
Suspend latency Subsector erase 15 30 µs 2
Suspend latency Erase 15 30 µs 3

Notes: 1. Timing is not internally controlled.

2. Any READ command accepted.
3. Any command except the following are accepted: SECTOR, SUBSECTOR, or BULK ERASE;
WRITE STATUS REGISTER; WRITE NONVOLATILE CONFIGURATION REGISTER; and PRO-
GRAM OTP.

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 512Mb, 1.8V Multiple I/O Serial Flash Memory
Revision History

Revision History
Rev. D – 06/16
• Updated Clock Frequencies – DTR (in MHz) table
• Updated maximum DTR frequency to 90 MHz
• Updated tCLDX specification in AC Characteristics and Operating Conditions

Rev. C – 06/16
• Added general purpose read register notes to Command Definitions table

Rev. B – 03/16
• Changed status from preliminary to production

Rev. A – 6/15
• Initial release

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000

www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.

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