POWER ELECTRONICS.

DIODES

P- N JUNCTION
1. The p-region has a greater concentration of __________ as
compared to the n-region in a P-N junction.
a) holes
b) electrons
c) both holes & electrons
d) phonons
View Answer
Answer: a
Explanation: Holes are the majority charge carriers in p-type material.
2. A p-type semiconductor material is doped with ____________
impurities whereas a n-type semiconductor material is doped with
__________ impurities
a) acceptor, donor
b) acceptor, acceptor
c) donor, donor
d) donor, acceptor
View Answer
Answer: a
Explanation: Donor impurities denote an electron to the n-type
material making it a electron majority carrier & vice-versa.
3. In the p & n regions of the p-n junction the _________ & the
___________ are the majority charge carriers respectively.
a) holes, holes
b) electrons, electrons
c) holes, electrons
d) electrons, holes
View Answer
Answer: c
Explanation: Holes are the majority charge carriers in p-type material
& vice-versa.
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4. The n-region has a greater concentration of _________ as
compared to the p-region in a P-N junction diode.
a) holes
b) electrons
c) both holes & electrons
d) phonons
View Answer
Answer: b
Explanation: Electrons are the majority charge carriers in n-type
material.
5. Which of the below mentioned statements is false regarding a p-n
junction diode?
a) Diode are uncontrolled devices
b) Diodes are rectifying devices
c) Diodes are unidirectional devices
d) Diodes have three terminals
View Answer
Answer: d
Explanation: Diode is a two terminal device, anode & cathode are
the two terminals.
6. In the p & n regions of the p-n junction the _________ & the
___________ are the minority charge carriers respectively.
a) holes, holes
b) electrons, electrons
c) holes, electrons
d) electrons, holes
View Answer
Answer: d
Explanation: Holes are the minority charge carriers in n-type material
& vice-versa.
7. Lets assume that the doping density in the p-region is 10-9 cm-3 & in
the n-region is 10-17cm-3, as such the p-n junction so formed would be
termed as a
a) p– n–
b) p+ n–
c) p– n+
d) p+ n+
View Answer
Answer: b
Explanation: Doping density is greater in the p-region compared to
the n-region.
8. When a physical contact between a p-region & n-region is
established which of the following is most likely to take place?
a) Electrons from N-region diffuse to P-region
b) Holes from P-region diffuse to N-region
c) Both of the above mentioned statements are true
d) Nothing will happen
View Answer
Answer: c
Explanation: When p & n region come together diffusion takes
places & a depletion region is established with opposite charges
on both the sides of the junction.
9. Which of the following is true in case of an unbiased p-n junction
diode?
a) Diffusion does not take place
b) Diffusion of electrons & holes goes on infinitely
c) There is zero electrical potential across the junctions
d) Charges establish an electric field across the junctions
View Answer
Answer: d
Explanation: A potential difference is established across the
junctions due to recombination of holes & electrons. This growing
filed (barrier potential) stops the further diffusion.
10. Which of the following is true in case of a forward biased p-n
junction diode?
a) The positive terminal of the battery sucks electrons from the p-
region
b) The positive terminal of the battery injects electrons into the p-
region
c) The negative terminal of the battery sucks electrons from the p-
region
d) None of the above mentioned statements are true
View Answer
Answer: a
Explanation: The diode is forward biased, positive is connected to p
& vice-versa, as such batter provides EMF to drive electrons from n-
region to p-region.
POWER DIODE 1
1. An ideal power diode must have
a) low forward current carrying capacity
b) large reverse breakdown voltage
c) high ohmic junction resistance
d) high reverse recovery time
View Answer
Answer: b
Explanation: Large reverse breakdown voltage is desirable
whereas others will increases the losses.
2. To make a signal diode suitable for high current & high voltage
carrying applications with minimum losses, ________
a) a lightly doped n layer is grown between the two p & n layers
b) a heavily doped n layer is grown between the two p & n layers
c) a lightly doped p layer is grown between the two p & n layers
d) a heavily doped p layer is grown between the two p & n layers
View Answer
Answer: a
Explanation: The above process simply the one used to manufacture
power diodes.
3. Power diode is __________
a) a three terminal semiconductor device
b) a two terminal semiconductor device
c) a four terminal semiconductor device
d) a three terminal analog device
View Answer
Answer: b
Explanation: It has two terminals anode and cathode same as that
of a ordinary diode. In fact, a power diode is nothing but a signal
diode with a extra layer.
4. The V-I Characteristics of the diode lie in the (DOUBT)
a) 1st & 2nd quadrant
b) 1st & 3rd quadrant
c) 1st & 4th quadrant
d) Only in the 1st quadrant
View Answer
Answer: b
Explanation: First in the forward region & Third in the reverse biased
mode.
5. Which of the following is true in case of a power diode with R
load?
a) I grows almost linearly with V
b) I decays almost linearly with V
c) I is independent of V
d) I initial grows than decays
View Answer
Answer: a
Explanation: R load therefore V and I are linear and in phase.
6. A diode is said to be reversed biased when the
a) cathode is positive with respect to the anode
b) anode is positive with respect to the cathode
c) cathode is negative with respect to the anode
d) both cathode & anode are negative
View Answer
Answer: a
Explanation: K is positive w.r.t the A when the device is reversed
biased.
7. A diode is said to be forward biased when the
a) cathode is positive with respect to the anode
b) anode is positive with respect to the cathode
c) anode is negative with respect to the anode
d) both cathode & anode are positive
View Answer
Answer: b
Explanation: A is positive w.r.t the K when the device is forward
biased.
8. In case of an ideal power diode, the leakage current flows from
a) anode to cathode
b) cathode to anode
c) in both the directions
d) leakage current does not flow
View Answer
Answer: d
Explanation: Leakage current does not flow in IDEAL diode.
9. The peak inverse current IP for a power diode is given by the
expression
a) IP=t + di/dt
b) IP=t * log ⁡i
c) IP=t * di/dt
d) IP=t * ∫ t*i dt
View Answer
Answer: c
Explanation: The leakage current is the reveres recovery time (t) into
the rate of change of current.
10. A power diode with small softness factor (S-factor) has
a) small oscillatory over voltages
b) large oscillatory over voltages
c) large peak reverse current
d) small peak reverse current
View Answer
Answer: b
Explanation: Peak reverse current is independent of S-factor
smaller the value of S-factor larger the oscillatory over voltage.
POWER DIODES 2
1. If V & I are the forward voltage & current respectively, then the
power loss across the diode would be
a) V/I
b) V2 I2
c) I2 V
d) VI
View Answer
Answer: d
Explanation: Simply power (P) is voltage into current i.e. VI
2. The power loss in which of the following cases would be the
maximum?
a) When both V & I are minimum
b) When both V & I are maximum
c) When only V is maximum
d) When only I is maximum
View Answer
Answer: b
Explanation: P=VI Hence, it would be maximum when both V and I
are maximum.
3. Even after the forward current reduces to zero value, a
practical diode continues to conduct in the reverse direction for a
while due to the
a) resistance of the diode
b) high junction temperature
c) stored charges in the depletion region
d) none of the mentioned
View Answer
Answer: c
Explanation: Due to the stored charges during the earlier current
flow, even when the current reduces to zero due to some
structural properties of the device, the device takes time to sweep
out the stored charges.
4. For a p-n junction diode, the peak inverse current & the reverse
recovery time are dependent on
a) inverse voltage
b) forward Voltage
c) di/dt
d) all of the above mentioned
View Answer
Answer: c
Explanation: It only depends upon the number stored charges
which depends upon the rate of change of current.
5. In an AC-DC converter, a diode might be used as a
a) voltage source
b) phase angle controller
c) freewheeling Diode
d) filter
View Answer
Answer: c
Explanation: In converters diodes are used to feed the energy
back to the load in case of an inductive load.
6. When the p-n junction diode is forward biased, the width of the
depletion region __________
a) increases
b) decreases
c) remains Constant
d) increases than Decreases
View Answer
Answer: b
Explanation: When forward biased depletion layer decreases &
finally it collapses to allow the current flow.
7. When the p-n junction diode is reversed biased, the width of the
depletion region __________
a) increases
b) decreases
c) remains Constant
d) none of the above mentioned
View Answer
Answer: a
Explanation: When reverse biased depletion layer increases until
the breakdown value is reached.
8. In case of a practical p-n junction diode, the rise in the junction
temperature ___________
a) decreases the width of the depletion region
b) increases the barrier potential
c) increases the width of the depletion region
d) width of the depletion region increases but the barrier potential
remains constant
View Answer
Answer: a
Explanation: The rise in temperature excites the charges, which go
& recombine with the charges in the depletion region decreasing
its width. Higher the temperature, lesser is the E.M.F required to
turn on the device.
9. In the equilibrium state, the barrier potential across a unbiased
silicon diode is _________
a) 0.3 V
b) 0.7 V
c) 1.3 V
d) 0 V
View Answer
Answer: b
Explanation: Barrier potential is due to the charges that establish
an electric field across the two junctions.
10. In the equilibrium state the barrier, potential across a unbiased
germanium diode is __________
a) 0.3 V
b) 0.7 V
c) 1.7 V
d) 0 V
View Answer
Answer: a
Explanation: Barrier potential is due to the charges that establish an
electric field across the two junctions.
POWER DIODES TYPE 1
1. Shown below is the diagram of an ideal super diode. When the
input voltage Vin is negative, then the output voltage Vout = ?
a) Vout/Vin
b) Vin
c) 0
d) Vin * Rl
View Answer
Answer: c
Explanation: When the input voltage is negative, there would be a
negative voltage on the diode so it works like an open circuit. Hence
no current flows through the load and Vout is zero.
2. In order to reduce the reverse recovery time of the diodes,
__________ is carried out.
a) shortening of the length of the device
b) platinum & gold doping
c) antimony doping
d) adding an extra silicon layer
View Answer
Answer: b
Explanation: Platinum & gold doping improves the performance of
the devices.
3. Which of the following diodes uses a metal-semiconductor
junction?
a) General purpose diodes
b) Fast recovery diodes
c) Schottky diode
d) None of the mentioned
View Answer
Answer: c
Explanation: Schottky diode uses a Al-Semiconductor junction.
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4. Which of the below mentioned statements is false regarding
Schottky diodes?
a) Schottky diodes have a Al-Silicon junction
b) There is no storage of charges in a Schottky diode
c) The majority charge carriers in a Schottky diode are holes
d) Schottky diodes can be switched off faster than a p-n junction
diode of the same rating
View Answer
Answer: c
Explanation: The majority charge carriers in a Schottky diode are
electrons not holes.
5. A Schottky diode _____
a) has current flow due to holes only
b) has no reverse recovery time
c) has large amount of storage charges
d) has zero cut-in voltage
View Answer
Answer: b
Explanation: Due to the metal-silicon junction there are no stored
charges hence, no reverse recovery time, due to which the switching
is faster.
6. Which of the following are/is the majority charge carriers in a
Schottky diode?
a) Holes
b) Electrons
c) Both holes & Electrons carry equal current
d) None of the mentioned
View Answer
Answer: b
Explanation: The metal has no holes hence major(almost full) current
flows due to the electrons only.
7. In a Schottky diode, the silcon is usually
a) N-type
b) P-type
c) un-doped semiconductor
d) silicon is not used
View Answer
Answer: a
Explanation: Usually only n-type silicon is used because the p-type
has certain limitations.
8. As compared to a p-n junction diode(of the same rating), a
Schottky diode has ___________
a) higher cut-in voltage
b) lower reverse leakage current
c) higher operating frequency
d) higher switching time
View Answer
Answer: c
Explanation: Due to the metal-silicon junction there are no stored
charges, hence no reverse recovery time due to which the switching is
faster.
9. A Schottky diode has __________
a) a gate terminal
b) aluminum-silicon junction
c) platinum gold junction
d) germanium-Arsenide junction
View Answer
Answer: b
Explanation: Schottky diode uses a Al-Semiconductor junction.
10. A Schottky diode can be switchd off much faster than an
equivalent p-n junction diode due to its
a) higher operating frequency
b) no recombination of charges
c) more compact structure
d) None of the mentioned
View Answer
Answer: b
Explanation: Due to the metal-silicon junction there are no stored
charges, hence no reverse recovery time due to which the switching is
faster.
POWER DIODES TYPES 2
1. Ideally the voltage drop across a conducting diode must be
a) ∞
b) 0
c) higher than the forward biased voltage
d) equal to the forward biased voltage
View Answer
Answer: b
Explanation: Ideal conduction = No losses.
2. When reverse breakdown occurs in a diode
a) voltage increases & current is constant
b) voltage increases & current also increases
c) both are constant
d) voltage is constant & current increases
View Answer
Answer: d
Explanation: Recall the I-V curve of a diode in the 3rd quadrant.
3. Schottky diodes are also called as
a) metal diode
b) hot carrier diode
c) signaling diode
d) easy turn on diode
View Answer
Answer: b
Explanation: Due to the metal used to carry the current, it is also
called as a hot carrier diode.
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4. In a Schottky diode, the aluminum metal acts as a __________
a) anode
b) cathode
c) gate
d) common terminal
View Answer
Answer: a
Explanation: The Al (Metal) always acts as the anode.
5. If the doping levels of the semiconductor is increased, then the
width of the depletion layer
a) increases
b) decreases
c) is unchanged
d) keeps oscillating
View Answer
Answer: b
Explanation: Higher the doping, more the number of charge
carrier available to neutralize the opposite charges on the
junction.
6. As compared to a p-n junction device of equal rating, the
Schottky diode has
a) lower reverse voltage rating
b) lower reverse leakage current
c) higher Switching time
d) higher cut-in voltage
View Answer
Answer: a
Explanation: Low reverse voltage rating is the only drawback
against a p-n junction diode.
7. In a Schottky diode, the silicon layer acts as a _____________
a) anode
b) cathode
c) gate
d) common terminal
View Answer
Answer: b
Explanation: The metal acts as the anode and the semiconductor
as a cathode.
8. In a certain power electronics application, it is required that the
voltage at the load terminals is to be kept within a certain range of
voltages only. Among the device listed below, which would be the
most ideal choice for this application?
a) P-n junction diode
b) Schottky diode
c) Zener diode
d) Fast recover diode
View Answer
Answer: c
Explanation: Zener diode is used as a voltage regulating device.
9. Shown below is the diagram of an ideal super diode. When the
input voltage Vin is positive, then the output voltage Vout = ?

a) Vout/Vin
b) Vin
c) 0
d) Vin * Rl
View Answer
Answer: b
Explanation: Input is positive, hence it is amplified by the operational
amplifier which switches the diode on. Current flows through the load
& because of the feedback, the output voltage is equal to the input
voltage.
10. Zener diodes allow a current to flow in the reverse direction, when
the
a) voltage reaches above a certain value
b) temperature reaches above a certain value
c) current always flows in the reverse direction only
d) current cannot flow in the reverse direction
View Answer
Answer: a
Explanation: Zener diode has voltage regulating property. When
voltage reaches above a certain value (Zener voltage), current
starts to flow in the reverse direction.
POWER TRANSISTOR 1
1. Which of the following devices does not belong to the transistor
family?
a) IGBT
b) MOSFET
c) GTO
d) BJT
View Answer
Answer: c
Explanation: GTO is gate turn off transistor, it belongs to the
Thyristor family. All the other devices belong to the transistor
family.
2. A power transistor is a
a) three layer, three junction device
b) three layer, two junction device
c) two layer, one junction device
d) four layer, three junction device
View Answer
Answer: b
Explanation: It has three layers p-n-p or n-p-n forming two p-n
junctions.
3. In a power transistor, ____ is the controlled parameter.
a) VBE
b) VCE
c) IB
d) IC
View Answer
Answer: d
Explanation: The collector current is the controlled parameter.
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4. A power transistor is a _________ device.
a) two terminal, bipolar, voltage controlled
b) two terminal, unipolar, current controlled
c) three terminal, unipolar, voltage controlled
d) three terminal, bipolar, current controlled
View Answer
Answer: d
Explanation: Power transistor is simply many BJT’s connected in
series parallel on a single silicon chip for power applications. It is
a three terminal, bipolar, current controlled device.
5. In a power transistor, _________ is the controlling parameter.
a) VBE
b) VCE
c) IB
d) IC
View Answer
Answer: c
Explanation: The base current controls the collector current.
Hence, the base current Ib is the controlling parameter.
6. In a power transistor, the IB vs VBE curve is
a) a parabolic curve
b) an exponentially decaying curve
c) resembling the diode curve
d) a straight line Y = IB
View Answer
Answer: c
Explanation: The B-E junction of a BJT resembles a p-n junction
diode, hence the curve.
7. For a power transistor, if the base current IB is increased keeping
VCE constant, then
a) IC increases
b) IC decreases
c) IC remains constant
d) none of the mentioned
View Answer
Answer: a
Explanation: Ib is directly proportional to Ic.
8. The forward current gain α is given by
a) IC/IB
b) IC/IE
c) IE/IC
d) IE/IB
View Answer
Answer: b
Explanation: Collector current by emitter current is the current gain,
its value is close to one but never greater than.
9. The value of β is given by the expression
a) IC/IB
b) IC/IE
c) IE/IC
d) IE/IB
View Answer
Answer: a
Explanation: Collector current by the base current is beta, its value is
in the range 50 to 300.
10. A power BJT is used as a power control switch by biasing it in the
cut off region (off state) or in the saturation region (on state). In the
on state
a) both the base-emitter & base-collector junctions are forward biased
b) the base-emitter junction is reverse biased, and the base collector
junction is forward biased
c) the base-emitter junction is forward biased, and the base collector
junction is reversed biased
d) both the base-collector & the base-emitter junctions are reversed
biased
View Answer
Answer: a
Explanation: When base-emitter & base-collector junctions are
forward biased only than both the p-n junctions are forward
biased and the device is on.
EMITTER - BASE COLLECTOR - OPERATING
BASE REGION
F.B R.B ACTIVE
F.B F.B SATURATION(ON)
R.B R.B CUT OFF(OFF)
POWER TRANSISTORS 2
1. For a power transistor, if the forward current gain α = 0.97, then β
=?
a) 0.03
b) 2.03
c) 49.24
d) 32.33
View Answer
Answer: d
Explanation: Use the relation α = β/(β+1).
2. The power electronics devices have a very high efficiency
because
a) cooling is very efficient
b) the devices traverse active region at high speed & stays at the
two states, on and off
c) the devices never operate in active region
d) the devices always operate in the active region
View Answer
Answer: b
Explanation: They are efficient due to their higher transition
speeds.
3. For a power transistor, which of the following relations is true?
a) Ie>Ic>Ib
b) Ib>Ic>Ie
c) Ic>Ie>Ib
d) Ie=Ib
View Answer
Answer: a
Explanation: Practically speaking Ie = Ib+Ic. Ie is the highest as it
is the sum of the collector and base currents. The base current is
the smallest.
***4. High frequency operation of any device is limited by the
a) forward voltage rating
b) switching losses
c) thermal conductivity
d) heat Sink arrangements
View Answer
Answer: b
Explanation: Lower the switching losses higher the frequency of
operation of the device.
5. The instantaneous power loss during the delay time of a transistor
is given by
a) Ic Vce
b) Ib Vbe
c) Ic Vbe
d) Ib Vce
View Answer
Answer: a
Explanation: During the delay time only the collector current flows
& base to emitter voltage is zero.
6. For a power transistor, the average power loss during the delay
time can be given by the equation
a) Ic * Vc
b) 1/T * ∫Td (Ic Vce) dt (USING FORMULA OF AVG)
c) Ic * dVc/dt * T
d) 1/T * ∫(Td *Tr) (Ic Vc) dt
View Answer
Answer: b
Explanation: During the delay time only, the collector current flows &
base to emitter voltage is zero. Hence the average power can be
found, simply by integrating it over the total delay time & dividing by
the base time period.
7. A 1mv of i/p gives an output of 1V, the voltage gain as such would
be
a) 0.001
b) 0.0001
c) 1000
d) 100
View Answer
Answer: c
Explanation: 1V/1mv = 1000. Volage Gain=op/ip
8. Which of the following relations is true for a BJT?
a) Ic ≈ Ie (since Ic=Ib+Ie, but Ib is very small)
b) Ib ≈ Ic
c) Ie ≈ Ib
d) Ib ≈ Ie ≈ Ic
View Answer
Answer: a
Explanation: The collector & emitter current differ only by the base
current, which is very very small.
9. Choose the correct statement
a) A transistor will remain on as long the the base current is applied
b) A transistor remains on after a high to low pulse is applied at the
base
c) A transistor will remain on as long the the collector current is
applied
d) A transistor remains on after a high to low pulse is applied at the
collector
View Answer
Answer: a
Explanation: Unlike the thyristor devices, all the transistor family
devices remain in the conducting state as long as the firing pulses
are applied. This is a very important property of the transistor
devices.
10. Let’s say that a transistor is operating at the middle of the load
line, then a decrease in the current gain would
a) move the Q point up
b) move the Q point down
c) result in to & fro motion of the Q point
d) not change the Q point
View Answer
Answer: b
Explanation: The current gain would decreases the collector
current, shifting the Q point below.
POWER MOSFET 1
1. The MOSFET combines the areas of _______ & _________
a) field effect & MOS technology
b) semiconductor & TTL
c) mos technology & CMOS technology
d) none of the mentioned
View Answer
Answer: a
Explanation: It is an enhancement of the FET devices (field effect)
using MOS technology.
2. Which of the following terminals does not belong to the MOSFET?
a) Drain
b) Gate
c) Base
d) Source
View Answer
Answer: c
Explanation: MOSFET is a three terminal device D, G & S.
3. Choose the correct statement
a) MOSFET is a uncontrolled device
b) MOSFET is a voltage controlled device
c) MOSFET is a current controlled device
d) MOSFET is a temperature controlled device
View Answer
Answer: b
Explanation: It is a voltage controlled device. (Note - A BJT is
a current controlled device because its output characteristics are
determined by the input current. A FET is voltage controlled
device because its output characteristics are determined by the
Field which depends on Voltage applied.)
4. Choose the correct statement(s)
i) The gate circuit impedance of MOSFET is higher than that of a BJT
ii) The gate circuit impedance of MOSFET is lower than that of a BJT
iii) The MOSFET has higher switching losses than that of a BJT
iv) The MOSFET has lower switching losses than that of a BJT
a) Both i & ii
b) Both ii & iv
c) Both i & iv
d) Only ii
View Answer
Answer: c
Explanation: MOSFET requires gate signals with lower amplitude
as compared to BJTs & has lower switching losses.
5. Choose the correct statement
a) MOSFET is a unipolar, voltage controlled, two terminal device
b) MOSFET is a bipolar, current controlled, three terminal device
c) MOSFET is a unipolar, voltage controlled, three terminal device
d) MOSFET is a bipolar, current controlled, two terminal device
View Answer
Answer: c
Explanation: MOSFET is a three terminal device, Gate, source &
drain. It is voltage controlled unlike the BJT & only electron
current flows.
***6. The arrow on the symbol of MOSFET indicates
a) that it is a N-channel MOSFET
b) the direction of electrons
c) the direction of conventional current flow
d) that it is a P-channel MOSFET
View Answer
Answer: b
Explanation: The arrow is to indicate the direction of electrons
(opposite to the direction of conventional current flow).
7. The controlling parameter in MOSFET is
a) Vds
b) Ig
c) Vgs
d) Is
View Answer
Answer: b
Explanation: The gate to source voltage is the controlling
parameter in a MOSFET.
8. In the internal structure of a MOSFET, a parasitic BJT exists
between the
a) source & gate terminals
b) source & drain terminals
c) drain & gate terminals
d) there is no parasitic BJT in MOSFET
View Answer
Answer: b
Explanation: Examine the internal structure of a MOSFET, notice
the n-p-n structure between the drain & source. A p-channel
MOSFET will have a p-n-p structure.
9. In the transfer characteristics of a MOSFET, the threshold voltage
is the measure of the
a) minimum voltage to induce a n-channel/p-channel for
conduction
b) minimum voltage till which temperature is constant
c) minimum voltage to turn off the device
d) none of the above mentioned is true
View Answer
Answer: a
Explanation: It is the minimum voltage to induce a n-channel/p-
channel which will allow the device to conduct electrically through its
length.
10.The output characteristics of a MOSFET, is a plot of
a) Id as a function of Vgs with Vds as a parameter
b) Id as a function of Vds with Vgs as a parameter
c) Ig as a function of Vgs with Vds as a parameter
d) Ig as a function of Vds with Vgs as a parameter
View Answer
Answer: b
Explanation: It is Id vs Vds which are plotted for different values of
Vgs (gate to source voltage).
POWER MOSFET 2
1. In the output characteristics of a MOSFET with low values of Vds,
the value of the on-state resistance is
a) Vds/Ig
b) Vds/Id
c) 0
d) ∞
View Answer
Answer: b
Explanation: The o/p characteristics Is a plot of Id verses Vds, which
for low values of Vds is almost constant. Hence, the on-state
resistance is constant & the slop is its constant value.
2. At turn-on the initial delay or turn on delay is the time required
for the
a) input inductance to charge to the threshold value
b) input capacitance to charge to the threshold value
c) input inductance to discharge to the threshold value
d) input capacitance to discharge to the threshold value
View Answer
Answer: b
Explanation: It is the time required for the input capacitance to charge
to the threshold value, which depends on the device configuration.
The device can start conducting only after this time.
3. Choose the correct statement
a) MOSFET suffers from secondary breakdown problems
b) MOSFET has lower switching losses as compared to other
devices
c) MOSFET has high value of on-state resistance as compared to
other devices
d) All of the mentioned
View Answer
Answer: b
Explanation: MOSFET has lower switching losses due to its
unipolar nature & less turn off time. All of the other statements are
false.
4. Which among the following devices is the most suited for high
frequency applications?
a) BJT
b) IGBT
c) MOSFET
d) SCR
View Answer
Answer: c
Explanation: MOSFET has the least switching losses among the
rest of the devices.
5. Choose the correct statement
a) MOSFET has a positive temperature co-efficient
b) MOSFET has a high gate circuit impedance
c) MOSFET is a voltage controlled device
d) All of the mentioned
View Answer
Answer: d
Explanation: MOSFETs are voltage controlled devices. They have
high gate circuit impedance and are PTC devices.
6. Consider an ideal MOSFET. If Vgs = 0V, then Id = ? (DOUBT)
a) Zero
b) Maximum
c) Id(on)
d) Idd
View Answer
Answer: a
Explanation: Gate current = 0 so device is off (ideally).
7. For a MOSFET Vgs=3V, Idss=5A, and Id=2A. Find the pinch of
voltage Vp
a) 4.08
b) 8.16
c) 16.32
d) 0V
View Answer
Answer: b
Explanation: Use Id = Idd x [1-Vgs/Vp]2.
8. How does the MOSFET differ from the JFET?
a) JFET has a p-n junction (The factor that generates the key
difference between JFET and MOSFET is that a JFET operates
in only depletion mode. While MOSFET operates in both
depletion and enhancement mode)
b) They are both the same
c) JFET is small in size
d) MOSFET has a base terminal
View Answer
Answer: a
Explanation: None.
9. The basic advantage of the CMOS technology is that
a) It is easily available
b) It has small size
c) It has lower power consumption
d) It has better switching capabilities
View Answer
Answer: c
Explanation: Complementary MOS consumes very less power as
compared to all the earlier devices.
10. The N-channel MOSFET is considered better than the P-channel
MOSFET due to its
a) low noise levels
b) TTL compatibility
c) lower input impedance
d) faster operation
View Answer
Answer: d
Explanation: The N-channel are faster than the P-channel type.
IGBT 1
1. IGBT possess
a) low input impedance
b) high input impedance
c) high on-state resistance
d) second breakdown problems
View Answer
Answer: b
Explanation: Like MOSFET IGBT possess high input impedance.
2. IGBT & BJT both posses ___
a) low on-state power losses
b) high on-state power losses
c) low switching losses
d) high input impedance
View Answer
Answer: a
Explanation: Low on state power loss is one of the best parameters
of both BJT & the IGBT.
3. The three terminals of the IGBT are
a) base, emitter & collector
b) gate, source & drain
c) gate, emitter & collector
d) base, source & drain
View Answer
Answer: c
Explanation: IGBT is a three terminal device. It has a gate, a emitter
& a collector.
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4. In IGBT, the p+ layer connected to the collector terminal is called
as the
a) drift layer
b) injection layer
c) body layer
d) collector Layer
View Answer
Answer: b
Explanation: It is called as a injection layer, because it injects holes
into the n– layer.
5. The controlling parameter in IGBT is the
a) IG
b) VGE
c) IC
d) VCE
View Answer
Answer: b
Explanation: The controlling parameter is the gate to emitter
voltage, as the device is a voltage controlled device.
6. In IGBT, the n– layer above the p+ layer is called as the
a) drift layer
b) injection layer
c) body layer
d) collector Layer
View Answer
Answer: a
Explanation: It is called as the drift layer because its thickness
determines the voltage blocking capabilities of the device.
7. The voltage blocking capability of the IGBT is determined by the
a) injection layer
b) body layer
c) metal used for the contacts
d) drift layer
View Answer
Answer: d
Explanation: The drift layer which is a n– layer determines the voltage
blocking capabilities.
8. The controlled parameter in IGBT is the
a) IG
b) VGE
c) IC
d) VCE
View Answer
Answer: c
Explanation: The controlling parameter is the gate to collector
current.
***9. The structure of the IGBT is a
a) P-N-P structure connected by a MOS gate
b) N-N-P-P structure connected by a MOS gate
c) P-N-P-N structure connected by a MOS gate
d) N-P-N-P structure connected by a MOS gate
View Answer
Answer: c
Explanation: The IGBT is a semiconductor device with four
alternating layers (P-N-P-N) that are controlled by a metal-oxide-
semiconductor (MOS) gate structure without regenerative action.
10. The major drawback of the first generation IGBTs was that, they
had
a) latch-up problems
b) noise & secondary breakdown problems
c) sluggish operation
d) latch-up & secondary breakdown problems
View Answer
Answer: d
Explanation: The earlier IGBT’s had latch-up problems (device
cannot turn off even after the gate signal is removed), and
secondary breakdown problems (in which a localized hotspot in
the device goes into thermal runaway and burns the device out at
high currents).
IGBT 2
1. When latch-up occurs in an IGBT
a) Ig is no longer controllable
b) Ic is no longer controllable
c) the device turns off
d) Ic increases to a very high value
View Answer
Answer: b
Explanation: After latch-up the collector emitter current Ic is no
longer in control of the gate terminal.
2. A latched up IGBT can be turned off by
a) forced commutation of current
b) forced commutation of voltage
c) use of a snubber circuit
d) none of the mentioned
View Answer
Answer: a
Explanation: Forced commutation of current is the only way to
turn off a latched up IGBT.
3. The static V-I curve of an IGBT is plotted with
a) Vce as the parameter
b) Ic as the parameter
c) Vge as the parameter
d) Ig as the parameter
View Answer
Answer: c
Explanation: V-I curves are plotted for Ic vs Vce with the
controlling parameter (Vge) as a parameter.
4. Latch-up occurs in an IGBT when
a) Vce reaches a certain value
b) Ic reaches a certain value
c) Ig reaches a certain value
d) the device temperature reaches a certain value
View Answer
Answer: b
Explanation: Latch up occurs when the current through the device
(Ic) collector current increases beyond a certain value.
5. In an IGBT, during the turn-on time
a) Vge decreases
b) Ic decreases
c) Vce decreases
d) none of the mentioned
View Answer
Answer: c
Explanation: Vce decreases from 0.9 to 0.1 of the initial value
whereas others increase.
6. Choose the correct statement
a) IGBTs have higher switching losses as compared to BJTs
b) IGBTs have secondary breakdown problems
c) IGBTs have lower gate drive requirements
d) IGBTs are current controlled devices
View Answer
Answer: c
Explanation: Due to its high gate impedance, IGBTs require less
gate drive current.
7. The approximate equivalent circuit of an IGBT consists of
a) a BJT & a MOSFET
b) a MOSFET & a MCT
c) two BJTs
d) two MOSFETs
View Answer
Answer: a
Explanation: Gate of the MOSFET forms the gate terminal of the
IGBT, the source of MOSFET is connected to the base of the BJT and
drain to the collector.
8. An IGBT is also know as
a) MOIGT (Metal oxide insulated gate transistor)
b) COMFET (Conductively modulated FET)
c) GEMFET (Grain modulated FET)
d) all of the mentioned
View Answer
Answer: d
Explanation: All of the above mentioned are alternate names of
IGBTs.
9. The body of an IGBT consists of a
a) p-layer
b) n-layer
c) p-n layer
d) metal
View Answer
Answer: a
Explanation: IGBT has a p-n-p structure with fingers of n+ layers into
the p layer. The p layer has the largest cross section and forms the
body of the IGBT.
10. At present, the state-of-the-art semiconductor devices are begin
manufactured using
a) Semiconducting Diamond
b) Gallium-Arsenide
c) Germanium
d) Silicon-Carbide
View Answer
Answer: d
Explanation: All of the above mentioned can be used but Si-Ca has
certain advantages over the other materials.
SAFE OPERATING AREA
DEVICE SOA
transistor Ic versus Vce
mosfet Id versus Vds
igbt Ic versus Vce
1. For a transistor, the safe operating area (SOA) is a plot of
a) Ib versus Vce
b) Ib versus Ic
c) Ic versus Vce
d) Ic versus time
View Answer
Answer: c
Explanation: For reliable operation the collector current & voltage
must remain within the SOA curves.
2. The forward safe operating area (FSOA) pertains to the
operation when
a) the device is fired at a 50% Duty cycle
b) the device is forward-biased
c) the device is operated on AC
d) the device is operated on DC
View Answer
Answer: b
Explanation: The FSOA is for forward biased operations. The
FSOA is plotted for AC as well as DC for different duty cycles.
Hence, option (b) is the most appropriate choice.
3. The SOAs are plotted always on a _________ scale
a) time
b) frequency
c) logarithmic
d) polynomial
View Answer
Answer: c
Explanation: The scale is always logarithmic, irrespective of the type
of device.
4. As the FSOA increases, the pulse width
a) decreases
b) increases
c) remains constant
d) vanishes
View Answer
Answer: b
Explanation: On reduced pulse width values, the devices can
operated on higher voltages & currents.
5. The SOAs provided by the manufacturers are for
a) single pulse operation & a particular temperature
b) multi pulse operation & all the temperature
c) all the conditions
d) a particular duty cycle operation
View Answer
Answer: a
Explanation: The manufacturer specifies the SOAs only for single
pulse DC operation & a particular temperature (usually 20Degree
Centigrade Scale).For actual operations, The SOA’s have to be
modified using the thermal impedance charts.
6. A device is operating at Ic = 4A & Vce = 50V. For the device to
operate at Ic = 20A (Without damaging),
a) voltage should be increased
b) voltage should be reduced
c) voltage can be kept constant
d) current has to increased further
View Answer
Answer: b
Explanation: For safe operation, the values should be within the
limits. P = V.I – with increase in one of the values, another value
should decrease.
7. For a BJT, find the maximum power dissipation when the device is
safely operated at Vce = 90V and Ic = 0.5A
a) 40 Watts
b) 35 Watts
c) 45 Watts
d) 30 Watts
View Answer
Answer: c
Explanation: P=90*0.5=45Watts.
8. The SOA for a MOSFET is plotted for
a) Id versus Vds
b) Ig versus Id
c) Ig versus Vds
d) Id versus Vgs
View Answer
Answer: a
Explanation: It is a plot of drain current vs drain to source voltage.
9. The SOA for an IGBT is plotted for
a) Ic versus Vge
b) Ig versus Ic
c) Ig versus Vce
d) Ic versus Vce
View Answer
Answer: d
Explanation: It is a plot of collector current vs collector to emitter
voltage.
10. For MOSFET’s SOA, as the pulse width goes on increasing, the
maximum voltage rating ____ & current rating ____
a) is constant, increases
b) increases, decreases
c) decreases, is constant
d) constant, decreases
View Answer
Answer: c
Explanation: Refer MOSFET’s SOA.
THYRISTOR 1
This set of Power Electronics Multiple Choice Questions & Answers
(MCQs) focuses on “Thyristors-1”.

1. A thyristor (SCR) is a
a) P-N-P device
b) N-P-N device
c) P-N-P-N device
d) P-N device
View Answer
Answer: c
Explanation: An SCR (silicon controlled rectifier) is a four layer p-n-
p-n type device.
2. Which terminal does not belong to the SCR?
a) Anode
b) Gate
c) Base
d) Cathode
View Answer
Answer: c
Explanation: The SCR is having three terminals viz. anode, cathode
and the gate.
3. An SCR is a
a) four layer, four junction device
b) four layer, three junction device
c) four layer, two junction device
d) three layer, single junction device
View Answer
Answer: b
Explanation: SCR is a four layer p-n-p-n device which forms three p-
n junctions.
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4. Choose the false statement.
a) SCR is a bidirectional device
b) SCR is a controlled device
c) In SCR the gate is the controlling terminal
d) SCR are used for high-power applications
View Answer
Answer: a
Explanation: It is a unidirectional device, current only flows from
anode to cathode.
5. In the SCR structure the gate terminal is located
a) near the anode terminal
b) near the cathode terminal
c) in between the anode & cathode terminal
d) none of the mentioned
View Answer
Answer: b
Explanation: The gate is located near the cathode, because it allows
fast turning on of the device when the gate signal is applied by
forward basing the second junction.
6. The static V-I curve for the SCR is plotted for
a) Ia (anode current) vs Ig (gate current), Va (anode – cathode
voltage) as a parameter
b) Ia vs Va with Ig as a parameter
c) Va vs Ig with Ia as a parameter
d) Ig vs Vg with Ia as a parameter
View Answer
Answer: b
Explanation: The curve is plotted for Ia vs Va for different values of
gate current Ig.
7. If the cathode of an SCR is made positive with respect to the anode
& no gate current is applied then
a) all the junctions are reversed biased
b) all the junctions are forward biased
c) only the middle junction is forward biased
d) only the middle junction is reversed biased
View Answer
Answer: c
Explanation: The device is in the reverse blocking state (3rd quadrant)
& only the middle junction is forward biased whereas other two are
reversed biased.
8. For an SCR in the reverse blocking mode, (practically)
a) leakage current does not flow
b) leakage current flows from anode to cathode
c) leakage current flows from cathode to anode
d) leakage current flows from gate to anode
View Answer
Answer: c
Explanation: In the reverse blocking mode, the gate current is zero &
a reverse voltage is applied at the cathode-anode.
9. With the anode positive with respect to the cathode & the gate
circuit open, the SCR is said to be in the
a) reverse blocking mode
b) reverse conduction mode
c) forward blocking mode
d) forward conduction mode
View Answer
Answer: c
Explanation: The SCR is in the forward blocking mode with its top
and bottom junctions forward biased and the middle junction reversed
biased.
10. For an SCR in the forward blocking mode (practically)
a) leakage current does not flow
b) leakage current flows from anode to cathode
c) leakage current flows from cathode to anode
d) leakage current flows from gate to anode
View Answer
Answer: b
Explanation: In the forward blocking mode, the gate current is zero &
only the middle J2 junction is reversed biased.1
THYRISTOR 2
This set of Power Electronics Multiple Choice Questions & Answers
(MCQs) focuses on “Thyristors – 2”.

1. The forward break over voltage is the

a) anode-cathode voltage at which conduction starts with gate signal
applied
b) anode-cathode voltage at which conduction starts with no gate
signal applied
c) gate voltage at which conduction starts with no anode-cathode
voltage
d) gate voltage at which conduction starts with anode-cathode voltage
applied
View Answer
Answer: b
Explanation: It is the forward voltage at which the middle junction
breaks down without any gate signal and pushes the device into the
conducting state.
2. For a forward conducting SCR device, as the forward anode to
cathode voltage is increased
a) the device turns on at higher values of gate current
b) the device turns on at lower values of gate current
c) the forward impedance of the device goes on increasing
d) the forward impedance of the device goes on decreasing
View Answer
Answer: b
Explanation: Higher the value of anode-cathode forward voltage,
lower the gate requirements of the device. Also, the forward
resistance of the device is always constant as long as the junction
temperature is constant.
3. A thyristor can be bought from the forward conduction mode to
forward blocking mode by
a) the dv/dt triggering method
b) applying a negative gate signal
c) applying a positive gate signal
d) applying a reverse voltage across anode-cathode terminals
View Answer
Answer: d
Explanation: a) & c) are used to turn on the device, b) will damage the
SCR.
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4. Usually the forward voltage triggering method is not used to turn-
on the SCR because
a) it increases losses
b) it causes noise production
c) it may damage the junction & destroy the device
d) relatively it’s an inefficient method
View Answer
Answer: c
Explanation: In forward voltage triggering the middle junction breaks
down without any gate signal and pushes the device into the
conducting state. This method can permanently damage the J2
junction and make the device useless.
5. Among the following, the most suitable method to turn on the SCR
device is the
a) gate triggering method
b) dv/dt triggering method
c) forward voltage triggering method
d) temperature triggering method
View Answer
Answer: a
Explanation: d) & b) are unreliable methods, c) can permanently
damage the SCR
Gate triggering is simple, reliable & most efficient.
6. The forward break over voltage is maximum when
a) Gate current = ∞
b) Gate current = 0
c) Gate current = -∞
d) It is independent of gate current
View Answer
Answer: b
Explanation: Higher the value of anode-cathode forward voltage,
lower the gate requirements of the device.
7. For the SCR to remain in the ON (conducting) state
a) gate signal is continuously required
b) no continuous gate signal is required
c) no forward anode-cathode voltage is required
d) negative gate signal is continuously required
View Answer
Answer: b
Explanation: Unlike the transistor devices, once the SCR is turned on
by the gate terminal, the gate terminal losses its control over the
device.
8. The value of anode current required to maintain the conduction of
an SCR even though the gate signal is removed is called as the
a) holding current
b) latching current
c) switching current
d) peak anode current
View Answer
Answer: b
Explanation: It is the minimum anode current value required to
maintain the conduction of an SCR even though the gate signal is
removed. It is a very important parameter when employing an SCR in
any circuit.
9. In the reverse blocking mode the middle junction (J2) has the
characteristics of that of a
a) transistor
b) capacitor
c) inductor
d) none of the mentioned
View Answer
Answer: b
Explanation: It is like a capacitor, as the dv/dt voltage triggering turns
on the device. The charging current is given by,
IC = CjdVa/dt.
10. ________ are semiconductor thyristor devices which can be
turned-on by light of appropriate wavelengths.
a) LGTOs
b) LASERs
c) MASERs
d) LASCRs
View Answer
Answer: d
Explanation: LASCR stands for light activated SCRs, which can be
turned on in made to conduct by firing appropriate light pulses at its
gate region.
THYRISTOR 3
1. During the transition time or turn-on time
a) The forward anode voltage decreases from 90 % to 10 % & the
anode current also decreases from 90 to 10 % of the initial value
b) The forward anode voltage increases from 10 % to 90 % & the
anode current also increases from 10 % to 90 % of the initial value
c) The forward anode voltage decreases from 90 % to 10 % & the
anode current increases from 10 % to 90 % of the initial value
d) The forward anode voltage increases from 10 % to 90 % & the
anode current decreases from 90% to 10% of the initial value
View Answer
Answer: c
Explanation: During the turn on time, the voltage across the SCR is
going down and the current through it is slowly rising as it is going
into the conduction mode.
2. For an SCR the total turn-on time consists of
i) Delay time
ii) Rise time and
iii) Spread time
During the delay time the
a) anode current flows only near the gate
b) anode current rises from zero to very high value
c) losses are maximum
d) anode to cathode voltage is zero
View Answer
Answer: a
Explanation: Initially for a fraction of a microsecond (delay time)
after the gate signal is applied the anode current only flows near the
gate terminal where the gate current density is maximum, as the gate
current takes some time to spread all over the cross section of the
device.
3. The minimum value of anode current below which it must fall to
completely turn-off the device is called as the
a) holding current value
b) latching current value
c) switching current value
d) peak anode current value
View Answer
Answer: a
Explanation: The device will remain in the conducting state unless the
anode current falls below the holding current value.
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4. For an SCR the total turn-on time consists of
i) Delay time
ii) Rise time and
iii) Spread time
During the rise time the
a) anode current flows only near the gate
b) anode current rises from zero to very high value
c) losses are maximum
d) anode to cathode voltage is zero
View Answer
Answer: c
Explanation: The losses are maximum during the rise time because
both Ia & Va are high.
5. The latching current is _________ than the holding current
a) lower
b) higher
c) same as
d) negative of
View Answer
Answer: b
Explanation: The latching current is the value of current on which the
device will remain in the on state even after removal of the gate
signal. Whereas, the holding current is the threshold above which the
device will work.
6. For an SCR the total turn-on time consists of
i) Delay time
ii) Rise time and the
iii) Spread time
The spread time interval depends upon
a) the value of gate current
b) junction temperature
c) area of the cathode
d) area of the anode
View Answer
Answer: c
Explanation: During the spread time the conduction starts spreading
all over the SCR cathode cross-section structure, which depends upon
the structure of the gate & cathode. Higher the cathode area more is
the time required for the charges to spread all over.
7. For effective turning off of the SCR after the anode current has
reached zero value, ______________
a) chargers are injected by applying reverse anode-cathode voltage
b) chargers are removed by applying reverse anode-cathode voltage
c) chargers are injected by applying gate signal
d) chargers are removed by applying gate signal
View Answer
Answer: b
Explanation: To enable the device to regain its reverse blocking
capabilities, the stored charges in the junctions of the SCR must be
removed.
8. To avoid commutation failure
a) circuit turn-off time must be greater than the thyristor turn-off time
b) circuit turn-off time must be lesser than the thyristor turn-off time
c) circuit turn-off time must be equal to the thyristor turn-off time
d) none of the above mentioned
View Answer
Answer: a
Explanation: If the thyristor turn off time is more than the circuit turn
off time, the circuit will be turned off and the thyristor will keep
conducting, which is not at all desirable.
9. The gate characteristics of thyristor is a plot of
a) Vg on the X-axis & Ig on the Y-axis
b) Ig on the X-axis & Vg on the Y-axis
c) Va on the X-axis & Ig on the Y-axis
d) Ig on the X-axis & Va on the Y-axis
View Answer
Answer: b
Explanation: It is the gate current versus the gate voltage plot and
gives the minimum and maximum values of gate parameters.
10. The area under the curve of the gate characteristics of thyristor
gives the
a) total average gate current
b) total average gate voltage
c) total average gate impedance
d) total average gate power dissipation
View Answer
Answer: d
Explanation: As the gate characteristics is a plot of Ig vs Vg
consisting of two curves one for the maximum values & other for the
minimum the area between them gives the total average gate power
dissipation. (A very important parameter in designing of the
triggering circuits).
THYRISTOR 4
1. A tangent drawn from the Y-axis to the Pavg on the gate
characteristics gives the value of the
a) maximum value of gate-source resistance
b) minimum value of gate-source resistance
c) maximum value of gate-source power
d) minimum value of gate-source power
View Answer
Answer: b
Explanation: It gives the min gate to source resistance.
2. Higher the magnitude of the gate pulse
a) lesser is the time required to inject the charges
b) greater is the time required to inject the charges
c) greater is the value of anode current
d) lesser is the value of anode current
View Answer
Answer: a
Explanation: Lesser time is required to inject the charges & turn on
the device with higher gate pulse magnitude.
3.The average gate power dissipation for an SCR is 0.5 Watts the
voltage applied to the gate is Vg = 10 V. What is the maximum value
of current Ig for safe operation?
a) 0.25 A
b) 10 A
c) 0.05 A
d) 0.1 A
View Answer
Answer: c
Explanation: Vg.Ig = 0.5 W, the power dissipation mustn’t exceed the
average power dissipation.
4. For an SCR, the gate-cathode characteristic has a slop of 130. The
gate power dissipation is 0.5 watts. Find Ig
a) 0.62 A
b) 620 mA
c) 62 mA
d) 6.2 mA
View Answer
Answer: c
Explanation: Vg/Ig = 130 .. (given)
Vg.Ig = 0.5 watts .. (given)
use both the given data & find the gate current.
***5. The two transistor model of the SCR can obtained by
a) bisecting the SCR vertically
b) bisecting the SCR horizontally
c) bisecting the SCRs top two & bottom two layers
d) bisecting the SCRs middle two layers
View Answer
Answer: d
Explanation: The two transistor model consists of p-n-p and n-p-n
transistors, of which the middle n-p layer is common in both the
transistors.
6. Latching current for an SCR is 100 mA, DC source of 200 V is also
connected from the SCR to the L load. Compute the minimum width
of the gate pulse required to turn on the device. Take L = 0.2 H.
a) 50 μsec
b) 100 μsec
c) 150 μsec
d) 200 μsec
View Answer
Answer: b
Explanation: For L load, E = L di/dt
I = E/L t
Therefore, 0.100 = 200t/0.2
T = 100 μsec.
7. The gate-source voltage is Es = 16 V and the load line has a slope
of 128 V/A. Calculate the gate current for an average gate power
dissipation of 0.5 W.

a) 62.5 mA
b) 100.25 mA
c) 56.4 mA
d) 80.65 mA
View Answer
Answer: a
Explanation: Load line is nothing but Rs
Es = 16V
Vg.Ig = 0.5 also Vg/Ig=128
Rs = 128
We have Es = Ig x Rs + Vg.
8. From the two transistor (T1 & T2) analogy of SCR, the total anode
current of SCR is ___________ in the equivalent circuit.
a) the sum of both the base currents
b) the sum of both the collector current
c) the sum of base current of T1 & collector current of T2
d) the sum of base current of T2 & collector current of T1
View Answer
Answer: b
Explanation: The sum of both the collector currents of T1 and T2
forms the total anode current of SCR. Refer the model.
9. Consider the two transistor analogy of SCR, if α1 & if α2 are the
common-base current gains of both the transistors then to turn-on the
device
a) α1 + α2 should approach zero
b) α1 x α2 should approach unity
c) α1 – α2 should approach zero
d) α1 + α2 should approach unity
View Answer
Answer: d
Explanation: To turn on the device sum of both the current gains
should approach unity value.
10. Latching current for an SCR is 100 mA, a dc source of 200 V is
also connected to the SCR which is supplying an R-L load. Compute
the minimum width of the gate pulse required to turn on the device.
Take L = 0.2 H & R = 20 ohm both in series.
a) 62.7 μsec
b) 100.5 μsec
c) 56.9 μsec
d) 81 μsec
View Answer
Answer: b
Explanation;
E = Ri + L di/dt
Solve the above D.E for I & substitute the above values.
t = 100.503 μsec.
THYRISTOR RATING
This set of Power Electronics Multiple Choice Questions & Answers
(MCQs) focuses on “Thyristor Ratings”.

1. The voltage safety factor (VSF) for an SCR is the ratio of

a) peak working voltage & peak reverse repetitive voltage
b) dv/dt & di/dt
c) peak repetitive reverse voltage & maximum value of input voltage
d) peak repetitive reverse voltage & rms value of input voltage
View Answer
Answer: c
Explanation: It is peak repetitive reverse voltage/ the maximum value
of input voltage(Vm).
2. The forward dv/dt rating of an SCR
a) increases with increase in the junction temperature
b) decreases with increase in the junction temperature
c) increases with decrease in the rms value of forward anode-cathode
voltage
d) decreases with decrease in the rms value of forward anode-cathode
voltage
View Answer
Answer: a
Explanation: If the temperature is high, lesser dv/dt is required to turn
on the device as the higher temperature has already excited few of the
holes & electrons.
3. The finger voltage of an SCR is
a) minimum value of Vak to turn on the device with gate triggering
b) maximum value of Vak to turn on the device with gate triggering
c) minimum value of Vak to turn on the device without gate
triggering
d) maximum value of Vak to turn on the device without gate
triggering
View Answer
Answer: a
Explanation: Finger voltage is the minimum value of Vak (anode to
cathode voltage) to turn on the device with gate triggering, it is to be
avoided for accidental turn-on of the device.
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4. Which among the following anode current waveforms will have the
minimum junction temperature?
a) 100 % DC
b) 25 % DC
c) 50 % DC
d) AC
View Answer
Answer: b
Explanation: N % DC is nothing but a wave with n % duty cycle.
Lower the Duty cycle lesser is the current flowing & lesser is the
temperature dissipation.
5. An SCR has half cycle surge current rating of 3000 A for 50 Hz.
Calculate its one-cycle surge current rating
a) 3121.32 A
b) 2121.32 A
c) 3131.32 A
d) 2131.32 A
View Answer
Answer: b
Explanation: By equating the energies involved in one cycle &
subcycle
I2.T = Isb2.t
Isb = 3000 A
T = 1/50
t = T/2.
6. For a SCR the maximum rms on-state current is 35 A. If the SCR is
used in a resistive circuit for a rectangular wave with conduction
angle of 90°. Calculate the average & rms currents respectively.
a) I/4, I/2
b) I/2, I/√2
c) I/4, I2/2
d) I/4, I/√2
View Answer
Answer: a
Explanation: First convert the conduction angle into N for rectangular
wave.
N = 360°/Conduction angle = 4
Therefore, Iavg = I/4
Irms = I/√4 = I/2.
7. For an SCR the average & rms values of current are I/4 & I/2
respectively. Calculate the average on-state current rating (ITAV). Take
maximum RMS on-state current = 35 A.
a) 8.78 A
b) 10.10 A
c) 17.5 A
d) 24.74 A
View Answer
Answer: c
Explanation: Form factor = RMS/Average vaules of current
Therefore, FF = 2
ITAV = 35/2 = 17.5.
8. The amp2-sec rating of the SCR specifies
a) The power dissipated by the device when fault occurs
b) The energy dissipated by the device when fault occurs
c) The energy that the device can absorb before the fault is cleared
d) The energy that the device can absorb while operating in the
forward blocking mode.
View Answer
Answer: c
Explanation: The amp2-sec is the energy that the device can handle
before the fault is cleared. Its value decides how fast the fault has to
be cleared to avoid damage to the device.
9. The maximum rms current of an SCR is 50 A. For a 120° sine wave
conduction the form factor (FF) = 1.878
Find the average on-state current rating (ITAV).
a) 93.9 A
b) 174 A
c) 26.62 A
d) 68.52 A
View Answer
Answer: c
Explanation: ITAV = 50/FF.
10. The thermal resistance between junction & the SCR (θjc) has the
unit
a) Ω/°C
b) W/Ω
c) °C/W
d) ΩW/°C
View Answer
Answer: c
Explanation: Thermal resistance always has the unit degree
temperature per watt.

THYRISTOR PROTECTION
This set of Power Electronics Multiple Choice Questions & Answers
(MCQs) focuses on “Thyristor Protection”.

1. di/dt protection is provided to the thryistor by

a) connecting an inductor in parallel across the load
b) connecting an inductor in series with the load
c) connecting an inductor in parallel across the gate terminal
d) connecting an inductor in series with the gate
View Answer
Answer: b
Explanation: By placing the di/dt inductor (L) in series with the load,
the change in the anode current can be limited to a small value.
2. The local hot spot formation in the cross-section of the SCR is
avoided by
a) reducing the junction temperature
b) applying gate current nearer to the maximum gate current
c) using only R loads
d) proper mounting of the SCR on heat sink
View Answer
Answer: b
Explanation: Applying the higher gate current spreads the ions
quickly and avoids hotspot formation.
3. The dv/dt protection is provided in order to
a) limit the power loss
b) reduce the junction temperature
c) avoid accidental turn-on of the device
d) avoiding sudden large voltage across the load
View Answer
Answer: c
Explanation: Accidentally some voltage spike or noise may occur in
the vicinity of the device, if the magnitude is large enough it may turn
on the SCR.
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4. dv/dt protection is provided to the SCR by
a) connecting a capacitor in parallel with the load
b) connecting an inductor in series with the load
c) connecting a capacitor & resister in parallel with the device
d) connecting an inductor & resister in parallel with the device
View Answer
Answer: c
Explanation: Snubber circuit R-C in parallel with SCR is connected
for dv/dt protection.
****5. Figure below shows SCR having dv/dt and di/dt protection,
when the switch(shown in green) is closed the current through Rl =
a) I(1 – e-t/τ)
b) I(1 + e-t/τ)
c) I(1 – et/τ)
d) I(1 + e-t/τ)
View Answer
Answer: a
Explanation: As soon as the switch is closed, C acts like a S.C & the
voltage equation gives
Vs = (Rs + Rl) I + L di/dt
Solve the above D.E.
6. The effect of over-voltages on SCR are minimized by using
a) RL circuits
b) Circuit breakers
c) Varistors
d) di/dt inductor
View Answer
Answer: c
Explanation: Varistors are non-linear voltage clamping devices, RC
circuits across the loads can also be used.
7. Over-current protection in SCRs is achieved through the use of
a) Varistors
b) Snubber Circuits
c) F.A.C.L.F & C.B.
d) Zener diodes
View Answer
Answer: c
Explanation: FACLF stands for Fast Acting Current Limiting Fuse.
8. False triggering of the SCRs by varying flux & noise is avoided by
using
a) F.A.C.L.F & C.B
b) Shielded cables & twisted gate leads
c) Snubber circuits
d) di/dt inductor in series with the gate terminal
View Answer
Answer: b
Explanation: Shielded cables provide isolation from outside noise.
***9. The thyristor has the following specifications (DUE)
Vs = 400 V
(di/dt)max = 25 A/μsec
Find the value of L

a) 8 μH
b) 80 μH
c) 16 μH
d) 160 μH
View Answer
Answer: c
Explanation: As soon as the switch is closed, C acts like a S.C & the
voltage equation gives,
Vs = (Rs + Rl) I + L di/dt
Solve the above D.E.
di/dt = Vs/L e-t/τ
di/dt is maximum at t = 0, substitute the above given values & find L
10. Thyristors are used in electronic crowbar protection circuits
because it possesses
a) high surge current capabilities
b) high amp 2-sec rating
c) less switching losses
d) voltage clamping properties
View Answer
Answer: a
Explanation: Crowbar protection circuits have high surge current
capabilities.
THYRISTOR CONNECTIONS
1. SCRs are connected in parallel to fulfill the ___________ demand
a) high voltage
b) high current
c) size
d) efficiency
View Answer
Answer: b
Explanation: Number of devices connected in parallel can carry huge
amounts of current.
2. The term used to measure the degree of utilization of SCRs
connected in series & parallel is
a) tuf
b) string efficiency
c) voltage/current utilization ratio
d) rectification efficiency
View Answer
Answer: b
Explanation: String Efficiency = Rating of the whole string/(rating of
one SCR x number of SCRs)
3. To have maximum possible string efficiency
a) SCRs of same rating must be used
b) SCRs with similar V-I characteristics must be used
c) SCRs with the same dimensions must be used
d) SCRs with similar thermal characteristics must be used
View Answer
Answer: b
Explanation: Having similar ratings does not mean they have similar
charc.
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4. For a string voltage of 3300 V, let there be six series connected
SCRs each of voltage 600V. Then the string efficiency is
a) 99.36 %
b) 91.7 %
c) 98.54 %
d) 96 %
View Answer
Answer: c
Explanation: String efficiency = 3300/(6 x 600) = 98.54.
5. The measure of reliability of string is given by the factor
a) DRF = 1 – String efficiency
b) DRF = 1 + String efficiency
c) DRF = String efficiency – 1
d) DRF = String efficiency x 2
View Answer
Answer: a
Explanation: DRF is de-rating factor given by the above expression.
6. When an extra SCR is connected in series with a string
a) DRF decreases
b) DRF increases
c) DRF remains constant
d) None of the mentioned
View Answer
Answer: b
Explanation:
DRF = 1 – String efficiency
String Efficiency = Rating of the whole string/(rating of one SCR x
number of SCRs)
Extra SCR will reduce the string efficiency which in turn increase the
DRF.
7. The most practical way of obtaining a uniform distribution of series
connected SCRs is to
a) connect a resistor of value R in series with each of the series
connected SCRs
b) connect a resistor of value R in parallel with each of the series
connected SCRs
c) connect a resistor of value R in series with one of the series
connected SCRs
d) connect a resistor of value R in parallel with one of the series
connected SCRs
View Answer
Answer: b
Explanation: For uniform distribution of voltage across series
connected SCRs, a resistor of value R in parallel with each series
connected SCR.
8. 3 SCRs are connected in series. The string efficiency is 91%. SCRs
1, 2 & 3 have leakage currents 4 mA, 8 mA & 12 mA. Which SCR
will block more voltage?
a) SCR-1
b) SCR-2
c) SCR-3
d) All the three will block equal voltage
View Answer
Answer: a
Explanation: The SCR with lower leakage current block more
voltage.
9. Two parallel connect SCRs have same voltage drop (Vt) having
rated current = 2I1. SCR-1 carries a current of I1=2.6 A whereas SCR-
2 carries a current of I2=1.4 A. Find the string efficiency.
a) 45 %
b) 77 %
c) 92 %
d) 84 %
View Answer
Answer: b
Explanation: The total current would be I1+I2 & rated current is 2I1
String efficiency = (I1+I2)/2I1.
10. SCRs with a rating of 1000 V & 200 A are available to be used in
a string to handle 6 KV & 1 KV. Calculate the number of series &
parallel units required in case the de-rating factor is 0.1. (Round off
the fraction to the greatest & nearest integer)
a) Series = 7, Parallel = 6
b) Series = 6, Parallel = 7
c) Series = 6, Parallel = 6
d) Series = 7, Parallel = 7
View Answer
Answer: a
Explanation: DRF = 1-S.E
Therefore
0.1 = (1-6000/1000Ns) = (1-1000/200Np)
Ns = 6.6 = 7(say)
Np = 5.5 = 6(say)
OTHER THYRISTOR
1. _________ device from the thyristor family has its gate terminal
connected to the n-type material near the anode.
a) SCR
b) RCT
c) PUT
d) SUT
View Answer
Answer: c
Explanation: PUT is Programmable Unijunction Transistor which
is a p-n-p-n device just like the SCR with its gate connected to the n-
type material.
2. The Programmable Unijunction Transistor (PUT) turns on & starts
conducting when the
a) gate voltage exceeds anode voltage by a certain value
b) anode voltage exceeds gate voltage by a certain value
c) gate voltage equals the anode voltage
d) gate is given negative pulse w.r.t to cathode
View Answer
Answer: b
Explanation: The device only starts to conduct when the forward
anode to cathode voltage exceeds the applied gate to cathode voltage.
3. The equivalent circuit of SUS (Silicon Unilateral Switch) consists
of
a) a diode in series with a PUT
b) a diode in parallel with a PUT
c) a diode in anti-parallel with a PUT
d) two diodes
View Answer
Answer: c
Explanation: It is a diode connected in anti-parallel with a PUT.
4. From the following list of devices, choose the device that only
turns-on for a fixed-value of anode-cathode voltage
a) PUT
b) SCR
c) SUS
d) BJT
View Answer
Answer: c
Explanation: Unlike the other devices the SUS only turns-on for a
fixed value of anode to cathode voltage.
5. The SCS (Silicon Controlled Switch) is a
a) two terminal device
b) three terminal device
c) four terminal device
d) five terminal device
View Answer
Answer: c
Explanation: The SCS is a four terminal device A,K,KG & AG.
6. The SCS is a four layer, four terminal thyristor. Can be turned on
by
a) the anode gate
b) the cathode gate
c) either of the gates
d) gating both the gates together
View Answer
Answer: c
Explanation: The SCS has two gates, anode-gate and cathode-gate.
Either of the gates could be used to turn on the device.
7. The SCS (Silicon Controlled Switch) can be turned on by two
methods, by applying __________ and __________
a) positive pulse to the anode gate, positive pulse to the cathode gate
b) positive pulse to the anode gate, negative pulse to the cathode gate
c) negative pulse to the anode gate, positive pulse to the cathode
gate
d) negative pulse to the anode gate, negative pulse to the cathode gate
View Answer
Answer: c
Explanation: Either of the gates could be used to turn on the device.
8. Which of the following devices provide complete isolation between
triggering circuit and power circuit?
a) PUT
b) LASCR
c) SUS
d) DIAC
View Answer
Answer: b
Explanation: Complete Isolation between triggering circuit & power
circuit is the major advantage of using LASCR as they are light
activated or light trigged.
9. The DIAC can be represented by
a) two SCRs in anti-parallel
b) two SCRs in parallel
c) two diodes in anti-parallel
d) two diodes in parallel
View Answer
Answer: c
Explanation: The DIAC is nothing but a bi-directional diode.
10. The TRIAC can be represented by
a) two SCRs in anti-parallel
b) two SCRs in parallel
c) two diodes in anti-parallel
d) two diodes in parallel
View Answer
Answer: a
Explanation: The TRIAC is a bidirectional SCR.

OTHER THYRISTOR 2

1. The SITH (Static Induction Thyristor) is a

a) 4 terminal, self-controlled device
b) 3 terminal, self-controlled device
c) 4 terminal, un-controllable device
d) 3 terminal, un-controllable device
View Answer
Answer: b
Explanation: It is just like a GTO but it is p-n-n device.
2. The SITH has
a) gate, anode, cathode
b) base, collector, emitter
c) base, anode, cathode
d) gate, emitter, collector
View Answer
Answer: a
Explanation: The SITH has 3 terminals viz. gate, anode and cathode.
3. The SITH is a
a) p+ n+ diode with p+ electrodes
b) n+ p+ n– diode with p+ electrodes
c) p+ n n+ diode with p+ electrodes
d) p n+ p+ n with p+ electrodes
View Answer
Answer: c
Explanation: The Static Induction Thyristor is a p+ n+ diode with
p+ electrodes.
4. The SITH is a
a) normally-off device
b) normally-on device
c) uncontrollable device
d) none of the mentioned
View Answer
Answer: b
Explanation: The SITH unlike other devices is a normally on-
device which can be switched off as and when required.
5. The SITH will act as a diode when the
a) anode is forward biased with zero gate-cathode voltage
b) anode is reversed biased with zero gate-cathode voltage
c) anode is forward biased and a positive gate voltage is applied
d) anode is forward biased and a negative gate voltage is applied
View Answer
Answer: a
Explanation: Load current flows from anode to cathode as the
p+ junction is forward biased.
6. In SITH, the magnitude of the anode current can be controlled by
a) controlling the anode-cathode voltage
b) controlling the negative gate bias
c) controlling the positive gate bias
d) it cannot be controlled
View Answer
Answer: b
Explanation: Controlling the negative gate bias controls the main
anode current.
7. The SITH
a) has high reverse blocking capabilities as compared to CTs
b) has low reverse blocking capabilities as compared to CTs
c) has no reverse blocking capabilities
d) none of the mentioned
View Answer
Answer: c
Explanation: It has no reverse blocking capabilities due to emitter-
shorting.
8. The TRIAC’s terminals are
a) gate, anode, cathode
b) MT1, MT2, gate
c) gate1, gate2, anode, cathode
d) MT1, MT2, gate1, gate2
View Answer
Answer: b
Explanation: TRAIC has MT1, MT2 and a gate.
9. The RCT (Reverse Conducting Thyristor) has
a) a diode in series with the SCR
b) a diode in anti-parallel with the SCR
c) two SCR’s in anti-parallel
d) none of the mentioned
View Answer
Answer: b
Explanation: A diode in anti-parallel with the SCR is called as a RCT.
10. The TRIAC is most sensitive in the _________ quadrants
a) 1st & 3rd with positive gate current
b) 1st with positive gate current & 3rd with negative gate current
c) 3st with positive gate current & 1rd with negative gate current
d) 1st & 3rd with negative gate current
View Answer
Answer: b
Explanation: It is the most sensitive when all the voltage,current
and gate signal have the same polarities.
GTOs
. The GTO (gate turn-off thyristor) is a
a) p-n-p-n device
b) p-n-p device
c) p-metal-n device
d) p-n single junction device
View Answer
Answer: a
Explanation: Just like a SCR, the GTO is a four layer p-n-p-n
device.
2. The GTO can be turned off
a) by a positive gate pulse
b) by a negative gate pulse
c) by a negative anode-cathode voltage
d) by removing the gate pulse
View Answer
Answer: b
Explanation: The GTO can be turned off by applying a negative
gate pulse to the gate terminal.
3. The anode current is ideally limited by the
a) gate pulse amplitude
b) internal impedance of the device
c) load Impedance
d) gate circuit impedance
View Answer
Answer: c
Explanation: The SCR or any device is connected through the
load, hence the magnitude of the anode current (same as load
current) will depend on the supply voltage and load impedance.
4. In a GTO the n+ layer forms the
a) anode & gate
b) cathode & gate
c) cathode
d) gate
View Answer
Answer: c
Explanation: The bottom n+ layer forms the cathode.
5. The turn-off gain βoff of the GTO is given by
a) Ig/Ia
b) Ia/Ig
c) Vg/Va
d) Vg/Va
View Answer
Answer: b
Explanation: βoff = (anode current/gate current).
6. A GTO can be represented by two transistors T1 & T2. The current
gain of both transistors are α1 and α2 respectively. A low value of
gate current requires
a) low value of α1 and α2
b) low value of α1 and high value of α2
c) high value of α1 and low value of α2
d) high values of α1 and α2
View Answer
Answer: b
Explanation: In order that the gate current for turning-off the
device is low, α2 should be made as nearer to unity as possible
whereas α1 should be small.
7. Gold doped GTOs have _____________ as compared to the
conventional GTOs
a) high turn-off time
b) low negative gate current requirement
c) low reverse voltage blocking capabilities
d) lower positive gate current requirement
View Answer
Answer: b
Explanation: Gold doping reduces the negative gate current
requirements, different kinds of dopings have different advantages
over the others.
8. Latching current for the GTOs is ________ as compared to CTs
(Conventional thyristors).
a) more
b) less
c) constant
d) cannot be said
View Answer
Answer: a
Explanation: Latching current of GTOs is 2-4A as compared to
200 to 400 mA in case of CT’s.
9. In case of the two-transistor model (T1 & T2) of GTO with anode-
short, the anode-short is placed between the
a) emitter of T1 & T2
b) emitter of T1 & base of T2
c) emitter of T1 & base of T1
d) emitter of T1 & collector of T2
View Answer
Answer: c
Explanation: Draw the model. The anode-short resistor is connected
between emitter (Anode A of GTO) with base of T1 transistor.
10. Choose the correct statement:
GTOs have _________ as compared to the CTs.
a) less on-state voltage drop
b) less gate drive losses
c) higher reverse blocking capabilities
d) faster switching speed
View Answer
Answer: d
Explanation: GTOs have less turn-on and turn-off time, making it
efficient for high freque)ncy applications.
FIRING CIRCUITS OF SCR (3 PARTS
1. In a single pulse semi-converter using two SCRs, the triggering
circuit must produce
a) two firing pulses in each half cycle
b) one firing pulse in each half cycle
c) three firing pulses in each cycle
d) one firing pulse in each cycle
View Answer
Answer: b
Explanation: A single phase semi-converter has only two SCRs &
two diodes. Hence, only two pulses are required in each cycle, one
in each half.
2. In a 3-phase full converter using six SCRs, gating circuit must
provide
a) one firing pulse every 30°
b) one firing pulse every 90°
c) one firing pulse every 60°
d) three firing pulses per cycle
View Answer
Answer: c
Explanation: 60° x 6(devices) = 360°.
3. In the complete firing circuit, the driver circuit consists of
a) pulse generator & power supply
b) gate leads & power supply
c) pulse amplifier & pulse transformer
d) pulse detector & pulse amplifier
View Answer
Answer: c
Explanation: The driver circuit consists of a pulse amplifier to
increase the magnitude of the gate pulse to a sufficient value. The
pulse transformer then provides pulses to individual SCRs.
4. Find the average gate power dissipation (Pgav) when the maximum
allowable gate power dissipation (Pgm) = 10 kW, with a duty cycle =
50 %.
a) 10 KW
b) 5 KW
c) 2.5 KW
d) 7 KW
View Answer
Answer: b
Explanation: (Pgm) = (Pgav)/Duty Cycle.
5. The magnitude of gate voltage and gate current for triggering an
SCR is
a) inversely proportional to the temperature
b) directly proportional to the temperature
c) inversely proportional to the anode current requirement
d) directly proportional to the anode current requirement
View Answer
Answer: a
Explanation: Higher the temperature lesser will be the gate current
required as the temperature must have already excited some of the
atoms.
6. Find the amplitude of the gate current pulse, when the gate-cathode
curve is given by the relation Vg = [(1+10) x Ig] The peak gate drive
power is 5 Watts.
a) 359mA
b) 659mA
c) 1.359 A
d) 1.659 A
View Answer
Answer: b
Explanation:
(1+10 Ig).Ig = 5 Watts
Ig = 0.59 A.
7. The gate-cathode curve for an SCR is given by the relation Vg =
(1+10)Ig. The gate voltage source is a rectangular pulse of peak value
15 V and current = 0.659 A. Find the source resistance.

a) 90.2 Ω
b) 11.24 Ω
c) 46.2 Ω
d) 39 Ω
View Answer
Answer: b
Explanation: Es = Rs.Ig + Vg
Vg = 1+10 Ig
Therefore Rs = (15-1)/0.659.
8. Find the triggering frequency when the average gate power
dissipation = 0.3 W and the peak gate drive power is 5 Watts. The
gate source has a pulse width of 20 μsec duration.
a) 3 kHz
b) 0.3 kHz
c) 30 kHz
d) 0.03 mHz
View Answer
Answer: a
Explanation: (Pgm) = (Pgav)/Duty Cycle
Duty Cycle = f x T = (Pgav)/(Pgm)
Duty Cycle = 0.3/5
T = 20 μsec.
0.3/5 = f x T
f = (0.3)/(5 x 20 x 10-6) = 3000 Hz.
9. The duty cycle can be written as
a) f x T
b) f/T
c) T/f
d) f
View Answer
Answer: a
Explanation: The duty cycle is defined as the ratio of pulse-on period
to periodic time of pulse.
The pulse on period is T, and the periodic time is 1/f.
It is to be noted that T = pulse width whereas f = (1/T1) = frequency
of firing or pulse repetition rate.
10. The major function of the pulse transformer is to
a) increase the voltage amplitude
b) reduce harmonics
c) isolate low & high power circuit
d) create periodic pulses
View Answer
Answer: c
Explanation: Isolation of the two circuit is done by the transformer, as
the transformer is a magnetically coupled device and any mishap at
the load side will not damage the other side of the circuitry.S