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Hannah Gail Valenzuela
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24 views6 pages

Reviewer

Uploaded by

Hannah Gail Valenzuela
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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WEEK 4

Di - Two
Ode - Electrodes
Semiconductor - p-n Junction Diode
- Two Terminal Device
Diode - Two Terminal Unidirectional Power Electronic Device
- first invention in a family of semiconductor electronics devices
P-N Junction Diode Under - Forward Bias - That P Side is connected to Positive Terminal.
P-N Junction Diode Under - Reverse Bias - positive terminal of the battery is connected to its
n-side
Semiconductor Diode Characteristics - Cure is a typical explanation for V-I.
Small Signal Diode -P-N Junctions Diode Operates on Low voltage Signal.
- Area is very small
- Low Charge storing capacity.
- Very Fast Recovery Time
- Low Voltage
Rectifier Diode
- whose P-N junction area is very large
- High Capacitance in reverse direction.
- Low Switching Speed
- Most common and most used type of a diode.
- heavy current and are used in converting AC into DC

Schottky Diode
- hot-carrier diode or Schottky barrier diode
- Named after a German physicist Walter H. Schottky.
- consists of a small junction between an N-
- very low forward voltage drop and fast switching.
- no capacitive junction (P-N junction)
- Schottky diode switching speed is very fast.

Super Barrier Diode


- rectifier diodes but they have a low forward voltage drop.
- low reverse leakage
- SBR uses MOSFET by making short contact
Light Emitting Diode (LED)
- a type of P-N junction diode that emits light
- direct-band semiconductor.
- cross the barrier and recombine with electron holes
- color of the light depends on the energy gap of the semiconductor.

Photodiode
- P-N junction diode that converts the light energy into electrical current.
- operation is opposite to that of an LED.
- semiconductor diode is affected by optical charge carriers
- packaged in a light blocking material.

Laser Diode
- converts electrical energy into light energy.
- Laser diode produces coherent light
Tunnel Diode
- was invented by Leo Esaki. (Also known as Esaki diode.)
- principle of the tunneling effect.
- Heavy doping concentration
- Different Application oscillator and a microwave amplifier.

Zener Diode
- Discovered by Clarence Malvin Zener.
- which not only allows the flow of current in the forward direction but also in
reverse direction.

Backward Diode
- operating voltages are much lower
- it operates as a Zener diode but the breakdown voltages are much lower.
- voltage signal (0.1 to 0.6v)
Avalanche Diode
- designed to operate in the avalanche breakdown region.
- wide junction makes it a better surge protector compare to a simple Zener
diode.

Transient Voltage Suppression (TVS) Diode


- avalanche diode that protects the circuit form high
voltage surges
- handling high voltages as compared to
avalanche diode.
Unidirectional TVS Diode
- operates similar to avalanche diode.
Bidirectional TVS Diode
- two avalanche diodes opposing each other in series
- manufactured as a single component
- surge protection when used in parallel with a circuit.
Gold Doped Diode
- Gold or platinum is used as the dopant
- fast switching speed but at the expense of increasing the forward voltage
drop.
- reverse leakage current is higher than a normal P-N

Step Recovery Diode


- the flow of current when its direction is reversed.
- very low doping concentration near the junction.
- SRD to switch from ON to OFF very fast.
Peltier Or Thermal Diode
- thermal resistance is different in one direction than the other direction.
- refrigerators for cooling effect.
Vacuum Diode
- simplest form of a diode made from a vacuum tube and
two electrodes
- heated directly or indirectly.
- anode collects these electrons and the current flows.
Varactor Diode
- also known as Vericap diode are voltage controlled capacitors.
- operates under reverse bias conditions.
- material is varied by changing the reverse voltage.
Gunn Diode
- Gunn diode AKA “Transferred Electron Device” (TED)
- negative resistance like tunnel diode.
- It is named after a British physicist J.B Gunn who discovered the
“Gunn Effect” in 1962
- AC or work like a normal diode
- oscillator for generating microwaves
of high frequency.
PIN Diode
- three-layer diode i.e. P-layer, I-layer & N-layer.
- ‘I‘ intrinsic semiconductor layer is placed between heavily
doped P and an N-type semiconductor.

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