INSTRUCTION MANUAL ‘FOR AMPLITUDE MODULATION AND DEMODULATION MODEL NO. : ME 741 ‘Mars’ made Amplitude modulation & demodulation apparatus has been designed zo study the Amplitude modulation & Demodulation. Tocalculate the Modulation Index Side Band Frequency. instrument comprises of the following built in parts: Fixed output DC regulated power supply of +12 Volts. = Builtin carrier sine wave generator of 450KHz frequency. 2.5 Vpp approx.amplitude. Built in audio frequency generator ot 1KHz, 2Vpp approx.amplitude. Circutt diagrams for modulator & demodulator are printed on the front panel & componen's are soldered behind the front panel: THEORY Modulation is the process in which some. property of high frequency wave, also called es zatier wave ale, is altered in such way by low frequency information signal, called as modulating save wm, to tranmitt from one place to other place through air. In double sideband amplitude “wéulation the amplitude of carrier wave is altered by modulating wave such to form an envelope son the carrier on both sides. A non linear element is used to perform the high level modulation 2162 linear element for low level modulation. Properly biased transistor provide linear/non linear operation with some amplification. The AM wave is represented as shown in fig.3 and its sidebands 25 shown in fig.4. The top envelope is represented as Vc+Vm sin amt, Where the bottom envelope is represented as (Vc +Vm sin aimt,) Where Vc is the carrier voltage, Vm is the modulating voltage. It is shown that forming of envelops depends upon the term Vc+Vm, where Vc is kept constant hence the envelope height depends upon Vm only. The ratio between envelope amplitudes is called as modulation index or factor mf, which is represented as min/2 mint? ( Vmux+Calaaating mf with 100 gives percentage modulation m%, which chould never>100, The power radiated in a given load is rel: ted in to terms, one the carrier power Pe and the other is modilated carrier power Pm. The difference of two sideband power Ps which is equal to Pusb+Pisb. The Pmis related with Pe as | i Pome Pe 2 THEORY OF OPERATION | For Amplitude Modulation | Figuret that shows the interral circuit of the chip. We see that the carrier signalis eppied topins 8 and 10 in a common modd to a set of cross coupled clfferential amplfiers(Q1 with Q4 andQ2 wih), Transistor Q7 and QB serve s the constant curent generator forthe differential amplifiers, wheras the bias voltage applied to pin 5 determines the amount of current through the ampifiers. The resistor connected td pins 2 and 3 sets the madulator gain with a smaller resistor resuting inhigher gain, The DC voltage difference between pins 1 and 4 will balance the differential ampliers for complete carrier regection by equalizing the current in each differential amplifier. When the message signalis applied to pins 1 and 4, transistor Q5 and Q6 will alternately increase(or decrease) the current through their associated amplifier to output the sum and difference frequencies inthe side band pair. The output is taken pin 6 for the modulator. 4 “VDC 3, 12 Output, faa [10 Carter ae ° Fo carrierin Ousput 2 Page 2/5 DOC; 741=MODULATION OF AM WAVE! There are many vec demodulate the amplitude modulated waves. In present F board{envelope detection) linear diode demodulation circuitry is provided. In linear diode detector circus, diode presents a low ohmi¢ path to Input signal in one direction only. For this reason changes in the peak current through the diode will remain confined to straight portion of Volt- "ampere characteristics of the diode: In other words it can be said that it acts as half wave rectifier circuit, Detected envelope has als¢ half rectified carrier wave components. When carrier is presented only the average current avg will pass through the diode and has a constant amplitude + output When modulated wave is at|the input the current 1peak varies through diode and RL, E hence produce top portion of the envelope. Addition of C in parallel to RL forms a low pass fiterto | remove these HF components(in actual practice pye fiters are employed), The maximum time - constants kept max equal to RL C+1/afealm | The detection efficiency of diode detector is calculated from the input modulated signal © power, or by mean of modulation depth and detected output as : E B= average potential across RL/peak input signal voltage F Themaximum detection effiediency lies between 80-90%, and upto 60-70% of modulation index. \ | \ : | | Fig. 2 EXPERIMENTAL PROCEDURE For modulation | 4. Connect the carrier OSC output to carrler input. 2 Connect AF lon outputo AF signal input ' 3 connect CRO chennel A with the Amplitude Modulation output sockets, 4 Conneet the CRO ehanne! B with the AF signal output sockets. 5 Keep the Amplitudgi¢ontrol at minimum position, 6 ‘Switch on the instrfent using on/off toggle switch, Page 3/5 DOC: 7411. 42. {Adjust CRO time base for 200us/DV and vert gain at 1V/Div a band will appear upon the ‘screen. Position it at the center of the screen. Connect the resistance box across tho modulated output sockets in parallel with CRO leads measure the signal in Vpp. "Feed one Volt p-p AF signal to the AF input. Trace out the pattern of the modulated wave and measure amplitudes in Vpp a8 shown in fig.4 Increase AF input to successive levels and note amplitude A and B, for each increment . Calculate modulation factor for each input. Draw a plot between input signal(AF) modulation factor. The curve of the graph show the modulation process, Increase maximum AF signal, to observe the distorted wave form since cut-off and saturation of the transistor Q5, Calculate peak power as 2PC=VPPHIRL and modulated power 2Pm=VA*/RL, where AV is the pp amplitude traced from modulated envelope. Find out the power in side bands 2s p side bands=Pm.PC. | Plot side bands spectrum measuring AF and carrier signal frequencies. ‘Trigger CRO with input signal (For external triggering) Note: If resistance box and resistor is not available then modulated output may be terminated in provided RL=10K in demodulator circuit as shown below. OA79 /RL10K Fig.3 Ve +Vmsinomt AB Modulation . lation depth = AB \ te. fern Fraquoncy spectrum of amplitude modulated wavaform Page 4/5 DOC; 741 Fig.4¢XPERIMENT PROCEDURE For demodulation 4 Connect the Amy 2 Connect the GRO chennel A wit ide modulation circuit output to the input of Amp. demodulation circuit. 1@ amplitude demodulated output. Remain C out of circuit and no RL Should be connected across modulated output sockets. ‘then the output is as shown in fig. (i). Connect GRO chennel B with the AF modulated signal output. Connect C in the circuit and note ifs effect upon the RF components as shown in fig.5ili) Bo Feed AF signal for different modulation factor and note the amplitude of demodulated cutput voltage in p-p, and input voltage as Vp=Vpp/2 or Als. Piota response curve between oultput voltage and Vp input. Select the linear part of the curve and calculate the efficiency of the detector as, ‘ B=Slope of the curve as shown in fig 5«ip Envelope } Carrier__, components Demodulated signal without C Fig 5() FigS@i) Output waveform with © { Detector output Output volt, distort a x 4 7A Max I eee | 7 | effiecien | Dra ait Via Different waveforms at demodulator and its response curve > Peak input voltage Fig ii) STANDARD ACCESSORIES 4. 2mm patch cords forinterconnections. 2. Instruction manual. OPTIONAL ACCESSORIES