Data Sheet, Jun.

2010

C o n t r o l I n t e g r a t e d P Ow e r
System (CIPOS™)

IKCS12F60B2A
IKCS12F60B2C

http://www.lspst.com

For Power Management

Application
CIPOS™ IKCS12F60B2A
IKCS12F60B2C

Revision History: 2010-06 Rev.1.0

Previous Version: Infineon Technologies Data Sheet Ver. 2.2
Page Subjects (major changes since last revision)
No editorial change
Document in format change

Authors: Junho Song*, Junbae Lee* and Daewoong Chung*, W. Frank**, W. Brunnbauer**
LS Power Semitech*, Infineon Technologies**
Edition 2010-01
Published by
LS Power Semitech Co., Ltd.
Seoul, Korea
© LS Power Semitech Co., Ltd.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein
and/or any information regarding the application of the device, LS Power Semitech Co., Ltd. hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest LS Power Semitech Co., Ltd. office or representatives (http://www.lspst.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest LS Power Semitech Co., Ltd. office or representatives.
LS Power Semitech Co., Ltd. components may only be used in life-support devices or systems with
the express written approval LS Power Semitech Co., Ltd., if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect the safety
or effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.

®
TRENCHSTOP is a registered trademark of Infineon Technologies AG.

Data Sheet 2/18 Jun. 2010

CIPOS™ IKCS12F60B2A
IKCS12F60B2C

Table of contents:
CIPOS™ Control Integrated POwer System ................................................................................................. 4
Features ........................................................................................................................................................ 4
Target Applications ..................................................................................................................................... 4
Description ................................................................................................................................................... 4
System Configuration ................................................................................................................................. 4
Certification .................................................................................................................................................. 4
Internal Electrical Schematic ........................................................................................................................... 5
Pin Assignment ................................................................................................................................................. 6
Pin Description ............................................................................................................................................ 6
HIN1,2,3 and /LIN1,2,3 (Low side and high side control pins, Pin 15 - 20) ................................................ 6
TEMP (temperature NTC, Pin 24) ............................................................................................................... 7
ITRIP (Over-current detection function, Pin 21) .......................................................................................... 7
VDD, VSS (control side supply and reference, Pin 22, 23) ......................................................................... 7
VB1,2,3 and VS1,2,3 (High side supplies, Pin 1, 2, 4, 5, 7, 8) .................................................................... 7
VRU, VRV, VRW (low side emitter, Pin 12, 13, 14) .................................................................................... 7
V+ (positive bus input voltage, Pin 10) ........................................................................................................ 7
Absolute Maximum Ratings ............................................................................................................................ 8
Module Section ............................................................................................................................................ 8
IGBT and Diode Section .............................................................................................................................. 8
Control Section ............................................................................................................................................ 9
Recommended Operation Conditions ............................................................................................................ 9
Static Characteristics ..................................................................................................................................... 10
Dynamic Characteristics ................................................................................................................................ 10
Integrated Components ................................................................................................................................. 11
Characteristics ................................................................................................................................................ 13
Package Outline IKCS12F60B2A................................................................................................................... 17
Package Outline IKCS12F60B2C ................................................................................................................... 18
Package data ................................................................................................................................................... 18

Data Sheet 3/18 Jun. 2010

CIPOS™ IKCS12F60B2A
IKCS12F60B2C

CIPOS™
Control Integrated POwer System
Single In-Line Intelligent Power Module
3Φ-bridge 600V / 12A @ 25°C

Features Description
• Fully isolated Single In-Line molded module The CIPOS™ module family offers the chance for
integrating various power and control components
• TrenchStop IGBTs with lowest VCE(sat)
®
to increase reliability, optimize PCB size and
• Optimal adapted antiparallel diode for low EMI system costs.
• Integrated bootstrap diode and capacitor This SIL-IPM is designed to control AC motors in
• Rugged SOI gate driver technology with variable speed drives for applications like air
stability against transient and negative voltage conditioning, compressors and washing machines.
The package concept is specially adapted to
• Fully compliant to 3.3V and 5V microcontrollers
power applications, which need extremely good
• Temperature sense thermal conduction and electrical isolation, but
• Under voltage lockout at all channels also EMI-save control and overload protection.
®
The features of TrenchStop IGBTs and
• Matched propagation delay for all channels
antiparallel diodes are combined with a new
• Low side emitter pins accessible for all phase optimized Infineon SOI gate driver for excellent
current monitoring (open emitter) electrical performance.
• Cross-conduction prevention System Configuration
• Lead-free terminal plating; RoHS compliant
• 3 half-bridges with TrenchStop IGBT & FW-
®
• Qualified
1
according to JEDEC (high diodes
temperature stress tests for 1000h) for target
• 3Φ SOI gate driver
applications
• Bootstrap diodes for high side supply
Target Applications • Integrated 100nF bootstrap capacitance
• Washing machines • Temperature sensor, passive components for
adaptions
• Consumer Fans and Consumer Compressors
• Isolated heatsink
• Creepage distance typ 3.2mm

Certification
UL 1577 (UL file E314539)

1
J-STD-020 and JESD-022
Data Sheet 4/18 Jun. 2010
CIPOS™ IKCS12F60B2A
IKCS12F60B2C

Internal Electrical Schematic

V+ (10)
Tr1, U-HS Tr3, V-HS Tr5, W-HS
D1 D3 D5

Cge = 390 pF Cge1 Cge3 Cge5

Tr2, U-LS Tr4, V-LS Tr6, W-LS

D2 D4 D6

Cge2 Cge4 Cge6

VRU (12)
VRV (13)
VRW (14)

U, VS1 (8)
V, VS2 (5)
W, VS3 (2)

RH1 RL1 RH2 RL2 RH3 RL3

VB3 (1)
VB2 (4)
VB1 (7)
CbsH1 CbsH2 CbsH3
Dbs1-

Dbs3
HO1

LO1

VB1

VS1

LO2

VB2

VS2

LO3

VB3

VS3
HO2

HO3

Rbs

VDD (22) VCC

/HIN1 (15) /HIN1 Driver-IC

/HIN2 (16) /HIN2
/HIN3 (17) /HIN3

/LIN1 (18) /LIN1

/FAULT
ITRIP

/LIN2 (19)
RCIN

/LIN2
Com
VSS
EN

/LIN3 (20) /LIN3

R2-R8
ITRIP (21)
R1 RTS

TEMP (24)
Dz C2
C1
VSS (23)

Figure 1: Internal Schematic

Data Sheet 5/18 Jun. 2010

CIPOS™ IKCS12F60B2A
IKCS12F60B2C

Pin Assignment
Pin Number Pin Name Pin Description
1 VB3 high side floating IC supply voltage
2 W,VS3 motor output W, high side floating IC supply offset voltage
3 n.a. None
4 VB2 high side floating IC supply voltage
5 V,VS2 motor output V, high side floating IC supply offset voltage
6 n.a. None
7 VB1 high side floating IC supply voltage
8 U,VS1 motor output U, high side floating IC supply offset voltage
9 n.a. None
10 V+ positive bus input voltage
11 n.a. None
12 VRU low side emitter
13 VRV low side emitter
14 VRW low side emitter
15 /HIN1 input gate driver high side 1/U
16 /HIN2 input gate driver high side 2/V
17 /HIN3 input gate driver high side 3/W
18 /LIN1 input gate driver low side 1/U
19 /LIN2 input gate driver low side 2/V
20 /LIN3 input gate driver low side 3/W
21 ITRIP input overcurrent shutdown
22 VDD module control supply
23 VSS module negative supply
24 TEMP temperature monitoring

Pin Description such to guarantee LSTTL and CMOS compatibility

down to 3.3V controller outputs. The maximum
/HIN1,2,3 and /LIN1,2,3 (Low side and high side voltage at these pins is 5.5V and therefore fully
control pins, Pin 15 - 20) compliant to 3.3V-microcontrollers. Pull-up
These pins are active low and they are resistor of about 75kΩ is internally provided to
responsible for the control of the integrated IGBT pre-bias inputs during supply start-up and a zener
clamp is provided for pin protection purposes.
Input schmitt-trigger and noise filter provide
VDD
VIH; VIL beneficial noise rejection to short input pulses.
INPUT
HINx NOISE It is recommended for proper work of CIPOS™
LINx FILTER not to provide an input pulse-width and PWM
VZ=3.3V
deadtimes lower than 1us.
The integrated gate drive provides additionally a
shoot through prevention capability which avoids
Figure 2: Input pin structure
the simultaneous on-state of two gate drivers of
The Schmitt-trigger input threshold of them are

Data Sheet 6/18 Jun. 2010

CIPOS™ IKCS12F60B2A
IKCS12F60B2C

the same leg (i.e. HO1 and LO1, HO2 and LO2, Due to the low power consumption, the floating
HO3 and LO3). driver stage is supplied by an integrated bootstrap
circuit connected to VDD. This includes also
A minimum deadtime insertion of typ 380ns is also
integrated bootstrap capacitors of 100 nF at each
provided, in order to reduce cross-conduction of
floating supply, which are located very close to the
the external power switches.
gate drive circuit.
TEMP (temperature NTC, Pin 24) The under-voltage detection operates with a rising
The TEMP terminal provides direct access to the supply threshold of typical VBSUV+ = 12.1V and a
NTC, which is referenced to VSS. An external falling threshold of VDDUV- = 10.4 V according to
pull-up resistor connected to +5V ensures, that Figure 4.
the resulting voltage can be directly connected to
the microcontroller. VS1,2,3 provide a high robustness against
negative voltage in respect of VSS of -50V. This
ensures very stable designs even under rough
RNTC conditions.
TEMP Stand Normal UVLO
by Operation VDDmax, VBSmax

VSS VDDUV+, VBSUV+

CIPOS™ vDD VDDUV-, VBSUV-

Figure 3: Internal circuit at pin TEMP t

ITRIP (Over-current detection function, Pin 21) Figure 4: Operation modes

CIPOS™ provides an over-current detection
function by connecting the ITRIP input with the VRU, VRV, VRW (low side emitter, Pin 12, 13,
motor current feedback. The ITRIP comparator 14)
threshold (typ 0.46V) is referenced to VSS ground. The low side emitters are available for current
A input noise filter (typ: tITRIPMIN = 225ns) prevents measurements of each phase leg. It is
the driver to detect false over-current events. recommended to keep the connection to pin VSS
as short as possible in order to avoid unnecessary
Over-current detection generates a hard shut
inductive voltage drops.
down of all outputs of the gate driver after the
shutdown propagation delay of typically 900ns. V+ (positive bus input voltage, Pin 10)
The fault-clear time is set to typically to 4.7ms. The high side IGBT are connected to the bus
voltage. It is recommended, that the bus voltage
VDD, VSS (control side supply and reference, does not exceed 500V.
Pin 22, 23)
VDD is the low side supply and it provides power
both to input logic and to low side output power
stage. Input logic is referenced to VSS ground as
well as the under-voltage detection circuit.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1V is at least
present.
The IC shuts down all the gate drivers power
outputs, when the VDD supply voltage is below
VDDUV- = 10.4V. This prevents the external power
switches from critically low gate voltage levels
during on-state and therefore from excessive
power dissipation.

VB1,2,3 and VS1,2,3 (High side supplies, Pin 1,

2, 4, 5, 7, 8)
VB to VS is the high side supply voltage. The high
side circuit can float with respect to VSS following
the external high side power device emitter/source
voltage.

Data Sheet 7/18 Jun. 2010

CIPOS™ IKCS12F60B2A
IKCS12F60B2C

Absolute Maximum Ratings

(TJ = 25°C, VDD = 15V Unless Otherwise Specified):

Module Section

Description Condition Symbol Value Unit

Min max
Storage temperature range Tstg -40 125 °C
1
Operating temperature control PCB TPCB - 125 °C
Wave soldering,
Solder temperature 1.6mm (0.063in.) Tsol - 260 °C
from case for 10s
RMS, f=50Hz, t
Insulation test voltage VISOL 2500 - V
=1min

Mounting torque M3 screw and washer MS - 0.6 Nm

Package flat on
Mounting pressure on surface NMC - 150 N/mm²
mounting surface

Creepage distance dS 3.1 - mm

Max. peak power of bootstrap tp = 100µs

PBRpeak 90 W
resistor Tc= 100°C

IGBT and Diode Section

Description Condition Symbol Value Unit

min max
Max. Blocking Voltage VCES 600 - V
Tc = 25°C,TvJ <150°C -12 12
DC output current Iu, Iv, Iw A
Tc = 80°C,TvJ <150°C -6 6
Repetitive peak collector current tp limited by TvJmax Iu, Iv, Iw -18 18 A

2 VDD = 15V,VDC = 400V,

Short circuit withstand time tsc - 5 µs
TvJ = 150°C
VDD = 15V,VDC ≤ 500V,
IGBT reverse bias safe operating
TvJ = 150°C, IC = 6A Full Square
area (RBSOA)
VCEmax = 600V

Power dissipation per IGBT Tc = 25°C Ptot - 35 W

IGBT TvjI -40 150
Operating junction temperature range °C
Diode TvjD -40 150

1
Monitored by pin 24
2
Allowed number of short circuits: <1000; time between short circuits: >1s.

Data Sheet 8/18 Jun. 2010

CIPOS™ IKCS12F60B2A
IKCS12F60B2C

Description Condition Symbol Value Unit

min max
Single IGBT thermal resistance,
RthJC - 3.0
junction-case
K/W
Single diode thermal resistance,
RthJCD - 4.2
junction-case

Control Section

Description Condition Symbol Value Unit

min max
Module supply voltage VDD -1 20
High side floating supply voltage
VBS -1 20
(VB vs. VS)
High side floating IC supply offset VDD-VBS-6 V
VS1,2,3 600
voltage tp < 500ns VDD-VBS-50
Input voltage /LIN, /HIN floating VIN -1 5.5
Input voltage ITRIP VinITRIP -1 10
1
Operating junction temperature TJ,IC - 125 °C
Max. switching frequency fPWM - 20 kHz

Recommended Operation Conditions

All voltages are absolute voltages referenced to VSS -Potential unless otherwise specified.

Description Symbol Value Unit

min max

High side floating supply offset voltage VS -3 500

High side floating supply voltage (VB vs. VS) VBS 12.5 17.5
V
Low side power supply VDD 12.5 17.5
Logic input voltages LIN, HIN, ITRIP VIN 0 5

1
Monitored by pin 24
Data Sheet 9/18 Jun. 2010
CIPOS™ IKCS12F60B2A
IKCS12F60B2C

Static Characteristics
(Tc = 25°C, VDD = 15V, if not stated otherwise)
Description Condition Symbol Value Unit

min typ max

Collector-Emitter breakdown
VIN = 5V, IC = 0.25mA V(BR)CES 600 - - V
voltage
VDD = 15V, Iout = +/- 6A
Collector-Emitter saturation voltage TvJ = 25°C VCE(sat) - 1.6 2.1 V
TvJ = 150°C - 1.8

VIN = 5V, Iout = +/- 6A

Diode forward voltage TvJ = 25°C VF - 1.65
2.05 V
TvJ = 150°C - 1.6

VCE = 600V, VGE = 5V

Zero gate voltage collector current
TvJ = 25°C ICES - - 40 µA
of IGBT
TvJ = 150°C - - 1000
1 VDD = 15V, tSC ≤ 5µs 2
Short circuit collector current IC(SC) - 40 - A
VCC = 300V, Tj = 150°C
Logic "0" input voltage (LIN,HIN) VIH 1.7 2.1 2.4 V
Logic "1" input voltage (LIN,HIN) VIL 0.7 0.9 1.1 V
ITRIP positive going threshold VIT,TH+ 360 460 540 mV
ITRIP input hysteresis VIT,HYS 45 75 - mV
VDD and VBS supply under voltage VDDUV+
2 11.0 12.1 12.8 V
positive going threshold VBSUV+
VDD and VBS supply under voltage VDDUV-
2 9.5 10.4 11 V
negative going threshold VBSUV-
VCC and VBS supply under voltage VDDUVH
2 1.2 1.7 - V
lockout hysteresis VBSUVH
Input clamp voltage (/HIN, /LIN) IIN = 4mA VINCLAMP 9.0 10.4 13.0 V
Input clamp voltage (ITRIP) IIN = 4mA VINCLAMP2 9.0 10.6 13.0 V
Quiescent VBx supply current (VBx
VIN = low IQB - 300 550 µA
only)
Quiescent VDD supply current
VIN = float IQDD - 2.4 3.4 mA
(VDD only)
Input bias current VIN = 5V IIN+ - 55 100 µA

Input bias current VIN = 0V IIN- - 220 400 µA

ITRIP Input bias current VITRIP = 5V IITRIP+ - 75 120 µA

2
Leakage current of high side Tj,IC = 125°C ILVS - 30 - µA

Dynamic Characteristics

1
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Test is not subject of product test, verified by characterisation
Data Sheet 10/18 Jun. 2010
CIPOS™ IKCS12F60B2A
IKCS12F60B2C

(Tc = 25°C, VDD = 15V, if not stated otherwise)

Description Condition Symbol Value Unit

min typ max

Turn-on propagation delay VLIN,HIN = 0V; Iout = 6A,
td(on) - 638 -
High side or low side VDC = 300V
Turn-on rise time VLIN,HIN = 5V Iout = 6A,
tr - 22 -
High side or low side VDC = 300V
Turn-off propagation delay VLIN,HIN = 5V; Iout = 6A,
td(off) - 812 -
High side or low side VDC = 300V
Turn-off fall time VLIN,HIN = 0V Iout = 6A,
tf - 30 -
High side or low side VDC = 300V
ns
Shutdown propagation delay ITRIP VITRIP = 1V, Iu, Iv, Iw = 6A tITRIP - 900 -
Input filter time ITRIP VITRIP = 1V tITRIPmin 155 210 380
Input filter time at LIN for turn on
and off and input filter time at HIN VLIN,HIN = 0 V & 5V tFILIN 120 270 -
for turn on only
Input filter time at HIN for turn off VHIN = 5V tFILIN1 - 220 -
Input filter time at HIN for turn off VHIN = 5 V tFILIN2 - 400 -
VLIN,HIN = 0 V & 5V
Fault clear time after ITRIP-fault tFLTCLR - 4.7 - ms
VITRIP = 0 V
Min. deadtime between low side
DTPWM - 1 - µs
and high side
Deadtime of gate drive circuit DTIC - 380 - ns
Iout = 6A, VDC = 300V
IGBT Turn-on Energy (includes
TvJ = 25°C Eon - 138 -
reverse recovery of diode)
TvJ = 150°C - 188 -
Iout = 6A, VDC = 300V
IGBT Turn-off Energy TvJ = 25°C Eoff - 117 - µJ
TvJ = 150°C - 151 -
Iout = 6A, VDC = 300V
Diode recovery Energy TvJ = 25°C Erec - 33 -
TvJ = 150°C - 84 -

Integrated Components

Data Sheet 11/18 Jun. 2010

CIPOS™ IKCS12F60B2A
IKCS12F60B2C

1
Description Condition Symbol Value Unit

min typ max

Resistor Rbs - 10 - Ω

Resistor TNTC = 25°C RTS - 100 - kΩ

B-Constant of NTC (Negative
TNTC = 25°C B25 - 4250 - K
Temperature Coefficient)
Bootstrap diode forward voltage IFDbs = 100mA VFDbs - 1.9 2.05 V

Capacitor C1 - 100 -

Capacitor Cgex 0.39 nF

Bootstrap Capacitor CbsHx - 100 -

1
Symbols according to Figure 1
Data Sheet 12/18 Jun. 2010
 CIPOS™ IKCS12F60B2A
IKCS12F60B2C

Characteristics
(Tc = 25°C, VDD = 15V, if not stated otherwise)

15A 15A
25℃
IC, COLLECTOR CURRENT

12A 125 ℃

IF, forward CURRENT

12A
150 ℃

9A 9A

6A 6A
25℃
125 ℃
3A 3A
150 ℃

0A 0A
0V 1V 2V 3V 0V 1V 2V
VCE, COLLECTOR EMITTER VOLTAGE VF FORWARD VOLTAGE
Figure 4. Typical IGBT output characteristic Figure 5. Typical diode forward current as a
(VDD = 15V) function of forward voltage

td(off) td(off)
1000ns 1000ns

td(on) td(on)
t, SWITCHING TIMES

t, SWITCHING TIMES

tr
100ns
100ns

tf tf

10ns
tr

10ns
25℃ 50℃ 75℃ 100 ℃ 125 ℃
0A 5A 10A 15A

IC, COLLECTOR CURRENT TvJ, JUNCTION TEMPERATURE

Figure 6. Typical switching times as a Figure 7. Typical switching times as a
function of collector current function of junction temperature
(inductive load, TJ=150°C, (inductive load, VCE = 300V,
VCE = 300V, VDD = 15V VDD = 15V, IC = 6A
Dynamic test circuit in Figure A) Dynamic test circuit in Figure A)

Data Sheet 13/18 Jun. 2010

 CIPOS™ IKCS12F60B2A
IKCS12F60B2C

Eon
1.25mJ Eon
0.15mJ
E, SWITCHING ENERGY

E, SWITCHING ENERGY
Eoff
1.00mJ

0.10mJ
0.75mJ

0.50mJ Eoff Erec

0.05mJ

0.25mJ
Erec

0.00mJ
0.00mJ
0A 5A 10A 15A 25℃ 50℃ 75℃ 100 ℃ 125 ℃

IC, COLLECTOR CURRENT TvJ, JUNCTION TEMPERATURE

Figure 8. Typical switching energy losses Figure 9. Typical switching energy losses as
as a function of collector current a function of junction temperature
(inductive load, TvJ = 150°C, (inductive load, VCE = 300V,
VCE = 300V, VDD = 15V VDD = 15V, IC = 6A
Dynamic test circuit in Figure A) Dynamic test circuit in Figure A)

Single Pulse
ZthJC, TRANSIENT THERMAL RESISTANCE

1000kOhm
IGBT
Diode
100K/W
RTS, NTC resistance

100kOhm

10kOhm 10-1K/W

min
typ
1kOhm max
-2
10 K/W
-25 ℃ 0℃ 25℃ 50℃ 75℃ 100 ℃ -6
10 s
-5
10 s
-4
10 s
-3
10 s
-2
10 s
-1
10 s
TNTC, NTC TEMPERATURE tP, PULSE WIDTH
Figure 10. Characteristic of NTC as a Figure 11. Transient thermal impedance as a
function of NTC temperature function of pulse width
(D=tP/T)

Data Sheet 14/18 Jun. 2010

CIPOS™ IKCS12F60B2A
IKCS12F60B2C

Test Circuits and Parameter Definition

IF t Erec

Erec = ∫ vD ⋅i F dt
0

tErec

25% VR

IRRM 90%

Figure A: Dynamic test circuit Figure B: Definition of diodes switching characteristics

Leakage inductance Lσ =180nH
Stray capacitance C σ =39pF

VEN 1V V

90%
tEN
IIGBT

Figure C: Definition of Enable propagation delay

LIN1,2,3
HIN1,2,3 2.1V
0.9V

td(off) tf td(on) tr

iCU, iCV, iCW 90% 90%

vCEU, vCEV, vCEW 10% 10% 10% 2%

tEoff 2% tEon
t Eoff
t Eon
Eoff = ∫v
0
CEx ⋅i Cx dt Eon = ∫ vCEx ⋅i Cx dt
0

Figure D: Switching times definition and switching energy definition

Data Sheet 15/18 Jun. 2010

CIPOS™ IKCS12F60B2A
IKCS12F60B2C

tFILIN tFILIN

LIN on HIN off on off

LIN

high
HO
LO
LO low
tFILIN2
tFILIN1
toff,HINx
HIN
toff,HINx < tFILIN1

high
HO

HIN toff,HINx
tFILIN1 < toff,HINx < tFILIN2

HO

HIN toff,HINx

toff,HINx > tFILIN2

HO

Figure E: Short Pulse suppression

Data Sheet 16/18 Jun. 2010

CIPOS™ IKCS12F60B2A
IKCS12F60B2C

Package Outline IKCS12F60B2A

Note: There may occur discolorations on the copper surface without any effect of the thermal properties.

Data Sheet 17/18 Jun. 2010

CIPOS™ IKCS12F60B2A
IKCS12F60B2C

Package Outline IKCS12F60B2C

Package data
Description Condition Symbol Value Unit

min typ max

Weight mP - 17 - g
Note: There may occur discolorations on the copper surface without any effect of the thermal properties.
Data Sheet 18/18 Jun. 2010
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Infineon:
IKCS12F60B2C IKCS12F60B2A