This document appears to be an exam for a basic electronics course covering topics like PN junctions, transistors, amplifiers, and rectifiers. It contains 3 sections with multiple choice questions, short answer questions, and longer answer questions. Section A has 15 multiple choice questions testing knowledge of topics such as diode and transistor operation, semiconductor properties, and electronics components. Section B asks to compare MOSFETs and BJT, draw an amplifier circuit, and explain load lines and breakdown mechanisms. Section C requires discussing transistor configurations, explaining a full wave rectifier circuit, describing transistor biasing, and covering runaway effects, varactor diodes, or BJT amplifiers.
This document appears to be an exam for a basic electronics course covering topics like PN junctions, transistors, amplifiers, and rectifiers. It contains 3 sections with multiple choice questions, short answer questions, and longer answer questions. Section A has 15 multiple choice questions testing knowledge of topics such as diode and transistor operation, semiconductor properties, and electronics components. Section B asks to compare MOSFETs and BJT, draw an amplifier circuit, and explain load lines and breakdown mechanisms. Section C requires discussing transistor configurations, explaining a full wave rectifier circuit, describing transistor biasing, and covering runaway effects, varactor diodes, or BJT amplifiers.
This document appears to be an exam for a basic electronics course covering topics like PN junctions, transistors, amplifiers, and rectifiers. It contains 3 sections with multiple choice questions, short answer questions, and longer answer questions. Section A has 15 multiple choice questions testing knowledge of topics such as diode and transistor operation, semiconductor properties, and electronics components. Section B asks to compare MOSFETs and BJT, draw an amplifier circuit, and explain load lines and breakdown mechanisms. Section C requires discussing transistor configurations, explaining a full wave rectifier circuit, describing transistor biasing, and covering runaway effects, varactor diodes, or BJT amplifiers.
This document appears to be an exam for a basic electronics course covering topics like PN junctions, transistors, amplifiers, and rectifiers. It contains 3 sections with multiple choice questions, short answer questions, and longer answer questions. Section A has 15 multiple choice questions testing knowledge of topics such as diode and transistor operation, semiconductor properties, and electronics components. Section B asks to compare MOSFETs and BJT, draw an amplifier circuit, and explain load lines and breakdown mechanisms. Section C requires discussing transistor configurations, explaining a full wave rectifier circuit, describing transistor biasing, and covering runaway effects, varactor diodes, or BJT amplifiers.
BASIC ELECTRONICS 2nd Exam/ECE/CSE/IT/MECHATRONIC/0190/May’19 (FOR 2018 BATCH) Duration: 3Hrs. M.Marks:75 SECTION-A Q1. Do as directed. 15x1=15 a. Under normal operating voltages the reverse current in a silicon junction diode is in______ b. Ripple factor in full wave rectifier is______ c. CMOS means______ d. Write the relation between α and β. e. Biasing in transistor is done to stabilize the______ f. At absolute zero temperature an intrinsic semiconductor behaves like______ g. In saturation region both junctions of transistors are ______Biased. h. When a P-N junction is heavily doped its breakdown voltage will ______ i. Operation of JFET involves ______carriers. j. Boron has ______valence electrons. k. An ideal diode has ______forward resistance. l. The ideal value of stability factor is______ m. The communication path in an FET through which the carriers flow between drain and source is called______ n. A capacitor circuit does not allow passing ______component.
m o. The material used for the construction of LED is ______band gap.
o Q2. Attempt any five questions. i. Compare the MOSFET and BJT. r. cSECTION-B 5x6=30
p iii. Draw h- model of CE amplifier.e ii. Explain the behavior of P-N junction under different bias conditions. m a iv. Describe the importance of load line with suitable diagrams.
p c o v. Explain the terms avalanche and zener breakdown. r vi. Give advantages and applications of CMOS. r . b e vii. Derive the relation Ic = αIE + ICBO and explain different terms used in them. viii. Write a note on drift and diffusion currents. p a ix. What is a filter circuit? Explain the working of LC filter.
p Q3. Attempt any three questions. r SECTION-C
b a. Compare CB, CE and CC Configurations with at least five parameters. 3x10=30
b. With the help of diagram and waveforms, Explain working of Center tap full wave rectifier. c. Explain the divider method of biasing for transistor (CE). d. Write a short note on any two of the following: i. Thermal Runaway ii. Varactor diode (Symbol, operation, application) iii. BJT as an amplifier. e. Explain Construction, operation and characteristics of a MOSFET in depletion and enhancement modes.
